MB88152 概述
Spread Spectrum Clock Generator 扩频时钟发生器
MB88152 数据手册
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PDF下载FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-29117-1E
Spread Spectrum Clock Generator
MB88152
■ DESCRIPTION
MB88152 is a clock generator for EMI reduction. The peak of unnecessary radiation noise (EMI) can be attenuated
by making the oscillation frequency slightly modulate periodically with the internal modulator. It corresponds to
both of the center spread which modulates input frequency as Middle Centered and down spread which modulates
so as not to exceed input frequency.
■ FEATURES
• Input frequency : 20 MHz to 134 MHz
• Output frequency : 20 MHz to 134 MHz
• Modulation rate : ± 0.5%, ± 1.5% (Center spread), − 1.0%, − 3.0% (Down spread)
• Equipped with crystal oscillation circuit: Range of oscillation 20 MHz to 48 MHz
• Modulation clock output Duty : 40% to 60%
• Modulation clock Cycle-Cycle Jitter : Less than 100 ps
• Low current consumption by CMOS process : 5 mA@24 MHz (Typ-sample, no load)
• Power supply voltage : 3.3 V ± 0.3 V
• Operating temperature : − 40 °C to +85 °C
• Package : SOP 8 pin
■ PACKAGE
8-pin plastic SOP
(FPT-8P-M02)
MB88152
■ PRODUCT LINE-UP
MB88152 has three kinds of input frequency, and two kinds of modulation type (center/down spread), total six line-
ups.
Product
MB88152-100
MB88152-101
MB88152-102
MB88152-110
MB88152-111
MB88152-112
Function
Frequency range from 20 MHz to 134 MHz, Down spread, No enable setting
Frequency range from 20 MHz to 67 MHz, Down spread, No modulation enable pin
Frequency range from 40 MHz to 133 MHz, Down spread, Enable setting
Frequency range from 20 MHz to 134 MHz, Center spread, No modulation enable pin
Frequency range from 20 MHz to 67 MHz, Center spread, Enable setting
Frequency range from 40 MHz to 133 MHz, Center spread, Enable setting
■ PIN ASSIGNMENT
XIN
XOUT
VSS
1
2
3
4
8
7
6
5
XENS
FREQ
VDD
XIN
XOUT
VSS
1
2
3
4
8
7
6
5
FREQ1
FREQ0
VDD
MB88152
MB88152
SEL
CKOUT
SEL
CKOUT
MB88152-101,
MB88152-102,
MB88152-111,
MB88152-112
MB88152-100,
MB88152-110
■ PIN DESCRIPTION
Pin name
XIN
I/O
I
Pin no.
Description
1
2
3
4
5
6
7
8
Crystal resonator connection Pin/clock input pin
Crystal resonator connection Pin
GND Pin
XOUT
O
VSS
SEL
I
Modulation rate setting pin
CKOUT
VDD
O
Modulated clock output pin
Power supply voltage pin
FREQ/FREQ0
XENS/FREQ1
I
I
Frequency setting pin
Modulation enable setting pin/frequency setting pin
2
MB88152
■ I/O CIRCUIT TYPE
Pin
Circuit type
Remarks
• CMOS hysteresis input
SEL
FREQ
FREQ0
FREQ1
XENS
• CMOS output
• IOL = 4 mA
CKOUT
Note : For XIN and XOUT pins, see “■CRYSTAL OSCILLATION CIRCUIT”.
3
MB88152
■ HANDLING DEVICES
Preventing Latchup
A latchup can occur if, on a CMOS IC, a voltage higher than VDD or a voltage lower than VSS is applied to an
input or output pin2 or a voltage higher than the rating is applied between VDD and VSS. A latchup, if it occurs,
significantly increases the power supply current and may cause thermal destruction of an element. When you
use a CMOS IC, be very careful not to exceed the maximum rating.
Handling unused pins
Do not leave an unused input pin open, since it may cause a malfunction. Handle by, for example, using a pull-
up or pull-down resistor.
