MB42M001PV [FUJITSU]
Analog Circuit, 1 Func, LCC-20;型号: | MB42M001PV |
厂家: | FUJITSU |
描述: | Analog Circuit, 1 Func, LCC-20 |
文件: | 总52页 (文件大小:2780K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FUJITSU MICROELECTRONICS
DATA SHEET
DS04–29135–1E
ASSP
3ch Capacitive Sensor IC with Internal Non-volatile Memory
3ch Sensor Conditioner IC
MB42M001
■ DESCRIPTION
The MB42M001 IC converts changes in the capacitance of a capacitive sensor into changes in the output
voltage.
The IC integrates a C-V (Capacitance - Voltage) converter circuit, a voltage amplifier, and a regulator circuit
and can be adjusted to provide an optimal match with the characteristics of the sensor. The adjustment
circuit can be controlled externally via a serial interface and the adjustment data can be stored in internal
non-volatile memory. The IC supports up to three capacitive sensor channels, each of which can be
adjusted independently.
■ APPLICATION
• Detection of capacitance changes in capacitive sensors
• 3-axis capacitive acceleration sensors
• Capacitive pressure sensors
■ FEATURES
• Convert and amplify the changes in the capacitance of a capacitive sensor and output this as an analog
voltage
• Can connect up to three capacitive sensor channels
• Sensor capacitance tolerance: 0 pF to 100 pF(depends on sensitivity setting in IC)
• Sensor capacitance detection tolerance: 0.05 V/pF to 100 V/pF
• The C-V conversion gain and offset adjustment can be set via the serial interface
• Internal non-volatile flash memory (1280 bit) can store the gain and offset adjustment for the C-V
conversion circuit
• The temperature characteristics of the sensor can be corrected by adjusting the offset which incorporates
a temperature coefficient
• Includes a shutdown function
• Supply voltage: VDD = 2.7 V to 5.5 V
• Power supply current in 3ch mode: IDD (normal) = 280 µA@VDD = 3 V, 1ch mode: IDD (normal) =
220 µA@VDD = 3 V
Copyright©2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2008.12
MB42M001
■ PIN ASSIGNMENT
• Package: BCC-32
(TOP VIEW)
24 23 22 21 20 19 18
25
26
17
16
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
VOUT_B
VOUT_C
VDD
27
28
29
30
31
32
15
14
13
12
11
10
AGND1
VREF
VFA
SD
9
VDD_M
1
2
3
4
5
6
7
8
(LCC-32P-M08)
Pin
Pin
No.
Pin Name
Pin Description
Pin Name
Pin Description
No.
17
18
19
20
21
1
TEST_ME Pin for IC shipping test
TEST_MV Pin for IC shipping test
VOUT_A A channel output pin
2
FLT2B
FLT2A
B channel output filter 2
A channel output filter 2
A channel output filter 1
B channel output filter 1
3
CS
CLK
DIN
Serial I/F chip select
Serial I/F clock input
Serial I/F data input
4
FLT1A
FLT1B
FLT1C/
VSRV
5
6
DOUT
Serial I/F data output
22
23
C channel output filter 1/VSRV
7
ALARM Monitor I/O
VMT Monitor I/O
VDD_M Powersupplypinformemory
FLT2C
C channel output filter 2
8
24 SIN_COM COM (common) pin of capacitance sensor
9
25
26
27
28
29
30
31
32
SIN1C
SIN2C
C channel sensor connection pin
C channel sensor connection pin
10
11
12
13
14
SD
VFA
Shutdown input
Regulator output
AGND2 Analog GND pin
VREF
Reference voltage output
SIN1A
SIN2A
DGND
SIN1B
SIN2B
A channel sensor connection pin
AGND1 Analog GND pin
VDD Power supply pin
A channel sensor connection pin
Digital GND pin
15 VOUT_C C channel output pin
16 VOUT_B B channel output pin
B channel sensor connection pin
B channel sensor connection pin
2
DS04–29135–1E
MB42M001
■ DESCRIPTION OF PIN FUNCTIONS
1. Power Supply Pins
Pin Name
I/O
Description of Pin Function
VDD is a power supply pin.
I/O Equivalent Circuit
VDD_M is a power supply pin for memory.
• Connect a power supply stabilization capacitor
close to the IC pin(chip capacitor 1 µF or more).
[Normal operation]
Power supply
VDD_M
To memory
circuitpower
supply
VDD_M
(2.7 V to 5.5 V)
Power
VDD,
VDD
IC
VDD_M
supply pins
To analog
circuitpower
supply
VDD
[When writing to memory]
Power supply 5.0 V
VDD_M
Power supply (2.7 V to 5.5 V)
VDD
IC
AGND1 and AGND2 are the analog GND pins.
DGND is the digital GND pin.
AGND1,
AGND2,
DGND
GND pins
In the connection to the external power supply,
connect all GND pin to a common point.
2. Reference Voltage Source, Regulator Pin
Pin Name
I/O
Description of Pin Function
I/O Equivalent Circuit
Capacitor connection pin for the regulator for the
IC internal circuit.
VDD (2.7 V to 5.5 V)
• Connect a capacitor (1 µF or more
recommended) between the VFA pin and GND
to stabilize the voltage. Use a ceramic capacitor
and connect close to the VFA pin.
To analog
output pin
VFA
VFA
• The VFA voltage is used as the power supply
for the internal circuits in the IC (VFA = 2.6 V to
2.87 V).
VFA
Capacitor connection pin for the reference
voltage for analog circuits.
VDD / VFA
Connect a capacitor (1 µF or more
recommended) between VREF pin and GND to
stabilize the voltage. Use a ceramic capacitor
and connect close to the VREF pin.
To analog
output pin
VREF
VREF
VREF
DS04–29135–1E
3
MB42M001
3. Pins for Connecting Sensor Element
Pin Name
I/O
Description of Pin Function
I/O Equivalent Circuit
These pins connect to the sensor elements.
1) SIN1A/SIN2A: connection pin for A channel
2) SIN1B/SIN2B: connection pin for B channel
3) SIN1C/SIN2C: connection pin for C channel
VDD / VFA
SIN1A,
SIN2A,
SIN1B,
SIN2B,
SIN1C,
SIN2C
To analog When the capacitances are such that
SINxx
I/O pin
SIN1x>SIN2x, the output voltage becomes
positive. (The capacitance is the total
capacitance internal and external to the IC.)
Note: Take care to prevent any DC path from the
SINxx pins. This excludes the case when
the CV amplifier is in V mode.
These pins connect to the sensor elements.
1) When the CV amplifier is operating in C mode
Connect to the COM (common) pin of the pair
capacitance sensor. Install a GND shield
between the SIN_COM pin and SINxx pins if
possible.
VDD / VFA
To analog
input pin
SIN_COM
SIN_COM
2) Leave open circuit when the CV amplifier is
operating in V or T mode.
4. Filter Pins
Pin Name
I/O
Description of Pin Function
I/O Equivalent Circuit
These pins connect to the low pass filter
capacitors.
1) FLT1A and FLT2A are the connection pins for
A channel.
2) FLT1B and FLT2B are the connection pins for
B channel.
VFA VDD
FLT1A,
FLT2A
Amp3
FLT2x
FLT1x
Approx.
110 kΩ
Approx.
110 kΩ
To analog
output pin
3) FLT2C is the connection pin for C channel.
FLT1B,
FLT2B
Notes : • Connect a capacitance (4.7 nF or more)
to FLT2x.
FLT2C
Amp2
• Connect to FLT1x if needed.
Example : CFLT1 = 10 nF , CFLT2 = 15 nF
The function of the FLT1C/VSRV pin is selected
by the SRV register setting.
VFA VDD
Amp3
FLT2C
[Function 1 : FLT1C]
Connect the low pass filter capacitor used for the
C channel filter.
FLT1C/
VSRV
To analog
output pin
Amp2
FLT1C/
VSRV
[Function 2 : VSRV]
Connect a capacitor (1 µF or more) between the
AGND pins to stabilize the VSRV voltage which
uses SRV to bias the CV amplifier.
VSRV
4
DS04–29135–1E
MB42M001
5. Serial Interface and Shutdown Pins
Pin Name
I/O
Description of Pin Function
I/O Equivalent Circuit
Chip select for the serial interface
• CMOS digital input pin
VDD
• With pull-down resistor (250 kΩ typical)
• CS = “H”: Enables communication
• CS = “L”: Disables communication. The DOUT
pin output goes to “Z”.
Digital
input pin
CS
CS
Clock input for the serial interface
• CMOS digital input pin
VDD
• With pull-down resistor (120 kΩ typical)
Digital
input pin
CLK
DIN
CLK
Data input for the serial interface
• CMOS digital input pin
• With pull-down resistor (approx. 500 kΩ)
VDD
Digital
input pin
DIN
Data output for the serial interface
VDD
1) Tri-state CMOS digital output pin
When the CS pin is “L”, the DOUT output goes
to “Z”.
Digital
DOUT
DOUT output pin
(Tri-state)
2) Outputs the busy state during serial
communications or while the sequencer inside
IC is operating (Normal is Low, busy state is
High).
3) Outputs flash memory data.
Shutdown pin
• CMOS input pin, no pull-down resistor.
VDD
4 types of mode can be selected by combination
of the SD, DIN and CS pins.
SD
For detail, see “■POWER-ON AND SHUTDOWN
FUNCTIONS 4 Operation modes specified by the
SD pin and serial interface input pins”.
Digital
SD
input pin
Note: Notation used for logic levels
“H” : CMOS logical “High” (VDD voltage level), “L”: CMOS logical “Low” (GND voltage level)
“Z” : High impedance (1 MΩ or more)
DS04–29135–1E
5
MB42M001
6. Amplifier Output Pins
Pin Name
I/O
Description of Pin Function
I/O Equivalent Circuit
Output pins of the sensor conditioner IC.
VDD
1) VOUT_A: output pin for A channel
2) VOUT_B: output pin for B channel
3) VOUT_C: output pin for C channel
VOUT_A,
VOUT_B,
VOUT_C
Analog
output pin
VOUT_x
7. Voltage Monitor/Test Pins
Pin Name
I/O
Description of Pin Function
Voltage monitor pin
I/O Equivalent Circuit
IC internal voltages can be monitored by setting
the AMT register. By backing up the AMT register
setting in flash memory, the voltage can be
output from the VMT pin permanently. For
example, you can output the internal temperature
sensor voltage or internal reference voltage.
Normally
used as an
analog
VDD
output pin
VMT
VMT
Used as an
analog/
digital I/O
pin during
testing
Notes: • The VMT pin has no output drive
capability. Since the voltage may vary
depending on the load resistance,
provide a load of 500 kΩ or more if the
voltage precision is needed.
• Although this pin can be set as a test
input pin by setting the TMR register,
please do not use this function.
Alarm detection output pin
Outputs Low ( = 0 V) when no alarm exists, and
High ( = VDD) during sequence operation or
when an alarm is detected.
• When SD = H, the ALARM output is preset to
“H”.
