2SK3609-01 [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET

2SK3609-01


型号：	2SK3609-01
厂家：	FUJI ELECTRIC
描述：	N-CHANNEL SILICON POWER MOSFET N沟道硅功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总4页 (文件大小：110K)
下载：	下载PDF数据表文档文件

2SK360D

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346

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16 ETC

2SK360-D

暂无描述

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0 HITACHI

2SK360E

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346

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25 ETC

2SK360F

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-346

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27 ETC

2SK360-F

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

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0 RENESAS

2SK360IGDUR

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3

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0 HITACHI

2SK360IGDUR

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-3

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0 RENESAS

2SK360IGE01

暂无描述

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0 HITACHI

2SK360IGETL

Silicon N-Channel MOS FET

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52 RENESAS

2SK360IGETL-E

暂无描述

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0 RENESAS

2SK360IGETR

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3

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1 HITACHI

2SK360IGETR-E

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-3

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1 RENESAS

2SK360IGF01

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3

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0 HITACHI

2SK360IGFTL

Silicon N-Channel MOS FET

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48 RENESAS

2SK360IGFUR

暂无描述

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0 RENESAS

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