The attention when the external clock is used
Input the clock to XIN, and don’t connect anything with XOUT you use the external clock.
And please pay attention so that an overshoot and an undershoot do not occur to an input clock of XIN.
Power supply pins
Please connecting to the power supply terminal of this device by as lower impedance as possible from the current
supply source.
We recommend connecting electrolytic capacitor (about 10 µF) and the ceramic capacitor (about 0.01 µF) in
parallel between VSS and VDD near the device, as a by - pass capacitor.
Crystal Oscillator Circuit
Noise near the XIN or XOUT pin may cause the device to malfunction. Design printed circuit boards so that
electric wiring of XIN and XOUT and crystal resonator (or ceramic resonator) don’t intersect other wiring.
It is strongly recommended that printed circuit board artwork that surrounds the XIN and XOUT pins with ground
be used to increase the expectation of stable operation.
4
MB88152
■ BLOCK DIAGRAM
VDD
Modulation rate setting
SEL
Frequency setting
PLL block
20 MHz to 134 MHz
down/center
spread
FREQ/FREQ0
Modulation enable /
freaquency setting
CKOUT
Clock output
XENS/FREQ1
XOUT
Reference clock
XIN
Rf = 1 MΩ
VSS
1
−
M
Phase
compare
V/I
convertion
C.P.
IDAC
ICO
Modulation
clock
output
Reference
clock
1
−
N
Loop filter
1
−
L
Modulation
rate setting
SEL
Modulation logic
MB88152 PLL block
XENS
5
MB88152
■ PIN SETTING
When changing the pin setting, the stabilization wait time for the modulation clock is required. The stabilization
wait time for the modilation clock takes the maximum value of Lock-Up time in “■ ELECTRICAL CHARACTER-
ISTICS”.
Modulation enable setting
XENS
Modulation
0
1
Modulation enable
Modulation disable
MB88152-101, 102, 111, 112
Note : MB88152-100 and 110 do not have XENS pin.
SEL modulation rate setting
SEL
Modulation rate
Remarks
± 0.5%
− 1.0%
± 1.5%
− 3.0%
MB88152-110, 111, 112
MB88152-100, 101, 102
MB88152-110, 111, 112
MB88152-100, 101, 102
Center spread
Down spread
Center spread
Down spread
0
1
Note : The modulation rate can be changed at the level of the terminal.
Frequency setting
FREQ
Frequency
20 MHz to 40 MHz
40 MHz to 80 MHz
33 MHz to 67 MHz
66 MHz to 134 MHz
MB88152-101, 111
0
MB88152-102, 112
MB88152-101, 111
MB88152-102, 112
1
Note : MB88152-100 and 110 do not have FREQ pin.
frequency setting
FREQ1
FREQ0
Frequency
0
0
1
1
0
1
0
1
20 MHz to 40 MHz
33 MHz to 67 MHz
40 MHz to 80 MHz
66 MHz to 134 MHz
MB88152-100, 110
Note : MB88152-101, 111, 102 and 112 have neither FREQ0 pin nor FREQ1 pin.
6
MB88152
• Center spread
Spectrum is spreaded (modulated) by centering on the input frequency.
3.0%
Radiation level
−1.5%
+1.5%
Frequency
Input
frequency
Center spread example of ± 1.5% (3.0%)
• Down spread
Spectrum is spreaded (modulated) below the input frequency.
