MB85R256HPFTN-G-BNDAE1 [FUJITSU]
Memory Circuit, 32KX8, CMOS, PDSO28, 11.80 X 8 MM, 1.20 MM HEIGHT, 0.55 MM PITCH, PLASTIC, TSOP1-28;
| 型号： | MB85R256HPFTN-G-BNDAE1 |
| 厂家： | 
FUJITSU |
| 描述： | Memory Circuit, 32KX8, CMOS, PDSO28, 11.80 X 8 MM, 1.20 MM HEIGHT, 0.55 MM PITCH, PLASTIC, TSOP1-28 光电二极管 内存集成电路 |
| 文件： | 总16页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJITSU MICROELECTRONICS
DATA SHEET
DS05-13106-4Ea
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit,
significantly outperforming Flash memory and E2PROM in durability.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration: 32,768 words x 8 bits
• High endurance 10 Billion Read/writes (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range
• Data retention
: −40 °C to +85 °C
: 10 years (+70 °C)
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
Copyright©2006-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2008.3
MB85R256H
■ PIN ASSIGNMENTS
(TOP VIEW)
A
14
12
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A
2
WE
A
7
6
5
4
3
2
1
0
0
1
2
3
A
A
A
A
13
22
23
24
25
26
27
28
1
2
3
4
5
21
20
19
18
17
16
15
14
13
12
11
10
9
A10
CE
OE
A
4
8
A11
A9
I/O
I/O
I/O
I/O
I/O
7
A
A
5
9
A8
6
5
4
3
6
11
A13
WE
A
7
OE
V
CC
A
8
A10
A14
GND
A12
I/O
I/O
I/O
2
1
0
A
9
CE
A
A
A
A
A
7
6
5
4
3
A
10
11
12
13
14
I/O
I/O
I/O
I/O
I/O
7
A0
A1
A2
I/O
I/O
I/O
6
5
4
3
6
7
8
GND
(FPT-28P-M17)
(FPT-28P-M03)
22
23
24
25
26
27
28
1
2
3
4
5
21
20
19
18
17
16
15
14
13
12
11
10
9
A10
CE
OE
A11
A9
I/O
I/O
I/O
I/O
I/O
7
A8
6
5
4
3
A13
WE
V
CC
A
A
14
12
GND
I/O
I/O
I/O
2
1
0
A
A
A
A
A
7
6
5
4
3
A0
A1
A2
6
7
8
(FPT-28P-M19)
2
MB85R256H
■ PIN FUNCTIONAL DESCRIPTIONS
Pin no.
Pin name
A0 to A14
I/O0 to I/O7
CE
Functional description
Address input
1 to 10, 21, 23 to 26
11 to 13, 15 to 19
Data input/output
Chip enable input
Write Enable input
Output enable input
Power supply ( + 3.3 V Typ)
Ground
20
27
22
28
14
WE
OE
VCC
GND
3
MB85R256H
■ BLOCK DIAGRAM
A
A
14 to A10
Block decoder
A
14 to A0
7
to A0
Row
decoder
FRAM array:
32,768 x 8
Address
latch
CE
A
8, A9
Column decoder
WE
OE
Control logic
I/O latch bus
driver
I/O7 to I/O0
■ FUNCTION LIST
Operation mode
I/O7 to I/O0
Power supply current
CE
H
×
WE
×
OE
×
Standby
(ISB)
Standby precharge
L
L
High-Z
×
H
H
Latch address
Write
L
⎯
⎯
L
L
H
L
Data input
Data output
Operation (ICC)
Read
L
H
H: High level, L: Low level, × : Irrespective of “H” or “L”
4
MB85R256H
■ ABSOLUTE MAXIMUM RANGES
Rating
Parameter
Symbol
Unit
Min
Max
Power supply voltage
Input voltage
VCC
VIN
− 0.5
− 0.5
− 0.5
− 40
− 40
+ 4.0
VCC + 0.5
VCC + 0.5
+ 85
V
V
Output voltage
VOUT
TA
V
Operating temperature
Storage temperature
°C
°C
Tstg
+ 125
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Value
Parameter
Symbol
Unit
Min
2.7
Typ
3.3
⎯
Max
3.6
Power supply voltage
High level input voltage
Low level input voltage
Operating temperature
VCC
VIH
VIL
TA
V
V
0.8 × VCC
− 0.5
VCC + 0.5
+ 0.6
⎯
V
− 40
⎯
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
representatives beforehand.
