FTD1465TR [FS]

40V 600mA 1MHz synchronous Buck Converter;
FTD1465TR
型号: FTD1465TR
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

40V 600mA 1MHz synchronous Buck Converter

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中文:  中文翻译
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SEMICONDUCTOR  
FTD1465  
TECHNICAL DATA  
40V 600mA 1MHz synchronous Buck Converter  
General Description  
Features  
FTD1465 is a 600mA synchronous buck converter with  
integrated 900mΩ power MOSFETs. The FTD1465 design  
with a current-mode control scheme, can convert wide input  
voltage of 4.5V to 40V to the output voltage adjustable from  
0.8V to 75%VIN to provide excellent output voltage  
regulaon.  
Wide Input Voltage from 4.5V to 40V  
600mA Output Current  
High Efficiency over 85% from Load Current 30mA  
to 100mA @ VOUT>=5V  
Low EMI Converter  
Adjustable Output Voltage from 0.8V to 75%VIN  
Integrated 900mΩ High/Low Side MOSFET  
1M Switching Frequency  
The FTD1465 equipped with Power-on-reset, sostart and  
whole protecons (under-voltage, over temperature and  
current-limit) into a single package.  
Stable with Low ESR Capacitors  
Power-On-Reset Detecon  
This device, available SOT-23-6 provides a very compact  
system soluon of external components and PCB area.  
Over-Temperature Protection  
Current-Limit Protecon  
Enable/Shutdown Funcon  
Available in SOT-23-6 packages  
Lead Free and Green Devices Available (RoHS  
compliant).  
Applications  
Smart Electronic equipments  
Pin Configurations  
Package Types  
BS1  
GND2  
FB3  
6SW  
5VIN  
4EN  
SOT23-6  
(Top view)  
2014. 01. 04  
Revision No : 0  
1/9  
FTD1465  
PinDescription  
Pin Number Pin Name Description  
High-Side Gate Drive Boost Input. BS supplies the voltage to drive the high-side N-channel  
MOSFET. At least 10nF capacitor should be connected from SW to BS to supply the high side  
switch.  
1
2
3
BS  
GDN  
FB  
Signal and power ground.  
Output feedback Input. The F TD1465 senses the feedback voltage via FB and regulates the  
voltage at 0.8V. Connecng FB with a resistor-divider from the converter’s output sets the  
output voltage from 0.8V to 75%VIN.  
Enable Input. EN is a digital input that turns the regulator on or o. EN threshold is 1.4V with  
0.2V hysteresis. Pull up with 1MΩ resistor for automac startup.  
Power Input. VIN supplies the power (4.5V to 40V) to the control circuitry, gate drivers and  
step-down converter switches. Connecng a ceramic bypass capacitor and a suitably large  
capacitor between VIN and GND eliminates switching noise and voltage ripple on the input to  
the IC.  
4
5
6
EN  
VIN  
SW  
Power Switching Output. It is the Drain of the N-Channel power MOSFET to supply power to  
the output LC lter.  
Ordering Information  
FTD1465  
Circuit Type  
Packing:  
BlankTube  
R: Tape and Reel  
Package  
TSOT23-6  
2014. 01. 04  
Revision No : 0  
2/9  
FTD1465  
Function Block  
Figure1 Function Block Diagram of FTD1465  
2014. 01. 04  
Revision No : 0  
3/9  
FTD1465  
Absolute Maximum Ratings (Note1)  
Symbol  
VIN  
Parameter  
VIN Supply VoltageVIN to Gnd)  
SW to GND Voltage Pulse Width > 20ns  
Pulse Width < 20ns  
EN, FB to GND Voltage  
Rating  
Unit  
V
-0.3 ~ 45  
VSW  
V
-1 ~ 45  
V
-3 ~ 45  
-0.3 ~ 6  
V
V
BS to GND Voltage  
BS to SW Voltage  
VBS  
VBS-SW  
PD  
VSW - 0.3 ~ VSW +6  
-0.3 ~ 6  
V
Power Dissipaon  
Internally Limited  
150  
W
ºC  
ºC  
ºC  
Juncꢀon Temperature  
TJ  
Storage Temperature  
TSTG  
TSDR  
-65 ~ 150  
260  
Maximum Lead Soldering Temperature (10 Seconds)  
Note1: Stresses beyond those listed under "absolute maximum rangs" may cause permanent damage to the device. These are stress rangs only and funconal  
operaon of the device at these or any other condions beyond those indicated under "recommended operang condions" is not implied. Exposure to absolute  
maximum rang condions for extended periods may aect device reliability.  
