MB84VZ128A [FUJITSU]

Memory IC;


型号：	MB84VZ128A
厂家：	FUJITSU
描述：	Memory IC
文件：	总4页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MB84VZ128A

New products

Stacked MCP Mounted with

128M-bit (×16) Page Mode

NOR-type Dual Operation Flash

Memories (2 chips), 16M-bit (×16)

Mobile FCRAM , and

4M-bit (×16) SRAM

MB84VZ128A

This is an MCP with a 256M-bit ROM and 20M-bit RAM.

The combined density, 276M-bit, is the world's largest density for mobile purposes.

The Flash Memory has the Page Mode capable of high-speed read-out at 25ns.

Product Description

terminals grow more sophisticated, so grows the demand for

mobile terminal memory with increased density, low power

Mobile terminal functions have advanced remarkably in

recent years. Beyond the simple call functions, today's users

have their choice of a dizzying array of functions, including

Java applications, music playback and distribution, GPS,

and shoot/transmit/receive functions with digital images.

Some of the mobile terminals now on the market incorporate

almost every function that today's technologies allow them

to perform. These terminals are even being used to store and

browse web contents without the help of personal computers.

And the development of these terminals is expected to be

just as radical in the future as it has been up to now. Motion

image distribution and other applications requiring higher

bit rates and higher-speed processing functions are growing

more commonplace, and newer mobile devices are being

designed to meet the hardware requirements. As mobile

Photo 1 External View

2002 No.2

FIND Vol.20

MB84VZ128A

New products

consumption, high speed, miniaturization, and consolidation of

multiple memory types within single memory package.

FUJITSU has been providing highly advanced stacked MCP

memories optimal for storage of application data. The Flash

Memory has the page access mode, and its page access time

achieves 25ns, effectively tripling the access speeds of today's

conventional products (a conventional 64M-bit flash memory

has a random access time of 70ns). The additional 16M-bit

FCRAM mounted in the package is optimal for the storage of

temporary memory for large application or data rewrites, and

the 4M-bit SRAM can be used as a work memory for Base

Band working consistently. With these advantages, the

MB84VZ128A dramatically improves mobile terminal

performance and is optimal for the newer functions in the

mobiles terminals of the next generation.

(Multi Chip Package) products to meet the market demand.

＿

FUJITSU has now developed the remarkable MB84VZ128A

―

the world's very first stacked MCP mounted with two 128M-bit

page mode NOR-type flash memories, a low-power-

consumption 16M-bit Mobile FCRAM^*1for mobile

applications, and a 4M-bit SRAM as supplemental memory for

mobile terminals. This new package provides an impressive non-

volatile memory domain of 256M-bit the largest MCP density

―

in the world by mounting two 128M-bit NOR-type flash

―

Figure 1 Pin Assignments

（Top view）

Stamped Surface

M18

A18

B18

N.C.

B17

N.C.

B16

L18

N.C.

L17

N.C.

A17

N.C.

A16

N.C.

M17

N.C.

L16

N.C.

M16

N.C.

A15

N.C.

B15

N.C.

L15

N.C.

M15

N.C.

A14

N.C.

B14

N.C.

L14

N.C.

M14

N.C.

M13

C14

D14

E14

N.C.

E13

A21

E12

J14

N.C.

J13

F14

N.C.

F13

G14

N.C.

G13

H14

N.C.

H13

K14

N.C.

K13

N.C.

K12

N.C.

A13

N.C.

B13

N.C.

C13

N.C.

D13

N.C.

L13

N.C.

B12

N.C.

B11

N.C.

B10

N.C.

C12

A15

D12

A12

D11

A22

F12

A16

G12

N.C.

H12

VSS

J12

N.C.

L12

N.C.

A11

C11

A13

E11

A14

F11

N.C. DQ15 DQ7 DQ14 N.C.

G11

DQ6 DQ13 DQ12 DQ5

G10 H10

J10

H11

J11

K11

L11

N.C.

L10

N.C.

A19

D10

A10

F10

C10

E10

K10

CE2r A20

N.C. CE2s DQ4 VCCr N.C.

