MB85RC64TAPNF-G-BDE1 [FUJITSU]

64 K (8 K × 8) Bit I2C;
MB85RC64TAPNF-G-BDE1
型号: MB85RC64TAPNF-G-BDE1
厂家: FUJITSU    FUJITSU
描述:

64 K (8 K × 8) Bit I2C

光电二极管 内存集成电路
文件: 总28页 (文件大小:200K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS501-00044-2v0-E  
Memory FRAM  
64 K (8 K × 8) Bit I2C  
MB85RC64TA  
DESCRIPTION  
The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192  
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the  
nonvolatile memory cells.  
Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery.  
The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be  
at least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number.  
The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash  
memory or E2PROM.  
FEATURES  
• Bit configuration  
: 8,192 words × 8 bits  
• Two-wire serial interface  
• Operating frequency  
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).  
: 3.4 MHz (Max @HIGH SPEED MODE)  
1 MHz (Max @FAST MODE PLUS)  
• Read/write endurance  
• Data retention  
: 1013 times / byte  
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)  
• Operating power supply voltage : 1.8 V to 3.6 V  
• Low power consumption : Operating power supply current 170 μA (Typ @3.4 MHz)  
Standby current 8 μA (Typ)  
Sleep current 4 μA (Typ)  
• Operation ambient temperature range : 40 °C to + 85 °C  
• Package  
: 8-pin plastic SOP (FPT-8P-M09)  
8-pin plastic SON (LCC-8P-M04)  
RoHS compliant  
Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED  
2016.10  
MB85RC64TA  
PIN ASSIGNMENT  
(TOP VIEW)  
(TOP VIEW)  
1
8
VDD  
WP  
A0  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
2
3
4
A1  
A2  
7
6
5
SCL  
SDA  
A2  
SCL  
SDA  
VSS  
VSS  
(FPT-8P-M09)  
(LCC-8P-M04)  
PIN FUNCTIONAL DESCRIPTIONS  
Pin  
Pin Name  
Number  
Functional Description  
Device Address pins  
The MB85RC64TA can be connected to the same data bus up to 8 devices.  
Device addresses are used in order to identify each of these devices. Connect  
these pins to VDD pin or VSS pin externally. Only if the combination of VDD and  
VSS pins matches a Device Address Code inputted from the SDA pin, the  
device operates. In the open pin state, A0, A1 and A2 pins are internally pulled-  
down and recognized as the “L” level.  
1 to 3  
A0 to A2  
4
5
VSS  
SDA  
Ground pin  
Serial Data I/O pin  
This is an I/O pin which performs bidirectional communication for both memory  
address and writing/reading data. It is possible to connect multiple devices. It is  
an open drain output, so a pull-up resistor is required to be connected to the ex-  
ternal circuit.  
Serial Clock pin  
6
SCL  
This is a clock input pin for input/output serial data. Data is sampled on the ris-  
ing edge of the clock and output on the falling edge.  
Write Protect pin  
When the Write Protect pin is the “H” level, the writing operation is disabled.  
When the Write Protect pin is the “L” level, the entire memory region can be  
overwritten. The reading operation is always enabled regardless of the Write  
Protect pin input level. The Write Protect pin is internally pulled down to VSS  
pin, and that is recognized as the “L” level (write enabled) when the pin is the  
open state.  
7
8
WP  
VDD  
Supply Voltage pin  
2
DS501-00044-2v0-E  
MB85RC64TA  
BLOCK DIAGRAM  
Serial/Parallel Converter  
SDA  
FRAM Array  
8,192 × 8  
SCL  
WP  
Column Decoder/Sense Amp/  
Write Amp  
A0, A1, A2  
I2C (Inter-Integrated Circuit)  
The MB85RC64TA has the two-wire serial interface; the I2C bus, and operates as a slave device.  
The I2C bus defines communication roles of “master” and “slave” devices, with the master side holding the  
authority to initiate control. Furthermore, an I2C bus connection is possible where a single master device is  
connected to multiple slave devices in a party-line configuration. In this case, it is necessary to assign a  
unique device address to the slave device, the master side starts communication after specifying the slave  
to communicate by addresses.  
I2C Interface System Configuration Example  
VDD  
Pull-up  
Resistors  
SCL  
SDA  
I2C Bus  
MB85RC64TA  
I2C Bus  
MB85RC64TA  
I2C Bus  
MB85RC64TA  
I2C Bus  
Master  
...  
A2 A1 A0  
A2 A1 A0  
A2 A1 A0  
0
0
0
0
0
1
0
1
0
Device address  
DS501-00044-2v0-E  
3
MB85RC64TA  
I2C COMMUNICATION PROTOCOL  
The I2C bus is a two wire serial interface that uses a bidirectional data bus (SDA) and serial clock (SCL). A  
data transfer can only be initiated by the master, which will also provide the serial clock for synchronization.  
