FMM3117VN [FUJITSU]
Interface Circuit, CQFP32, 6 X 6 MM, HERAMATICALLY SEALED, CERAMIC, QFP-32;
| 型号： | FMM3117VN |
| 厂家： | 
FUJITSU |
| 描述： | Interface Circuit, CQFP32, 6 X 6 MM, HERAMATICALLY SEALED, CERAMIC, QFP-32 接口集成电路 |
| 文件： | 总6页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
12.5Gb/s MI-LD
Driver IC
FMM3117VN
FEATURES
• High speed operation up to 12.5Gb/s
• On-chip 50Ω Termination for High Speed Data Input
• Low Rise/Fall Time: 25ps (Typ., 20-80%)
• Adjustable Output Voltage Swing: 2.0Vpp to 2.85Vpp (50Ω load)
• Adjustable Output Offset Level
• Single Power Supply Voltage : -5.20V
• Adjustable Duty Ratio
• Hermetically Sealed Ceramic Package (6mm x 6mm, 32-Pin)
DESCRIPTION
The FMM3117VN is a 12.5Gb/s(OC-192) driver with an output
voltage of 2.85Vpp for the differential input Lithium-Niobate modulator.
This product is uniquely suited for use as a driver for optical modulators
such as FTM7922ER. The output is adjustable for peak current, duty ratio,
and offset voltage/current. This product features am internal 50Ω termination
at both high-speed differential inputs for ease of design and use.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
V
Supply Voltage
-6.50 to 0.0
-2.0 to 0.5
500
V
V
SS
V
Input Voltage
IN
I
SS
Power Supply Current
mA
V
Peak Current Control Voltage
Output Offset Control Voltage
VSS-0.5 to VSS+2.2
-8.0 to 0.5
V
V
IP
V
IB1,2
IB
1,2
Output Offset Control Current
50
mA
V
Duty Control Voltage
Output Voltage
VSS-0.5 to VSS+2.2
-3.1 to 0.5
V
V
DUT
V
OUT
T
stg
Storage Temperature
-55 to 125
°C
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.20V, RL=50Ω)
Limit
Typ.
Parameter
Maximum Data Rate
Power Supply Current
Symbol
Test Conditions
Unit
Gbps
mA
Min.
Max.
fb
NRZ
12.5
-
-
V
=2.85Vpp, R =50Ω,
L
OUT
IB1=IB2=0mA
I
ss
-
220
280
Output Voltage Swing (max.)
Output Voltage Swing (min.)
V
2.85
-
-
-
-
Vpp
Vpp
OUTMAX
V
2.0
OUTMIN
Rise Time
Fall Time
t
t
-
-
25
25
-
35
35
-
ps
ps
V
20 to 80%,
r
f
V =2.5Vpp
OUT
Output Low Voltage (min.)
V
-3.0
OL
Din/DinB=0.50Vpp,
=2.85Vpp
Crossing Adjustment Range
Crossing
Jitter
45
-
-
-
55
%
V
OUT
Din/DinB=0.50Vpp,
Jitter RMS (OUT)
3.0
ps
V
=2.85Vpp, Cross=50%
OUT
Edition 1.1
April 2003
1
12.5Gb/s MI-LD
Driver IC
FMM3117VN
RECOMMENDED OPERATING CONDITIONS
Limit
Unit
Parameter
Supply Voltage
Symbol
Test Conditions
Min.
Max.
Typ.
V
-5.46 -5.20 -4.94
V
V
SS
Differential Input Data
Swing=0.25~1.20Vpp,
Single-ended Input Data
Swing=0.50~1.20Vpp
V
Input Data Level High
Input Data Level Low
-0.50
-1.20
-
-
0
IH
V
IL
-0.25
V
V
Differential Input
0.25
0.5
-
-
1.20
1.20
ISD
Input Data Swing
Vpp
V
ISS
Single-ended Input
V
SS
V
V
Peak Current Control Voltage
Output Offset Control Voltage
-
-
V
V
IP
SS
+2.0
V
V
0
IB1,2
SS
IB
Output Offset Control Current
Duty Control Voltage
0
-
-
-
30
mA
V
1,2
V
SS
V
DUT
V
SS
+2.0
Case Temperature
0
75
°C
T
c
Block Diagram
V
V
DUT
IP
50Ω*
75Ω*
D
D
D
IN
OUT
OUT
Voltage
Driver
B
D
IN
B
300Ω*
50Ω*
* On chip resistor values may vary
IP
IB
IB
2
1
Truth Table for DOUT and DOUT
B
D
D B
IN
D
D
B
OUT
IN
OUT
0
1
1
0
L
H
L
H
2
12.5Gb/s MI-LD
Driver IC
FMM3117VN
Electrical Eye Pattern of DOUTB [H: 20ps/Div., V:0.5V/Div.]