Normally
used as a
digital
VDD
output pin
ALARM
• An alarm is detected if a CRC error occurs
when writing to flash memory or an error occurs
when transferring data from memory to
registers.
ALARM
Used as an
analog/
digital I/O
pin during
testing
Note : Although this pin can be set as a test input
pin by setting the TMR register, please do
not use this function.
Test pins for flash memory.
Connect to GND or leave open circuit.
TEST_MV, Analog/
TEST_ME, digitalinput
TEST_MN pin
TEST_Mx
Note: There is no package pin that corresponds
to the TEST_MN terminal (TEST_MN is a
pad on the IC chip only).
6
DS04–29135–1E
MB42M001
■ BLOCK DIAGRAM
Note: The TEST_MN terminal can use only wafer (chip) product.
DS04–29135–1E
7
MB42M001
Block Description
• CV-Amp / Drv (capacitance-voltage conversion amplifier)
CV-Amp is an amplifier that converts capacitance changes to a voltage. Drv is a drive circuit used to provide
voltage pulses to capacitance sensor elements. The conversion gain is expresed as V/pF and is defined as
the conversion of the change in capacitance at input pin SINxx to a change in voltage.
(1 V/pF value of 1 indicates that an output of 1 V represents a capacitance change ∆C = 1pF.)
The CVA, COF, and CVM registers specify the detection sensitivity and range adjustments for the CV-Amp.
• Amp1 (Amplifier1)
• Voltage amplifier for the CV-Amp output signal.
• The VGA1 register adjusts the Amp1 gain and the VOF1 register adjusts the offset prior to the Amp1 input.
• Amp2 (Amplifier2)
• A buffer amplifier. (Gain × 2)
• The VOF2 register adjusts the offset after the Amp2 output. The TOF register adjusts the temperature
characteristics of the Amp2 output offset.
• Amp3 (Amplifier3)
• An output amplifier. (Gain × 7)
• The FLT1x and FLT2x pins on the Amp3 input are provided to connect the capacitor for a low pass filter.
• VREG, VBGR, VTMP, VREF (bias circuit)
• VREG outputs the VFA voltage from the internal regulator circuit in the IC.
• VBGR, VTMP, and VREF are reference voltage sources in the IC. The voltages are adjusted by the TREF
and VREF registers.
• Monitor/TEST (Monitor/Test circuit)
• A test circuit used to monitor voltages in the IC.
• The AMT register is used to select and test the voltage to monitor.
• OSC (Internal oscillator circuit)
• An oscillator circuit for the CV-Amp and digital circuits.
• POR (Power-on reset)
• A power-on reset circuit.The internal circuits are reset at power-on or via the SD pin.
• Digital I/F, Test (Serial interface, memory circuit test)
• There include testing of the digital circuits for the serial interface, access circuits for the internal IC
registers and non-volatile memory, and digital circuits.
• E2PROM (Flash Memory)
• Small non-volatile memory. Used to store the adjusted register data.
8
DS04–29135–1E
MB42M001
■ ABSOLUTE MAXIMUM RATINGS
Rating
Typ
Parameter
Symbol
Condition
Unit
Remarks
Min
Max
Power supply voltage
VDD
VDD = VDD_M
− 0.3
⎯
+ 6
V
V
VDD + 0.3
and
5.7 V
Pinsbelongingtothe
PinVDD applied
voltage pin group
VIO5
− 0.3
⎯
Pin voltage
VFA is the voltage
for the internal
regulator in the IC
(approx. 2.5V to 3 V)
VFA + 0.5
and
Pins belonging to
the PinVFA applied
voltage pin group
VIO3
− 0.3
⎯
V
4.0 V
Output current
IIO
⎯
⎯
− 5
⎯
⎯
+ 5
mA
Storage temperature
TST
− 55
+ 125
°C
Operating
temperature
TOP
⎯
− 40
⎯
+ 85
°C
[Pin group: PinVDD]
VOUT_A, VOUT_B, VOUT_C, VMT, ALARM, SD, CS, CLK, DIN, DOUT, TEST_MV, TEST_ME
[Pin group: PinVFA]
VFA, FLT1A. FLT2A. FLT1B, FLT2B, FLT2C, FLT1C/VSRV, VREF, SIN_COM, SIN1A, SIN2A, SIN1B, SIN2B,
SIN1C, SIN2C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Value
Parameter
Symbol
Condition
VDD = VDD_M
Unit
Remarks
Min
Typ
Max
VDD
2.7
3.3
5.5
V
V
Power supply
voltage
VDD_M pin voltage for flash
memory programming
VDDM
4.5
⎯
5
5.5
External serial
interface clock
fCLK
⎯
100
⎯
300
kHz
No. of flash
memory rewrites
VDD = 5.0 V, Ta = + 25°C
⎯
2000 Times
Ta1
Ta2
VDD ≥ 2.7 V
VDD ≥ 2.9 V
− 30
− 40
+ 25
+ 25
+ 85
+ 85
°C
°C
Operating
temperature
Ambient
temperature
Notes: • When data is written to flash memory, pin VDD_M on the IC must be set to 5 V.
• If flash memory programming (Write) is operated when the VDD_M voltage is outside the range
(4.5 V to 5.5 V), the data stored in the flash memory cannot be held for a long time.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
onthedatasheet.Usersconsideringapplicationoutsidethelistedconditionsareadvisedtocontact
their representatives beforehand.
DS04–29135–1E
9
MB42M001
■ ELECTRICAL CHARACTERISTICS
1. Supply Voltage, Reference Voltage
(Unless specified, VDD = VDD_M = 2.7 V to 5.5 V, Ta = + 25°C )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Remarks
VDD = VDD_M = 3 V,
No input signal
Register standard setting
IDD3
⎯
280
⎯
µA
VDD = VDD_M = 3 V,
No input signal
Register 1 channel mode
setting
Power supply
current
IDD31
⎯
220
⎯
µA
*
VDD = VDD_M = 5 V,
No input signal
Register standard setting
IDD5
IDSD3
IDSD5
⎯
⎯
310
⎯
⎯
µA
µA
VDD = VDD_M = 3 V,
No input signal
SD = 3 V
⎯
Power supply
current
shutdown
Does not
include pin leak
current*
VDD = VDD_M = 5 V,
No input signal
SD = 5 V
⎯
⎯
⎯
⎯
⎯
µA
Regulator
output
VFA voltage
VFA
VDD = 3.0 V
2.67
V
Reference
voltage output
VREF voltage
VREF
⎯
⎯
⎯
0.6
0.6
⎯
⎯
V
V
Internal
Register AMT = 05H,
after TREF register
adjusted
temperature
sensor output
voltage
VMT1
⎯
⎯
1.97
⎯
⎯
mV/°C
Register AMT = 06H,
after TREF register
adjusted
VMT voltage
Internal BGR
voltage
VMT2
1.223
V
Register AMT = 07H,
after VREF register
adjusted
Internal
reference
voltage
VMT3
⎯
0.6
⎯
V
* : Standard measurement conditions
• For the register settings, set the bias voltage adjustment in VREF and TREF, set the CV conversion
amplifier adjustment in CVA and COF, and set the other registers to “00”.
• Set the pins or connect to external components as specified in the table below.
Pin Type
Logic input pin
Logic output pin
Pin Name
CS, CLK, DIN, SD
Pin Condition
GND
DOUT
Open
SIN1A, SIN2A, SIN1B, SIN2B,
SIN1C, SIN2C, SIN_COM
Analog input pin
Open or sensor capacitance
Analog output pin
Filter pin 1
VOUT_A, VOUT_B, VOUT_C
FLT1A, FLT1B, FLT1C/VSRV
FLT2A, FLT2B, FLT2C
Open
Open or external capacitor
External capacitor (chip capacitor 1µF)
External capacitor (chip capacitor 1µF or more)
Open
Filter pin 2
Reference voltage output VFA, VREF
Monitor pin
Test pin
VMT, ALARM
TEST_MV, TEST_ME
GND or open
10
DS04–29135–1E
MB42M001
2. Sensor Capacitance Conditions, C-V Conversion Gain Characteristics
[C-V amplifier/C mode operation]
(Unless specified, VDD = VDD_M = 2.7 V to 5.5 V, Ta = + 25°C )
Parameter
Sensor
capacitance
tolerance
Symbol
CSIN
Condition
Min
Typ
Max Unit
Remarks
Capacitance
between package
input pin and
CVA register setting is
N>144
0
⎯
100*
pF
external circuit
Sensor
capacitance
offset tolerance
Difference
COF and VOF registers
adjustment is required
CSOF
− 50*
0
+ 50* pF between pair
capacitances
Detectable
range of sensor
capacitance
changes
Sensitivity adjustments for
each register are required
For a final change
in output of 1 V
CD
0.01*
⎯
20*
pF
C-V conversion
gain
VOUT (final output)
converted value
ACVO
0.05*
⎯
100* V/pF
kHz 1ch mode
C-V conversion
drive frequency
fDRV
⎯
⎯
24
⎯
* : The rated values for sensor capacitance vary depending on the parasitic capacitance and sensitivity
settings.
The detection sensitivity and tolerance vary depending on the sensor element structure, equivalent circuit
of detected capacitance, number of channels, IC settings, and similar.
• Example of Capacitance Sensor Connection
• The tolerance for the detected capacitance and
parasitic capacitance increase or decrease
depending on the sensor element and IC settings.
Sensor elements
SIN_COM
Cs1_C
• An indicative tolerance for a CVA register value of
N is:
Tolerance < (N × 0.625 + 10) pF
SIN1C
SIN2C
Cp_COM
Cp2_C
Cp2_A
Cp2_B
Cp1_C
Cs2_C
Cs1_A
MB42M001
SIN1A
SIN2A
Note: The actual value will vary depending on the
conditions.