The SDA signal should change while the SCL is the “L” level. However, as an exception, when starting and  
stopping communication sequence, the SDA is allowed to change while the SCL is the “H” level.  
• Start Condition  
To start read or write operations by the I2C bus, change the SDA input from the “H” level to the “L” level while  
the SCL input is in the “H” level.  
• Stop Condition  
To stop the I2C bus communication, change the SDA input from the “L” level to the “H” level while the SCL  
input is in the “H” level. In the reading operation, inputting the stop condition finishes reading and enters the  
standby state. In the writing operation, inputting the stop condition finishes inputting the rewrite data and  
enters the standby state.  
Start Condition, Stop Condition  
SCL  
SDA  
“H” or “L”  
Start  
Stop  
Note : At the write operation, the FRAM device does not need the programming wait time (tWC) after issuing the  
Stop Condition.  
4
DS501-00044-2v0-E  
MB85RC64TA  
ACKNOWLEDGE (ACK)  
In the I2C bus, serial data including address or memory information is sent in units of 8 bits. The acknowledge  
signal indicates that every 8 bits of the data is successfully sent and received. The receiver side usually  
outputs the “L” level every time on the 9th SCL clock after each 8 bits are successfully transmitted and  
received. On the transmitter side, the bus is temporarily released to Hi-Z every time on this 9th clock to allow  
the acknowledge signal to be received and checked. During this Hi-Z-released period, the receiver side pulls  
the SDA line down to indicate the “L” level that the previous 8 bits communication is successfully received.  
In case the slave side receives Stop condition before sending or receiving the ACK “L” level, the slave side  
stops the operation and enters to the standby state. On the other hand, the slave side releases the bus state  
after sending or receiving the NACK “H” level. The master side generates Stop condition or Start condition  
in this released bus state.  
Acknowledge timing overview diagram  
1
2
3
8
9
SCL  
SDA  
ACK  
The transmitter side should always release SDA on the  
9th bit. At this time, the receiver side outputs a pull-down if  
the previous 8 bits data are received correctly (ACK re-  
sponse).  
Start  
DS501-00044-2v0-E  
5
MB85RC64TA  
DEVICE ADDRESS WORD (Slave address)  
Following the start condition, the master sends the 8 bits device address word to start I2C communication.  
The device address word (8 bits) consists of a device Type code (4 bits), device address code (3 bits), and  
a read/write code (1 bit).  
• Device Type Code (4 bits)  
The upper 4 bits of the device address word are a device type code that identifies the device type, and are  
fixed at “1010” for the MB85RC64TA.  
• Device Address Code (3 bits)  
Following the device type code, the 3 bits of the device address code are input in order of A2, A1 and A0.  
The device address code identifies one device from up to eight devices connected to the bus.  
Each MB85RC64TA is given a unique 3 bits code on the device address pin (external hardware pin A2, A1  
and A0). The slave only responds if the received device address code is equal to this unique 3 bits code.  
• Read/Write Code (1 bit)  
The 8th bit of the device address word is the R/W (read/write) code. When the R/W code is “0”, a write  
operation is enabled, and the R/W code is “1”, a read operation is enabled for the MB85RC64TA.  
It turns to a stand-by state if the device code is not “1010” or device address code does not equal to pins  
A2, A1 and A0.  
Device Address Word  
2
Start  
1
2
3
4
5
6
7
8
9
1
..  
..  
SCL  
SDA  
ACK  
A
1
0
1
0
R/W  
S
A2 A1 A0  
Device Code Device Address Code Read/Write Code  
Access from master  
Access from slave  
S
A
Start Condition  
ACK (SDA is the "L" level)  
6
DS501-00044-2v0-E  
MB85RC64TA  
DATA STRUCTURE  
In the I2C bus, the acknowledge “L” level is output on the 9th bit by a slave, after the 8 bits of the device  
address word following the start condition are input by a master. After confirming the acknowledge response  
by the master, the master outputs 8 bits × 2 memory address to the slave. When the each memory address  
input ends, the slave again outputs the acknowledge “L” level. After this operation, the I/O data follows in  
units of 8 bits, with the acknowledge “L” level output after every 8 bits.  
It is determined by the R/W code whether the data line is driven by the master or the slave. However, the  
clock line shall be driven by the master. For a write operation, the slave will accept 8 bits from the master,  
then send an acknowledge. If the master detects the acknowledge, the master will transfer the next 8 bits.  
For a read operation, the slave will place 8 bits on the data line, then wait for an acknowledge from the master.  
