MB3790

更新时间:2024-10-29 01:55:14
品牌:FUJITSU
描述:Battery Backup IC

MB3790 概述

Battery Backup IC 电池备份IC

MB3790 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS04-27502-3E  
ASSP For Power Supply Applications  
Bi-CMOS  
Battery Backup IC  
MB3790  
DESCRIPTION  
The MB3790 is designed to control power supplies to SRAM, logic IC, or other circuit devices and protects them  
against momentary power failures by using backup batteries. In addition to its function to supply the power to  
these devices, it has a function to switch the source of power to the primary or secondary backup battery when  
the power supply voltage drops below a predetermined level. Also, it outputs a reset signal when the power supply  
turns on or off or when a fault occurs in the power supply.  
Ideally designed as a single-chip IC for power supply control, the MB3790 consumes only a minimal current and  
comes in a thin-type package. Therefore, it is best suited for power supply control in memory cards and similar  
other devices.  
FEATURES  
• Input circuit current consumption when non-loaded: 50 µA [typ]  
• Output drive current: 200 mA [max]  
• Resistance between input and output: 0.5 ohms [typ]  
• Input power-down detection level: 4.2 V ± 2.5 %  
• On-chip power-on reset circuit  
• Primary battery voltage-down detection levels: 2.65 V, 2.37 V  
(Continued)  
PACKAGES  
Plastic SOP, 16 pin  
Plastic SSOP*, 20 pin  
(FPT-16P-M06)  
(FPT-20P-M04)  
* : Since the SSOP is an extremely thin package, use a partial heating method when mounting the device.  
MB3790  
(Continued)  
• On-chip secondary battery recharging function  
• Output current during battery backup: VBAT1: 500 µA [max], VBAT2: 50 µA [max]  
• Leakage current: 0.5 µA [max]  
PIN ASSIGNMENTS  
(TOP VIEW)  
(TOP VIEW)  
N.C.  
V BAT1  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
CONTROL  
N.C.  
N.C.  
V BAT1  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
CONTROL  
N.C.  
V OUT  
V IN  
V OUT  
V IN  
V OUT  
V IN  
V OUT  
V IN  
V BAT2  
V SENSE  
CT  
V BAT2  
V SENSE  
N.C.  
ALARM1  
ALARM2  
GND  
N.C.  
RESET  
RESET  
N.C.  
N.C.  
ALARM1  
ALARM2  
GND  
CT  
RESET  
RESET  
(FPT-16P-M06)  
(FPT-20P-M04)  
2
MB3790  
BLOCK DIAGRAM  
R ON  
=0.5  
V IN  
V OUT  
100Ω  
CONTROL  
SBD  
V IN  
590KΩ  
2.65V  
2.37V  
Reference  
voltage power  
supply circuit  
+
ALARM1  
1.24V  
-
500Ω  
V IN  
+
+
-
3 µA  
S
R
Q
ALARM2  
RESET  
V SENSE  
-
V OUT  
Vth:3V  
240KΩ  
V OUT  
RESET  
Vth:1.5V  
GND  
CT  
V BAT2  
V BAT1  
3
MB3790  
PIN DESCRIPTION  
Pin number  
Symbol  
I/O  
Name and function  
16P  
1
20P  
1
N.C.  
VBATI  
VOUT  
I
Non connection  
2
2
This pin connects to the primary battery.  
3, 4  
3, 4  
O
These pins supply the output voltage. (Range of output current value  
IOUT 200 mA)  
5
5
VBAT2  
I/O  
This pin connects to the secondary battery. When the power supply  
voltage is greater than or equal to the detection level (i.e., VINH), the  
secondary battery is recharged using the constant-voltage method of  
charging.  
6
6, 7  
8
N.C.  
O
Non connection  
ALARM1  
This is an open-collector output pin for a primary battery alarm  
signal. When the power supply voltage is greater than or equal to  
VINH, it monitors the primary battery voltage. If the power supply  
voltage is less than VINL, it does not monitor the primary battery  
voltage. If VBAT1 is less than or equal to 2.65 V, its output voltage is  
forced to a Low level.  