Cp1_A
Cp1_B
Cs2_A
Cs1_B
SIN1B
SIN2B
Example: Setting condition: Set CVA register to
N>144
Cs2_B
Parameter
Capacitances
Tolerance
Detected
capacitance
Cs1_*, Cs2_*
< 100 pF
Cp1_*, Cp2_*
Cp_COM
< 100 pF
< 100 pF
Parasitic
capacitance
DS04–29135–1E
11
MB42M001
3. Voltage Amplifier, Output Characteristics
(Unless specified, VDD = VDD_M = 2.7 V to 5.5 V, Ta = + 25°C )
Parameter
Voltage
amplifier gain
adjustment
Symbol
AVGA
Condition
Min
Typ
Max
Unit
Remarks
Based on the register VGA
adjustment of the total gain
for Amp1 to Amp3
14
⎯
112
Times
VOUT_xoutput
offset
adjustment
VOUT_x output voltage
after registers VOF1 and
VOF2 are adjusted
VOF
VTOF
fvout
⎯
⎯
⎯
0
0
⎯
⎯
⎯
mV
*
*
*
VOUT_x output voltage
after register TOF adjusted
(A channel: 255 adjustment
steps)
(B and C channels: 31
adjustment steps)
VOUT_xoutput
offset
temperature
adjustment
mV/
°C
VOUT_xoutput
response
frequency
100
Hz
Internal resistor
approx. 110 kΩ
Filter1 (LPF)
Filter2 (LPF)
fLPF1
fLPT2
CFLT1 = 10 nF
CFLT2 = 15 nF
⎯
⎯
145
96
0
⎯
⎯
⎯
⎯
Hz
Hz
Internal resistor
approx. 110 kΩ
3.6 V < VDD < 5.5 V
∆VOUT < 20mV
⎯
mA
mA
0.4 V < VOUT
VOUT < VDD − 0.4 V
*
VOUT_xoutput
drive capability
IOUTL
2.7 V < VDD < 3.6 V
∆VOUT < 40 mV
⎯
0
VDD −
0.1
VOUT_xoutput
voltage range
VOUTD
IOUT =
0.1 mA
0.1
⎯
V
*
aF
CNZ1
⎯
⎯
4
8
⎯
⎯
rms/ 1 ch operation
Hz
Low-passnoise
input converted
value
Band width frequency <
100 Hz
aF
CNZ23
rms/ 3 ch operation
Hz
* : “VOUT_x” is VOUT_A, VOUT_B, and VOUT_C pins.
12
DS04–29135–1E
MB42M001
4. Digital I/O Block
(Unless specified, VDD = VDD_M = 2.7 V to 5.5 V, Ta = + 25°C )
Parameter
Symbol
VIH
Condition
Min
Typ
Max
Unit Remarks
VDD × 0.7
+ 0.4
⎯
⎯
⎯
V
Input voltage CLK,
DIN, CS, and SD
pins
VDD ×
0.3 − 0.4
VIL
⎯
⎯
⎯
V
IIH
IIL
VDD = 5 V, VIH = 5 V
VDD = 5 V, VIL = 0 V
⎯
⎯
⎯
1.0
µA
µA
Input current SD
pin
− 1.0
⎯
With
µA pull-down
resistor
IIH
VDD = 5V, VIH = 5 V
⎯
⎯
60
Input current CLK,
DIN and CS pins
IIL
VDD = 5 V, VIL = 0 V
IOH = − 1 mA
− 1.0
⎯
⎯
⎯
⎯
µA
Output voltage
DOUTandALARM
pins
VOH
VDD − 0.4
V
VOL
IOL = 1 mA
⎯
⎯
0.4
V
VDD = 5 V, VOH =
VDD − 0.4 V
Output current
DOUTandALARM
pins
IOH
IOL
⎯
1.0
⎯
⎯
⎯
⎯
− 1.0
⎯
mA
mA
µA
VDD = 5 V, VOL = 0.4 V
VDD = 5 V, VIH = 5 V
CS pin = 0 V
IOZH
− 1.0
High-z input
current DOUT pin
VDD = 5 V, VIL = 0 V
CS pin = 0 V
IOZL
1.0
⎯
⎯
µA
5. Flash Memory Block
Parameter Symbol
(VDD = VDD_M = 5.0 V, Ta = + 25°C )
Condition
Min
Typ
Max
Unit Remarks
From issuing an 8-byte data
write
Write time
write time command until the write
operation completes:
fCLK = 300 kHz
⎯
⎯
⎯
63.8
ms
From issuing an 8-byte data
read
read time command until the read
operation completes:
fCLK = 300 kHz
Read time
⎯
217
µs
DS04–29135–1E
13
MB42M001
6. Serial Interface I/O Timing
(Unless specified, VDD = VDD_M = 2.7 V to 5.5 V, Ta = + 25°C )
Parameter
CLK clock frequency
CLK “L” time
Symbol
fCLK
Min
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
300
⎯
Unit
kHz
µs
Remarks
tLow
1.3
1.3
⎯
CLK “H” time
tHigh
⎯
µs
Rising time
tr
0.3
0.3
⎯
µs
CLK, DIN, CS
CLK, DIN, CS
Falling time
tf
⎯
µs
Data setup time
Data hold time
tSU:data
tHD:data
tbus
0.1
0
µs
⎯
µs
Data bus switching time
CS to CLK hold time
Condition setup time
1.0
1.0
1.0
⎯
µs
tHD:CS
tSU:cond
⎯
µs
⎯
µs
tr
tf
tHigh tLow
tHD:CS
tHD:CS
CLK
DIN
tsu:cond
tSU:data tHD:data
tHD:data
tSU:data
DOUT
HiZ
HiZ
tbus
tbus
CS
Since “H” is output from DOUT if the
sequencer inside IC is operating, start
communications only after the output goes
to “L”.
DOUT goes to “L” immediately after setting CS
to High, next, the output goes to “Z” on the
rising edge of the clock.
14
DS04–29135–1E
MB42M001
■ SENSOR CONDITIONER FUNCTION
• The sensor conditioner function sets IC register data to adjust the gains and offsets to correct for the sensor
characteristics and sensor scatter.
• A register name and address are defined for each register and adjustment can be performed by modifying
these register settings via the serial interface.
Refer to the following chapter “■ DESCRIPTION OF THE SERIAL INTERFACE” and “■ HOW to MAKE
SETTINGS” for information about the register settings.
DS04–29135–1E
15
MB42M001
1. Memory Map
This section defines the memory map that represents the continuous address ranges corresponding to the
registers and the flash memory (non-volatile memory).
1) Register area: 00H to 57H
The register area (User area) available to users is 10H to 2FH.
2) Flash memory (non-volatile memory) area: 58H to FFH
• The flash memory area available to users is 70H to B7H.
• The data at addresses 70H to 8FH in flash memory are automatically transferred to addresses 10H to
2FH in the register area at power-on or when a power-on reset occurs.
Address
00H
08H
10H
18H
20H
28H
30H
38H
40H
48H
50H
58H
60H
68H
70H
78H
80H
88H
90H
98H
A0H
A8H
B0H
B8H
C0H
C8H
D0H
D8H
E0H
E8H
F0H
F8H
+0
+1
+2
+3
+4
+5
+6
+7
mode
AMT
CVM
CTL
TREF
VREF
SRV
TGA
CVA (A) CVA (B) CVA (C) COF (A) COF (B) COF (C)
User
MOD VGA1 (A) VGA1 (B) VGA1 (C) VOF1 (A) VOF1 (B) VOF1 (C)
Register
area
LTC
TOF (A) TOF (B) TOF (C) VOF2 (A) VOF2 (B) VOF2 (C)
FMTM
DTM
CTL
TMR
Mainte
CRC
CRC Module
CRC
AMT
CVM
TREF
VREF
SRV
TGA
CVA (A) CVA (B) CVA (C) COF (A) COF (B) COF (C) CRC
MOD VGA1 (A) VGA1 (B) VGA1 (C) VOF1 (A) VOF1 (B) VOF1 (C) CRC
LTC TOF (A) TOF (B) TOF (C) VOF2 (A) VOF2 (B) VOF2 (C) CRC
CRC User
CRC
CRC
Flash
Memory
area
Module
CRC
CRC
CRC Mainte
CRC
CRC
CRC
Note : CRC : CRC (error checking code) data is added for each block of 8 bytes (7 data bytes + 1 CRC byte).
16
DS04–29135–1E
MB42M001
2. Register Name List
Register
Register
Name
Memory
Address
Function
Address*1
10
11
AMT
Various control settings
Selects the signal to monitor from the VMT pin.
70H
71H
CTL
Used to adjust the reference voltage VBGR and the temperature sensor
voltage VTMP at room temperature ( + 25°C).
12
TREF
VREF
72H
13
14
15
16
17
18
19
1A
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
27
28
29
2A
2B
2C
2D
2E
2F
Adjusts the VREF reference voltage in the IC.
Register 14H and memory 74H have no function.
73H
74H
75H
76H
77H
78H
79H
7AH
7BH
7CH
7DH
7EH
7FH
80H
81H
82H
83H
84H
85H
86H
87H
88H
89H
8AH
8BH
8CH
8DH
8EH
8FH
SRV
TGA
Selects the VSRV drive voltage for the CV amplifier.
Temperature dependence gain adjustment
Register 17H has no function. Set a CRC*2 code in memory location 77H.
CVM
CVA
Selects the CV amplifier modes.
Ach Adjusts the CV amplifier conversion gain for A channel.
Bch Adjusts the CV amplifier conversion gain for B channel.
Cch Adjusts the CV amplifier conversion gain for C channel.
Ach Adjusts the sensor input offset for A channel.
Bch Adjusts the sensor input offset for B channel.
Cch Adjusts the sensor input offset for C channel.
Register 1FH has no function. Set a CRC*2 code in memory location 7FH.
MOD function (A channel output monitor)
COF
MOD
Ach Adjusts the Amplifier 1 gain for A channel.
VGA1 Bch Adjusts the Amplifier 1 gain for B channel.
Cch Adjusts the Amplifier 1 gain for C channel.
Ach Adjusts the pre-input offset for Amplifier 1 for the A channel.
VOF1 Bch Adjusts the pre-input offset for Amplifier 1 for the B channel.
Cch Adjusts the pre-input offset for Amplifier 3 for the C channel.
Register 27H has no function. Set a CRC*2 code in memory location 87H.
LTC
Adjusts the linearity for A channel.
Ach Adjusts the temperature dependence characteristic of A channel.
Bch Adjusts the temperature dependence characteristic of B channel.
Cch Adjusts the temperature dependence characteristic of C channel.
Ach Adjusts the pre-input offset for Amplifier 3 for the A channel.
TOF
VOF2 Bch Adjusts the pre-input offset for Amplifier 3 for the B channel.
Cch Adjusts the pre-input offset for Amplifier 3 for the C channel.
Register 2FH has no function. Set a CRC*2 code in memory location 8FH.
54
TMR
Enables writing directly from the serial interface to a register.
None
*1 : Addresses are in hexadecimal.
*2 : CRC: CRC (error checking code) data is added for each block of 8 bytes (7 data bytes + 1 CRC byte).
DS04–29135–1E
17
MB42M001
3. Example Register Setting Order
Using the following sequence to set registers is recommended:
1) Preparation
Initially, set the amplifier gain and offset settings to their default or minimum values.
Normally, adjustment is performed with the sensor zeroed and at a temperature of + 25°C.
2) Set Each Register
To start setting the register data, first set the TMR register.
Note that turning off the power or a power-on reset initialize the register data.
(To invoke a power-on reset, change the SD pin from 0 V → VDD → 0 V.)
Use the serial interface to set the registers as described in the “■ How to Create Setting Data” section.
3) Reference Voltage Circuit Adjustment (Registers: TREF, VREF)
Measure the VMT pin (Voltage Monitor Test) voltage as you adjust the TREF and VREF registers.
The VMT pin can be switched between outputting the VBGR (reference voltage), VREF (reference voltage),
and VTMP (temperature sensor voltage) voltages by changing the AMT register settings. However, the VMT
pin output voltage is offset from the internal voltage being monitored by the offset voltage of the VMT output
buffer amplifier.
