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MB3790

更新时间：2025-07-03 01:55:14

品牌：FUJITSU

描述：Battery Backup IC

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MB3790 概述

Battery Backup IC 电池备份IC

MB3790 数据手册

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS04-27502-3E

ASSP For Power Supply Applications

Bi-CMOS

Battery Backup IC

MB3790

■ DESCRIPTION

The MB3790 is designed to control power supplies to SRAM, logic IC, or other circuit devices and protects them

against momentary power failures by using backup batteries. In addition to its function to supply the power to

these devices, it has a function to switch the source of power to the primary or secondary backup battery when

the power supply voltage drops below a predetermined level. Also, it outputs a reset signal when the power supply

turns on or off or when a fault occurs in the power supply.

Ideally designed as a single-chip IC for power supply control, the MB3790 consumes only a minimal current and

comes in a thin-type package. Therefore, it is best suited for power supply control in memory cards and similar

other devices.

■ FEATURES

• Input circuit current consumption when non-loaded: 50 µA [typ]

• Output drive current: 200 mA [max]

• Resistance between input and output: 0.5 ohms [typ]

• Input power-down detection level: 4.2 V ± 2.5 %

• On-chip power-on reset circuit

• Primary battery voltage-down detection levels: 2.65 V, 2.37 V

(Continued)

■ PACKAGES

Plastic SOP, 16 pin

Plastic SSOP*, 20 pin

(FPT-16P-M06)

(FPT-20P-M04)

* : Since the SSOP is an extremely thin package, use a partial heating method when mounting the device.

MB3790

(Continued)

• On-chip secondary battery recharging function

• Output current during battery backup: V^BAT1: 500 µA [max], VBAT2: 50 µA [max]

• Leakage current: 0.5 µA [max]

■ PIN ASSIGNMENTS

(TOP VIEW)

N.C.

V ^BAT1

CONTROL

N.C.

V ^BAT1

CONTROL

N.C.

V OUT

V ^IN

V OUT

V ^IN

V OUT

V IN

V OUT

V IN

V BAT2

V SENSE

V BAT2

V SENSE

N.C.

ALARM1

ALARM2

GND

N.C.

RESET

N.C.

ALARM1

ALARM2

GND

C^T

RESET

(FPT-16P-M06)

(FPT-20P-M04)

MB3790

■ BLOCK DIAGRAM

R ^ON

=0.5Ω

V IN

V OUT

100Ω

CONTROL

SBD

V IN

590KΩ

2.65V

2.37V

Reference

voltage power

supply circuit

ALARM1

1.24V

500Ω

V IN

3 µA

ALARM2

RESET

V SENSE

V OUT

Vth:3V

240KΩ

V OUT

RESET

Vth:1.5V

GND

V ^BAT2

V BAT1

MB3790

■ PIN DESCRIPTION

Pin number

Symbol

I/O

Name and function

16P

20P

N.C.

V^BATI

V^OUT

—

Non connection

This pin connects to the primary battery.

3, 4

These pins supply the output voltage. (Range of output current value

I^OUT≤ 200 mA)

V^BAT2

I/O

This pin connects to the secondary battery. When the power supply

voltage is greater than or equal to the detection level (i.e., V^INH), the

secondary battery is recharged using the constant-voltage method of

charging.

—

6, 7

N.C.

—

Non connection

ALARM1

This is an open-collector output pin for a primary battery alarm

signal. When the power supply voltage is greater than or equal to

V^INH, it monitors the primary battery voltage. If the power supply

voltage is less than V^INL, it does not monitor the primary battery

voltage. If V^BAT1is less than or equal to 2.65 V, its output voltage is

forced to a Low level.

ALARM2

This is an open-collector output pin for a primary battery alarm

signal. When the power supply voltage is greater than or equal to

V^INH, it monitors the primary battery voltage. If the power supply

voltage is less than V^INL, it does not monitor the primary battery

voltage. If V^BAT1is less than or equal to 2.37 V, its output voltage is

forced to a Low level.

GND

—

This pin connects to the ground (0 V).

RESET

This pin outputs a reset signal. When the power supply voltage is

less than or equal to V^INL, it outputs a High level.

If the power supply voltage of SRAM is less than the designated

range, it directly controls the CE or CS of SRAM to disable writes and

thereby protect the data in memory.

RESET

C^T

This pin outputs an inverted signal of RESET.