7
9
ALARM2  
O
This is an open-collector output pin for a primary battery alarm  
signal. When the power supply voltage is greater than or equal to  
VINH, it monitors the primary battery voltage. If the power supply  
voltage is less than VINL, it does not monitor the primary battery  
voltage. If VBAT1 is less than or equal to 2.37 V, its output voltage is  
forced to a Low level.  
8
9
10  
11  
GND  
O
This pin connects to the ground (0 V).  
RESET  
This pin outputs a reset signal. When the power supply voltage is  
less than or equal to VINL, it outputs a High level.  
If the power supply voltage of SRAM is less than the designated  
range, it directly controls the CE or CS of SRAM to disable writes and  
thereby protect the data in memory.  
10  
11  
12  
13  
RESET  
CT  
O
This pin outputs an inverted signal of RESET.  
This pin is used to set the reset pulse width.  
Insert a capacitor between this pin and GND to set the pulse width.  
14, 15  
16  
N.C.  
I
Non connection  
12  
VSENSE  
This pin accepts comparator input for detecting the power supply  
voltage level. For details, refer to APPLICATION in this data sheet.  
13, 14 17, 18  
VIN  
N.C.  
I
I
These pins accept the input voltage for the device.  
Non connection  
15  
16  
19  
20  
CONTROL  
This pin is used for output control. For details, refer to APPLICATION  
in this data sheet.  
4
MB3790  
FUNCTIONAL DESCRIPTION  
1. Battery Backup Function  
• When the power supply voltage exceeds the voltage detection level (i.e., VINH), the device outputs a current of  
up to 200 mA from the VIN power supply to the load circuit via the VOUT pin.  
• When the power supply voltage is less than or equal to VINL, the device switches the source of power for VOUT  
from VIN to the primary or secondary battery for backup purposes.  
2. Power Supply Voltage Level Detect Function  
When the power supply voltage drops below VINL, the voltage level detection comparator is actuated to perform the  
following (note that the detection voltage level has the hysteresis characteristics listed in ELECTRICAL CHARAC-  
TERISTICS in this data sheet):  
• The comparator first outputs the RESET signal (High level).  
• It switches the source of power for the load circuit to the primary or secondary battery.  
The power supply voltage detection level can be adjusted by fitting an external resistor to the VSENSE pin. When  
adjusting the detection level, be sure to set it to 4.0 V or higher by considering the power supply voltage for the  
internal circuit operation.  
In addition, the detection set time can be extended by connecting a capacitator. For this method of adjustment, refer  
to APPLICATION in this data sheet.  
3. Reference Voltage Circuit  
This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimming-  
adjusted exact reference voltage.  
The reference voltage power supply is used to set the reference voltage/constant current values of the detection  
circuit, as well as the secondary battery recharging voltage.  
4. Power-on Reset Function  
By charging the capacitator connected to the CT pin with constant current (approx. 3 µA), this function determines  
the reset pulse width. The calculation formula for this is given below:  
Reset pulse width tPO (sec) CT (F) × 106  
(When CT = 1000 pF, tPO 1 ms [typ])  
5. Primary Battery Voltage Detection Function  
If the primary battery voltage drops below the detection level when the power supply voltage is greater than or equal  
to VINL, the device outputs an alarm signal (Low level) from the CMOS output pin, ALARM1 or ALARM2.  
Note that the voltage level detection comparator has the hysteresis characteristics listed in ELECTRICAL CHAR-  
ACTERISTICS in this data sheet.  
• When the primary battery voltage is 2.65 V [typ] or less:  
The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it’s time to replace the primary  
battery.  
• When the primary battery voltage is 2.37 V [typ] or less:  
The ALARM2 output pin is forced to a low level to issue an alarm indicating that the primary battery voltage  
is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)  
6. Secondary Battery Recharging Function  
When the power supply voltage is greater than or equal to VINL, the device recharges the secondary battery using  
the constant-voltage method of charging. Note that the typical value of the device's internal recharging resistor is  
500 ohms.  