3.0%
Radiation level
−3.0%
Input
frequency
Frequency
Down spread example of − 3.0%
7
MB88152
■ ABSOLUTE MAXIMUM RATINGS
(VSS = 0.0 V)
Rating
Parameter
Symbol
Unit
Min
− 0.5
Max
+ 4.0
Power supply voltage
Input voltage
VDD
VI
V
V
VSS − 0.5
VSS − 0.5
− 55
VDD + 0.5
VDD + 0.5
+ 125
Output voltage
VO
TST
TJ
V
Storage temperature
Operation junction temperature
Output voltage
°C
°C
mA
V
− 40
+ 125
IO
− 14
+ 14
Overshoot
VDD + 1.0 (within 50 ns)
Undershoot
VSS − 1.0 (within 50 ns)
V
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Value
Parameter
Symbol
Pin
Conditions
Unit
Min
Typ
Max
Power supply voltage
VDD
VDD
3.0
3.3
3.6
V
SEL
FREQ/FREQ0,
XENS/FREQ1
VDD × 0.80
VDD + 0.3
V
“H” level input voltage
“L” level input voltage
VIH
20 MHz to 100 MHz VDD × 0.80
100 MHz to 134 MHz VDD × 0.90
VDD + 0.3
VDD + 0.3
V
V
XIN
SEL
FREQ/FREQ0,
XENS/FREQ1
VSS
VDD × 0.20
V
VIL
20 MHz to 100 MHz
100 MHz to 134 MHz
20 MHz to 100 MHz
100 MHz to 134 MHz
VSS
VSS
40
VDD + 0.20
VDD + 0.10
60
V
V
XIN
XIN
50
50
Input clock
[Duty Cycle]
TDCI
Ta
%
45
55
Operatingtemperature
−40
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
8
MB88152
■ ELECTRICAL CHARACTERISTICS
(Ta = + 25 °C, VDD = 3.3V)
Value
Unit
Sym-
bol
Parameter
Pin
Conditions
Min
Typ
Max
24 MHz output
No load capacitance
Power supply current
Crystal oscillation frequency
ICC
VDD
5.0
7.0
mA
Basic wave oscillation
3rd over tone
20
40
20
20
40
20
20
40
40
48
XIN,
XOUT
fx
MHz
MB88152-100, 110
MB88152-101, 111
MB88152-102, 112
MB88152-100, 110
134
67
Input frequency
fin
XIN
MHz
MHz
134
134
67
Output frequency
fOUT
CKOUT MB88152-101, 111
MB88152-102, 112
H level output
134
VOH
VOL
VDD − 0.5
VDD
V
V
IOH = − 4 mA
Output voltage
CKOUT
L level output
IOL = 4 mA
VSS
0.4
4.0
Output through rate
SR
ZO
CKOUT
0.4 V to 2.4 V
0.4
V/ns
Ω
Output high impedance
Output clock Duty Cycle
CKOUT 20 MHz to 134 MHz
45
TDCC
CKOUT
1.5 V
40
60
16
%
XIN
SEL
FREQ/
FREQ0
XENS/
FREQ1
Ta = + 25 °C
VDD = VI = 0.0 V
f = 1 MHz
Input capacitance
CIN
pF
20 MHz to 67 MHz
15
10
7
Load capacitance
CL
CKOUT 67 MHz to 100 MHz
100 MHz to 134 MHz
CKOUT
pF
Modulation cycle
Lock-Up time
FMOD
TLK
12.5
2
kHz
ms
CKOUT
5
No load
CKOUT
Cycle-cycle jitter
TJC
100
ps
capacitance
9
MB88152
■ CRYSTAL OSCILLATOR CIRCUIT
The left side of figures below shows the connection example about general crystal resonator. The oscillation
circuit has the built-in feedback resistanc (1 MΩ). The value of cpacity (C1 and C2) is required adjusting to the
most suitable value of an individual crystal resonator.
The right side of figures below shows the example of connecting crystal for the 3rd over-tone oscillation. The
value of capacity (C1, C2 and C3) and inductance (L1) is needed adjusting to the most suitable value of an individual
crystal oscillator. When an external clock is used (the crystal resonator is not used) , input the clock to XIN pin
and do not connect anything with XOUT.