First, set the upper 3 bits of the TREF register to adjust the VBGR voltage.
Next, use the VREF register to adjust the VREF voltage and then use the lower 5 bits of the TREF register
to adjust the internal temperature sensor.
4) CV Amplifier Adjustment (Registers: CVA, COF, CVM, SRV)
Adjust the CVA and COF registers.
The IC can be adjusted to support a wide range of sensors by setting the CVM and SRV registers.The
normal settings are CVM = 0 and SRV = 0.
To monitor the adjustment voltage, set the Amplifier 1 and 2 gains to their minimum settings and then set
the AMT register to monitor the FLT pin voltage for each channel from the VMT pin.
First, specify the CV conversion value in the CVA register.As increasing the CV conversion value may
exceed the tolerance range for the input capacitance, set the CVA register based on the tolerance range for
the input capacitance. Next, use the COF register to adjust the SIN1 and SIN2 offset capacitance.
5) Latter Stage Amplifier Adjustment (Registers: VGA, VOF1, VOF2)
Use the VGA register to adjust the Amplifier 1 gain if the gain is insufficient with CVA only (the normal setting
is × 1). Use the VOF1 register to adjust the Amplifier 1 input stage offset. Adjust by using the AMT register
setting to monitor the FLT pin voltage for each channel via the VMT pin.
Use the VOF2 register to adjust the Amplifier 3 input stage offset. Monitor the output pin VOUT voltage while
adjusting.
6) Temperature Dependence Characteristic Adjustment (Register: TOF)
Adjust the TOF register to apply a linear correction to the offset temperature dependence characteristic.
18
DS04–29135–1E
MB42M001
4. Adjustment Function Explanation
The key words used to explain the registers settings are defined as follows:
• Notation for bit settings
The following notation is used in the register explanations.
N (Decimal) ← (B3, B2, B1, B0),
S (Sign bit) ← S
This indicates that the binary bit setting values, B3, B2, B1, and B0, are converted to decimal.
N = 23• B3 + 22• B2 + 21• B1 + 20• B0
When the sign bit S is used, S = 0 indicates positive and S = 1 indicates a negative value.
• <Optional>
<Optional> is used in some register explanations.
This indicates that the <Optional> function can be used but that the characteristics specified in this manual
are not guaranteed.
Use the function for prototypes or testing.
• <Test>
<Test> is used in some register explanations.
This indicates that the <Test> function can be used but that the operation is not guaranteed.
Use the function for testing or similar.
• Do not set addresses or data that is not described in the register explanations.
1) Test Mode Settings
TMR register (Test Mode Register: Permit direct access to registers)
Enables the register to be written directly from the serial interface.
Address: 54H (1 byte access)
Bit setting
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
Normal use status
Register access mode. Writing to 10H to 2FH is enabled.
Notes: • Setting the bits to any value other than that above is prohibited.
• Setting the data at 54H from A0H back to 00H clears register access mode. Immediately after clearing
access mode, a power-on reset is invoked and the current register data is lost.
The data in the flash memory data area (70H to 8FH) is then copied to the register data area (10H
to 2FH).
DS04–29135–1E
19
MB42M001
2) Reference Voltage Circuit Adjustment
VREF (Voltage reference : IC internal reference voltage adjustment)
Address: 13H
Bit setting
Adjusts the VREF reference voltage in the IC.
Monitor the VREF voltage from the VMT pin and adjust to
600 mV (Tj = + 25°C).
The VREF voltage is generated based on the BGR voltage.
7
6
5
4
3
2
1
0
S
B4 B3 B2 B1 B0
• For no correction
:S = 0, N = 0
• For correction to + side :S = 0, correction amount =
about +N × 2.36 mV (N = 1 to 31)
• For correction to - side :S = 1, correction amount =
about -N × 2.36 mV (N = 0 to 31)
• N (Decimal) ← (B4, B3, B2, B1, B0)
• S (Sign bit) ← S
Note : Set the VMT pin to monitor the VREF voltage (see the
“ 9) Monitor Circuit Selection”).
TREF (Voltage temperature reference: BGR voltage and IC internal temperature sensor adjustment
(1) Adjust the internal temperature sensor.
Set the VMT pin to monitor the VTMP voltage and adjust
VREF to (600 mV) (Tj = + 25°C).
Address: 12H
Bit setting
7
6
5
4
3
2
1
0
• For no correction
• For correction to + side :S = 0, correction amount =
about +N × 2.9 mV (N = 1 to 15)
• For correction to - side :S = 1, correction amount =
about -N × 2.9 mV (N = 0 to 15)
:S = 0, N = 0
R2 R1 R0
S
T3 T2 T1 T0
1) VTMP voltage adjustment
• N (Decimal) ← (T3, T2, T1, T0)
• S (Sign bit) ← S
Notes : • Set the VMT pin to monitor the TREF voltage (see
the“ 9) Monitor Circuit Selection”).
2) VBGR voltage adjustment
• Select using the R2, R1, and R0 bits
• The adjustment step amounts might not be equal.
• The VTMP voltage change can be estimated as
∆VTMP = 1.97 mV/∆T + 0.6 µV/∆T2.
(2) Adjust the VBGR reference voltage in the IC.
Set the VMT pin to monitor the VBGR voltage and adjust to
be in the range 1.220 V to (1.223 V) to 1.240 V (Tj = + 25°C).
Note : Set the VMT pin to monitor the BGR voltage (see the
“ 9) Monitor Circuit Selection”).
VBGR Voltage Bit Setting Table
R2
*
R1
0
R0
0
Correction Amount
No correction (Standard)
[Not available] About − 30 mV
Approximately − 15mV
0
0
*
0
1
1
0
1
1
No correction (Standard)
Approximately + 15 mV
Approximately + 30 mV
1
1
0
1
1
0
20
DS04–29135–1E
MB42M001
3) CV Amplifier Adjustment
CVA (CV-amp: Adjusts the CV amplifier capacitance and voltage conversion gain)
(1) Use the CVA register to adjust the CV amplifier CV
(capacitance - voltage) conversion value.
Address:
A channel adjustment
19H
1AH
1BH
B channel adjustment
C channel adjustment
Note : The adjustment step amount might not be equal.
Approximate CV conversion value
= 16 / ( N+16 ) × Vsrv [V/pF] (N = 16 to 255 )
Bit setting:
7
6
5
4
3
2
1
0
• Vsrv is the value specified by the SRV register (the default
value is about 2.65 V).
B7 B6 B5 B4 B3 B2 B1 B0
• The change in CV amplifier output voltage ∆V for a change
in capacitance of ∆C[pF] can be estimated as ∆V = 16 /
(N+16) × Vsrv × ∆C.
N ← (B7, B6, B5, B4, B3, B2, B1, B0)
N is the value in decimal.
• For example, if Vsrv = 2.6 V and CVA = 48, the
approximate value is ∆V [V] = 0.65 [V/pF] × ∆C [pF].
(N:0 to 15 is prohibited)
(2) Ensure that the adjustment does not exceed the
permitted input range of the CV amplifier.
The conversion value setting is restricted by the maximum
total value of all the capacitances connected to CV amplifier
input. Under all conditions, ensure that 0.5 V< CV amplifier
output voltage< 0.8 V.
Since the CV amplifier output voltage cannot be measured
directly, set the Amplifier 1 gain to 1 and set the Amplifier 2
gain to 2, then calculate from the FLTxx pin voltage. The FLT
pin voltage can be monitored from the VMT pin.
Note : The maximum capacitance value = IC internal
capacitance + IC package capacitance + Sensor
connector (wiring) capacitance + Sensor initial
capacitance + Sensor maximum change capacitance
(3) CVA expansion mode
The adjustment amount can be increased by using the A8 bit
in the VGA register.
B8 = A8 bit in the VGA register
N ← (B8, B7, B6, B5, B4, B3, B2, B1, B0)
Conversion value = (16 /(N + 16)) × Vsrv [V/pF] (N = 16 to
511)
(Continued)
DS04–29135–1E
21
MB42M001
(Continued)
COF (CV-amp input offset : CV amplifier input offset capacitance adjustment)
(1) Use the COF register to adjust the CV amplifier input
offset
Address
A channel adjustment
1CH
1DH
1EH
B channel adjustment
C channel adjustment
Note : The adjustment step amount might not be equal.
• For no correction
: S = 0, N = 0
• For correction to + side : S = 0, N = 1 to 127
Correction amount =
Bit setting
About +N × 0.0625 pF
7
6
5
4
3
2
1
0
• For correction to - side : S = 1, N = 1 to 127
Correction amount =
S
B6 B5 B4 B3 B2 B1 B0
About-N × 0.0625 pF
• N (Decimal) ← (B6, B5, B4, B3, B2, B1,
B0)
• S (Sign bit) ← S
(2) CV amplifier output voltage is adjusted in the range
of 500 mV to 599 mV
Since the CV amplifier output voltage cannot be measured
directly, set the Amplifier 1 gain to 1 and set the Amplifier 2
gain to 2, then calculate from the FLT2x pin voltage.
(3) COF expansion mode
The adjustment amount can be increased by using (F9, F8,
F7) in the VGA register.
• The A channel can expand three bits: B9, B8, and B7.
N (Decimal) ← (B9, B8, B7, B6, B5, B4, B3, B2, B1, B0)
• The B channel and C channel can expand one bit: B7.
N (Decimal) ← (B7, B6, B5, B4, B3, B2, B1, B0)
22
DS04–29135–1E
MB42M001
4) CV Amplifier Mode Settings
CVM (CV-amp mode: CV amplifier mode settings)
Address: 18H
Various CV amplifier modes can be specified. Normally, all of B7 to B0 are set to“0”.
(1) CV amplifier operating mode
For selection modes details, see the section describing CV amplifier operation selection.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
CV amplifier operating mode selection
Normal use status.
0
0
0
0
0
0
0
0
Switches to 1 channel mode.
*
*
*
B4
*
*
*
*
For B4 = 0 sets normal mode (3ch operation). If B4 = 1, Ach only is
operated (Bch and Cch are not operated.).
Sets the CV amplifier to normal operating mode “C mode”.
A pair capacitance is connected to SIN1 and SIN2 and the common
pin of the pair is connected to SIN_COM.
*
*
*
*
*
*
*
*
*
*
*
*
0
0
0
1
For the conversion gain setting, see the “3) CV amplifier adjustment”.
<Test> Set the CV amplifier to “S mode”.
[Valid only when 1 channel mode is used] Capacitances are
connected to SIN1 and SIN_COM and SIN2 and SIN_COM
respectively. (SIN2 side can be opened.)
When this mode is specified, the capacitance connected to the SIN1
pin and IC internal capacitance of about 24 pF seem to be in series.
This increases the permitted capacitance value for the SIN1 pin.
Note: The linearity becomes worse. The COF adjustment can only be
adjusted in the negative direction (SIN2 side).
<Test> Sets the CV amplifier to “T mode”.