Tc=25°C, VSS=-5.2V, VIB1=VIB2=0V, 12.5 Gb/s, PRBS=223-1, RL=50Ω, VOUT=2.85Vpp
VOUT vs. VIP Characteristics
3.0
Vss=-5.2V, Ta=25°C,
VIB1=VIB2=0V, RL=50Ω
2.5
2.0
1.5
1.0
0.5
0.0
-5.6
-5.2
-4.8
-4.4
V (V)
-4.0
-3.6
-3.2
IP
VSS=-5.2V, Ta=25°C, VIB1=VIB2=0V, RL=50Ω
3
12.5Gb/s MI-LD
Driver IC
FMM3117VN
Recommended Circuit for Interconnection with LN Modulator
To External Bias Circuit
32 31 30 29 28 27 26 25
Sampling
Oscilloscope
ATT
1
24
IB1
2
3
4
5
6
7
8
23
22
21
20
19
18
17
R3
DIN
B
DOUT
Pulse
Pattern
Generator
Top View
DIN
ATT
DOUT
B
R3
VIP
IB2
IP
VDUT
9
10 11 12 13 14 15 16
R1
R1
R2
C2
C2
R2
C1: 0.33µF
C2: 0.068µF
R1: 0 to 500Ω(10 turns)
R2: 500Ω
R3: 50Ω
A
To External Bias Circuit
V
C1
SS
4
12.5Gb/s MI-LD
Driver IC
FMM3117VN
Recommended Circuit for Interconnection with LN Modulator
External Bias-T
50Ω
50Ω
AC Blocking
AC Blocking
DOUT
DC Blocking
To LN Modulator
FMM3117VN
DOUTB
DC Blocking
To LN Modulator
* The circuit diagram shows an example for standard operation of the product with an LN modulator.
Fujitsu assumes it is the users' responsibility for circuit implementation, such as design optimization, performance,
verification, and intellectual property right issues.
Pin Assignment
32 31 30 29 28 27 26 25
24
1
23
22
21
20
19
18
17
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
Pin Name
Pin Description
Pin
Pin
No.
Pin Name
No.
I/O
Description
I/O
Description
GND
GND
1
2
3
4
5
6
7
8
9
-
-
I
Ground
Ground
GND
GND
17
18
19
20
21
22
23
24
25
26
27
28
29
30
-
-
Ground
Ground
DINB
Complementary Data Input
Ground
DOUTB
GND
GND
DOUT
GND
GND
GND
IB1
O
-
Complementary Data Output
Ground
GND
GND
DIN
-
-
I
Ground
-
Ground
Data Input
O
-
Data Output
Ground
GND
GND
GND
VDUT
-
-
-
Ground
Ground
-
Ground
Ground
Ground
-
Duty Control Voltage
Supply Voltage
Supply Voltage
Peak Current Control Voltage
DOUT Offset Control
Ground
10
11
I
I
V
-
GND
GND
-
ss
Ground
V
12
13
-
I
-
-
ss
VIP
V
Supply Voltage
Supply Voltage
ss
V
IP
14
15
16
-
I
Peak Current Monitor (V
DOUTB Offset Control
Ground
)
-
-
-
ss
ss
IB2
GND
GND
GND
31
32
Ground
Ground
-
5
12.5Gb/s MI-LD
Driver IC
FMM3117VN
UNIT: mm
“VN” PACKAGE
32
25
24
1
4.57 0.2
8
17
16
9
4.5 0.2
2-7.0 0.2
2-8.0 0.2
For further information please contact:
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
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TEL: +81-426-43-5885
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SINGAPORE PTE LTD.
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FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0502M200
6
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