FRAM ACKNOWLEDGE -- POLLING NOT REQUIRED  
The MB85RC64TA performs write operations at the same speed as read operations, so any waiting time for  
an ACK polling* does not occur. The write cycle takes no additional time.  
*: In E2PROM, the Acknowledge Polling is performed as a progress check whether rewriting is executed or not.  
It is normal to judge by the 9th bit of Acknowledge whether rewriting is performed or not after inputting the  
start condition and then the device address word (8 bits) during rewriting.  
WRITE PROTECT (WP)  
The entire memory array can be write protected using the Write Protect pin. When the Write Protect pin is  
set to the “H” level, the entire memory array will be write protected. When the Write Protect pin is the “L”  
level, entire memory array will be rewritten. Reading is allowed regardless of the WP pin's “H” level or “L” level.  
Note : The Write Protect pin is pulled down internally to VSS pin, therefore if the Write Protect pin is open, the  
pin status is detected as the “L” level (write enabled).  
DS501-00044-2v0-E  
7
MB85RC64TA  
COMMAND  
• Byte Write  
If the device address word (R/W “0” input) is sent following the start condition, the slave responds with an  
ACK. After this ACK, write addresses and data are sent in the same way, and the write ends by generating  
a stop condition at the end.  
Address  
High 8bits  
Address  
Low 8bits  
Write  
Data 8bits  
1
0 1 0 A2 A1 A0 0 A  
A
A
A P  
S
0 0 0 X X X X X  
X X X X X X X X  
Access from master  
Access from slave  
MSB  
LSB  
S
P
Start Condition  
Stop Condition  
A ACK (SDA is the "L" level)  
Note : In the MB85RC64TA, input “000” as the upper 3 bits of the MSB.  
• Page Write  
If additional 8 bits are continuously sent after the same command (except stop condition) as Byte Write, a  
page write is performed. The memory address rolls over to first memory address (0000H) at the end of the  
address. Therefore, if more than 8 Kbytes are sent, the data is overwritten in order starting from the start of  
the memory address that was written first. Because FRAM performs the high-speed write operations, the  
data will be written to FRAM right after the ACK response finished.  
Address  
High 8bits  
Address  
Low 8bits  
Write  
Data 8bits  
Write  
Data  
...  
1
0 1 0 A2 A1 A0 0 A  
A
A
A
A
P
S
Access from master  
Access from slave  
S
P
Start Condition  
Stop Condition  
A ACK (SDA is the "L" level)  
Note : It is not necessary to take a period for internal write operation cycles from the buffer to the memory after  
the stop condition is generated.  
8
DS501-00044-2v0-E  
MB85RC64TA  
• Current Address Read  
When the previous write or read operation finishes successfully up to the stop condition and assumes the  
last accessed address is “n”, then the address at “n+1” is read by sending the following command unless  
turning the power off. If the memory address is last address, the address counter will roll over to 0000H. The  
current address in memory address buffer is undefined immediately after the power is turned on.  
Access from master  
Access from slave  
S
Start Condition  
Stop Condition  
(n+1) address  
Read  
Data 8bits  
P
A
N
1
0 1 0 A2 A1 A0 1 A  
N P  
S
ACK(SDA is the "L" level)  
NACK (SDA is the "H" level)  
• Random Read  
The one byte of data from the memory address saved in the memory address buffer can be read out  
synchronously to SCL by specifying the address in the same way as for a write, and then issuing another  
start condition and sending the Device Address Word (R/W “1” input).  
The final NACK is issued by the receiver that receives the data. In this case, this bit is issued by the master  
side.  
Address  
High 8bits  
Address  
Low 8bits  
Read  
Data 8bits  
1
0
1
0 A2 A1 A0 0  
A
A
A
1
0
1
0 A2 A1 A0 1  
A
N P  
S
S
Access from master  
Access from slave  
S
P
A
Start Condition  
Stop Condition  
ACK (SDA is the "L" level)  
N NACK (SDA is the "H" level)  
DS501-00044-2v0-E  
9
MB85RC64TA  
• Sequential Read  
Data can be received continuously following the Device address word (R/W “1” input) after specifying the  
address in the same way as for Random Read. If the read reaches the end of address, the internal read  
address automatically rolls over to first memory address 0000H and keeps reading.  
Read  
Data  
Read  
Data 8bits  
Read  
Data 8bits  
...  
...  
A
A
A
N
P
Access from master  
Access from slave  
Stop Condition  
P
A
N
ACK (SDA is the "L" level)  
NACK (SDA is the "H" level)  
10  
DS501-00044-2v0-E  
MB85RC64TA  
• High Speed Mode  
MB85RC64TA supports High Speed mode up to 3.4 MHz. By sending an entry command (0000 1XXX) after  
start condition from the master side, it informs to the slave that the data transmission with High Speed mode  
will start.  