—

This pin is used to set the reset pulse width.

Insert a capacitor between this pin and GND to set the pulse width.

—

14, 15

N.C.

—

Non connection

V^SENSE

This pin accepts comparator input for detecting the power supply

voltage level. For details, refer to APPLICATION in this data sheet.

13, 14 17, 18

V^IN

N.C.

—

These pins accept the input voltage for the device.

Non connection

CONTROL

This pin is used for output control. For details, refer to APPLICATION

in this data sheet.

MB3790

■ FUNCTIONAL DESCRIPTION

1. Battery Backup Function

• When the power supply voltage exceeds the voltage detection level (i.e., VINH), the device outputs a current of

up to 200 mA from the V^INpower supply to the load circuit via the VOUT pin.

• When the power supply voltage is less than or equal to VINL, the device switches the source of power for VOUT

from VIN to the primary or secondary battery for backup purposes.

2. Power Supply Voltage Level Detect Function

When the power supply voltage drops below VINL, the voltage level detection comparator is actuated to perform the

following (note that the detection voltage level has the hysteresis characteristics listed in ELECTRICAL CHARAC-

TERISTICS in this data sheet):

• The comparator first outputs the RESET signal (High level).

• It switches the source of power for the load circuit to the primary or secondary battery.

The power supply voltage detection level can be adjusted by fitting an external resistor to the V^SENSEpin. When

adjusting the detection level, be sure to set it to 4.0 V or higher by considering the power supply voltage for the

internal circuit operation.

In addition, the detection set time can be extended by connecting a capacitator. For this method of adjustment, refer

to APPLICATION in this data sheet.

3. Reference Voltage Circuit

This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimming-

adjusted exact reference voltage.

The reference voltage power supply is used to set the reference voltage/constant current values of the detection

circuit, as well as the secondary battery recharging voltage.

4. Power-on Reset Function

By charging the capacitator connected to the CT pin with constant current (approx. 3 µA), this function determines

the reset pulse width. The calculation formula for this is given below:

Reset pulse width t^PO(sec) CT (F) × 10⁶

(When CT = 1000 pF, tPO 1 ms [typ])

5. Primary Battery Voltage Detection Function

If the primary battery voltage drops below the detection level when the power supply voltage is greater than or equal

to V^INL, the device outputs an alarm signal (Low level) from the CMOS output pin, ALARM1 or ALARM2.

Note that the voltage level detection comparator has the hysteresis characteristics listed in ELECTRICAL CHAR-

ACTERISTICS in this data sheet.

• When the primary battery voltage is 2.65 V [typ] or less:

The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it’s time to replace the primary

battery.

• When the primary battery voltage is 2.37 V [typ] or less:

The ALARM2 output pin is forced to a low level to issue an alarm indicating that the primary battery voltage

is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)

6. Secondary Battery Recharging Function

When the power supply voltage is greater than or equal to VINL, the device recharges the secondary battery using

the constant-voltage method of charging. Note that the typical value of the device's internal recharging resistor is

500 ohms.

MB3790

■ DESCRIPTION OF OPERATION

1. Operation When the Input Voltage Goes On or Off

DV ^IN

V IN

V INH

V INL

(1)

(2)

(3)

(4)

(2)

(3)

(4)

V ^IN-DV1

V OUT

V BAT1-DVB1

t PO

V IN-DV1

RESET

V BAT1-DVB1

High level

Low level

High level

Low level

High level

RESET

V IN-DV1

Low level

High level

Low level

High level

Low level

(1) Power-on

While the power supply voltage is less than V^INH(4.3 V typ), the protected devices such as SRAM or a microprocessor

are in the standby mode with the power supplied by the battery.

When the power supply voltage rises to a level greater than or equal to V^INH, the PMOS transistor between the input/

output pins turns on and the power for such devices is supplied from the V^INpin. At the same time, the primary

battery voltage detection and the secondary battery recharging operations are actuated.

(2) Standby mode

When the power supply voltage rises to a level greater than or equal to V^INH, the RESET pin outputs a High level

for the set duration of time and the devices such as SRAM or a microprocessor are held in the standby mode. Note

that the set duration of time can be adjusted by changing the capacitance of the C^Tpin.

The RESET pin outputs an inverted signal of the RESET pin.

(3) Active mode

The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.