5
MB3790  
DESCRIPTION OF OPERATION  
1. Operation When the Input Voltage Goes On or Off  
DV IN  
V IN  
V INH  
V INL  
(1)  
(2)  
(3)  
(4)  
(2)  
(3)  
(4)  
V IN-DV1  
V OUT  
V BAT1-DVB1  
t PO  
t PO  
V IN-DV1  
RESET  
V BAT1-DVB1  
High level  
Low level  
High level  
Low level  
High level  
RESET  
V IN-DV1  
Low level  
High level  
Low level  
High level  
Low level  
(1) Power-on  
While the power supply voltage is less than VINH (4.3 V typ), the protected devices such as SRAM or a microprocessor  
are in the standby mode with the power supplied by the battery.  
When the power supply voltage rises to a level greater than or equal to VINH, the PMOS transistor between the input/  
output pins turns on and the power for such devices is supplied from the VIN pin. At the same time, the primary  
battery voltage detection and the secondary battery recharging operations are actuated.  
(2) Standby mode  
When the power supply voltage rises to a level greater than or equal to VINH, the RESET pin outputs a High level  
for the set duration of time and the devices such as SRAM or a microprocessor are held in the standby mode. Note  
that the set duration of time can be adjusted by changing the capacitance of the CT pin.  
The RESET pin outputs an inverted signal of the RESET pin.  
(3) Active mode  
The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.  
6
MB3790  
(4) Momentary power failure or voltage dip  
When the power supply voltage drops less than or equal to VINL. (4.2 V typ) as the power supply goes down or its  
voltage dips momentarily, the RESET pin outputs a High level and the RESET pin outputs a low level. The devices  
such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When  
in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped.  
Note: To guarantee backup operation in case of momentary power failure, make sure the 5 V-to-0 V fall time on VIN  
is 50 µs or more by using, for example, a capacitator.  
2. Alarm Operation  
DV BAT1  
DV BAT2  
V BATH1  
V BATL1  
V BAT1  
V BATH2  
V BATL2  
ALARM1  
(1)  
(1)  
ALARM2  
(2)  
(2)  
If the primary battery voltage decreases while the power supply voltage (VIN) is greater than or equal to VINH (4.3 V  
typ), alarm signals are output as described below. At this time, if the VBAT1 pin is released open, the output from the  
alarm pin becomes indeterminate.  
(1) Primary battery replacement alarm (alarm-1 output)  
If the primary battery voltage drops to VBAT1 (2.65 V typ), the ALARM1 pin is forced to a Low level to issue an alarm  
indicating that it’s time to replace the primary battery.  
(2) Primary battery minimum voltage alarm (alarm-2 output)  
If the primary battery voltage further drops to VBAT2 (2.37 V typ), the ALARM2 pin is forced to a Low level to issue  
an alarm indicating that the primary battery power has dropped below the voltage necessary to retain the SRAM  
data (approx. 2.0 V).  
7
MB3790  
ABSOLUTE MAXIMUM RATINGS  
(Ta = +25°C)  
Parameter  
Input voltage  
Symbol  
VIN  
Conditions  
Rating  
–0.3 to 6  
Unit  
V
Battery voltage  
VBAT  
–0.3 to 6  
V
Reset output Voltage  
Alarm output Voltage  
VRESET  
VALARM  
– 0.3 to VOUT + 0.3 (6)  
V
V
– 0.3 to VIN + 0.3 (6)  
Output current  
IOUT  
IOH  
IOL  
mA  
mA  
mA  
mW  
mW  
°C  
250  
6
Output high current  
Output low current  
Source current  
Sink current  
6
SSOP  
SOP  
450*  
Power dissipation  
PD  
Ta +25°C  
540*  
Storage temperature  
Tstg  
–55 to +125  
* : When mounted on a 4 cm-square double-side epoxy board.  
WARNING: Permanent device damage may occur if the above ABSOLUTE MAXIMUM RATINGS are exceeded.  
Functional operation should be restricted to the conditions as detailed in the operational sections of  
this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect  
device reliability.  
RECOMMENDED OPERATING CONDITIONS  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
Typ.  
5.0  
3.0  
Max.  