Since there is no slave side which is allowed to respond to this entry command, NACK response continues  
from the slave side. After the master side recognizes this NACK response, the master side changes its state  
to High Speed mode and enables the bidirectional communication up to 3.4 MHz.  
By sending Stop condition, it exits out of the state in High Speed communication.  
Byte Write @High Speed Mode  
Address  
High 8bits  
Address  
Low 8bits  
Write  
Data 8bits  
1
0
1
1
0 A2 A1A0 0  
0 A2 A1 A0 0  
A
A
A
A
A
A
A
P
S
0 0 0 0 1 X X X N  
S
Page Write @High Speed Mode  
Address  
High 8bits  
Address  
Low 8bits  
Write  
Data 8bits  
Write  
Data  
A
S
0
0
0
0
1
X
X
X
N
...  
1
0
A
A
S
P
Current Address Read @High Speed Mode  
Read  
Data 8bits  
1
0
1
0 A2 A1 A0 1  
N P  
S
0 0 0 0 1 X X X N S  
Random Address Read @High Speed Mode  
Address  
High 8bits  
Address  
Low 8bits  
Read  
Data 8bits  
S
0
0
0
0
1
X
X
X
N
S
1
0
1
0 A2 A1A0 0  
A
A
A
A
A
S
1
1
0
0
1
1
0 A2 A1 A0 1  
0 A2 A1 A0 1  
A
A
N
A
P
Sequential Read @High Speed Mode  
Address  
High 8bits  
Address  
Low 8bits  
Read  
Data 8bits  
...  
S
0
0
0
0
1
X
X
X
N
S
1 0 1 0 A2 A1A0 0 A  
S
Read  
Data  
Read  
Data 8bits  
Read  
Data 8bits  
...  
...  
A
A
A
N
P
Access from master  
Access from slave  
Standard Mode  
Fast Mode  
High Speed Mode  
Fast Mode Plus  
S
Start Condition  
Stop Condition  
P
A
N
A
N
ACK(SDA is the Llevel)  
NACK(SDA is the Hlevel)  
DS501-00044-2v0-E  
11  
MB85RC64TA  
• Sleep Mode  
MB85RC64TA provides Sleep mode which reduces less current consumption than Standby mode, by stoop-  
ing the internal regulator circuits. Following sequences enable the Sleep mode transition.  
<Transition to Sleep mode>  
a) The master sends start condition followed by F8H.  
b) After ACK response from slave, the master sends the device address word.  
In this device address word, Read/Write code are Don't care.  
c) After ACK response from slave, the master re-sends the start condition followed by 86H.  
d) The slave moves to Sleep mode after ACK response to the master.  
S 1 1 1 1 1  
0
0
0
1 0 1 0 A2 A1 A0 R/W A S 1 0 0 0 0 1 1 0 A P  
A
Access from master  
Access from slave  
Start Condition  
S
P
A
Stop Condition  
ACK(SDA is the Llevel)  
EveniftheMB85RC64TAstaysintheSleepmode,SDAandSCLsignalsaremonitored.Followingsequences  
enable the transition to Standby mode after recovery time (tREC) of internal regulator circuits.  
<Exit from Sleep mode>  
a) The master sends start condition followed by device address word.  
In this device address word, Read/Write code are Don't care.  
b) At the rising edge of 9th clock from start condition, an internal regulator starts to operate its recovery  
sequence.  
c) After the recovery time (tREC) passed, standby mode enabled.  
After returning to Standby mode, reading and writing are enabled by sending each command starts with start  
condition.  
Recovery  
operation  
1 0 1 0 A2 A1 A0 R/W  
X
1 0 1 0 A2 A1 A0 R/W A ͐  
S
S
Access from master  
Access from slave  
Start recovery operation  
Start Condition  
S
ACK(SDA is the Llevel)  
A
12  
DS501-00044-2v0-E  
MB85RC64TA  
• Device ID  
The Device ID command reads fixed Device ID. The size of Device ID is 3 bytes and consists of manufacturer  
ID and product ID. The Device ID is read-only and can be read out by following sequences.  
a) The master sends the Reserved Slave ID F8H after the START condition.  
b) The master sends the device address word after the ACK response from the slave.  
In this device address word, R/W code are “Don't care”.  
c) The master re-sends the START condition followed by the Reserved Slave ID F9H after the ACK response  
from the slave.  
d) The master read out the Device ID succeedingly in order of Data Byte 1st / 2nd / 3rd after the ACK  
response from the slave.  
e) The master responds the NACK (SDA is the “H” level) after reading 3 bytes of the Device ID.  
In case the master respond the ACK after reading 3 bytes of the Device ID, the master re-reading the  
Device ID from the 1st byte.  
