6MBI180VX-120-50 [FUJI]
IGBT MODULE; IGBT模块
| 型号： | 6MBI180VX-120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE |
| 文件： | 总6页 (文件大小：637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6MBI180VX-120-50
IGBT MODULE (V series)
IGBT Modules
1200V / 180A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
V
CES
GES
1200
±20
150
400
150
400
835
175
V
V
Gate-Emitter voltage
Collector current
V
Ic
Continuous
1ms
Tc=80°C
Tc=80°C
Icp
A
-Ic
-Ic pulse
1ms
Collector power dissipation
Junction temperature
Pc
Tj
1 device
W
Operating junciton temperature
(under switching conditions)
Tjop
150
°C
Case temperature
Tc
125
Storage temperature
Tstg
-40 to +125
between terminal and copper base (*1)
between thermistor and others (*2)
Isolation voltage
Screw torque
V
iso
AC : 1min.
M5
2500
3.5
VAC
N m
Mounting (*3)
-
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
6MBI180VX-120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
1.0
200
7.0
3.30
-
Zero gate voltage collector current
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
-
mA
nA
V
Gate-Emitter leakage current
Gate-Emitter threshold voltage
GE = 0V, VGE = ±20V
-
-
VGE (th)
CE = 20V, I
C
= 200mA
6.0
6.5
Tj=25°C
-
2.85
3.20
3.25
1.85
2.20
2.25
16.5
0.39
0.09
0.03
0.53
0.06
2.70
2.85
2.80
1.70
1.85
1.80
-
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
I
C
= 200A
-
-
Collector-Emitter saturation voltage
V
-
2.30
-
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
(chip)
I
C
= 200A
-
-
Input capacitance
Turn-on time
Cies
ton
tr
VCE = 10V, VGE = 0V, f = 1MHz
-
-
nF
µs
-
1.20
0.60
-
VCC = 600V
-
I
C
= 200A
tr (i)
toff
tf
-
VGE = +15 / -15V
-
1.00
0.30
3.15
-
RG = 1.2Ω
Turn-off time
-
Tj=25°C
-
VF
I
F
= 200A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
-
-
Forward on voltage
V
-
2.15
-
VF
(chip)
I
I
F
F
= 200A
= ±20
Tj=125°C
Tj=150°C
-
-
-
-
Reverse recovery time
Resistance
trr
R
B
0.1
-
µs
Ω
K
T = 25°C
-
5000
495
3375
T = 100°C
T = 25 / 50°C
465
3305
520
3450
B value
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
Inverter IGBT
Rth(j-c)
-
-
-
-
-
0.18
0.29
-
Thermal resistance (1device)
Inverter FWD
°C/W
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
0.05
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Equivalent Circuit Schematic
2
6MBI180VX-120-50
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
400
400
VGE=20V
VGE=20V
12V
15V
12V
300
200
100
0
300
15V
200
10V
8V
10V
100
8V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
o
Tj= 25 C / chip
400
8
6
Tj=25°C 125°C
150°C
300
200
100
0
4
Ic=400A
Ic=200A
Ic= 100A
2
0
0
1
2
3
4
5
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
100.0
10.0
1.0
Cies
VGE
Cres
Coes
VCE
0.1
0
250 500 750 1000 1250 1500 1750 2000
Gate charge: Qg [nC]
0
10
20
30
40
Collector - Emitter voltage: VCE [V]
3
6MBI180VX-120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω, Tj= 125°C
Vcc=600V, VGE=±15V, Rg=1.2Ω, Tj= 150°C
10000
1000
100
10000
1000
100
10
toff
toff
ton
tr
ton
tr
tf
tf
10
0
100
200
300
400
500
0
100
200
300
400
500
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω
10000
1000
100
50
40
30
20
10
0
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
toff
ton
Err(150°C)
Err(125°C)
tr
tf
10
0.1
1.0
10.0
0
100
200
300
400
500
Gate resistance : Rg [Ω]
Collector current: IC [A]
[ Inverter ]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.2Ω ,Tj <= 125°C
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V
50
500
400
300
200
100
0
40
30
20
10
0
RBSOA
(Repetitive pulse)
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
0
200 400 600 800 1000 1200 1400 1600
Collector-Emitter voltage : VCE [V]
0
1
10
100
Gate resistance : Rg [Ω]
4
6MBI180VX-120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω
1000
100
10
400
300
200
100
0
Tj=25°C
Irr(150°C)
Irr(125°C)
Tj=150°C
trr(150°C)
trr(125°C)
Tj=125°C
0
1
2
3
4
0
100
200
300
400
500
600
Forward on voltage : VF [V]
Forward current : IF [A]
[ Thermistor ]
Transient thermal resistance (max.)
Temperature characteristic (typ.)
1.00
0.10
0.01
100
FWD[Inverter]
IGBT[Inverter]
10
1
0.1
0.001
0.010
0.100
1.000
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
Outline Drawings, mm
5
6MBI180VX-120-50
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
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Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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6
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