G9 H9 J9

CEf_2 ACC RESET_1 RY/BY_1 CE1s VCCs DQ3 VCCf_1 DQ11 VCCf_2

RY/BY_2 LB

A18

A17

DQ1

DQ9 DQ10 DQ2 VSS

VSS

DQ0

VSS

DQ8 RESET_2

N.C.

CEf_1 CE1r

N.C. N.C.

N.C.

N.C. N.C..

N.C.

FIND Vol.20

No.2 2002

MB84VZ128A

New products

Product Features

A common assignment for stacked MCPs has been adopted

for signal pin assignments (also compatible with conventional

4-chip MCP).

■ Product Configuration

●

128M-bit NOR-type page read mode dual operation flash

memory (×16) ×2 chips

16M-bit mobile FCRAM (×16)

4M-bit SRAM (×16)

■ Access Time

Page Read Access: 25ns (NOR-type flash memory, 8 Word

●

Page)

●

Random Read Access: 85ns (NOR-type flash memory)

Random Read Access: 85ns (mobile FCRAM)

Random Read Access: 70ns (SRAM)

●

■ Package

Package: FBGA -139 ball

●

(Signal ball, 96; reinforcement ball, 43)

Size: 15mm×11mm×1.4 (t) mm

●

■ Operation Power Supply Voltage: Vcc＝2.7V to 3.1V

Figure 2 Block Diagram

Vccf_1 Vss

A22 to A0

RY/BY_1

DQ15 to

DQ⁰

128M-bit

Page Mode

Flash Memory 1

/CEf_1

/OE

/WE

DQ15 to DQ0

ACC

/RESET_1

Vccf_2 Vss

A22 to

A⁰

RY/BY_2

DQ¹⁵to

DQ⁰

128M-bit

Page Mode

Flash Memory 2

/CEf_2

/RESET_2

Vccr Vss

A19 to

A⁰

DQ¹⁵to

DQ⁰

/CE1r

CE2r

16M-bit

Mobile FCRAM

/UB

/LB

Vccs Vss

A¹⁷to

A⁰

DQ15 to

DQ⁰

/CE1s

CE2s

4M-bit SRAM

2002 No.2

FIND Vol.20

MB84VZ128A

New products

■ Low Power Consumption

Standby Current:

Future Development

●

5μA at maximum (NOR-type flash memory / 1 chip

70μA at maximum (mobile FCRAM),

7μA at maximum (SRAM)

This article has introduced the stacked MCP mounted

with two 128M-bit page mode NOR-type flash memories, a

16M-bit mobile FCRAM, and a 4M-bit SRAM as a memory

solution for the coming generation of mobile devices. As a

total memory solution supplier, FUJITSU will continue to

develop and provide advanced MCP products that will

●

Read-out Operation:

60mA at maximum (NOR-type flash memory at initial

stage of page read)

20mA at maximum (mobile FCRAM)

40mA at maximum (SRAM)

Write/Erase Operation:

35mA at maximum (NOR-type flash memory)

Number of Erase/Write Times:

100 thousand times (NOR-type flash memory)

match the evermore demanding needs of the market.

✱

●

NOTES

1: Mobile FCRAM: A large density, low-power pseudo SRAM

which consists of an FCRAM core with an asynchronous

SRAM interface.

2: FBGA (Fine-pitch Ball Grid Array): A type of surface-mounting

＿

Fig. 1 shows the pin assignments, Fig. 2 the block diagram,

and Fig. 3 the package external dimension diagram.

package.

FCRAM (Fast Cycle RAM) is a registered trademark of FUJITSU

＿

LIMITED.

Figure 3 Package External Dimension Diagram

139－φ0.40^＋^－0⁰^.^.⁰¹⁰⁵

0.08

S AB

11.00±0.10

0.20 S B

＋0.15

^{1.25 －0.1}（⁰SEATED HEIGHT）

0.4

REF

0.8

REF

0.8

REF

15.00±0.10

0.4

REF

0.10（.004）S

M L

K J H G F E D C B A

0.10±0.05

INDEX-MARK AREA

（STAND OFF）

0.20

FBGA-139，BGA-139P-M01

0.08

FIND Vol.20

No.2 2002

MB84VZ128A [FUJITSU]

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