Reserved  
Slave ID  
(F8H)  
Reserved  
Slave ID  
(F9H)  
R
/
Data Byte  
1st  
Data Byte  
Data Byte  
3rd  
A2A1A0  
S
A 1 0 1 0  
A S  
A
A
A
N P  
W
2nd  
Access from master  
Access from slave  
Start Condition  
S
P
A
N
Stop Condition  
ACK (SDA is the "L" level)  
NACK (SDA is the "H" level)  
Data Byte 1st  
Manufacture ID = 00AH  
Data Byte 2nd  
Data Byte 3rd  
Product ID = 358H  
11 10  
9
8
7
6
5
4
3
2
0
1
1
0
0
11 10  
Density = 3H  
9
8
7
6
5
4
3
2
1
0
0
0
Fujitsu Semiconductor  
Proprietary use  
0
0
0
0
0
0
0
0
1
0
0
1
1
0
1
0
1
1
0
DS501-00044-2v0-E  
13  
MB85RC64TA  
SOFTWARE RESET SEQUENCE OR COMMAND RETRY  
In case the malfunction has occurred after power on, the master side stopped the I2C communication during  
processing, or unexpected malfunction has occurred, execute the following (1) software recovery sequence  
just before each command, or (2) retry command just after failure of each command.  
(1) Software Reset Sequence  
Since the slave side may be outputting “L” level, do not force to drive “H” level, when the master side drives  
the SDA port. This is for preventing a bus conflict. The additional hardware is not necessary for this software  
reset sequence.  
9 set of “Start Conditions and one “1” data”  
SCL  
SDA  
Hi-Z state by pull up Resistor  
Send “Start Condition and one data “1””.  
Repeat these 9 times just before Write or Read command.  
(2) Command Retry  
Command retry is useful to recover from failure response during I2C communication.  
14  
DS501-00044-2v0-E  
MB85RC64TA  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Parameter  
Symbol  
Unit  
Min  
Max  
+ 4.0  
Power supply voltage*  
Input voltage*  
VDD  
VIN  
0.5  
0.5  
0.5  
40  
55  
V
VDD + 0.5 ( 4.0)  
VDD + 0.5 ( 4.0)  
+ 85  
V
Output voltage*  
VOUT  
TA  
V
Operation ambient temperature  
Storage temperature  
°C  
°C  
Tstg  
+ 125  
*: These parameters are based on the condition that VSS is 0 V.  
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,  
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.  
RECOMMENDED OPERATING CONDITIONS  
Value  
Parameter  
Symbol  
Unit  
Min  
1.8  
Typ  
3.3  
Max  
3.6  
Power supply voltage*1  
VDD  
TA  
V
Operation ambient temperature*2  
40  
+ 85  
°C  
*1: These parameters are based on the condition that VSS is 0 V.  
*2: Ambient temperature when only this device is working. Please consider it to be the almost same as the  
package surface temperature.  
WARNING: The recommended operating conditions are required in order to ensure the normal operation of  
the semiconductor device. All of the device's electrical characteristics are warranted when the  
device is operated within these ranges.  
Always use semiconductor devices within their recommended operating condition ranges.  
Operation outside these ranges may adversely affect reliability and could result in device failure.  
No warranty is made with respect to uses, operating conditions, or combinations not represented  
onthedatasheet.Usersconsideringapplicationoutsidethelistedconditionsareadvisedtocontact  
their representatives beforehand.  