This detects the change in the capacitance connected between SIN1
and GND.
The SIN2 pin is left open circuit and the VSRV register is set to 0.6 V.
The gain setting is adjusted using the CVA register (N<512).
(Conversion gain = 9.6/(N+16) [V/pF] )
Note: The accuracy deteriorates because the detected capacitance
includes all parasitic capacitances inside and outside the IC.
*
*
*
*
*
*
*
*
*
*
*
*
1
1
0
1
<Test> The CV amplifier is set to “V mode” (Voltage input mode, input
range = 0 V to VFA+0.3 V).
Apply the difference voltage between SIN1 and SIN2, and leave
SIN_COM open circuit.
The gain setting is adjusted using the CVA register (N<512) (Voltage
gain = 512/(N+16) [V/V] ).
*
*
*
*
*
*
*
*
*
B2
*
*
*
*
*
<Test> Setting B2 = 1 turns off the CV amplifier output.
<Test> When B3 = 1, the connection between SIN pin and IC internal
circuit is cut.
B3
(Continued)
DS04–29135–1E
23
MB42M001
(Continued)
CVM (CV-amp mode: CV amplifier mode settings)
(2) Performs a test by varying the CV amplifier drive frequency.
Normally, use B7 = 0, B6 = 0, and B5 = 0.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
Drive Frequency
Drive Frequency: Typ. fDRV = 24 kHz, sampling: fDRV/3 (3ch mode),
fDRV (1ch mode)
0
0
0
*
*
*
*
*
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
<Optional> Drive frequency: fDRV × 0.67
<Optional> Drive frequency: fDRV × 0.33
<Test> Drive frequency: fDRV × 1.3
<Test> Drive frequency: fDRV × 2
<Test> The drive oscillation output is stopped (Ach setting).
<Test> The drive oscillation output is stopped (Bch setting).
<Test> The drive oscillation output is stopped (Cch setting).
24
DS04–29135–1E
MB42M001
5) CV Amplifier Drive Condition Setting
SRV (Sensor drive voltage: CV amplifier drive voltage setting for capacitance detection)
Address: 15H
Selects the setting for the VSRV drive voltage of the CV amplifier.
The CV conversion gain is proportional to the VSRV value. For the VSRV value, either the existing pin
voltage can be used or the mode in which the FLT1C pin function is changed to the VSRV pin function
can be selected.
(1) VSRV voltage selection without using SRV
Selects the drive voltage for the CV amplifier. Either the VFA pin voltage or VREF pin voltage can be
selected for the drive voltage.
Set B3 = 0 and B2 = 0 and use B0 to specify the selection.
7
6
5
4
3
2
1
0
B
7
B
6
B
5
B
4
B
3
B
2
B
1
B
0
FLT1C/ VSRV Pin, VSRV Voltage Value
*
*
*
*
*
*
*
*
0
0
0
0
*
*
0 The FLT1C pin functions as FLT1C. Internal VSRV ≈ VFA
1 The FLT1C pin functions as FLT1C. Internal VSRV ≈ VREF (0.6 V)
(2) [Optional] VSRV voltage value selection when SRV is used (No VDD ratiometric)
When the use of SRV is specified, the FLT1C pin function is switched to the VSRV pin function
automatically.
Connect a capacitor of 1µF to the VSRV pin. (Note: The C channel filter is FLT2C only.)
Set B3 = 1 and B2 = 0 and use B1 and B0 to specify the selection.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
FLT1C/ VSRV Pin, VSRV Voltage Value
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
1
0
0
0
0
0
0
1
1
0
1
0
1
<Optional> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ 0.6V
<Optional> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ 2.04 V
<Optional> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ 0.1 V
<Optional> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ 0.05 V
(3) [Test] VSRV voltage value selection when SRV is used (with VDD ratiometric)
When the use of SRV is specified, the FLT1C pin function is switched to the VSRV pin function
automatically.
Connect a capacitor of 1 µF to the VSRV pin. (Note: The C channel filter is FLT2C only.)
Set B3 = 1 and B2 = 1 and use B1 and B0 to specify the selection.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
FLT1C/ VSRV Pin, VSRV Voltage Value
<Test> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ VDD × 0.06 V
<Test> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ VDD × 0.213 V
<Test> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ VDD × 0.378 V
<Test> The FLT1C pin functions as VSRV (1 µF connection). VSRV ≈ VDD × 0.0095 V
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
Note : When the SRV function is used, the current dissipation might increase by 20 µA (VDD = 3 V) depending
on the settings.
DS04–29135–1E
25
MB42M001
6) Amplifier Gain and Offset Adjustment
VGA1 (Voltage gain control amp1: Gain adjustment for Amplifier 1 and expansion bit for CVA/COF/CVM)
(1)The Amplifier 1 gain is adjusted using the VGA register.
Address
A channel adjustment
21H
22H
23H
B2 B1 B0 N (Decimal) ← (B2, B1, B0)
B channel adjustment
C channel adjustment
(Decimal) ← (B2, B1, B0)
• The gain can be set independently for channels A, B, and C.
N
0
1
2
3
4
5
6
7
Bit setting for A channel
× 0 × 1 1.62 × 2 3.2 × 4 6.2 × 8
7
6
5
4
3
2
1
0
Gain
R
F9 F8 F7 A8 B2 B1 B0
Note : N = 0 is for testing and therefore the Amplifier 1 signal
is not transmitted.
Bit setting for B channel and C channel
(2) Expansion bit in the CVA register
7
6
5
4
3
2
1
0
Corresponds to expansion bit B8 in the CVA
A8
register.
M
F7 A8 B2 B1 B0
→ See the “3) CV amplifier adjustment”.
(3) Expansion bit in the COF register
Corresponds to the expansion bit
F7
in the COF register for the B and
C channels.
• Bit B7 in the COF register only is used for the B channel and
C channel.
→ See the “3) CV amplifier adjustment”.
Corresponds to the expansion bit
F9
F8
F7
in the COF register for the A
channel.
• Corresponds to B9, B8, and B7 in the COF register for A
channel.
→ See the “3) CV amplifier adjustment”.
(4) <Test> CVM register expansion bit
For an operating mode test (not used normally)
M
Sets B and C channels to V mode.
• Normally, M = 0
• When the B channel register is M = 1, the CV amplifier
switches to V mode for B channel only.
• When the C channel register is M = 1, the CV amplifier
switches to V mode for C channel only.
(5)<Test> Average mode (for disturbance noise measures)
For an operating mode test (not used normally)
The FLT pin voltage is averaged (used in 1ch
mode).
R
• Normally, R = 0
• The detection voltage is averaged. The output noise and
output voltage are decreased. (The VOUT output voltage is
increased about 0.3 to 0.5 times normal in 1ch mode.)
(Continued)
26
DS04–29135–1E
MB42M001
(Continued)
VOF1 (Voltage offset control 1: Amplifier 1 input offset adjustment)
Adjusts the offset from the CV amplifier output to
Amplifier 1 input.
Address
A channel adjustment
24H
25H
26H
B channel adjustment
C channel adjustment
• For no correction
: N = 0
• Positive correction only available:
N = 1 to 255
Bit setting
• N (Decimal) ← (B6, B5, B4, B3, B2, B1, B0)
Correction amount = About +N ×
(Amplifier 1 gain) × 2 × 0.64 mV
7
6
5
4
3
2
1
0
Notes : • The correction amount is the value measured from
the FLT2x pin. (FLT2x = FLT2A, FLT2B, FLT2C) For
example, the FLT2x pin voltage is adjusted to be
between 590 mV to 610 mV.
B7 B6 B5 B4 B3 B2 B1 B0
• The AMT register can be set so that the FLT2x pin
can be monitored from the VMT pin.
• The VOF1 adjustment does not allow negative
corrections. Accordingly, first use the COF register
adjustment to set in the range 500 mV to 599 mV.
• The adjustment step amount might not be equal.
VOF2 (Voltage offset control 1: Amplifier 3 input offset adjustment)
Adjusts the offset from Amplifier 2 output to Amplifier 3
input.
Address
A channel adjustment
2CH
2DH
2EH
• For no correction
• For correction to + side : S = 0, N = 1 to 63
Correction amount =
: S = 0, N = 0
B channel adjustment
C channel adjustment
About +N × 5.53 mV
• For correction to - side : S = 1, N = 0 to 63
Correction amount =
Bit setting
7
6
5
4
3
2
1
0
About-N × 5.53 mV
F
S
B5 B4 B3 B2 B1 B0
Notes : • The correction amount is the value measured from
the VOUTx pin.
• N (Decimal) ← (B5, B4, B3, B2, B1, B0)
• S (Sign bit) ← S
• F ← Normally set to “0”. If the MOD function
is used, B7 in the B/C channel register is
used as the sign bit for the MOD
function.For details, see the MOD register
explanation.
For example, the VOUTx pin voltage is adjusted to
VDD × 0.5.
• The adjustment step amount might not be equal.
DS04–29135–1E
27
MB42M001
7) Temperature Dependence Gain Adjustment (Optional function)
TGA (Temperature gain control amp: Temperature dependence gain adjustment)
TGA is not used normally. If it is used, set A <Optional> Adjusts the gain temperature characteristic.
(bit7) to A = 1.
A first order linear temperature gradient is used as the gain
Address
temperature dependence for all channels.
All channels
16H
• When TGA is not used : A = 0, S = *, N = *
• For a positive correction slope :
Bit setting
A = 1, S = 0, N = 1 to 31
7
6
5
4
3
2
1
0
Correction amount =
About +N × 1E-4 [time/°C]
• For a negative correction slope :
A
S
B4 B3 B2 B1 B0
• N (Decimal) ← (B4, B3, B2, B1, B0)
• S (Sign bit) ← S
• A (Available bit) ← A
A = 1, S = 1, N = 1 to 31
Correction amount =
About -N × 1E-4 [time/°C]
Note : • Positive slope: Gain increases at higher
temperatures. The correction amount is the change
in the gain, where the gain at + 25°C is 1.
Example) For S = 0,N = 31
Gain
When the
temperature
increases by
∆50°C, the gain
changes by
+15%.
Av×1.15
Av×1.0
Tempe-
+75C° rature
+25C°
• When the TGA function is used, the current
dissipation might increase by 20 µA (VDD = 3 V)
depending on the settings.
• The adjustment step amount might not be equal.
28
DS04–29135–1E
MB42M001
8) Temperature Dependence Offset Adjustment
TOF (Temperature offset control: Temperature dependence offset adjustment)
Address
A channel adjustment
Adjusts the offset voltage temperature dependence
characteristic.
A first order linear temperature gradient is used for the output
offset.
An 8-bit + sign bit value can be specified for the A channel
and a 5-bit + sign bit value for the B and C channels.
