2SK956-01 [FUJI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | 2SK956-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总1页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C
o l l m e r
Semiconductor
MOS-FET, High Voltage Diodes
N-Channel Silicon Power MOS-FET
c
c
c
F-I Series = Low RDS(ON)
F-II Series = VGS ±30 V, Reduced Turn Off Time
FAP-II Series = High Avalanche Ruggedness
c
c
c
F-III Series = Logic Level, High gfs
FAP-III = Logic Level, High Avalanche Ruggedness
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
c
c
c
FAP-IIA = Reduced Turn Off Time
FAP-IIIBH = High Speed Non Logic
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
Ratings
Characteristics
Mfr.Õs
Series
Type
R
DS(ON) (½) (Max.)
VGS=10V
Package
V
(V)
DSS
I
D
P
(W)
D
C
(pf)
iss
C
(pf)
oss
t
on
toff
(ns)
(A)
(ns)
VGS=4V
2SJ314-01L
2SJ314-01S
2SK2248-01L
2SK2248-01S
2SK2687-01
2SK2893-01
2SK2900-01
2SK2690-01
2SK2906-01
2SK3270-01
2SK3271-01
2SK3216-01
2SK3217-01MR
2SK3218-01
2SK3219-01MR
2SK2521-01
2SK3262-01MR
2SK900
FAP-III
FAP-III
FAP-III
FAP-III
FAP-III
FAP-IIIB
FAP-IIIBH
FAP-III
FAP-IIIBH
Trench
Trench
FAP-IIIBH
FAP-IIIBH
FAP-IIIBH
FAP-IIIBH
FAP-II
FAP-IIIB
F-I
F-I
F-II
FAP-IIA
FAP-IIS
FAP-IIS
F-I
FAP-IIA
FAP-II
Ð60
Ð60
30
30
30
30
60
60
60
Ð5.0
Ð5.0
35.0
35.0
50.0
100.0
45.0
80.0
100.0
80.0
100.0
45.0
50.0
35.0
40.0
18.0
20.0
12.0
30.0
20.0
5.0
15.0
10.0
15.0
16.0
4.0
9.0
9.0
8.0
9.0
4.0
4.0
20
20
60
60
60
0.480
0.480
0.037
0.037
0.017
0.007
Ñ
0.017
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
0.15
Ñ
Ñ
Ñ
Ñ
Ñ
0.300
0.300
0.022
0.022
0.010
0.004
0.140
0.010
0.007
0.006
0.006
0.026
0.025
0.048
0.043
0.180
0.100
0.300
0.100
0.350
1.600
0.550
0.900
0.380
0.550
4.000
1.500
1.500
2.000
1.400
3.600
3.600
750
750
300
300
53
53
270
270
720
720
520
1270
200
450
470
285
285
240
265
270
263
150
520
260
1000
740
100
230
60
K-PACK L
K-PACK S
K-PACK L
K-PACK S
TO220
TO3P
TO220
TO3P
TO3P
TO-220
TO3P
TO220
TO-220F15
TO220
TO-220F15
TO220
TO-220F15
TO220
TO3P
2630
2630
4130
9900
3450
5250
8100
9000
9000
4800
4800
3900
3980
1650
2550
1800
3900
3300
1500
2100
950
4000
4950
450
2100
1200
1200
3300
1950
1950
1200
1200
1950
4950
1370
1870
3150
1250
1250
1140
1140
800
830
330
435
300
900
480
130
380
180
500
470
75
300
180
180
320
188
188
103
260
110
143
400
250
250
186
230
158
174
150
85
150
60
125
150
135
155
80
70
80
70
50
45
80
150
150
60
50
80
125
100
80
150
150
150
150
80
60
60
100
100
150
150
200
200
250
250
450
500
500
500
500
600
800
800
800
900
900
1000
1000
75
2SK902
200
375
55
220
25
130
165
20
425
30
30
130
55
2SK1017-01
2SK2021-01
2SK2642-01MR
2SK2757-01
2SK725
2SK1941-01R
2SK2646-01
2SK956-01
2SK2648-01
2SK2654-01
2SK2082-01
2SK1986-01
2SK2258-01
TO3P
TO220
TO220F15
TO220
TO3P
TO3PF
TO220
TO3P
TO3P
TO3P
TO3P
TO220
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
13
440
420
50
690
95
FAP-II
FAP-IIS
FAP-IIS
FAP-IIA
FAP-II
95
320
160
160
Ñ
Ñ
150
150
FAP-II
100
55
TO3P
Fast Recovery High Voltage Silicon Rectifiers
Repetitive
Peak Reverse
Voltage
Average
Forward
Current
Non-Repetitive
Peak Surge
Current
Maximum Forward
Voltage Drop
Maximum Reverse
Current Repetitive
Maximum Junction
Capacitance
(at VRRM = 0V, T = 25¡C)
Mfr.Õs
Type
(at 1 mA, T
a
= 25¡C)
(at VRRM, T
a
= 25¡C)
a
VRRM
Io*
IFSM**
VFM
IRRM
@ 1 MHz
kV
mA
A
Volts
µA
pF
ESJC30-08
CS57-04A
CS54-08A
CS52-12A
CS52-14A
CS56-24
12
4
8
12
14
24
300
25
25
10
10
10
15.0
1.0
1.0
0.5
0.5
0.5
16.0
15.0
30.0
45.0
51.0
75.0
10
1
1
1
1
Ñ
2
2
1
1
1
1
Notes: *Single phase; half sine wave in oil bath or filled epoxy at ambient temperature 25¡C. **1/2 cycle, 60 Hz at full load. Reverse Recovery Time: ÒAÓ Type Ñ 80 nsec max. @ Ta = 25¡C, IF = 2 mA, IR = 1 mA; Non ÒAÓ Type Ñ 100 nsec max. @ Ta =
25¡C, I
F
= 2 mA, I
R
= 1 mA. Storage and Operating Junction Temperature, Tj: Ð65¡C to +150¡C. Packaging: Bulk or tape and reel available (please specify).
Same
Day
c
803
Shipments
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