5
MB85R256H
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Value
Unit
Parameter
Symbol
Conditions
Min
Typ
Max
Input leakage current
| ILI |
VIN = 0 V to VCC
⎯
⎯
10
µA
µA
Output leakage
current
VOUT = 0 V to VCC,
CE = VIH or OE = VIH
| ILO |
⎯
⎯
10
CE = 0.2 V,
Other inputs = VCC − 0.2 V/0.2 V,
tRC (Min), Ii/o = 0 mA
Operating power
supply current
ICC
⎯
5
10
mA
Standby current
ISB
CE, WE, OE ≥ VCC
⎯
5
50
µA
High level output
voltage
VOH
IOH = − 2.0 mA
0.8 × VCC
⎯
⎯
V
Low level output
voltage
VOL
IOL = 2.0 mA
⎯
⎯
0.4
V
2. AC Characteristics
(1) Read cycle
(within recommended operating conditions)
Value
Parameter
Symbol
Unit
Min
Max
⎯
Read cycle time
tRC
tCA
tRP
tPC
tAS
tAH
tCE
tOE
tHZ
tOHZ
150
70
70
80
0
CE active time
2000
2000
⎯
Read pulse width
Precharge time
Address setup time
Address hold time
CE access time
⎯
ns
25
⎯
⎯
⎯
⎯
⎯
70
OE access time
70
CE output floating time
OE output floating time
25
25
6
MB85R256H
(2) Write cycle
(within recommended operating conditions)
Value
Parameter
Symbol
Unit
Min
Max
⎯
Write cycle time
CE active time
Write pulse width
Precharge time
tWC
tCA
tWP
tPC
tAS
tAH
tDS
tDH
tWS
tWH
150
70
70
80
0
2000
2000
⎯
Address setup time
Address hold time
Data setup time
Data hold time
⎯
ns
25
50
0
⎯
⎯
⎯
Write set up time
Write hold time
0
⎯
0
⎯
(3) Power ON/OFF sequence
Parameter
(within recommended operating conditions)
Value
Symbol
Unit
Min
80
Typ
⎯
Max
⎯
CE level hold time at power OFF
CE level hold time at power ON
tpd
tpu
ns
ns
80
⎯
⎯
3. Pin Capacitance
Value
Typ
⎯
Parameter
Symbol
Conditions
Unit
Min
⎯
Max
Input capacitance
Output capacitance
CIN
10
10
pF
pF
VIN = VOUT = GND,
f = 1 MHz, TA = + 25 °C
COUT
⎯
⎯
4. AC Characteristics Test Condition
Power supply voltage : 2.7 V to 3.6 V
Input voltage amplitude : 0.3 V to 2.7 V
Input rising time
: 10 ns
Input falling time
Input evaluation level
: 10 ns
: 2.0 V/0.8 V
Output evaluation level : 2.0 V/0.8 V
Output load : 100 pF
7
MB85R256H
■ TIMING DIAGRAM
1. Read cycle (CE Control)
t
RC
tPC
t
PC
tCA
CE
tAH
t
AH
t
AS
t
AS
Valid
Valid
A
14 to A
0
t
RC
tPC
t
PC
tRP
OE
tOE
t
OHZ
High-Z
High-Z
Valid
Valid
I/O7
to I/O
0
t
HZ
t
CE
WE
“H” level
: Don't care.
2. Read cycle (OE Control)
t
RC
tPC
t
PC
tCA
CE
tAH
tAH
tAS
t
AS
A
14 to A
0
Valid
Valid
t
RC
t
PC
t
PC
tRP
OE
tOE
t
OHZ
High-Z
High-Z
Valid
I/O7
to I/O
0
Valid
t
HZ
t
CE
WE
“H” level
: Don't care.
8
MB85R256H
3. Write cycle (CE Control)
t
WC
t
t
PC
t
PC
tCA
CE
t
AS
tAH
t
AS
t
AH
Valid
Valid
A14 to A0
t
WC
t
PC
PC
t
WH
t
WS
t
WH
tWS
t
WP
WE
t
DS
tDS
tDH
tDH
Valid
Valid
Data In
OE
“H” level
: Don't care.
4. Write cycle (WE Control)
t
WC
t
t
PC
t
PC
tCA
CE
t
AS
t
AH
t
AS
t
AH
Valid
Valid
A14 to A0
t
WC
t
PC
PC
t
WH
tWS
t
WH
tWS
t
WP
WE
t
DS
tDS
t
DH
tDH
Valid
Valid
Data In
OE
“H” level
: Don't care.
9
MB85R256H
■ POWER ON/OFF SEQUENCE
tpd
tpu
VCC
VCC
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
*
*
CE > VCC × 0.8
CE : Don't care
CE > VCC × 0.8
CE
CE
* : CE (Max) < VCC + 0.5 V
■ NOTES ON USE
After IR reflow, the hold of data that was written before IR reflow is not guaranteed.