29H
2AH
2BH
B channel adjustment
C channel adjustment
• Bit setting for A channel
29H
• When TOF is not used : A = 0, S = *, N = *
Disables the TOF setting for all
channels.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
• N (Decimal) ← (B7, B6, B5, B4, B3, B2, B1,
B0)
• S (Sign bit) ← SA
<<SA: Bit 7 at address 2AH>>
• For correction to + side : S = 0
• A channel : N = 1 to 255,
Correction amount = About +N × 36 µV/°C
• B/C channel: N = 1 to 31,
Correction amount = About +N × 290 µV/°C
• Bit setting for B channel
2AH
• For correction to - side: S = 1
7
6
5
4
3
2
1
0
• A channel : N = 1 to 255,
Correction amount = About -N × 36 µV/°C
• B/C channel: N = 1 to 31,
SA
A
S
B4 B3 B2 B1 B0
• N (Decimal) ← (B4, B3, B2, B1, B0)
• S (Sign bit) ← S
Correction amount = About -N × 290 µV/°C
Notes: • Positive slope: The offset increases at higher
temperatures.The correction amount is the change
in offset, where the offset at 25°C is 0.
SA
A
A channel sign bit
TOF available bit
• The correction amount is the value measured from
the VOUTx pin.
• Bit setting for C channel
2BH
Example) For Ach, S = 0, and N = 88
7
6
5
4
3
2
1
0
Offset
When the
S
B4 B3 B2 B1 B0
temperature
increases by
∆50°C, the
Vofs+158mV
Vofs+0mV
• N (Decimal) ← (B4, B3, B2, B1, B0)
• S (Sign bit) ← S
offset changes
by +158 mV.
Tempe-
rature
+75C°
+25C°
• When the TOF function is used, the current
dissipation might increase by 20 µA (VDD = 3 V)
depending on the settings.
• The adjustment step amount might not be equal.
DS04–29135–1E
29
MB42M001
9) Monitor Circuit Selection
AMT (Analog Monitor Test: Controls the monitor circuit for testing)
Address: 10H
(1) Selects the signal to monitor from the VMT pin (uses the B2, B1, and B0 bits).
The VMT (voltage monitor) pin can be set to monitor different signals to allow measurement of the voltages
being adjusted.
Since the output is from the internal output buffer, any monitor voltage can be used.
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
Selects the signal to monitor from the VMT pin.
No VMT buffer output.
*
*
*
*
*
*
*
*
*
*
0
0
0
1
<Test> Monitors the CV amplifier output voltage.The
waveform cannot be observed.
0
0
Monitors the temperature reference voltage from the VMT pin.
(Slope of about +2 mV/°C) Monitoring the temperature
reference voltage allows the system to be used as a
temperature sensor.Check the offset deviation in the VMT
output and then adjust the TREF (B4 to B0) register.
*
*
*
*
0
1
0
1
Monitors the BGR voltage (1.223 V) from the VMT pin. Check
the offset deviation in the VMT output and then adjust the
TREF (B7 to B5) register.
*
*
*
*
*
*
*
*
0
0
1
1
1
1
0
1
Monitors the reference voltage VREF pin voltage (600 mV)
from the VMT pin.Check the offset deviation in the VMT
output and then adjust the VREF (B4 to B0) register.
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
0
0
0
0
1
1
1
0
1
<Test> Monitors the FLT2A pin voltage from the VMT pin.
<Test> Monitors the FLT2B pin voltage from the VMT pin.
<Test> Monitors the FLT2C pin voltage from the VMT pin.
<Test> The temperature sensor output is connected to FLT2A
and output to VMT.
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
1
1
1
0
1
1
1
0
1
<Test> The BGR voltage is connected to FLT2B and output
to VMT.
<Test> The VREF voltage is connected to FLT2C and output
to VMT.
(2) <Test> Selects the operation of the VMT pin output buffer amplifier (Uses bit B7, B6, B5, and B4)
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
Buffer amplifier mode selection for the VMT pin
Normal use status
0
0
0
0
*
*
*
*
<Test> Performs a comparison with VREF (0.6 V) and
outputs the comparator output from VMT (High = VFA
voltage).
0
*
*
1
*
*
*
*
<Test> Performs a comparison with VREF (0.6 V) and
outputs the comparator output from VMT while also outputing
a logic value from the ALARM pin (High = VDD).
1
*
*
1
*
*
*
*
<Test> Used to test the VMT output offset (changes to a
differential input transistor for the buffer).
0
0
*
1
*
*
*
*
*
*
*
*
*
*
*
1
<Test> Increases the VMT output drive capability.
(Continued)
30
DS04–29135–1E
MB42M001
(Continued)
AMT (Analog Monitor Test: Controls the monitor circuit for testing)
(3) <Test> ALARM pin monitor signal test (uses bits B7, B6, and B5)
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
Alarm monitor test for ALARM pin
Normal use status. CRC errors and the verification result are
output to the ALARM pin.
0
1
1
0
0
1
0
1
0
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
<Test> Outputs only CRC errors to the ALARM pin.
<Test> Outputs only the verification result to the ALARM pin
during register transfer from the memory.
<Test> Uses a pulse output to the ALARM pin for the
verification result during register transfer from the memory.
1
1
1
*
*
*
*
*
Note: Setting bits not specified in the table is prohibited.
“*” indicates either “0” or “1”.
10) Control settings
CTL (Control register: Various control settings)
Address: 11H
(1) Various functions can be selected (Uses bits B3, B2, B1 and B0 bits).
7
6
5
4
3
2
1
0
B7 B6 B5 B4 B3 B2 B1 B0
0
*
*
*
0
0
0
0
Normal use state
<Test> Selects the gain for amplifier 2.
*
*
*
*
*
*
*
B0 [B0 = 0 is normally used.]
B0 = 0: Gain × 2, B0 = 1: Gain × 4
Reference voltage of amplifier 3 = 0.5 × VDD, VOUT output
range 0<VOUT<VDD
*
*
*
*
*
*
*
*
*
*
0
0
0
1
*
Note : Condition: 2.9 V ≤ VDD Although the same operation
as below is performed, there is a possibility that noise
is improved.
This setting should be used normally.
Reference voltage of amplifier 3 = 0.5 × VDD, VOUT output
range 0<VOUT<VDD
*
Reference voltage of amplifier 3 = Approx. 1.5 V, VOUT output
*
*
*
*
*
*
*
*
*
*
*
*
*
*
1
1
*
0
1
*
*
*
*
range 0 V to 4 V (<VDD)
Reference voltage of amplifier 3 = Approx. 2.5 V, VOUT output
range 0 V to 5V (<VDD)
<Test> Stops the internal oscillator and can be used the clock
from the CLK pin.
B3
<Test> Alarm test for the verify check
Write B7 = 1 to the data at the CTL (Address 71H) memory
area.
The alarm will be set at the next power-on or after a power-on
reset.
B7
*
*
*
*
*
*
*
To cancel the alarm, write B7 = 0 to the memory again.
DS04–29135–1E
31
MB42M001
11) Used to adjust the linearity of the output voltage (Optional function for channel A only)
LTC (Linearity: Channel A output linearity adjustment)
LTC is normally not used.
<Option> Adjusts the linearity of the output voltage of channel A.
Address
A first order linear temperature gradient is used as the gain
temperature dependence for all channels.
• When LTC is not used: Set A1 = 0 and A2 = 0. [Normal state]
• Use the A2, A1 and A0 settings to select the correction curve.
• The adjustment amount can be adjusted in 15 steps using the B3,
B2, B1 and B0 bits.
Channel A
28H
1
Bit setting
7
6
5
4
3
2
0
M
A2 A1 A0 B3 B2 B1 B0
Inclination
characteristics
Inclination
characteristics
A2 A1 A0
A2 A1 A0
• N (Decimal) ← (B3, B2, B1, B0)
• Correction characteristics
selection ← A2, A1 and A0
• M (MOD function ON/OFF bit) ← M
0
0
0
1
0
0
LTC OFF
0
0
0
1
1
1
LTC OFF
Note : See the “12) Channel A output
voltage monitor test (Optional
function for channel A only)”.
RD
RU
Input
Default setting
7
6
5
4
0
3
0
2
0
1
0
0
0
0
0
0
LD
1
1
0
1
0
0
1
1
0
1
1
1
LU
LTC and MOD function are not used.
CU
CD
When using the LTC function, current dissipation may increase by
20 µA (VDD = 3 V) or so, depending on the settings.
Adjustment step amount may not be uniform.
The zero point may shift depending on the register settings.
In this case, adjust the offset again.
• Setting the adjustment amount
Measure the deviation from an ideal straight line at an arbitrary
point and use the B3, B2, B1 and B0 bits to adjust the correction
amount.
For example, when the zero point of the output pin (VOUTx) is 0.5
× VDD and the full scale point is defined in terms of the potential
difference from the zero point, the full-scale voltage is
0.5 × VDD.Also, in terms of the FLT2A pin voltage, it is approx.
0.6V (0.5 × VDD /7).
α
Input
α
Input
32
DS04–29135–1E
MB42M001
12) Channel A output voltage monitor test (Optional function for channel A only)
MOD (Modulation: Channel A output monitor)
The MOD function is not normally used.
<Option> Monitor the output voltage of channel A multiplied
by k.
• ON/OFF setting of the MOD function
Address
The MOD function can multiply the output voltage of channel
A by k and output it from channel B or C.
Channels B and C
28H
• ON/OFF setting of the MOD function
• When the MOD function is not used: M = 0 (Set bit 7 of
the LTC register to “0”)
Bit setting
Only bit7 of the LTC register is used
7
6
5
4
3
2
1
0
• When the MOD function is used: M = 1 (Set bit 7 of the
LTC register to “1”)
M
• M ← Sets the MOD function ON or OFF.
• When the output is adjusted to “+” inclination M = 1, F = 0,
Nx = 1 to 15
• Adjustment amount setting
Address
VOUT_B = VOUT_B + (VOUT_A × NB × Approx. 1%)
VOUT_C = VOUT_C + (VOUT_A × NC × Approx. 1%)
Channels B and C
20H
• When the output is adjusted to “-” inclination M = 1, F = 1,
Nx = 1 to 15
Bit setting
VOUT_B = VOUT_B - (VOUT_A × NB × Approx. 1%)
VOUT_C = VOUT_C - (VOUT_A × NC × Approx. 1%)
7
6
5
4
3
2
1
0
C3 C2 C1 C0 B3 B2 B1 B0
• NB (Decimal) ← (B3, B2, B1 and B0)
• NC (Decimal) ← (C3,C2,C1 and C0)
Notes: • The bit setting should be M = 0 (bit 7 of the LTC
register) as the MOD function is normally not used.
• When using the MOD function, current
• Inclination selection
Address
dissipation may increase by 20 µA (VDD = 3 V) or
so, depending on the settings.
• Note that this covers multiple addresses.
• The adjustment step amount may not be uniform.
Channels B and C 2DH, 2EH
Bit setting
Only bit 7 of the VOF2B and VOF2C
registers are used
7
F
6
5
4
3
2
1
0
• F ← Selects the inclination.
Note : Bits other than B7 are for the VOF2
register.
DS04–29135–1E
33
MB42M001
■ DESCRIPTION OF THE SERIAL INTERFACE
This document defines read and write operations as described below.
