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FLD3F12JL

更新时间：2024-09-18 05:57:47
品牌：FUJITSU
描述：1,310nm MQW-DFB Return Path Laser

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FLD3F12JL 概述

1,310nm MQW-DFB Return Path Laser 1,310nm MQW - DFB回传通道激光 激光二极管

FLD3F12JL 规格参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.61最大正向电流：0.15 A
最大正向电压：1.5 V安装特点：THROUGH HOLE MOUNT
最高工作温度：85 °C最低工作温度：-25 °C
光电设备类型：LASER DIODE峰值波长：1310 nm
半导体材料：GaAs子类别：Laser Diodes
表面贴装：NOBase Number Matches：1

FLD3F12JL 数据手册

通过下载FLD3F12JL数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
FEATURES  
BENEFITS  
• Multiple Quantum Well (MQW) DFB Laser • 4 Channels video/data  
Loading  
• Wide operating temperature without TEC  
Characteristics  
• Low Distortion  
• Built-in optical isolator  
• 5dB Link Loss  
• Coaxial module with vertical flange  
APPLICATIONS  
This DFB laser module is intended for application in return  
(reverse) path analog video/data.  
DESCRIPTION  
The FLD3F12JL is a DFB laser diode for return path analog video/data applications. It has a 2.0 to  
4.0mW optical power range*. It is specified with 4 channels signal loading and has excellent CSO and  
CTB performance. It is packaged in a small coaxial coolerless type module with built-in isolator and  
monitor photodiode. This device has a wide operating temperature of -25 to +85°C without Thermo-  
Electric Cooler (TEC).  
ABSOLUTE MAXIMUM RATINGS (T =25°C)  
c
Parameter  
Symbol  
Ratings  
Unit  
Optical Output Power  
Pf  
8.0  
150  
2
mW  
mA  
V
max  
Forward Current (LD)  
If  
max  
Reverse Voltage (LD)  
Vr  
max  
Photodiode Reverse Voltage  
Photodiode Forward Current  
VDR  
20  
2
V
max  
max  
mA  
IDF  
T
Soldering Temperature  
(t<10sec., d>2.5mm)  
260  
°C  
solder  
Storage Temperature  
T
-40 to +90  
-25 to +85  
85  
°C  
°C  
%
stg  
Operating Case Temperature  
Storage Humidity (Note 1)  
T
X
op  
stg  
Operating Humidity (Note 1)  
X
85  
%
op  
Note 1: Storage or operating within 500 hours maximum.  
Edition 1.0  
December 1999  
1
1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
OPTICAL AND ELECTRICAL CHARACTERISTICS (T =-25 to +85°C, unless otherwise specified)  
c
Limits  
Typ.  
Parameter  
Fiber Output Power  
Threshold Current  
Forward Voltage  
Unit  
mW  
mA  
Symbol  
Test Conditions  
Min.  
Max.  
P
f
CW, I =I  
F op  
2.0  
-
4.0  
I
2
-
-
60  
1.5  
th  
CW  
V
F
CW, I =I  
F op  
1.2  
V
Slope Efficiency  
S
CW, I =I  
F op  
40  
-
250  
200  
1.4  
µW/mA  
µW/mA  
-
Slope Efficiency at Tc=25°C  
S
CW, I =I , Tc=25°C  
60  
120  
25  
F op  
Slope Efficiency Ratio  
Peak Wavelength  
RTS  
S(Tc)/S25  
0.5  
1,290  
30  
-
-
-
λ
1,330  
-
nm  
CW, I =I  
F op  
p
SSR  
CSO  
SideMode Suppression Ratio  
Composite Second Order  
CW, I =I  
F op  
dB  
Note (1)  
-
-
-55  
dBc  
Composite Triple Beat  
Relative Intensity Noise  
CTB  
RIN  
Note (1)  
Note (2)  
-
-
-
-
-60  
dBc  
-150  
dB/Hz  
Frequency Flatness  
Monitor Current  
-
Note (3)  
-0.5  
0.05  
-
-
-
+0.5  
2.0  
dB  
mA  
nA  
CW, I =Iop, VDR=5V  
F
Im  
ID  
VDR=5V  
Note (4)  
1
500  
Monitor Dark Current  