DS501-00044-2v0-E  
15  
MB85RC64TA  
ELECTRICAL CHARACTERISTICS  
1. DC Characteristics  
(within recommended operating conditions)  
Value  
Unit  
Parameter  
Symbol  
Condition  
Min  
Typ  
Max  
1
Input leakage current*1  
Output leakage current*2  
|ILI|  
VIN = 0 V to VDD  
VOUT = 0 V to VDD  
SCL = 0.1 MHz  
SCL = 1 MHz  
μA  
μA  
μA  
μA  
μA  
|ILO|  
1
35  
Operating power supply  
current  
IDD  
80  
100  
190  
SCL = 3.4 MHz  
170  
SCL, SDA = VDD  
A0, A1, A2, WP = 0 V or  
VDD or Open  
Under Stop Condition  
Standby current  
Sleep current  
ISB  
8
10  
μA  
SCL, SDA = VDD  
A0, A1, A2, WP = 0 V  
IZZ  
4
6
μA  
“H” level input voltage  
“L” level input voltage  
“L” level output voltage  
VIH  
VIL  
VDD = 1.8 V to 3.6 V  
VDD = 1.8 V to 3.6 V  
IOL = 3 mA  
VDD × 0.7  
VDD  
VDD × 0.3  
0.4  
V
V
VSS  
50  
1
VOL  
V
VIN = VIL (Max)  
VIN = VIH (Min)  
kΩ  
MΩ  
Input resistance for  
WP, A0, A1 and A2 pins  
RIN  
*1: Applicable pin: SCL,SDA  
*2: Applicable pin: SDA  
16  
DS501-00044-2v0-E  
MB85RC64TA  
2. AC Characteristics  
Value  
FAST MODE  
STANDARD  
MODE  
HIGH SPEED  
MODE  
Parameter  
Symbol  
FAST MODE  
Unit  
PLUS  
Min  
0
Max  
100  
Min  
0
Max  
Min  
Max  
1000  
Min  
0
Max  
3400 kHz  
SCL clock frequency  
Clock high time  
FSCL  
THIGH  
TLOW  
400  
0
260*1  
500*2  
4000  
4700  
600  
1300  
60  
80  
80  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Clock low time  
160  
SCL/SDA rising time  
SCL/SDA falling time  
Start condition hold  
Start condition setup  
SDA input hold  
Tr  
1000  
300  
300  
300  
300  
120  
Tf  
THD:STA  
TSU:STA  
THD:DAT  
TSU:DAT  
TDH:DAT  
TSU:STO  
4000  
4700  
0
600  
600  
0
250  
250  
0
160  
160  
0
SDA input setup  
250  
0
100  
0
50  
15*4  
SDA output hold  
0
0
Stop condition setup  
4000  
600  
250  
160  
SDA output access af-  
ter SCL falling  
TAA  
3000  
900  
450*3  
130  
ns  
ns  
Pre-charge time  
TBUF  
4700  
1300  
500  
300  
Noise suppression  
time  
(SCL and SDA)  
TSP  
50  
50  
50  
5
ns  
*1: 300 ns @VDD 2.7 V  
*2: 600 ns @VDD 2.7 V  
*3: 550 ns @VDD 2.7 V  
*4: 20 ns @VDD 2.7 V  
AC characteristics were measured under the following measurement conditions.  
Power supply voltage : 1.8 V to 3.6 V  
Operation ambient temperature : 40 °C to + 85 °C  
Input voltage magnitude  
Input rising time  
: Vss to VDD  
: 5 ns  
Input falling time  
: 5 ns  
Input judge level  
: VDD/2  
: VDD/2  
: 100 pF  
Output judge level  
Output load capacitance  
DS501-00044-2v0-E  
17  
MB85RC64TA  
3. AC Timing Definitions  
TSU:DAT  
THD:DAT  
VIH  
VIH  
VIL  
VIH  
VIL  
VIH  
VIL  
VIH  
VIL  
SCL  
Stop  
Start  
VIL  
VIH  
VIH  
VIL  
VIH  
VIL  
VIH  
VIL  
SDA  
VIL  
TSU:STA THD:STA  
TSU:STO  
Tr  
Tf  
THIGH  
TLOW  
VIH  
VIL  
VIH  
VIL  
VIH  
VIH  
VIL  
SCL  
SDA  
Stop  
Start  
VIL  
VIH  
VIH  
VIH  
VIL  
VIH  
VIL  
VIL  
VIL  
TBUF  
Tr  
TAA  
Tf  
TDH:DAT  
Tsp  
VIH  
SCL  
SDA  
VIL  
VIL  
VIH  
VIL  
VIH  
VIL  
Valid  
VIL  
1/FSCL  
4. Pin Capacitance  
Parameter  
Value  
Typ  
Symbol  
Conditions  
Unit  
Min  
Max  
8
I/O capacitance  
CI/O  
CIN  
pF  
pF  
VDD = 3.3 V,  
f = 1 MHz, TA = + 25 °C  
Input capacitance  
8
5. AC Test Load Circuit  
3.3 V  
1.1 k  
Ω
Output  
100 pF  
18  
DS501-00044-2v0-E  
MB85RC64TA  
POWER ON/OFF SEQUENCE  
tf  
tpd  
tr  
tpu  
VDD  
VDD  
VDD (Min)  
VIH (Min)  
VDD (Min)  
VIH (Min)  
VIL (Max)  
VIL (Max)  
0 V  
0 V  
*
*
SDA, SCL > VDD × 0.8  
SDA, SCL : Don't care  
SDA, SCL > VDD × 0.8  
SDA, SCL  
SDA, SCL  
* : SDA, SCL (Max) < VDD + 0.5 V  
Value  
Parameter  
Symbol  
Unit  
Min  
85  
Max  
SDA, SCL level hold time during power down  
SDA, SCL level hold time during power up  
Power supply rising time  
tpd  
tpu  
tr  
ns  
μs  
250  
0.05  
0.1  
ms/V  
ms/V  
μs  
Power supply falling time  
tf  
Internal regulator recovery time  
tREC  
400  
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off  
sequence, memory data can not be guaranteed.  