• Write : Data is transmitted by an external device and received by this IC.
• Read : Data is transmitted by this IC and received by an external device.
1. Serial interface connection
External devices can access the registers and flash memory inside the IC via the serial interface.
Control the CLK (clock), DIN (data input), DOUT (data out) and CS (chip select) pins and use serial
handshaking to transmit data one byte (8 bits) at a time.
Inside the IC
CMOS input
CMOS input
CLK
DIN
CMOS input
Tri-state
DOUT
CS
CMOS input
3-pin control can be achieved by connecting from the DOUT pin to the DIN pin with a resistor of
approximately 5 kΩ inserted between them.
Note: The SD pin should be set to “L” when using the serial interface.
When in the shutdown state, the DIN, CLK and CS pins should be open or set to the “L” level.
2. Serial interface “Data valid timing”
When writing, latch DIN on the rising edge of CLK.
When reading, read DOUT on the rising edge of CLK.
CLK
DIN
CLK
DOUT
Data
Data
Data
Data
held changed
readable undefined
Write operation
Read operation
34
DS04–29135–1E
MB42M001
3. Serial interface “Starting/terminating communication mode”
• Starting communication
To communicate with the IC, set the CS signal to “H” and then wait for the DOUT output to become “L”.
Communication will start in synchronization with CLK when CLK is input (rising edge) after the DOUT output
goes to “L”.
Disable
communication
Enable
communication
Communication
mode
Ignore data
CLK
DIN
DOUT
L
H
Z
Z
Z
CS
If communication is enabled
If communication is disabled
• When DOUT signal is “H”
DOUT goes to “H” if the sequence circuit inside the IC is operating.
1) If a sequence triggered by a power-on reset is in operation
It takes around 14 ms from the power-on reset to the end of the sequence operation inside the IC.
2) If data was written to flash memory
It takes around 53 ms for the writing of 8 bytes to flash memory to end.
• Terminating communication
To terminate the communication, change the CS signal from “H” to “L”.
On detecting the CS signal changing from H → L, the IC executes the sequence operation specified by the
communication, such as writing to flash memory.
DS04–29135–1E
35
MB42M001
4. Serial interface “Communication format”
• Communication format
The period during which CS is High will be counted as one frame.
Communication during a frame consists of one address byte and one command byte followed by either
eight bytes or one byte of data.
address
command
data0 to data7
CLK
DIN
to
to
to
DOUT
CS
to
• Communication bit string
The basic unit for the address, command and data is one byte. Bytes are transmitted/received starting from
the most significant bit.
The most significant bit in the bit string (MSB) is B7 and the least significant bit (LSB) is B0.
MSB
LSB
B7
B6
B5
B4
B3
B2
B1
B0
Example) When transferring 8 bytes
address
command
data 0
data 1
data 2 to 6
data 7
G H
E F
I
J K L M N O P
S T U V W X Y Z
A B
C D
bit No.
7 6 5 4 3 2 1 0
BFH
C0H
C1H
C2H
to
C7H
C8H
A B C D E F G H
address
I
J K L M N O P
S T U V W X Y Z
• Address:
Set a 1-byte address value that points to an area that can be accessed by the user.
1) Register - User area : 10H to 2FH
2) Register - For test mode (TMR register) : 54H
3) Flash memory - User area : 70H to B7H
• Command
The command value specifies whether the operation is a read or write.
1) To write to a register or flash memory : 80H
2) To read from a register or flash memory : 00H
Note: For normal use, commands other than 80H or 00H must not be set.
Setting commands other than 80H or 00H can result in malfunction or damage to other memory areas.
36
DS04–29135–1E
MB42M001
• Data (data)
Data is transmitted/received in fixed data length per address (8 bytes or 1 byte).
The 8th byte is the CRC code.
Note: A CRC check is only performed for addresses between 60H to A7H and D0H to FFH.
Address values and data lengths that can be specified by the user
Specifiable address values
Data length
Register User area
10H
54H
70H
90H
18H
⎯
20H
⎯
28H
⎯
⎯
⎯
8
1
8
8
Register For test mode
Flash memory user area 1
Flash memory user area 2
78H
98H
80H
A0H
88H
A8H
⎯
B0H
• CRC coding formula
CRC code must be appended every 8 bytes when writing to flash memory.
Each frame has a total of 8 bytes, consisting of 7 bytes of data and 1 byte of CRC code.
• CRC coding formula - Calculated based on the previous 7 bytes of data.
Generating polynomial X8+X2+X+1 (1 0000 0111)
• Alarm function
1) Alarm detection output
The alarm function outputs “CRC error” and “verify error” to the ALARM pin.
The voltage level of the ALARM pin is normally Low but goes High in the event of an error.
2) Alarm detection timing
The alarm function only operates when data is automatically transferred from the memory area to the
register area at power-on or power-on reset.
Alarm detection will not function even when a CRC or verify error is generated while the memory or
register is being accessed from the external serial interface.
Once the alarm output becomes High, it cannot revert to Low level unless the power is turned off and on
again or a power-on reset is performed.
3) CRC
• The CRC code is only checked for addresses marked with “CRC” in the flash memory area on the
memory map (60H to A7H and D0H to FFH).
• The serial interface cannot write to a CRC-capable address in flash memory if the CRC values do not
match.In this case, the write sequence will terminate immediately and the DOUT output will revert to
“L” within 1ms of CS recovery.
Read operations are possible regardless of the CRC values.
• A CRC check is performed when data is automatically transferred from the memory area (CRC-capable
address) to the register area at power-on or power-on reset; and an alarm is output if the calculated
CRC values do not match.
4) Verify
A verify check is performed by comparing the data in memory (transfer source) with the data in the
register (transfer destination) when data is automatically transferred from the memory area to the register
area at power-on or power-on reset; and an alarm is output if these data do not match.
5) If the alarm does not disappear
The alarm will disappear when data “00” is written to all CRC-capable addresses in the flash memory
area (60H to A7H, D0H to FFH).
DS04–29135–1E
37
MB42M001
• Communication example
38
DS04–29135–1E
MB42M001
■ HOW TO CREATE SETTING DATA
1. Example procedure for creating setting data
Use a PC or microcontroller to save data from flash memory to an
external device via the serial interface.
1:Save the data in flash
memory to an external
device
Use the serial interface to set the TMR register to switch to register
access mode (transmit “54H 80H A0H” from the serial interface).
2:Enter the mode in
which each register
can be accessed.
• Set the data in each register from the serial interface.Adjust to
the optimal data by measuring the analog voltage value.
• Use a PC or microcontroller to save the data in the register area
(10H to 2FH) to an external device.
3:Adjust the data in each
register
• Set the same data as the data in the register area (10H to 2FH) to
the user area of the flash memory area (70H to 8FH) from the
serial interface. (It is also possible to only write those addresses
that have been changed)
4:Write data to flash
memory
Note: The VDD_M voltage must be set to 5 V when writing.
• When the IC restarts after completing this procedure, it will
operate with the new setting.
5:Restart
Note: Data is transferred automatically from flash memory (70H to
8FH) to the register area (10H to 2FH) by power-on or power-
on reset.
DS04–29135–1E
39
MB42M001
2. Conditions for accessing setting data
Access condition table: Conditions for accessing the user registers and flash memory
Command
VDD VDD_M Permitted Address Values
Value
Data
Length
Remarks
2.7 V
to
5.5 V
Write
Read
Write
Read
Write
VDD
VDD
10H 18H 20H 28H
Read disabled
⎯
80H
80H
8
Register User
area
2.7 V
to
5.5 V
00H or
54H
⎯
⎯
⎯
⎯
1
A0H only
for data
TMR register
Read disabled
2.7 V
to
5.5 V
2.7 V
to
5.5 V
2.7 V
to
5.5 V
2.7 V
to
5 V
VDD
5 V
70H 78H 80H 88H
70H 78H 80H 88H
⎯
⎯
80H
00H
80H
00H
8
8
8
8
Flash memory
user area 1
Read
Write
Read
90H 98H A0H A8H B0H
90H 98H A0H A8H B0H
Flash memory
user area 2
VDD
5.5 V
(1) Power supply voltages (VDD, VDD_M)
The VDD_M voltage must be set to 5 V when writing to a flash memory area.
The data in flash memory may become corrupted if it is written with a VDD_M voltage of other than 5 V.
Other than when writing to a flash memory area, the power supply voltage is VDD = VDD_M = 2.7 V to 5.5 V.
Note:Flashmemoryshouldpreferablybewrittentoatthepowersupplyvoltageof5.0Vandatroomtemperature.
(2) Address value
Only those address values shown in the access condition table can be specified.
Specifying address values other than those shown in the access condition table can result in malfunction
or damage to other memory areas.
(3) Data length (No. of bytes of data)
Use the data length specified in the access condition table.
Using a data length other than that shown in the access condition table can result in malfunction or damage
to other memory areas.
(4) Command value
Specify a command value permitted by the combination of the address and read/write in the access
condition table.
Specifying a command value other than those shown in the access condition table can result in malfunction
or damage to other memory areas.
(5) Precautions when writing to the flash memory
It is prohibited to set the SD pin to “H” or perform serial interface communications while data is being written
to flash memory.
Operating such as communications during data writing can result in malfunction or damage to other
memory areas.
Note : DOUT goes to “H” from when the data write is started until it is finished.
(6) CRC code
The 8th byte of transmitted or received data is the CRC code.
The serial interface cannot write to CRC-capable addresses in flash memory (60H to A7H, D0H to FFH) if the
CRC values do not match.In this case, the write sequence terminates immediately and the DOUT output
reverts to “L” within 1 ms of CS recovery.
40
DS04–29135–1E
MB42M001
■ POWER-ON AND SHUTDOWN FUNCTIONS
The power supply current is shut down by inputting a digital logic signal (High VDD, Low = 0 V) to the SD pin.
1. Power-on
1) When controlling the SD pin after VDD power-on
• The serial interface input pins (CS, CLK and DIN) must be open circuit or 0 V.
• The power supply voltage must be 2.7 V or higher when switching the SD pin to the normal state
(High→Low).
The IC will malfunction if the SD pin is switched to the normal state (High→Low) at a voltage lower than
2.7 V.
• The SD pin can be switched to shutdown state (High→Low) regardless of the power supply voltage
(Shutdown state when SD = High; Normal state when SD = Low).
2) When using the SD pin shorted to GND
• When the power supply turns on, ensure that the transition time from 2.2 V to 2.7 V is less than 1ms.
The IC may malfunction if it takes longer.
• If the power supply is slow to turn on, control the SD pin separately and switch from High to Low after
the power supply voltage has reached over 2.7 V.
VDD [V]
2.7 V
2.2 V
t
Ton ≤ 1 ms
2. Operation startup wait time
The following describes the process flow and wait times for the analog circuit to come into operation after a
power-on or while recovering from a shutdown.
• Power-on (VDD>2.7 V)
• Recover from shutdown
A power-on reset is invoked at power-on or when recovering
Power-on reset
from shutdown.