5.5  
Input voltage  
VIN  
V
V
Battery voltage  
Output current  
VBAT  
3.3  
IOUT  
0
200  
mA  
Supply from the  
primary battery  
IO(BAT1)  
500  
Output current during  
battery backup  
µA  
°C  
Supply from the  
secondary battery  
IO(BAT2)  
Top  
50  
Operating temperature  
–30  
+70  
8
MB3790  
ELECTRICAL CHARACTERISTICS  
• DC characteristics  
(Recommended operating conditions unless otherwise noted.)  
(VIN = +5 V, Ta = +25°C)  
Value  
Unit  
Parameter  
Symbol  
IIN1  
Conditions  
Min.  
Typ.  
Max.  
100  
10  
All sections Input current  
IOUT = 0 mA  
50  
µA  
mV  
mV  
µs  
DV1  
DV2  
tro  
IOUT = 1 mA  
0.5  
100  
2.0  
Backup  
Power  
Supply  
Input/output voltage  
difference  
IOUT = 200 mA  
CO = 0.01 µF, C T = 0  
300  
10  
Section  
Output delay time  
4.10  
4.05  
4.20  
4.15  
50  
4.20  
4.20  
4.30  
4.30  
100  
4.30  
4.35  
4.40  
4.45  
150  
V
V
VIN  
VINL  
Ta = – 30°C to + 70°C  
VIN  
Input low voltage detection  
V
VINH  
Ta = – 30°C to + 70°C  
VINH – VINL  
V
Input low voltage hysteresis  
width  
DVIN  
mV  
Power  
Supply  
Monitoring  
Section  
VOHR  
VOLR  
VOHR  
IOHR = 1 mA  
IOLR = 5 mA  
IOHR = 0.2 mA  
4.5  
4.8  
0.2  
2.6  
0.4  
V
V
V
Reset output voltage  
Reset output voltage  
during backup V IN = 0 V  
VBAT1 = 3 V  
2.2  
VOLR  
IOLR = 3 mA  
0.2  
0.4  
V
Reset pulse width  
tPO  
tPI  
0.5  
5.0  
1.0  
2.0  
ms  
µs  
µs  
µs  
µs  
CT = 1000 pF  
Input pulse width  
Reset output rise time  
Reset output fall time  
Reset output delay time  
trR  
2.0  
0.2  
2.0  
3.0  
1.0  
10  
CT = 1000 pF  
CL = 100 pF  
tfR  
tpdR  
VIN slew rate < 0.1 V/µs  
(Continued)  
9
MB3790  
(Continued)  
(VIN = +5 V, Ta = +25°C)  
Value  
Unit  
Parameter  
Symbol  
Conditions  
Min.  
2.55  
2.52  
2.59  
2.56  
20  
Typ.  
2.65  
2.65  
2.69  
2.69  
40  
Max.  
2.75  
2.78  
2.79  
2.82  
60  
V
V
VBAT  
VBATL1  
Ta = – 30°C to +70°C  
Low voltage detection 1  
V
VBAT  
VBATH1  
DVBAT1  
VBATL2  
Ta = – 30°C to +70°C  
VBATH1 – VBATL1  
V
Low voltage detection-1  
hysteresis width  
mV  
2.27  
2.24  
2.31  
2.28  
20  
2.37  
2.37  
2.41  
2.41  
40  
2.47  
2.50  
2.51  
2.54  
60  
V
V
VBAT  
Ta = – 30°C to +70°C  
Low voltage detection 2  
V
VBAT  
VBATH2  
Battery-1  
Monitoring  
Section  
Ta = – 30°C to +70°C  
VBATH2 – VBATL2  
V
Low voltage detection-2  
hysteresis width  
DVBAT2  
DVBAT  
mV  
Low voltage detection  
difference  
VBATL1 – VBATL2  
0.26  
0.28  
0.30  
V
IBATA  
IBATB  
VBAT = 3 V, VIN = 0 V  
VBAT = 3 V, VIN = 5 V  
IBAT1 = 100 µA  
–100  
–100  
500  
500  
0.35  
nA  
nA  
V
Battery-1 input current  
Battery-1 output voltage  
difference  
during backup, CTL = GND  
0.30  
DVB1  
IBAT1 = 10 µA  
0.10  
0.15  
V
VOHA  
VOLA  
trA  
IOHA = 4 mA  
IOLA = 5 mA  
4.5  
4.8  
0.2  
2.0  
0.2  
2.0  
0.4  
3.0  
1.0  
10  
V
V
Alarm output voltage  
Alarm output rise time  
Alarm output fall time  