MB3790

(4) Momentary power failure or voltage dip

When the power supply voltage drops less than or equal to V^INL. (4.2 V typ) as the power supply goes down or its

voltage dips momentarily, the RESET pin outputs a High level and the RESET pin outputs a low level. The devices

such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When

in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped.

Note: To guarantee backup operation in case of momentary power failure, make sure the 5 V-to-0 V fall time on V^IN

is 50 µs or more by using, for example, a capacitator.

2. Alarm Operation

DV ^BAT1

DV BAT2

V BATH1

V BATL1

V BAT1

V BATH2

V BATL2

ALARM1

(1)

ALARM2

(2)

If the primary battery voltage decreases while the power supply voltage (VIN) is greater than or equal to VINH (4.3 V

typ), alarm signals are output as described below. At this time, if the V^BAT1pin is released open, the output from the

alarm pin becomes indeterminate.

(1) Primary battery replacement alarm (alarm-1 output)

If the primary battery voltage drops to V^BAT1(2.65 V typ), the ALARM1 pin is forced to a Low level to issue an alarm

indicating that it’s time to replace the primary battery.

(2) Primary battery minimum voltage alarm (alarm-2 output)

If the primary battery voltage further drops to V^BAT2(2.37 V typ), the ALARM2 pin is forced to a Low level to issue

an alarm indicating that the primary battery power has dropped below the voltage necessary to retain the SRAM

data (approx. 2.0 V).

MB3790

■ ABSOLUTE MAXIMUM RATINGS

(Ta = +25°C)

Parameter

Input voltage

Symbol

V^IN

Conditions

Rating

–0.3 to 6

Unit

Battery voltage

V^BAT

–0.3 to 6

Reset output Voltage

Alarm output Voltage

V^RESET

V^ALARM

– 0.3 to VOUT + 0.3 (≤ 6)

—

– 0.3 to VIN + 0.3 (≤ 6)

Output current

I^OUT

IOH

I^OL

°C

250

Output high current

Output low current

Source current

Sink current

SSOP

SOP

450*

Power dissipation

P^D

Ta ≤ +25°C

540*

Storage temperature

Tstg

—

–55 to +125

* : When mounted on a 4 cm-square double-side epoxy board.

WARNING: Permanent device damage may occur if the above ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to the conditions as detailed in the operational sections of

this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

■ RECOMMENDED OPERATING CONDITIONS

Value

Parameter

Symbol

Conditions

Unit

Min.

—

Typ.

5.0

3.0

—

Max.

5.5

Input voltage

V^IN

Battery voltage

Output current

VBAT

—

3.3

I^OUT

200

Supply from the

primary battery

I^O(BAT1)

—

500

Output current during

battery backup

µA

°C

Supply from the

secondary battery

I^O(BAT2)

T^op

—

Operating temperature

—

–30

+70

MB3790

■ ELECTRICAL CHARACTERISTICS

• DC characteristics

(Recommended operating conditions unless otherwise noted.)

(V^IN= +5 V, Ta = +25°C)

Value

Unit

Parameter

Symbol

I^IN1

Conditions

Min.

—

Typ.

Max.

100

All sections Input current

IOUT = 0 mA

µA

µs

DV¹

DV²

t^ro

IOUT = 1 mA

—

0.5

100

2.0

Backup

Power

Supply

Input/output voltage

difference

IOUT = 200 mA

CO = 0.01 µF, C T = 0

—

300

Section

Output delay time

—

4.10

4.05

4.20

4.15

4.20

4.30

100

4.30

4.35

4.40

4.45

150

VIN

V^INL

Ta = – 30°C to + 70°C

VIN

Input low voltage detection

V^INH

Ta = – 30°C to + 70°C

VINH – VINL

Input low voltage hysteresis

width

DV^IN

Power

Supply

Monitoring

Section

V^OHR

V^OLR

V^OHR

IOHR = 1 mA

IOLR = 5 mA

IOHR = 0.2 mA

4.5

—

4.8

0.2

2.6

—

0.4

—

Reset output voltage

during backup V ^IN= 0 V

V^BAT1= 3 V

2.2

V^OLR

IOLR = 3 mA

—

0.2

0.4

Reset pulse width

t^PO

t^PI

0.5

5.0

—

1.0

—

2.0

—

µs

CT = 1000 pF

Input pulse width

Reset output rise time

Reset output fall time

Reset output delay time

t^rR

2.0

0.2

2.0

3.0

1.0

CT = 1000 pF

C^L= 100 pF

t^fR

—

t^pdR

VIN slew rate < 0.1 V/µs

—

(Continued)

MB3790

(Continued)

(VIN = +5 V, Ta = +25°C)

Value

Unit

Parameter

Symbol

Conditions

Min.