Thermal Characteristics  
Symbol  
Parameter  
Juncꢀon-to-Ambient Resistance in free air (Note 2)  
TypicalValue  
Unit  
θJA  
250  
°C/W  
SOT-23-6  
Note 2: θJA is measured with the component mounted on a high eecve thermal conducvity test board in free air.  
Recommended Operation Conditions (Note3)  
Symbol  
Parameter  
Range  
Unit  
VIN  
VIN Supply Voltage  
4.5 ~ 40  
0.8V ~ 75%VIN  
0 ~ 600  
V
V
VOUT  
IOUT  
Converter Output Voltage  
Converter Output Current  
Connue  
mA  
VOUT/VIN Maximum Rao(Note 4)  
75  
12  
%
VOUT/VIN Minimum Rao(Note 5)  
%
oC  
TA  
Ambient Temperature  
-40 ~ 85  
2014. 01. 04  
Revision No : 0  
4/9  
FTD1465  
oC  
TJ  
Juncꢀon Temperature  
-40 ~ 125  
Note 3: Refer to the typical applicaon circuit  
Note 4: In applicaons where he VOUT/VIN rao exceeds the Maximum Rao and when output loading is sucient to make the converter enter PWM mode, the VOUT  
voltage will probably drop.  
Note 5: When operang below the VOUT/VIN Minimum Rao, the converter has the likelihood of entering PSM mode in spite of loading  
voltage is sll regulated well.  
is heavy. However, In PSM mode, the VOUT  
Electrical Characteristics  
Unless otherwise specied, these specicaons apply over VIN=12V, VEN=3V and TA = -40 to 85ºC. Typical values are at TA=25ºC  
FTD1465  
Symbol  
Test Conditions  
Unit  
Parameter  
Min  
Typ  
Max  
SUPPLY CURRENT  
IVIN  
VIN Supply Current  
VFB=1V, SW=NC  
VEN=0V  
-
-
0.85  
1
1.2  
10  
mA  
IVIN_SD  
VIN Shutdown Supply Current  
µA  
POWER -ON-RESET (POR)  
VIN POR Voltage Threshold  
VIN POR Hysteresis  
REFERENCE VOLTAGE  
3.7  
-
3.9  
0.6  
VIN Rising  
4.1  
-
V
V
-
-3  
-
0.8  
-
VREF  
Reference Voltage  
Output Voltage Accuracy  
FB input current  
-
V
%
TJ=25°C, IOUT=10mA  
+3  
50  
10  
IFB  
nA  
OSCILLATOR AND DUTY CYCLE  
FSW  
800  
-
1000  
60  
Switching Frequency  
1200  
80  
kHz  
ns  
Minimum on-me  
2014. 01. 04  
Revision No : 0  
5/9  
FTD1465  
Electrical Characteristics  
T A=+25ºC and VCC=15V, unless otherwise specied.  
FTD1465  
Typ  
Symbol  
Test Conditions  
Unit  
Parameter  
Min  
Max  
POWER MOS FET  
-
-
-
-
-
900  
900  
-
High Side MOSFET Resistance  
Low Side MOSFET Resistance  
-
-
mΩ  
mΩ  
µA  
µA  
ns  
High Side Switch Leakage Current VEN=0V, VIN=40V, VSW=0V  
Low Side Switch Leakage Current VEN=0V, VIN=40V, VSW=0V  
Dead-me  
2
2
-
-
10  
PROTECTIONS  
ILIM  
High Side MOSFET Current-Limit  
Under-Voltage Protecon (UVP)  
Over-Temperature Protecon  
Over-Temperature Hysteresis  
0.6  
40  
-
0.7  
50  
0.8  
60  
-
A
%VREF  
oC  
oC  
150  
30  
-
-
SOFT-START, ENABLE  
tSS  
SoStart Time  
-
1.2  
-
1
1.4  
0.2  
50  
2
-
1.6  
-
ms  
V
EN Rising Threshold Voltage  
EN Falling Threshold Hysteresis  
EN Turn on delay  
VIN=4.5V ~ 40V  
VIN=4.5V ~ 40V  
V
-
-
µS  
µA  
V
EN Input Current  
VEN=2V  
VEN=6V  
-
-
EN Clamp High  
4
-
5
6
EN Input Current  
-
10  
µA  
Note 6: Techcode guarantee the SW maximum duty cycle. The maximum percentage of converter output over input voltage depends on load current.  