Alarm output delay time  
µs  
µs  
µs  
CL = 100 pF  
tfA  
tpdA  
50 mV overdrive  
ICHG = –10 µA  
VCHG = 2.0 V  
Battery-2 recharging  
voltage  
VCHG  
2.80  
1.0  
3.00  
2.0  
3.20  
V
Battery-2  
Monitoring  
Section  
Battery-2 recharging current ICHG  
Battery-2 output voltage  
mA  
difference  
DVB2  
IBAT2 = 10 µA  
0.10  
0.15  
V
during backup  
10  
MB3790  
TIMING CHART  
1. Rise/Fall Times on Reset and Alarm Pins: tr/tf  
90%  
90%  
RESET  
RESET  
ALARM1  
ALARM2  
10%  
10%  
t r  
t f  
2. Reset Pulse Width: tPO; Input Pulse Width: tPI; Reset Output Delay Time: tpdR  
t PI  
5V  
V IN  
V INH  
V INL  
4V  
t PO  
t pdR  
t pdR  
V IH-DV1  
RESET  
V BAT1-DVB2  
11  
MB3790  
3. Alarm Output delay time: tpdA  
50mV  
V BATL1, V BATL2  
V BAT1  
50mV  
t pdA  
ALARM1  
ALARM2  
4. VOUT Output Delay Time: tro  
5V  
V IN  
98%  
V OUT  
t ro  
12  
MB3790  
TYPICAL CHARACTERISTIC CURVES  
1. VOH characteristics of RESET pin  
2. VOL characteristics of RESET pin  
0.5  
3.0  
V IN = OPEN  
V BAT1 =+3V  
V IN =+5V  
V BAT1 =+3V  
2.8  
0.4  
0.3  
2.6  
2.4  
2.2  
2.0  
0.2  
0.1  
0
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Current I (mA)  
Current I (mA)  
3. VOH characteristics of RESET pin  
5.0  
4. VOL characteristics of RESET pin  
0.5  
V IN = OPEN  
V BAT1 =+3V  
4.8  
4.6  
4.4  
0.4  
0.3  
0.2  
0.1  
0
V IN =+5V  
V BAT1 =+3V  
4.2  
4.0  
0.0  
-0.4  
-0.8  
-1.2  
-1.6  
-2.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Current I (mA)  
Current I (mA)  
5. VOH characteristics of ALM pin  
5.0  
6. VOL characteristics of ALM pin  
0.5  
V IN =+5V  
V BAT1 =+2V  
4.8  
4.6  
4.4  
0.4  
0.3  
0.2  
0.1  
0
V IN =+5V  
V BAT1 =+3V  
4.2  
4.0  
0.0  
-1.0  
-2.0  
-3.0  
-4.0  
-5.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Current I (mA)  
Current I (mA)  
(Continued)  
13  
MB3790  
(Continued)  
7. Temperature characteristics of input current  
8. Temperature characteristics of battery power  
detection voltage  
70  
60  
50  
2.9  
V
IN =+5V  
2.8  
2.7  
V
V
BATH1  
BATL1  
40  
30  
20  
2.6  
2.5  
2.4  
V
V
BATH2  
BATL2  
10  
0
2.3  
2.2  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
7. Temperature characteristics of power-down  
detection voltage  
4.6  
4.5  
4.4  
V
V
INH  
INL  
4.3  
4.2  
4.1  
4.0  
3.9  
-40  
-20  
0
20  
40  
60  
80  
Ambient temperature Ta (°C)  
14  
MB3790  
APPLICATION  
1. Method of Using the CONTROL Pin  
It is possible to control the operation of analog switch 1 by entering a High or Low level to the CONTROL pin while  
being powered bythe battery. The Table below shows how the analog switch operates when its operation iscontrolled  
from the CONTROL pin.  
When using the primary and the secondary batteries in combination as in the case of memory cards, be sure to  
set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current  
flowing from analog switch 1.  