2.55

2.52

2.59

2.56

Typ.

2.65

2.69

Max.

2.75

2.78

2.79

2.82

VBAT

V^BATL1

Ta = – 30°C to +70°C

Low voltage detection 1

VBAT

V^BATH1

DV^BAT1

V^BATL2

Ta = – 30°C to +70°C

VBATH1 – VBATL1

Low voltage detection-1

hysteresis width

2.27

2.24

2.31

2.28

2.37

2.41

2.47

2.50

2.51

2.54

VBAT

Ta = – 30°C to +70°C

Low voltage detection 2

VBAT

V^BATH2

Battery-1

Monitoring

Section

Ta = – 30°C to +70°C

VBATH2 – VBATL2

Low voltage detection-2

hysteresis width

DV^BAT2

DV^BAT

Low voltage detection

difference

VBATL1 – VBATL2

0.26

0.28

0.30

I^BATA

I^BATB

VBAT = 3 V, VIN = 0 V

VBAT = 3 V, VIN = 5 V

IBAT1 = 100 µA

–100

—

500

0.35

Battery-1 input current

Battery-1 output voltage

difference

during backup, CTL = GND

0.30

DV^B1

I^BAT1= 10 µA

—

0.10

0.15

V^OHA

V^OLA

trA

IOHA = 4 mA

IOLA = 5 mA

4.5

—

4.8

0.2

2.0

0.2

2.0

—

0.4

3.0

1.0

Alarm output voltage

Alarm output rise time

Alarm output fall time

Alarm output delay time

µs

CL = 100 pF

t^fA

t^pdA

50 mV overdrive

ICHG = –10 µA

VCHG = 2.0 V

Battery-2 recharging

voltage

V^CHG

2.80

1.0

3.00

2.0

3.20

—

Battery-2

Monitoring

Section

Battery-2 recharging current I^CHG

Battery-2 output voltage

difference

DV^B2

IBAT2 = 10 µA

—

0.10

0.15

during backup

MB3790

■ TIMING CHART

1. Rise/Fall Times on Reset and Alarm Pins: t^r/t^f

90%

RESET

ALARM1

ALARM2

10%

t r

t f

2. Reset Pulse Width: t^PO; Input Pulse Width: t^PI; Reset Output Delay Time: t^pdR

t PI

V ^IN

V INH

V INL

t PO

t pdR

V IH-DV1

RESET

V BAT1-DVB2

MB3790

3. Alarm Output delay time: t^pdA

50mV

V BATL1, V BATL2

V BAT1

50mV

t pdA

ALARM1

ALARM2

4. V^OUTOutput Delay Time: t^ro

V IN

98%

V OUT

t ro

MB3790

■ TYPICAL CHARACTERISTIC CURVES

1. VOH characteristics of RESET pin

2. VOL characteristics of RESET pin

0.5

3.0

V IN = OPEN

V ^BAT1=+3V

V IN =+5V

V ^BAT1=+3V

2.8

0.4

0.3

2.6

2.4

2.2

2.0

0.2

0.1

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

Current I (mA)

3. VOH characteristics of RESET pin

5.0

4. VOL characteristics of RESET pin

0.5

V IN = OPEN

V BAT1 =+3V

4.8

4.6

4.4

0.4

0.3

0.2

0.1

V IN =+5V

V ^BAT1=+3V

4.2

4.0

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

0.0

1.0

2.0

3.0

4.0

5.0

Current I (mA)

5. VOH characteristics of ALM pin

5.0

6. VOL characteristics of ALM pin

0.5

V IN =+5V

V BAT1 =+2V

4.8

4.6

4.4

0.4

0.3

0.2

0.1

V IN =+5V

V BAT1 =+3V

4.2

4.0

0.0

-1.0

-2.0

-3.0

-4.0

-5.0

0.0

1.0

2.0

3.0

4.0

5.0

Current I (mA)

(Continued)

MB3790

(Continued)