After a power-on reset, the adjustment data is copied
Data transfer from flash
automatically from flash memory to the registers. The transfer
memory to the registers
takes approx. 7 ms.
It takes some time for the analog circuit to become stable.This
Wait time for analog circuit
stabilization wait time will vary depending on the LPF filter
operation to stabilize
(capacitance of the FLTxx pin).
Example) If the wait time until the analog circuit becomes
stable is longer than 10ms, then an operation wait
time of 17 ms or longer is required.
DS04–29135–1E
41
MB42M001
3. Operation start wait time for the serial interface
The following describes the process flow and wait times for the analog circuit to come into operation after a
power-on or while recovering from a shutdown.
4. Operation modes specified by the SD pin and serial interface input pins
The “DIN, CLK and CS” pins should be Low or open circuit while in shutdown state (SD = High).
The table below shows the states invoked by the DIN and CS pin logic levels while in shutdown state (SD =
High).
SD DIN CLK CS
Normal state
L
*
*
*
Note: A power-on reset is invoked at power-on.
Shutdown
Normal
operation
H
L
L
L
Note: A power-on reset is invoked after recovering from shutdown.
Current dissipation can be lowered by temporarily halting the
analog circuits while maintaining the register values.
1) Starts in normal operating mode and invokes a power-on reset
when the power is turned on.
2) When switched to power-save mode, set DIN to High beforehand
and then set SD to High to avoid a power-on reset.
3) When recovering from power-save mode, maintain DIN to High
and set SD to Low to avoid a power-on reset.
Power-save
mode
H
H
L
L
Note: The serial interface cannot access registers or memory in
power-save mode.
H
H
L
L
L
H
H
Normal operation
<Test>
Pause clock
H
This termporarily stops the clock in the IC.
Note: The pause function for the IC internal clock can be used to connect multiple MB42M001s and sensor
elements.
42
DS04–29135–1E
MB42M001
■ APPLICATION CIRCUIT EXAMPLE
Connection example for a 3ch capacitive sensor (1)
CFLTx = 10 nF to 100 nF
Sensor-C
24 23 22 21 20 19 18
VOUT_A
VOUT_B
VOUT_C
VDD
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
25
26
17
16
VDD
15
14
13
12
11
10
27
28
29
30
31
32
Sensor-A
Sensor-B
AGND1
VREF
VFA
Package:
BCC-32
CVDD
CVREF
CVFA
SD
GND
VDD
VDD_M
9
1
2
3
4
5
6
7
8
VDD or 5 V
CVREF :1 µF
CVFA :1 µF
CVDD :1 µF
Serial interface
Note : About VDD_M
VDD_M should normally be at the same potential as VDD.
VDD_M should be 5.0V when writing to the non-volatile memory in the IC.
DS04–29135–1E
43
MB42M001
Connection example for a 3ch capacitive sensor (2)
This example shows the operation with a minimum configuration.
1) Use with the VDD and VDD_M power supply pins connected together.This is necessary to set VDD = 5.0
V when writing to the non-volatile memory inside the IC.
2) The serial interface does not need to be connected permanently as it is only used when creating
adjustment data or when writing to non-volatile memory.
3) Although the filter capacitance is determined by factors such as the response frequency and noise
tolerance, it is also possible to use one capacitance for each channel.
4) Although sensors with a pair capacitance are desirable, capacitive sensors with other than a pair
capacitance can be supported, depending on the value of the capacitance. The following diagram shows
an example where a pair capacitance sensor is connected to Ch.A, a single capacitance sensor to Ch.B,
and a single capacitance sensor and capacitor (with fixed capacitance value) to Ch.C.
CFLT2 = 10 nF to 100 nF
Sensor-C
24 23 22 21 20 19 18
VOUT_A
VOUT_B
VOUT_C
VDD
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
25
26
17
16
GND
CVDD
15
14
13
12
11
10
27
28
29
30
31
32
Sensor-A
Sensor-B
VDD
AGND1
VREF
VFA
Package:
BCC-32
CVREF
CVFA
SD
VDD_M
9
1
2
3
4
5
6
7
8
CVREF :1 µF
CVFA :1 µF
CVDD :1 µF
44
DS04–29135–1E
MB42M001
Connection example for a 3ch capacitive sensor (3)
The IC should be designed to guard the area between SIN_COM wiring pattern and sensor connection pin
with the GND pattern and the wiring SIN_COM should be lined as short as possible.
The following diagram shows an indicative wiring pattern. The actual pattern should be based on the
positions of the sensor and IC.
C
FLTx = 10 nF to 100 nF
Sensor-C
Sensor-A
Sensor-B
VOUT_A
VOUT_B
VOUT_C
VDD
24 23 22 21 20 19 18
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
25
17
16
26
27
28
29
30
31
32
VDD
15
14
13
12
11
10
AGND1
Package:
BCC-32
C
VDD
VREF
VFA
SD
C
VREF
C
VFA
GND
VDD
VDD
VDD_M
9
1
2
3
4
5
6
7
8
C
C
C
VREF :1 µF
VFA :1 µF
VDD :1 µF
Serial interface
DS04–29135–1E
45
MB42M001
Connection example for a 1ch capacitive sensor
CFLT2 = 10 nF to 100 nF
20
VOUT_A
VOUT_B
VOUT_C
VDD
24 23 22 21
19 18
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
25
26
17
16
VDD
15
14
13
12
11
10
27
28
29
30
31
32
Sensor-A
AGND1
Package:
BCC-32
CVDD
VREF
VFA
SD
CVREF
CVFA
GND
VDD
5 V
VDD_M
9
1
2
3
4
5
6
7
8
CVREF :1 µF
CVFA :1 µF
CVDD :1 µF
Serial interface
Notes : • If using other than a pair capacitance sensor, leave one of the SINxx pins open circuit.
• Connect CSRV to FLT1C when using the SRV function.
46
DS04–29135–1E
MB42M001
Connection example for a 1ch capacitive sensor
When using the CV amplifier in C mode, the wiring pattern of SIN_COM should preferably be guarded from
SIN1A and SIN2A by the GND pattern.
The following diagram shows an indicative wiring pattern. The actual pattern should be based on the
positions of the sensor and IC.
CFLT2 = 10 nF to 100 nF
20
VOUT_A
VOUT_B
VOUT_C
VDD
24 23 22 21
19 18
SIN1C
SIN2C
AGND2
SIN1A
SIN2A
DGND
SIN1B
SIN2B
25
26
17
16
VDD
15
14
13
12
11
10
27
28
29
30
31
32
Sensor-A
AGND1
VREF
VFA
Package:
BCC-32
CVDD
CVREF
CVFA
SD
GND
VDD_M
9
1
2
3
4
5
6
7
8
CVREF :1 µF
CVFA :1 µF
CVDD :1 µF
DS04–29135–1E
47
MB42M001
• Application example
• Use with sensor elements that output a 3ch static capacitance change
Acceleration sensor, inclination sensor, fall detection, and vibration detection
• Use with sensor elements that output a 1ch static capacitance change
Pressure sensor
• Use with other sensor elements that output a change in static capacitance
Micro-capacitance detection circuit, etc.
• Static capacitance change detection and DC differential amplifier
DC differential amplifier with wide input range
48
DS04–29135–1E
MB42M001
■ PRECAUTIONS FOR USING THIS DEVICE
• Never use settings that exceed the maximum rated conditions, otherwise the LSI may be destroyed.
Also, it is recommended that recommended operating conditions be observed in normal use. Exceeding
recommended operating conditions may adversely affect LSI reliability.
• Inserting the IC backwards or with the incorrect orientation can damage the LSI.
• Mount the IC in the socket (or board) in the correct orientation indicated by the index mark on the IC
package.
Although this device contains an anti-static element to prevent electrostatic breakdown and the circuit
design has improved electrostatic immunity, observe the following precautions when handling the device.
(1) When storing and transporting the device, keep it in a container that has anti-static protection or is made
of conductive material.
(2) Before handling the device, confirm that the work personnel, jigs and tools have been discharged
(grounded). Use a conductive sheet on the workbench.
(3) Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ inserted in series between
body and ground.
(4) Before fitting the device into or removing it from the socket, turn the power supply off.
(5) When handling (such as transporting) a board on which the device is mounted, protect the leads with a
conductive sheet.
• Recommended operating conditions are values within which normal LSI operation is warranted.
Standard electrical characteristics are warranted within the range of recommended operating conditions
and within the listed conditions for each parameter.
Operation outside these ranges may adversely affect LSI reliability.
• Printed circuit board ground lines should be set up with consideration for common impedance.
■ ORDERING INFORMATION
Part number
MB42M001PV
Package
32-pin plastic BCC
(LCC-32P-M08)
DS04–29135–1E
49
MB42M001
■ PACKAGE DIMENSIONS
Lead pitch
0.50 mm
5.00 mm ×× 5.00 mm
Plastic mold
32-pin plastic BCC
Package width ×
package length
Sealing method
Mounting height
0.80 mm MAX
(LCC-32P-M08)
32-pin plastic BCC
(LCC-32P-M08)
ꢁ.20(.165)TYP
0.50(.020)TYP
0.50 0.10
5.00 0.10(.1ꢀ7 .00ꢁ)
0.80(.031)MAX
(Mount height)
(.020 .00ꢁ)
25
17
17
25
ꢁ.20(.165)
TYP
3.00(.118) ꢁ.15(.163)
5.00 0.10
(.1ꢀ7 .00ꢁ)
REF
REF
INDEX AREA
0.50(.020)
TYP
0.50 0.10
(.020 .00ꢁ)
"A"
"B"
"C"
0.075 0.025
(.003 .001)
(Stand off)
1
ꢀ
ꢀ
1
3.00(.118)REF
ꢁ.15(.163)REF
Details of "A" part
Details of "B" part
C0.2(.008)
Details of "C" part
0.05(.002)
0.1ꢁ(.006)
MIN
0.ꢁ0 0.06
(.016 .002)
0.ꢁ5 0.06
(.018 .002)
0.ꢁ5 0.06
(.018 .002)
0.30 0.06
0.ꢁ5 0.06
0.ꢁ5 0.06
(.012 .002)
(.018 .002)
(.018 .002)
©2001-2008 FUJITSU MICROELECTRONICS LIMITED C32060S-c-3-3
SD -
Dimensions in mm (inches)
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
Note: About wafer delivery
Delivery can be arranged depending on the number of wafers purchased and the terms and condition
of purchase.
50
DS04–29135–1E
MB42M001
MEMO
DS04–29135–1E
51
MB42M001
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3347 Fax: +81-3-5322-3387
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
Asia Pacific
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incor-
porating the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or
any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other
right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages
arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-
current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations
of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
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HCMOS Output Clock Oscillator, 1MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 4 PIN
EUROQUARTZ
MB42T28-1.000-2.5/-30+75
HCMOS Output Clock Oscillator, 1MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 4 PIN
EUROQUARTZ
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