• Control Conditions of CONTROL Pin  
ON/OFF State of analog switch*2  
Control conditions  
Operating state  
Standby/active state  
Backup state  
Input voltage (VIN) CONTROL pin*1  
Analog switch 1  
Analog switch 2  
VIN > VINL  
VINL > VIN  
VINL > VIN  
High/Low  
OFF  
OFF  
ON  
OFF  
ON  
High (= VOUT)  
Low (= GND)  
ON  
*1: If the CONTROL pin is released open, the logic state of the CMOS circuit may become instable letting current  
flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input.  
*2: The ON-resistance of the analog switch is approximately 10 K ohms.  
Analog Switch connection Diagram  
V OUT  
SBD  
Analog Switch 1  
Analog Switch 2  
V BAT1  
V BAT2  
Connection to the  
primary battery  
Connection to the  
secondary battery  
15  
MB3790  
3. Outputting Reset Signal Forcibly  
The reset signal can be output forcibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset  
signal is held on until the capacitator CT is charged up after the VSENSE pin is released open.  
Forced Reset Method 1  
V IN  
V IN  
CT  
47KΩ  
VSENSE  
CT  
SW  
GND  
SW: Turned on (VRESET = High)  
Forced Reset Method 2  
V IN  
V IN  
CT  
47KΩ  
VSENSE  
CT  
10KΩ  
Control signal  
input pin  
Q1  
GND  
10KΩ  
When the voltage enough to turn on Q1 (approx. 1.2 V) gives to the Control signal input pin,  
VRESET is equal to High level.  
[Reset Pulse Width Calculation Formula]  
Reset Pulse Width tPO (sec) = CT (F) ×106 (where CT = capacitance)  
Example: When CT = 1000 pF, tPO = 1 ms (Typ)  
16  
MB3790  
4. Adjusting the Supply Voltage Detection Level Set time  
The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 µs or  
more. The set time before this reset signal is output can be extended by connecting a capacitor to the VSENSE pin.  
Adjusting the Supply Voltage Detection Level Set Time  
V IN  
V IN  
5V  
4V  
VSENSE  
t PI  
C
GND  
5. Compatibility with JEIDA Memory Card Guideline Ver. 4  
The MB3790 has its ALM1 and ALM2 pin specifications matched to the BVD2 and BVD1 pin specifications of the  
JEIDA Memory Card Guideline Ver. 4. Therefore, the ALM1 and ALM2 pins can be connected directly to the BVD2  
and BVD1 pins.  
• Alarm Pin Detection Voltage Levels  
Pin Name  
ALM1  
VBAT1 2.37 V  
Low level  
2.37 V < VBAT1 2.65V  
Low level  
2.65 V VBAT1  
High level  
Connected Pin  
BVD2  
ALM2  
Low level  
High level  
High level  
BVD1  
VBAT1: Primary battery voltage  
17  
MB3790  
STANDARD DEVICE CONFIGURATION  
V IN  
V BAT1  
CONTROL  
*2  
*2  
V IN  
V IN  
V OUT  
*1  
V OUT  
C 1  
V BAT2  
L
O
G
I
S
R
A
*1  
ALARM1  
C 2  
ALARM1  
CT  
RESET  
RESET  
M
C
ALARM2  
ALARM2  
GND  
CT  
GND  
*1 For C1 and C2, use capacitors of 0.022 µF or more.  
*2 For VIN and VOUT, connect these two pins to the mating pins, respectively.  