FRAM CHARACTERISTICS  
Item  
Min  
1013  
10  
Max  
Unit  
Parameter  
Read/Write Endurance*1  
Times/byte Operation Ambient Temperature TA = + 85 °C  
Operation Ambient Temperature TA = + 85 °C  
Data Retention*2  
95  
Years  
Operation Ambient Temperature TA = + 55 °C  
Operation Ambient Temperature TA = + 35 °C  
200  
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates  
with destructive readout mechanism.  
*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values  
are calculated by qualification results.  
DS501-00044-2v0-E  
19  
MB85RC64TA  
NOTE ON USE  
• We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.  
• During the access period from the start condition to the stop condition, keep the level of WP, A0, A1 and  
A2 pins to the “H” level or the “L” level.  
ESD AND LATCH-UP  
Test  
DUT  
Value  
ESD HBM (Human Body Model)  
JESD22-A114 compliant  
|2000 V|  
ESD MM (Machine Model)  
JESD22-A115 compliant  
|200 V|  
|1000 V|  
ESD CDM (Charged Device Model)  
JESD22-C101 compliant  
Latch-Up (I-test)  
JESD78 compliant  
MB85RC64TAPNF-G-BDE1  
Latch-Up (Vsupply overvoltage test)  
JESD78 compliant  
Latch-Up (Current Method)  
Proprietary method  
Latch-Up (C-V Method)  
Proprietary method  
|200 V|  
• Current method of Latch-Up Resistance Test  
Protection Resistance  
A
VDD  
I
IN  
Test terminal  
VDD  
(Max.Rating)  
DUT  
VSS  
+
-
VIN  
V
Reference  
terminal  
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow. Confirm the  
latch up does not occur under IIN = 300 mA.  
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be  
increased to the level that meets the specific requirement.  
20  
DS501-00044-2v0-E  
MB85RC64TA  
• C-V method of Latch-Up Resistance Test  
Protection Resistance  
A
Test  
terminal  
VDD  
1
2
VDD  
(Max.Rating)  
SW  
C
DUT  
+
V
IN  
V
200pF  
-
VSS  
Reference  
terminal  
Note Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is  
considered as one cycle.  
Repeat this process 5 times. However, if the latch-up condition occurs before completing 5 times, this  
test must be stopped immediately.  
REFLOW CONDITIONS AND FLOOR LIFE  
[ JEDEC MSL ] : Moisture Sensitivity Level 3 (ISP/JEDEC J-STD-020D)  
CURRENT STATUS ON CONTAINED RESTRICTED SUBSTANCES  
This product complies with the regulations of REACH Regulations, EU RoHS Directive and China RoHS.  
DS501-00044-2v0-E  
21  
MB85RC64TA  
ORDERING INFORMATION  
Minimum shipping  
quantity  
Part number  
Package  
Shipping form  
Tube  
8-pin, plastic SOP  
(FPT-8P-M09)  
MB85RC64TAPNF-G-BDE1  
MB85RC64TAPNF-G-BDERE1  
MB85RC64TAPN-G-AMEWE1  
*  
8-pin, plastic SOP  
(FPT-8P-M09)  
Embossed Carrier tape  
Embossed Carrier tape  
1500  
1500  
8-pin, plastic SON  
(LCC-8P-M04)  
*: Please contact our sales office about minimum shipping quantity.  
22  
DS501-00044-2v0-E  
MB85RC64TA  
PACKAGE DIMENSION  
1.27 mm  
3.9 mm× 4.89 mm  
Gullwing  
8-pin plastic SOP  
Lead pitch  
Package width ×  
package length  
Lead shape  
Sealing method  
Mounting heigth  
Weight  
Plastic mold  
1.73 mm MAX  
0.08 g  
(FPT-8P-M09)  
8-pin plastic SOP  
FPT-8P-M09㸧  
Note 1) *1: These dimensions do not include resin protrution.  
Note 2) *2: These dimensions do not include resin protrution.  