TE  
-1.0  
-
+1.0  
dB  
Tracking Error  
Note (1): I =I , OMI=7%/ch, 4ch(f=7.25MHz to 25.25MHz)  
op  
F
Note (2): CW, I =I , f=5MHz to 300MHz  
F
op  
Note (3): I =I , f=5MHz to 300MHz  
F
op  
Note (4): CW, Im-APC(I =I @Tc=+25°C), Tc=-25°C to +85°C  
F
op  
Edition 1.0  
December 1999  
2
1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
Fig. 1 Forward Current vs Output Power  
Fig. 2 Forward Voltage vs Forward Current  
Tc=+25°C  
80  
4
-25°C  
60  
3
+25°C  
40  
20  
2
Tc=+85°C  
1
0
0
0
20  
40  
60  
80  
100  
0
0.5  
1.0  
1.5  
2.0  
Forward Current, If (mA)  
Forward Voltage, Vf (V)  
Fig. 4 Temperature Dependence of Slope Efficiency  
Fig. 3 Temperature Dependence of Threshold Current  
100  
250  
200  
150  
100  
50  
10  
1
-20  
0
20  
40  
60  
80  
-20  
0
20  
40  
60  
80  
Case Temperature, Tc (°C)  
Case Temperature, Tc (°C)  
Edition 1.0  
December 1999  
3
1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
Fig. 5 Tracking Characteristics  
Im = constant (@Tc=25°C)  
2
-1  
0
-1  
-2  
-25  
0
25  
40  
60  
80 85  
Case Temperature, Tc (°C)  
Fig. 6 CSO vs. Output Power  
-50  
-55  
OMI = 7%/ch, 4ch  
Tc=+85°C  
+25°C  
-60  
-65  
-70  
-25°C  
2
3
4
Optical Output Power, Pf (mW)  
Fig. 7 CTB vs. Output Power  
-60  
-65  
OMI = 7%/ch, 4ch  
Tc=-25°C  
-70  
-75  
+85°C  
+25°C  
-80  
2
3
4
Optical Output Power, Pf (mW)  
Edition 1.0  
December 1999  
4
1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
Notes  
Edition 1.0  
December 1999  
5
1,310nm MQW-DFB  
Return Path Laser  
FLD3F12JL  
“JL” PACKAGE  
UNIT: mm  
lead rotation 10°  
4-C1  
0.3  
2
3
4-Ø0.45 0.1  
4
1
6.7 0.2  
10 MIN.  
2.5 0.1  
7.4 0.2  
800 MIN.  
32 MAX.  
LD  
PD  
1
2
4
CASE  
3
For further information please contact:  
FUJITSU COMPOUND SEMICONDUCTOR, INC.  
CAUTION  
Americas & R.O.W.  
2355 Zanker Rd.  
Fujitsu Compound Semiconductor Products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
San Jose, CA 95131-1138, U.S.A.  
Phone: (408) 232-9500  
FAX: (408) 428-9111  
www.fcsi.fujitsu.com  
• Do not put this product into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
FME, QDD  
Fujitsu Microelectronics Europe GmbH  
Quantum Devices Division  
Network House  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
Norreys Drive  
Maidenhead, Berkshire SL6 4FJ  
United Kingdom  
TEL: +44 (0) 1628 504800  
FAX: +44 (0) 1628 504888  
FUJITSU QUANTUM DEVICES LIMITED  
Global Business Division  
Global Sales Support Department  
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,  
Shinjuku-ku, Tokyo, 163-0721, Japan  
TEL: +81-3-5322-3356  
FUJITSU QUANTUM DEVICES  
SINGAPORE PTE LTD.  
Hong Kong Branch  
FAX: +81-3-5322-3398  
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,  
Kowloon, Hong Kong  
TEL: +852-23770226  
FAX: +852-23763269  
Fujitsu Limited reserves the right to change products and specifications without notice.  
The information does not convey any license under rights of Fujitsu Limited or others.  
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Printed in U.S.A. FCSI0200M200  
6

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