关闭背景特效

1MBH03D-120-S06TT [FUJI]

Insulated Gate Bipolar Transistor,;

1MBH03D-120-S06TT


元器件型号：	1MBH03D-120-S06TT
生产厂家：	FUJI ELECTRIC
描述和应用：	Insulated Gate Bipolar Transistor, 栅
PDF文件：	总15页 (文件大小：1156K)
下载文档：	下载PDF数据表文档文件
型号参数：1MBH03D-120-S06TT参数

1MBH05D-060

Ratings and characteristics of Fuji IGBT

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44 FUJI

1MBH05D-120

Ratings and characteristics of Fuji IGBT

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36 FUJI

1MBH05D-120-S06TT

Insulated Gate Bipolar Transistor,

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0 FUJI

1MBH08D-120

Ratings and characteristics of Fuji IGBT

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26 FUJI

1MBH08D-120

1200V / 8A Molded Package

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12 FUJI

1MBH08D-120_09

1200V / 8A Molded Package

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19 FUJI

1MBH10D-060

600V / 10A Molded Package

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21 FUJI

1MBH10D-060

Ratings and characteristics of Fuji IGBT

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54 FUJI

1MBH10D-060_0409

600V / 10A Molded Package

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13 FUJI

1MBH10D-060-S06TT

Insulated Gate Bipolar Transistor,

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0 FUJI

1MBH10D-120

1200V / 10A Molded Package

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10 FUJI

1MBH10D-120

Ratings and characteristics of Fuji IGBT

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42 FUJI

1MBH10D-120_09

1200V / 10A Molded Package

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4 FUJI

1MBH10D-120-S06TT

Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel,

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0 FUJI

1MBH15-120

Molded IGBT

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21 FUJI

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