关闭背景特效

1MBI1000VXB-170EL-54 [FUJI]

Insulated Gate Bipolar Transistor, 1400A I(C), 1700V V(BR)CES, N-Channel, MODULE-12;

1MBI1000VXB-170EL-54


元器件型号：	1MBI1000VXB-170EL-54
生产厂家：	FUJI ELECTRIC
描述和应用：	Insulated Gate Bipolar Transistor, 1400A I(C), 1700V V(BR)CES, N-Channel, MODULE-12 局域网栅功率控制晶体管
PDF文件：	总9页 (文件大小：856K)
下载文档：	下载PDF数据表文档文件
型号参数：1MBI1000VXB-170EL-54参数

1MBI100FE060

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C)

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36 ETC

1MBI100U4F-120L-50

IGBT MODULE (U series) 1200V / 100A / 1 in one package

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38 FUJI

1MBI1200U4C-120

IGBT MODULE

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41 FUJI

1MBI1200U4C-120

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, M142, 7 PIN

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0 FUJI

1MBI1200U4C-170

IGBT MODULE

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28 FUJI

1MBI1200U4C-170

Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, M142, 7 PIN

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0 FUJI

1MBI1200UC-170

IGBT MODULE

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63 FUJI

1MBI150NH-060

IGBT MODULE

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116 FUJI

1MBI150NK-060

IGBT MODULE ( N series )

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88 FUJI

1MBI150SH-140

Tentative target specification

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40 FUJI

1MBI150VA-120L-50

Insulated Gate Bipolar Transistor

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3 FUJI

1MBI1600U4C-120

IGBT MODULE

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36 FUJI

1MBI1600U4C-170

IGBT MODULE

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57 FUJI

1MBI1600U4C-170

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, M142, 7 PIN

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0 FUJI

1MBI1600UC-170

IGBT MODULE

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53 FUJI

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