2014. 1. 04  
Revision No : 0  
6/9  
FTD1465  
Typical Application Circuit  
Vin  
24V  
VIN  
BS  
L1  
22uH  
C3  
0.1uf  
C1  
4.7uf  
Vout  
12V  
SW  
C2  
10uf  
Note:this diode  
should be added  
when Vin>18V  
R1  
140kΩ  
R3  
1MΩ  
FB  
EN  
R2  
10kΩ  
GND  
2014. 01. 04  
Revision No : 0  
7/9  
FTD1465  
Application Information  
Main Control Loop  
Soft-Start  
The FTD1465is a constant frequency, synchronous recꢀfier  
and current-mode switching regulator. In normal operaon,  
the internal upper power MOSFET is turned on each cycle.  
The peak inductor current at which ICMP turn othe upper  
MOSFET is controlled by the voltage on the COMP node,  
which is the output of the error amplifier(EAMP). An  
external resisve divider connected between Vout and  
ground allows the EAMP to receive an output feedback  
voltage VFB at FB pin. When the load current increases, it  
causes a slightly decrease in VFB relave to the 0.8V  
reference, which in turn causes the COMP voltage to  
increase unl the average inductor current matches the new  
load current.  
The FTD1465provides built-in so-start funcꢀon to limit the  
inrush current. The so-start me is 1ms  
Bootstrap Capacitor  
The FTD1465is a N-channel MOSFET step down converter.  
The MOSFET requires a gate voltage that is higher than input  
voltage, thus a boost capacitor should be connected  
between SW and BST pins to drive the gate of the N-channel  
MOSFET. Typical boostrap capacitor value is from 10nF to  
100nF.  
Over-Current-Protection and Hiccup  
The FTD1465 has a cycle-by-cycle over-current limit when the  
inductor current peak value exceeds the set current limit  
threshold. Meanwhile, the output voltage drops unl FB is  
below the Under-Voltage (UV) threshold below the  
reference. Once UV is triggered, the FTD1465 enters hiccup  
mode to periodically restart the part. This protecon mode  
is especially useful when the output is dead-shorted to  
ground. The average short circuit current is greatly reduced  
to alleviate thermal issues and to protect the regulator. The  
FTD1465 exits the hiccup mode once the over-current  
condion is removed.  
VIN Power-On-Reset (POR)  
The FTD1465 keep monitoring the voltage on VIN pin to  
prevent wrong logic operaons which may occur when VIN  
voltage is not high enough for the internal control circuitry  
to operate. The VIN POR has a rising threshold of 3.9V  
(typical) with 0.6V of hysteresis.  
Aꢁer the VIN voltages exceed its respecve POR thresholds,  
the IC starts a start-up process and then ramps up the  
output voltage to the seng of output voltage. Connect a  
RC network from EN to GND to set a turn-on delay that can  
be used to sequence the output voltages of mulple  
devices.  
Over-Temperature Protection (OTP)  
The over-temperature circuit limits the juncon  
temperature of the FTD1465. When the juncon temperature  
exceeds 150ºC, a thermal sensor turns othe N-channel  
power MOSFET, allowing the device to cool down. The  
thermal sensor allows the converter to start a start-up  
process and regulate the output voltage again aer the  
juncon temperature cools by 30ºC. The OTP designed with  
a 30ºC hysteresis lowers the average TJ during connuous  
thermal overload condions, increasing life me of the  
FTD1465.  
Enable/Shutdown  
Driving EN to ground places the FTD1465 in shutdown. When  
in shutdown, the internal power MOSFETes turn o, all  
internal circuitry shuts down and the quiescent supply  
current of VlN reduces to <10µA, the EN under-  
voltage-lockout (UVLO) has a rising threshold of 1.4V(typical)  
with 0.2V of hysteresis.  
2014. 01. 04  
Revision No : 0  
8/9  
FTD1465  
Package Information  
SOT23-6 Package Outline Dimensions  
2014. 01. 04  
Revision No : 0  
9/9  

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