ORDERING INFORMATION  
Part number  
MB3790PF  
Package  
Remarks  
16 pin, Plastic SOP  
(FPT-16P-M06)  
MB3790PFT  
20 pin, Plastic SSOP  
(FPT-20P-M04)  
18  
MB3790  
PACKAGE DIMENSIONS  
16-pin, Plastic SOP  
(FPT-16P-M06)  
2.25(.089)MAX  
10.15+00..2205 .400 +..000180  
0.05(.002)MIN  
(STAND OFF)  
INDEX  
6.80+00..2400  
5.30±0.30  
7.80±0.40  
.268+..000186  
(.209±.012) (.307±.016)  
"B"  
1.27(.050)  
TYP  
0.45±0.10  
(.018±.004)  
0.15+00..0025  
.006+..000012  
0.50±0.20  
(.020±.008)  
M
Ø0.13(.005)  
Details of "A" part  
Details of "B" part  
0.40(.016)  
0.20(.008)  
0.15(.006)  
0.20(.008)  
"A"  
0.10(.004)  
0.18(.007)MAX  
0.68(.027)MAX  
0.18(.007)MAX  
0.68(.027)MAX  
8.89(.350)REF  
Dimensions in mm (inches)  
C
1994 FUJITSU LIMITED F16015S-2C-4  
(Continued)  
19  
MB3790  
(Continued)  
20-pin, Plastic SSOP  
(CASE No.: FPT-20P-M04)  
*6.50±0.10  
(.256±.004)  
1.10±0.10  
(.043±.004)  
0.10(.004)  
4.40±0.10 6.40±0.20  
*
5.40(.213)NOM  
INDEX  
(.173±.004) (.252±.008)  
"A"  
0.65±0.12  
(.0256±.0047)  
0.22+00..0150  
.009+..000024  
0.15+00..0025  
.006+..000012  
Details of "A" part  
0.10±0.10  
(.004±.004)  
(STAND OFF)  
0.50±0.20  
(.020±.008)  
5.85(.230)REF  
0°~10°  
Dimensions in mm (inches)  
C
1994 FUJITSU LIMITED F20014S-1C-4  
Since the SSOP (FPT-20P-M04) is built in an extremely thin structure, use a partial heating method when mounting  
the device.  
20  
FUJITSU LIMITED  
For further information please contact:  
Japan  
FUJITSU LIMITED  
Corporate Global Business Support Division  
Electronic Devices  
KAWASAKI PLANT, 4-1-1, Kamikodanaka  
Nakahara-ku, Kawasaki-shi  
Kanagawa 211-88, Japan  
Tel: (044) 754-3763  
All Rights Reserved.  
The contents of this document are subject to change without  
notice. Customers are advised to consult with FUJITSU sales  
representatives before ordering.  
Fax: (044) 754-3329  
The information and circuit diagrams in this document presented  
as examples of semiconductor device applications, and are not  
intended to be incorporated in devices for actual use. Also,  
FUJITSU is unable to assume responsibility for infringement of  
any patent rights or other rights of third parties arising from the  
use of this information or circuit diagrams.  
North and South America  
FUJITSU MICROELECTRONICS, INC.  
Semiconductor Division  
3545 North First Street  
San Jose, CA 95134-1804, U.S.A.  
Tel: (408) 922-9000  
FUJITSU semiconductor devices are intended for use in  
standard applications (computers, office automation and other  
office equipment, industrial, communications, and measurement  
equipment, personal or household devices, etc.).  
CAUTION:  
Customers considering the use of our products in special  
applications where failure or abnormal operation may directly  
affect human lives or cause physical injury or property damage,  
or where extremely high levels of reliability are demanded (such  
as aerospace systems, atomic energy controls, sea floor  
repeaters, vehicle operating controls, medical devices for life  
support, etc.) are requested to consult with FUJITSU sales  
representatives before such use. The company will not be  
responsible for damages arising from such use without prior  
approval.  
Fax: (408) 432-9044/9045  
Europe  
FUJITSU MIKROELEKTRONIK GmbH  
Am Siebenstein 6-10  
63303 Dreieich-Buchschlag  
Germany  
Tel: (06103) 690-0  
Fax: (06103) 690-122  
Asia Pacific  
FUJITSU MICROELECTRONICS ASIA PTE. LIMITED  
#05-08, 151 Lorong Chuan  
New Tech Park  
Singapore 556741  
Tel: (65) 281-0770  
Fax: (65) 281-0220  
Any semiconductor devices have inherently a certain rate of  
failure. You must protect against injury, damage or loss from  
such failures by incorporating safety design measures into your  
facility and equipment such as redundancy, fire protection, and  
prevention of over-current levels and other abnormal operating  
conditions.  
If any products described in this document represent goods or  
technologies subject to certain restrictions on export under the  
Foreign Exchange and Foreign Trade Control Law of Japan, the  
prior authorization by Japanese government should be required  
for export of those products from Japan.  
F9703  
FUJITSU LIMITED Printed in Japan  

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