MBUS1GS [FS]
Fast Recovery Diode Bridge Rectifier;
| 型号： | MBUS1GS |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Fast Recovery Diode Bridge Rectifier |
| 文件： | 总3页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MBUS1BS ~ MBUS1MS
TECHNICAL DATA
Fast Recovery Diode Bridge Rectifier
Features
■
●
●
Io
0.8A
VRRM
100V~1000V
●
50ns
trr
●
●
Glass passivated chip
High surge forward current capability
Applications
■
■
●
General purpose 1 phase Bridge
rectifier applications
Package outline dimensions in inches (millimeters)
Limiting Values（Absolute Maximum Rating）
MBUS1
Item
Symbol Unit
Conditions
BS DS GS JS KS MS
Repetitive Peak Reverse
Voltage
VRRM
V
A
A
100 200 400 600
800 1000
On alumina substrate
0.8
0.5
60Hz sine wave,
R-load, Ta=25℃
Average Rectified Output
Current
IO
On glass-epoxi substrate
Surge(Non-
repetitive)Forward Current
IFSM
60HZ sine wave, 1 cycle, Tj=25℃
30
A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode
I2t
Current Squared Time
3.7
Tstg
Tj
-55 ~+150
-55 ~+125
Storage Temperature
Junction Temperature
℃
℃
2013 10 22
Revision No : 0
1/3
MBUS1BS ~ MBUS1MS
■
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Max
GS
Item
Symbol Unit
Test Condition
BS
DS
JS KS MS
I
FM=0.4A, Pulse
Peak Forward Voltage
VFM
V
1.70
1.0
1.30
measurement, Rating of per
diode
VRM=VRRM , Pulse
measurement, Rating of per
diode
IRRM
10
Peak Reverse Current
μA
IF=0.5A IRM=1A
IRR=0.25A
Reverse Recovery Time
Trr
50
75
ns
Between junction and
ambient, On alumina
substrate
76
134
20
R
θJ-A
Between junction and
ambient, On glass-
epoxi substrate
Thermal Resistance
℃/W
Between junction and
lead
R
θJ-L
2013 10 22
Revision No : 0
2/3
MBUS1BS ~ MBUS1MS
■
Characteristics (Typical)
FIG2 Surge Forward Current Capadility
FIG1 Io-Ta Curve
1.2
1.0
0.8
0.6
0.4
0.2
①
1mm×1mm
35um
②
1mm×1mm
20um
35
30
25
20
15
10
5
sine wave
soldering land
conductor layer
substrate thickness
0
0.64mm
8.3ms 8.3ms
1cycle
on alumina substrate
②
non-repetitive
Tj=25℃
sine wave R-load
with heatsink
①
on glass-epoxi substrate
0
0
1
2
5
10
20
50
100
0
40
80
120
160
Ta(℃)
Number of Cycles
FIG 3: TYPICAL FORWARD CHARACTERISTICS
FIG4 Typical Reverse Characteristics
20
10
100
10
Tj=150℃
4.0
2 0
MBUS1BS-MBUS1DS
MBUS1GS
1.0
1.0
0.4
0 2
MBUS1JS-MBUS1MS
Tj=25℃
0.1
0.1
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.02
0.01
0.01
0
20
40
60
80
100
Voltage(%)
1.4
1.6
0.4
1.0
1.2
1 8
VF(V)
0 6
0.8
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2013 10 22
Revision No : 0
3/3
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