7. Temperature characteristics of input current

8. Temperature characteristics of battery power

detection voltage

2.9

IN =+5V

2.8

2.7

BATH1

BATL1

2.6

2.5

2.4

BATH2

BATL2

2.3

2.2

-40

-20

-40

-20

Ambient temperature Ta (°C)

7. Temperature characteristics of power-down

detection voltage

4.6

4.5

4.4

INH

INL

4.3

4.2

4.1

4.0

3.9

-40

-20

Ambient temperature Ta (°C)

MB3790

■ APPLICATION

1. Method of Using the CONTROL Pin

It is possible to control the operation of analog switch 1 by entering a High or Low level to the CONTROL pin while

being powered bythe battery. The Table below shows how the analog switch operates when its operation iscontrolled

from the CONTROL pin.

When using the primary and the secondary batteries in combination as in the case of memory cards, be sure to

set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current

flowing from analog switch 1.

• Control Conditions of CONTROL Pin

ON/OFF State of analog switch*²

Control conditions

Operating state

Standby/active state

Backup state

Input voltage (V^IN) CONTROL pin*¹

Analog switch 1

Analog switch 2

V^IN> VINL

V^INL> VIN

High/Low

OFF

High (= VOUT)

Low (= GND)

*1: If the CONTROL pin is released open, the logic state of the CMOS circuit may become instable letting current

flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input.

*2: The ON-resistance of the analog switch is approximately 10 K ohms.

Analog Switch connection Diagram

V OUT

SBD

Analog Switch 1

Analog Switch 2

V BAT1

V BAT2

Connection to the

primary battery

Connection to the

secondary battery

MB3790

3. Outputting Reset Signal Forcibly

The reset signal can be output forcibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset

signal is held on until the capacitator C^Tis charged up after the VSENSE pin is released open.

Forced Reset Method 1

V IN

47KΩ

VSENSE

GND

SW: Turned on (VRESET = High)

Forced Reset Method 2

V IN

47KΩ

VSENSE

10KΩ

Control signal

input pin

GND

10KΩ

When the voltage enough to turn on Q1 (≥ approx. 1.2 V) gives to the Control signal input pin,

VRESET is equal to High level.

[Reset Pulse Width Calculation Formula]

Reset Pulse Width t^PO(sec) = CT (F) ×10⁶(where CT = capacitance)

Example: When C^T= 1000 pF, tPO = 1 ms (Typ)

MB3790

4. Adjusting the Supply Voltage Detection Level Set time

The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 µs or

more. The set time before this reset signal is output can be extended by connecting a capacitor to the V^SENSEpin.

Adjusting the Supply Voltage Detection Level Set Time

V IN

VSENSE

t PI

GND

5. Compatibility with JEIDA Memory Card Guideline Ver. 4

The MB3790 has its ALM1 and ALM2 pin specifications matched to the BVD2 and BVD1 pin specifications of the

JEIDA Memory Card Guideline Ver. 4. Therefore, the ALM1 and ALM2 pins can be connected directly to the BVD2

and BVD1 pins.

• Alarm Pin Detection Voltage Levels

Pin Name

ALM1

V^BAT1≤ 2.37 V

Low level

2.37 V < V^BAT1≤ 2.65V

Low level

2.65 V ≤ V^BAT1

High level

Connected Pin

BVD2

ALM2

Low level

High level

BVD1

V^BAT1: Primary battery voltage

MB3790

■ STANDARD DEVICE CONFIGURATION

V IN

V BAT1

CONTROL

V IN

V OUT

C 1

V BAT2

ALARM1

C 2

ALARM1

RESET

ALARM2

GND

*1 For C1 and C2, use capacitors of 0.022 µF or more.

*2 For VIN and VOUT, connect these two pins to the mating pins, respectively.

■ ORDERING INFORMATION

Part number

MB3790PF

Package

Remarks

16 pin, Plastic SOP

(FPT-16P-M06)

MB3790PFT

20 pin, Plastic SSOP

(FPT-20P-M04)

MB3790

■ PACKAGE DIMENSIONS

16-pin, Plastic SOP

(FPT-16P-M06)

2.25(.089)MAX

10.15⁺^–0⁰^.^.²²⁰⁵.400 ⁺^–.^.⁰⁰⁰¹⁸⁰

0.05(.002)MIN

(STAND OFF)

INDEX

6.80^–⁺⁰⁰^.^.²⁴⁰⁰

5.30±0.30

7.80±0.40

.268^–⁺^.^.⁰⁰⁰¹⁸⁶

(.209±.012) (.307±.016)

