29LV800TE [FUJITSU]

8M (1M x 8/512 K x 16) BIT; 8M ( 1M X 512分之8的K× 16 )位
29LV800TE
元器件型号: 29LV800TE
生产厂家: FUJITSU COMPONENT LIMITED.    FUJITSU COMPONENT LIMITED.
描述和应用:

8M (1M x 8/512 K x 16) BIT
8M ( 1M X 512分之8的K× 16 )位

PDF文件: 总58页 (文件大小:292K)
下载文档:  下载PDF数据表文档文件
型号参数:29LV800TE参数

29MMMETRIC

LOCHST.D=656MM

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315 ETC

29MPA0373

26.0-31.0 GHz GaAs MMIC Power Amplifier

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34 MIMIX

29MT050XH

Power Field-Effect Transistor, 46A I(D), 500V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTP, 12 PIN

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0 IRF

29MT050XH

Power Field-Effect Transistor, 46A I(D), 500V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTP, 12 PIN

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0 INFINEON

29-PGM06002-30

PLCC-to-PGA JEDEC Type 0.050 [1.27] Pitch Adapter

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18 ARIES

29PL256N

256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory

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66 SPANSION

29PS

25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches

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100 TI

29R3-SERIES

Optoelectronic

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14 ETC

29R5-SERIES

Optoelectronic

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15 ETC

29RD100

Silicon Controlled Rectifier, 40000mA I(T), 1000V V(DRM)

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0 NIEC

29RD120

Silicon Controlled Rectifier, 40000mA I(T), 1200V V(DRM)

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0 NIEC

29RD40

Silicon Controlled Rectifier, 40000mA I(T), 400V V(DRM)

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0 NIEC

29RD50

Silicon Controlled Rectifier, 40000mA I(T), 500V V(DRM)

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0 NIEC

29RD60

Silicon Controlled Rectifier, 40000mA I(T), 600V V(DRM)

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0 NIEC

29RD80

Silicon Controlled Rectifier, 40000mA I(T), 800V V(DRM)

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0 NIEC