■ ORDERING INFORMATION
Part number
Package
Remarks
28-pin plastic SOP
(FPT-28P-M17)
MB85R256HPF-G-BNDAE1
28-pin plastic TSOP(1)
(FPT-28P-M03)
MB85R256HPFTN-G-BNDAE1
MB85R256HPFCN-G-BNDAE1
Fe Lead Frame
Cu Lead Frame
28-pin plastic TSOP(1)
(FPT-28P-M19)
10
MB85R256H
■ PACKAGE DIMENSIONS
28-pin plastic SOP
Lead pitch
1.27 mm
8.6 × 17.75 mm
Gullwing
Package width
package length
×
Lead shape
Sealing method
Mounting height
Weight
Plastic mold
2.80 mm MAX
0.82 g
Code
(Reference)
P-SOP28-8.6×17.75-1.27
(FPT-28P-M17)
28-pin plastic SOP
(FPT-28P-M17)
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
*117.75 +–00..2205 .699 –+..000180
0.17 +–00..0043
.007 +–..000021
28
15
11.80 0.30
(.465 .012)
*28.60 0.20
(.339 .008)
INDEX
Details of "A" part
2.65 0.15
(.104 .006)
(Mounting height)
0.25(.010)
1
14
"A"
0~8˚
1.27(.050)
0.47 0.08
(.019 .003)
M
0.13(.005)
0.80 0.20
(.031 .008)
0.20 0.15
(.008 .006)
(Stand off)
0.88 0.15
(.035 .006)
0.10(.004)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
C
2002 FUJITSU LIMITED F28048S-c-3-4
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
(Continued)
11
MB85R256H
28-pin plastic TSOP (I)
Lead pitch
Lead shape
0.55 mm
Gullwing
Sealing method
Mounting height
Weight
Plastic mold
1.20 mm Max
0.25 g
Code
(Reference)
P-TSOP(1)28-11.8×8-0.55
(FPT-28P-M03)
28-pin plastic TSOP (I)
(FPT-28P-M03)
22
21
Details of "A" part
0.15(.006)
MAX
INDEX
28
"A"
1
LEAD No.
0.35(.014)
MAX
0.15(.006)
0.25(.010)
7
8
13.40 0.20
(.528 .008)
8.00 0.20
(.315 .008)
11.80 0.20
(.465 .008)
7.15(.281)REF
1.10 +Ð00..1005
.043 +Ð..000042
0.15 0.05
(.006 .002)
(Mounting height)
0(0)MIN
(STAND OFF)
0.55(.0217)
TYP
0.10(.004)
12.40 0.20
(.488 .008)
0.50 0.10
(.020 .004)
0.20 0.10
(.008 .004)
M
0.09(.004)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
C
1997-2008 FUJITSU LIMITED F28018S-5C-4
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
(Continued)
12
MB85R256H
(Continued)
28-pin plastic TSOP (1)
Lead pitch
0.55 mm
11.80 × 8.00 mm
Gullwing
Package width
package length
×
Lead shape
Sealing method
Mounting height
Weight
Plastic mold
1.20 mm Max
Approx. 0.25 g
P-TSOP(1)28-11.8×8-0.55
Code
(Reference)
(FPT-28P-M19)
28-pin plastic TSOP (1)
(FPT-28P-M19)
22
21
INDEX
28
1
LEAD No.
7
8
0.15 0.05
(.006 .002)
0.00(.000) Min
(Stand off)
13.40 0.20
8.00 0.20
(.528 .008)
11.80 0.20
(.465 .008)
(.315 .008)
1.10 +0.10
(Mounting height)
–
0.05 .043 +.004
–.002
0.55(.0217)
TYP
0.10(.004)
7.15(.281)
REF
0.20 0.10
(.008 .004)
12.40 0.20
(.488 .008)
0.50 0.10
(.020 .004)
M
0.09(.004)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
C
2005 FUJITSU LIMITED F28062S-c-3-3
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
13
MB85R256H
MEMO
14
MB85R256H
MEMO
15
MB85R256H
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
Tokyo 163-0722, Japan
Tel: +81-3-5322-3347 Fax: +81-3-5322-3387
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
Asia Pacific
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Tel: +1-408-737-5600 Fax: +1-408-737-5999
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Singapore 556741
Tel: +65-6281-0770 Fax: +65-6281-0220
http://www.fujitsu.com/sg/services/micro/semiconductor/
Europe
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Tsimshatsui, Kowloon
Korea
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206 KOSMO TOWER, 1002 Daechi-Dong,
Kangnam-Gu,Seoul 135-280
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Hong Kong
Tel: +852-2377-0226 Fax: +852-2376-3269
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The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporat-
ing the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
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Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
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Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
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