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FLL300IP-2 [FUJITSU]

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4;

FLL300IP-2


元器件型号：	FLL300IP-2
生产厂家：	FUJITSU COMPONENT LIMITED.
描述和应用：	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 局域网 CD 晶体管
PDF文件：	总2页 (文件大小：96K)
下载文档：	下载PDF数据表文档文件
型号参数：FLL300IP-2参数

FLL300IP-4

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IP, 5 PIN

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1 FUJITSU

FLL310IQ-3

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET,

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0 FUJITSU

FLL310IQ-3A

High Voltage - High Power GaAs FET

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86 EUDYNA

FLL351ME

L-band medium & high power gaas FTEs

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264 FUJITSU

FLL357ME

L-Band Medium & High Power GaAs FET

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362 EUDYNA

FLL400IK-2

High Voltage - High Power GaAs FET

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81 EUDYNA

FLL400IK-2C

High Voltage - High Power GaAs FET

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52 EUDYNA

FLL400IP-2

L-Band Medium & High Power GaAs FET

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79 EUDYNA

FLL400IP-3

L-Band Medium & High Power GaAs FET

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41 ETC

FLL400IP-3

L-Band Medium & High Power GaAs FET

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33 ETC

FLL400IP-3

L-Band Medium & High Power GaAs FET

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14 ETC

FLL410IK-3C

L-Band High Power GaAs FET

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51 EUDYNA

FLL410IK-4C

L-Band High Power GaAs FET

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107 FUJITSU

FLL55MK

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

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0 FUJITSU

FLL57MK

L-Band Medium & High Power GaAs FET

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287 EUDYNA

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