2SK3682-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3682-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3682-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
TO-220AB
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit
V
Remarks
Drain-source voltage
VDS
VDSX
ID
500
500
±19
±76
±30
19
V
VGS=-30V
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
A
ID(puls]
VGS
IAS
A
V
<
Equivalent circuit schematic
A
Tch 150°C
=
Maximum avalanche current
Non-Repetitive
EAS
245.3
mJ
L=1.25mH
Drain(D)
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
VCC=50V *2
<
dVDS/dt
dV/dt
PD
20
5
kV/s
kV/µs
W
VDS 500V
=
*3
Ta=25°C
Tc=25°C
2.02
Gate(G)
270
Operating and storage
temperature range
Tch
+150
Source(S)
°C
°C
Tstg
-55 to +150
*2 See to Avalanche Energy Graph
<
<
<
*3 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Symbol
V(BR)DSS
VGS(th)
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
ID= 250 A
VGS=0V
500
V
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
µA
Tch=25°C
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IGSS
RDS(on)
gfs
10
ID=9.5A VGS=10V
0.29
0.38
Ω
7.5
15
1560
230
8
S
ID=9.5A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
2340
345
12
pF
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=9.5A
ns
29
43.5
13
19.5
84
VGS=10V
56
Turn-off time toff
td(off)
tf
RGS=10 Ω
8
12
34
51
nC
Total Gate Charge
QG
VCC=250V
ID=19A
13
19.5
15
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
IAV
10
VGS=10V
19
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=1.25mH Tch=25°C
1.20
1.50
V
VSD
IF=19A VGS=0V Tch=25°C
IF=19A VGS=0V
-di/dt=100A/µs
Tch=25°C
0.57
7.0
µs
µC
trr
Qrr
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.463
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
2SK3682-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
50
40
30
20
10
0
20V
10V
8V
7V
6.5V
VGS=6.0V
0
25
50
75
100
125
150
0
4
8
12
16
20
24
VDS [V]
Tc [°C]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
100
10
1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VGS=6V
6.5V
7V
8V
10V
20V
max.
typ.
0
10
20
30
40
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [°C]
2
2SK3682-01
FUJI POWER MOSFET
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25 °C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 100V
250V
max.
min.
400V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Tch [°C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
104
103
102
101
100
100
10
1
Ciss
Coss
Crss
0.1
100
101
VDS [V]
102
103
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=19A
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
103
102
101
100
700
IAS=8A
600
500
400
300
200
100
0
td(off)
IAS=12A
IAS=19A
td(on)
tf
tr
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3682-01
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=50V
102
101
100
10-1
Single Pulse
10-2
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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