FTD2114KWLT1G [FS]
Epitaxial planar type NPN silicon transistor;
| 型号： | FTD2114KWLT1G |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Epitaxial planar type NPN silicon transistor |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTD2114K
TECHNICAL DATA
Epitaxial planar type
NPN silicon transistor
Features
1) High DC current gain.
3
hFE = 1200 (Typ.)
2) High emitter-base voltage.
2
VEBO =12V (Min.)
1
3) Low VCE(sat).
VCE (sat) = 0.18V (Typ.)
SOT– 23
(IC / IB = 500mA / 20mA)
4) We declare that the material of product compliance with RoHS requirements.
COLLECTOR
3
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VCBO
Limits
25
Unit
1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
BASE
VCEO
EBO
20
2
V
12
V
EMITTER
0.5
1
A(DC)
A(Pulse)
Collector current
I
C
Collector power
dissipation
PC
W
0.2
Junction temperature
Storage temperature
Single pulse Pw=100ms
Tj
150
C
C
Tstg
−55∼+150
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
25
20
12
−
I
I
I
C
=10µA
=1mA
−
−
V
C
−
−
V
E
=10µA
CB=20V
EB=10V
I
CBO
EBO
CE(sat)
−
0.5
0.5
0.4
µA
µA
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
V
−
0.18
I
C
/I
B
=500mA/20mA
−
DC current transfer ratio
h
FE
−
2700
V
CE=3V, I
C
=10mA
820
Transition frequency
Output capacitance
f
T
−
−
−
350
8.0
0.8
−
−
−
MHz
pF
V
CE=10V, I
CB=10V, I
=1mA, Vi=100mV(rms), f=1kHz
E
=−50mA, f=100MHz
Cob
Ron
V
E=0A, f=1MHz
Output On-resistance
pF
IB
Measured using pulse current
hFE Values Classification, Device Marking and Ordering Information
hFE
Device
Marking
BV
Shipping
FTD2114KVLT1G
820~1800
3000/Tape&Reel
FTD2114KVLT3G
FTD2114KWLT1G
FTD2114KWLT3G
820~1800
1200~2700
1200~2700
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
BV
BW
BW
2008. 02. 18
Revision No : 0
1/4
FTD2114K
Electrical characteristic curves
1000
800
600
400
2.0
1000
500
1.8mA 2 0mA
1 6mA
1.4mA
Ta=25 C
V =
CE
3V
Measured using
pulse current.
1.6µA
2.0µA
1 2mA
1.6
1.2
0.8
1.4µA
1.2µA
1.0µA
Ta=100°C
25°C
200
100
50
1.8µA
1 0mA
0 8mA
−25°C
0 6mA
0.4mA
0.8µA
0.6µA
20
10
5
0 2mA
0.4µA
0.2µA
0.4
0
200
0
Ta=25°C
Measured using
pulse current.
I
B=0mA
2
1
B
I =0
0
0.1
0 2
0 3
0.4
0 5
0
2
4
6
8
10
0
0 2 0.4 0.6
0.8 1 0 1 2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics
characteristics(Ι)
characteristics(ΙΙ)
2000
10000
5000
10000
5000
Ta 25°C
=
Measured using
pulse current.
Ta
=
25°C
V =3V
CE
Measured using
pulse current.
Measured using
pulse current.
1000
500
VCE=5V
2000
1000
500
2000
1000
500
200
Ta=100°C
25°C
−25°C
100
50
3V
1V
200
100
50
200
100
C B
I /I =100
50
25
20
50
10
5
10
20
10
20
10
2
1
2
5
10 20
50 100 200 5001000
1
2
5
10 20 50 100 200 5001000
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : I
(mA)
C
Fig.4 DC current gain vs. collector
Fig.5 DC current gain vs.
Fig.6 Collector-emitter saturation
current(Ι)
collector current(ΙΙ)
voltage vs. collector current(Ι)
2000
1000
500
10000
10000
5000
I
/I =25
C B
Measured using
pulse current.
l
C B
/l =10
Measured using
pulse current.
Ta
Pulsed
=
25°C
5000
I
C
/I
B
=10
Ta=−25°C
25°C
25
2000
1000
500
2000
1000
500
50
100°C
100
200
100
50
Ta=100°C
25°C
200
100
200
100
50
−25°C
20
10
5
50
20
10
20
10
2
1
2
5
10 20
50 100 200 5001000
1
2
5
10 20 50 100 200 5001000
1
2
5
10 20 50 100200 5001000
(mA)
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C(mA)
COLLECTOR CURRENT : I
C
Fig.7 Collector-emitter saturation
Fig.9 Base-emitter saturation voltage
Fig.8 Base-emitter saturation
voltage vs. collector current(Ι)
voltage vs. collector current(ΙΙ)
vs. collector current(ΙΙ)
2008. 2. 18
Revision No : 0
2/4
FTD2114K
100
50
1000
500
10000
5000
Ta=25°C
f=1kHz
Vi=100mV(rms)
R =1kΩ
L
Ta
=
=
25°C
10V
Ta
=25°C
CE
V
f=
1MHz
Measured using
pulse current.
E
I =0A
200
100
50
2000
1000
500
20
10
5
200
100
50
20
10
5
2
1
0.5
2
1
20
10
0.2
0.1
-1 -2
-5 -10 -20 -50 -100-200 -500-1000
0.1 0.2 0.5
1
2
5
10 20
50 100
CB(V)
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
E
(mA)
B
EMITTER CURRENT : I
COLLECTOR TO BASE VOLTAGE : V
BASE CURRENT : I (mA)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.12 Output-on resistance vs.
base current
Fig.11 Collector output capacitance
vs. collector-base voltage
Ron measurement circuit
L
R =1kΩ
Input
v
i
I
B
Output
v
V
1kHz
100mV(rms)
0
v
0
Ron=
×R
L
vi−v
0
2008. 2. 18
Revision No : 0
3/4
FTD2114K
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
P N 1. ANODE
2. NO CONNECTION
3. CATHODE
0.037
0.95
0.037
0 95
0.079
2.0
0.035
0.9
0 031
0.8
inches
mm
2008. 2. 18
Revision No : 0
4/4
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