2SK3676-01SJ [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3676-01SJ |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3676-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
900
Unit
V
Drain-source voltage
VDSX *5
ID
900
±6
V
Continuous drain current
Pulsed drain current
A
Equivalent circuit schematic
ID(puls]
VGS
±24
±30
6
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
A
EAS*1
244
40
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
1.67
Gate(G)
195
+150
-55 to +150
Source(S)
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=12.4mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*4 VDS 900V *5 VGS=-30V
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
µ
V
ID=250 A
VGS=0V
900
µ
V
ID= 250 A
VDS=VGS
3.0
5.0
µA
25
VDS=900V VGS=0V
VDS=720V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
ID=3A
VDS=0V
VGS=10V
100
Ω
S
1.92
7.4
750
2.50
3.7
ID=3A VDS=25V
VDS=25V
Ciss
pF
1125
Coss
Crss
td(on)
tr
Output capacitance
100
7
150
11
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=3A
ns
21
32
12
63
8.0
VGS=10V
td(off)
tf
Turn-off time toff
42
11
25
3
RGS=10 Ω
16.5
32
4.5
10.5
QG
QGS
QGD
IAV
nC
Total Gate Charge
VCC=450V
ID=6A
Gate-Source Charge
Gate-Drain Charge
7
VGS=10V
6
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=12.4mH Tch=25°C
VSD
trr
Qrr
0.90
1.50
V
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
1.1
5.5
µs
µC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.640
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
2SK3676-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
10V
20V
8.0V
7.0V
8
6
4
2
0
6.5V
6.0V
VGS=5.5V
0
0
5
10
15
20
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
7
6
5
4
3
2
1
0
6.0V
6.5V
VGS=5.5V
7.0V
8.0V
10V
20V
max.
typ.
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
2
2SK3676-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Typical Gate Charge Characteristics
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS=f(Qg):ID=6A,Tch=25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
Vcc= 180V
450V
max.
min.
720V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
101
10
Ciss
100
10-1
10-2
10-3
Coss
Crss
1
0.1
0.00
100
101
102
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
IAS=2A
103
102
101
100
800
600
tf
td(off)
400 IAS=4A
td(on)
tr
IAS=6A
200
0
0
10-1
100
101
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3676-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2
3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/denshi/scd/
4
相关型号：
2SK367_07
Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications
TOSHIBA
2SK368
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER, CONSTANT CURRENT APPLICATIONS)
TOSHIBA
2SK368-GR
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, 2-3F1B, TO-236MOD, SC-59, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK368-O
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, 2-3F1B, TO-236MOD, SC-59, 3 PIN, FET General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明