2SK3600-01S [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3600-01S |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3600-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
100
Unit
V
Drain-source voltage
V
VDSX *5
ID
70
±29
±116
±30
29
Equivalent circuit schematic
A
Continuous drain current
Pulsed drain current
Gate-source voltage
A
ID(puls]
VGS
V
Drain(D)
A
Non-repetitive Avalanche current IAS *2
mJ
kV/µs
kV/µs
W
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
155.8
20
5
Gate(G)
°C
°C
1.67
Source(S)
105
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
<
<
<
*5 VGS=-30V
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C *4 VDS 100V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
V
100
Drain-source breakdown voltaget
Gate threshold voltage
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=100V VGS=0V
VDS=80V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
62
VDS=0V
IGSS
RDS(on)
gfs
VGS=±30V
nA
10
47
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=10A VGS=10V
mΩ
S
6
12
ID=10A VDS=25V
VDS=75V
Ciss
Coss
Crss
td(on)
tr
730
190
12
1095
285
18
pF
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=10A
12
18
3.8
23
8.5
6
VGS=10V
35
td(off)
tf
Turn-off time toff
RGS=10 Ω
13
22
9
33
VCC=50V
ID=20A
QG
nC
Total Gate Charge
13.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
6
9
VGS=10V
µ
29
L=222 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
65
0.17
1.65
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
V
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
Rth(ch-c)
channel to case
1.191
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3600-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
120
400
350
300
250
200
150
100
50
IAS=12A
100
80
60
40
20
0
IAS=17A
IAS=29A
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tc [°C]
starting Tch [°C]
Typical Output Characteristics
Typical Transfer Characteristic
ID=f(VDS):80µs Pulse test,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
80
60
40
20
0
100
10
1
20V
10V
8V
7.5V
7.0V
6.5V
6.0V
0.1
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
VDS [V]
VGS[V]
Typical Transconductance
Typical Drain-Source on-state Resistance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
100
10
1
0.18
0.15
0.12
0.09
0.06
0.03
0.00
VGS=
6.5V
6.0V
7.0V
5.5V
8V
7.5V
10V
20V
0.1
0.1
1
10
100
0
10
20
30
ID [A]
40
50
60
ID [A]
2
2SK3600-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
VGS(th)=f(Tch):VDS=VGS,ID=250µA
RDS(on)=f(Tch):ID=10A,VGS=10V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
150
125
100
max.
min.
max.
75
50
typ.
25
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
Tch [°C]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A, Tch=25°C
101
14
12
10
8
100
Ciss
Vcc= 50V
Coss
6
10-1
4
2
Crss
102
10-2
10-1
0
100
101
0
10
20
30
40
VDS [V]
Qg [nC]
Typical Switching Characteristics vs. ID
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
102
101
100
100
10
1
tf
td(off)
td(on)
tr
0.1
10-1
100
101
102
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
ID [A]
3
2SK3600-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2 3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/denshi/scd/
4
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