8pin  
5pin  
0.12MAX  
F”  
4×R0.05  
1pin  
4pin  
0.42  
+0.063  
-0.064  
1.27(Typ)  
5.30MAX  
4.804.98*1  
0.4060.889  
Details of Fpart  
C
2015 FUJITSU SEMICONDUCTOR LIMITED F08-17Sc  
Dimenssions in mm  
(Continued)  
DS501-00044-2v0-E  
23  
MB85RC64TA  
(Continued)  
8-pin plastic SON  
Lead pitch  
0.5 mm  
2.0 mm × 3.0 mm  
Plastic mold  
0.75 mm MAX  
0.015g  
Package width ×  
package length  
Sealing method  
Mounting height  
Weight  
(LCC-8P-M04)  
8-pin plastic SON  
(LCC-8P-M04)  
2.00  
(.079  
±
±
0.07  
.003)  
1.6  
(.063  
±
±
0.10  
.004)  
0.40±  
0.07  
(.016  
±
.003)  
3.00  
±
0.07  
.003)  
1.40  
±
0.10  
.004)  
(.118  
±
(.055  
±
INDEX AREA  
1PIN CORNER  
(C0.30(C.012))  
0.50(.020)  
TYP  
0.25  
±
0.05  
.002)  
(.010  
±
0.70±0.05  
(.028±.002  
)
0.15(.006)  
0.05(.002) MAX  
Dimensions in mm (inches).  
Note: The values in parentheses are reference values.  
C
2011 FUJITSU SEMICONDUCTOR LIMITED HMbC8-04Sc-1-1  
24  
DS501-00044-2v0-E  
MB85RC64TA  
MARKING  
[MB85RC64TAPNF-G-BDE1]  
[MB85RC64TAPNF-G-BDERE1]  
C 6 4 TA  
1 1 5 4 7  
7 0 1  
[FPT-8P-M09]  
[MB85RC64TAPN-G-AMEWE1]  
Y Y WW  
C64 TA  
0XX  
[LCC-8P-M04]  
DS501-00044-2v0-E  
25  
MB85RC64TA  
MAJOR CHANGES IN THIS EDITION  
A change on a page is indicated by a vertical line drawn on the left side of that page.  
Page  
Section  
Change Results  
Added Data retention under 85 °C.  
Added Data retention under 85 °C.  
FEATURES  
FRAM CHARACTERISTICS  
1
19  
26  
DS501-00044-2v0-E  
MB85RC64TA  
MEMO  
DS501-00044-2v0-E  
27  
MB85RC64TA  
FUJITSU SEMICONDUCTOR LIMITED  
Shin-Yokohama Chuo Building, 2-100-45 Shin-Yokohama,  
Kohoku-ku, Yokohama, Kanagawa 222-0033, Japan  
http://jp.fujitsu.com/fsl/en/  
All Rights Reserved.  
FUJITSU SEMICONDUCTOR LIMITED, its subsidiaries and affiliates (collectively, "FUJITSU SEMICONDUCTOR") reserves  
the right to make changes to the information contained in this document without notice. Please contact your FUJITSU  
SEMICONDUCTOR sales representatives before order of FUJITSU SEMICONDUCTOR device.  
Information contained in this document, such as descriptions of function and application circuit examples is presented solely for  
reference to examples of operations and uses of FUJITSU SEMICONDUCTOR device. FUJITSU SEMICONDUCTOR disclaims  
any and all warranties of any kind, whether express or implied, related to such information, including, without limitation, quality,  
accuracy, performance, proper operation of the device or non-infringement. If you develop equipment or product incorporating the  
FUJITSU SEMICONDUCTOR device based on such information, you must assume any responsibility or liability arising out of or  
in connection with such information or any use thereof. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any  
damages whatsoever arising out of or in connection with such information or any use thereof.  
Nothing contained in this document shall be construed as granting or conferring any right under any patents, copyrights, or any other  
intellectual property rights of FUJITSU SEMICONDUCTOR or any third party by license or otherwise, express or implied.  
FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any infringement of any intellectual property rights or other  
rights of third parties resulting from or in connection with the information contained herein or use thereof.  
The products described in this document are designed, developed and manufactured as contemplated for general use including  
without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and  
manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high levels of safety is secured,  
could lead directly to death, personal injury, severe physical damage or other loss (including, without limitation, use in nuclear  
facility, aircraft flight control system, air traffic control system, mass transport control system, medical life support system and  
military application), or (2) for use requiring extremely high level of reliability (including, without limitation, submersible repeater  
and artificial satellite). FUJITSU SEMICONDUCTOR shall not be liable for you and/or any third party for any claims or damages  
arising out of or in connection with above-mentioned uses of the products.  
Any semiconductor devices fail or malfunction with some probability. You are responsible for providing adequate designs and  
safeguards against injury, damage or loss from such failures or malfunctions, by incorporating safety design measures into your  
facility, equipments and products such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal  
operating conditions.  
The products and technical information described in this document are subject to the Foreign Exchange and Foreign Trade Control  
Law of Japan, and may be subject to export or import laws or regulations in U.S. or other countries. You are responsible for ensuring  
compliance with such laws and regulations relating to export or re-export of the products and technical information described herein.  
All company names, brand names and trademarks herein are property of their respective owners.  
Edited: System Memory Business Division  

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