Internal
Rf (1 MΩ)
Rf (1 MΩ)
XIN Pin
XOUT Pin
XIN Pin
XOUT Pin
External
L1
C1
C2
C1
C2
C3
Normal crystal oscillation
3rd over tone
■ DEFINITION OF JITTER
• Cycle-cycle jitter
Output clock
tn
tn + 1
TJC = |tn − tn + 1|
Cycle - cycle jitter is defined the difference between a certain cycle and immediately after
(or, immediately before).
10
MB88152
■ INTERCONNECTION CIRCUIT EXAMPLE
XENS/FREQ1
1
2
8
7
6
5
FREQ/FREQ0
MB88152
3
4
+
C1
C2
C4
C3
SEL
R1
: oscillation stabilization capacitance
(see "■ CRYSTAL OSCILLATOR CIRCUIT”)
: Ta condenser or electrolytic capacitor of 10 µF or higher
: laminated ceramic capacitor about 0.01 µF (connect to close to this device)
: impedance matching resistor for board pattern
C1, C2
C3
C4
R1
11
MB88152
■ ORDERING INFORMATION
Part number
Frequency
Spread
Down
XENS
No
Package
Remarks
MB88152PNF-G-100-JNE1
MB88152PNF-G-101-JNE1
MB88152PNF-G-102-JNE1
MB88152PNF-G-110-JNE1
MB88152PNF-G-111-JNE1
MB88152PNF-G-112-JNE1
20 MHz to 134 MHz
20 MHz to 67 MHz
40 MHz to 134 MHz
20 MHz to 134 MHz
20 MHz to 67 MHz
40 MHz to 134 MHz
Down
Yes
Yes
No
8-pin plastic
SOP
(FPT-8P-M02)
Down
Center
Center
Center
Down
Yes
Yes
No
MB88152PNF-G-100-JN-EFE1 20 MHz to 134 MHz
MB88152PNF-G-101-JN-EFE1 20 MHz to 67 MHz
Down
Down
Center
Center
Center
Down
Yes
Yes
No
8-pin plastic
SOP
(FPT-8P-M02)
MB88152PNF-G-102-JN-EFE1 40 MHz to 134 MHz
MB88152PNF-G-110-JN-EFE1 20 MHz to 134 MHz
Embos taping
(EF type)
MB88152PNF-G-111-JN-EFE1
20 MHz to 67 MHz
Yes
Yes
No
MB88152PNF-G-112-JN-EFE1 40 MHz to 134 MHz
MB88152PNF-G-100-JN-ERE1 20 MHz to 134 MHz
MB88152PNF-G-101-JN-ERE1
20 MHz to 67 MHz
Down
Down
Center
Center
Center
Yes
Yes
No
8-pin plastic
SOP
(FPT-8P-M02)
MB88152PNF-G-102-JN-ERE1 40 MHz to 134 MHz
MB88152PNF-G-110-JN-ERE1 20 MHz to 134 MHz
Embos taping
(ER type)
MB88152PNF-G-111-JN-ERE1
20 MHz to 67 MHz
Yes
Yes
MB88152PNF-G-112-JN-ERE1 40 MHz to 134 MHz
12
MB88152
■ PACKAGE DIMENSION
Note 1) *1 : These dimensions include resin protrusion.
8-pin plastic SOP
(FPT-8P-M02)
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+0.25
1 5.05 –0.20 .199 +–..000180
0.22 –+00..0073
*
.009 +–..000031
8
5
*2 3.90±0.30 6.00±0.40
(.154±.012) (.236±.016)
Details of "A" part
1.55±0.20
45˚
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
0~8˚
"A"
1
4
1.27(.050)
0.44±0.08
(.017±.003)
M
0.13(.005)
0.50±0.20
(.020±.008)
0.15±0.10
(.006±.004)
(Stand off)
0.60±0.15
(.024±.006)
0.10(.004)
C
2002 FUJITSU LIMITED F08004S-c-4-7
Dimensions in mm (inches).
Note : The values in parentheses are reference values.
13
MB88152
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
F0311
FUJITSU LIMITED Printed in Japan
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