"B"

1.27(.050)

TYP

0.45±0.10

(.018±.004)

0.15⁺^–0⁰^.^.⁰⁰²⁵

.006^–⁺^.^.⁰⁰⁰⁰¹²

0.50±0.20

(.020±.008)

Ø0.13(.005)

Details of "A" part

Details of "B" part

0.40(.016)

0.20(.008)

0.15(.006)

0.20(.008)

"A"

0.10(.004)

0.18(.007)MAX

0.68(.027)MAX

0.18(.007)MAX

0.68(.027)MAX

8.89(.350)REF

Dimensions in mm (inches)

1994 FUJITSU LIMITED F16015S-2C-4

(Continued)

MB3790

(Continued)

20-pin, Plastic SSOP

(CASE No.: FPT-20P-M04)

*6.50±0.10

(.256±.004)

1.10±0.10

(.043±.004)

0.10(.004)

4.40±0.10 6.40±0.20

5.40(.213)NOM

INDEX

(.173±.004) (.252±.008)

"A"

0.65±0.12

(.0256±.0047)

0.22^–⁺⁰⁰^.^.⁰¹⁵⁰

.009^–⁺^.^.⁰⁰⁰⁰²⁴

0.15^–⁺⁰⁰^.^.⁰⁰²⁵

.006^–⁺^.^.⁰⁰⁰⁰¹²

Details of "A" part

0.10±0.10

(.004±.004)

(STAND OFF)

0.50±0.20

(.020±.008)

5.85(.230)REF

0°~10°

Dimensions in mm (inches)

1994 FUJITSU LIMITED F20014S-1C-4

Since the SSOP (FPT-20P-M04) is built in an extremely thin structure, use a partial heating method when mounting

the device.

FUJITSU LIMITED

For further information please contact:

Japan

FUJITSU LIMITED

Corporate Global Business Support Division

Electronic Devices

KAWASAKI PLANT, 4-1-1, Kamikodanaka

Nakahara-ku, Kawasaki-shi

Kanagawa 211-88, Japan

Tel: (044) 754-3763

The contents of this document are subject to change without

notice. Customers are advised to consult with FUJITSU sales

representatives before ordering.

Fax: (044) 754-3329

The information and circuit diagrams in this document presented

as examples of semiconductor device applications, and are not

intended to be incorporated in devices for actual use. Also,

FUJITSU is unable to assume responsibility for infringement of

any patent rights or other rights of third parties arising from the

use of this information or circuit diagrams.

North and South America

FUJITSU MICROELECTRONICS, INC.

Semiconductor Division

3545 North First Street

San Jose, CA 95134-1804, U.S.A.

Tel: (408) 922-9000

FUJITSU semiconductor devices are intended for use in

standard applications (computers, office automation and other

office equipment, industrial, communications, and measurement

equipment, personal or household devices, etc.).

CAUTION:

Customers considering the use of our products in special

applications where failure or abnormal operation may directly

affect human lives or cause physical injury or property damage,

or where extremely high levels of reliability are demanded (such

as aerospace systems, atomic energy controls, sea floor

repeaters, vehicle operating controls, medical devices for life

support, etc.) are requested to consult with FUJITSU sales

representatives before such use. The company will not be

responsible for damages arising from such use without prior

approval.

Fax: (408) 432-9044/9045

Europe

FUJITSU MIKROELEKTRONIK GmbH

Am Siebenstein 6-10

63303 Dreieich-Buchschlag

Germany

Tel: (06103) 690-0

Fax: (06103) 690-122

Asia Paciﬁc

FUJITSU MICROELECTRONICS ASIA PTE. LIMITED

#05-08, 151 Lorong Chuan

New Tech Park

Singapore 556741

Tel: (65) 281-0770

Fax: (65) 281-0220

Any semiconductor devices have inherently a certain rate of

failure. You must protect against injury, damage or loss from

such failures by incorporating safety design measures into your

facility and equipment such as redundancy, fire protection, and

prevention of over-current levels and other abnormal operating

conditions.

If any products described in this document represent goods or

technologies subject to certain restrictions on export under the

Foreign Exchange and Foreign Trade Control Law of Japan, the

prior authorization by Japanese government should be required

for export of those products from Japan.

F9703

FUJITSU LIMITED Printed in Japan

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