7MBR25NE120 [FUJI]
IGBT (1200V/25A/PIM); IGBT （ 1200V / 25A / PIM ）
| 型号： | 7MBR25NE120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT (1200V/25A/PIM) |
| 文件： | 总9页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Modules
7MBR25NE120
IGBT MODULE
1200V / 25A / PIM
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol
VCES
VGES
IC
Condition
Ra ting
1200
±20
Unit
V
Collector-Emitter voltage
Gate-Emitter voltage
V
Continuous
1ms
A
25
Collector current
ICP
A
50
-IC
A
25
1 device
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
PC
W
V
200
VCES
VGES
IC
1200
±20
V
Continuous
1ms
A
15
ICP
A
30
1 device
Collector power disspation
Repetitive peak reverse voltage
Average forward current
PC
W
V
120
1200
1
IF(AV)
IFSM
VRRM
VRSM
IO
A
10ms
Surge current
A
50
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
V
1600
1700
25
V
50Hz/60Hz sine wave
Tj=150°C, 10ms
A
Surge current (Non-Repetitive)
IFSM
A
320
Tj=150°C, 10ms
I²t
(Non-Repetitive)
A²s
°C
°C
V
512
Tj
Operating junction temperature
Storage temperature
+150
-40 to +125
AC 2500
1.7 *1
Tstg
Viso
AC : 1 minute
Isolation voltage
N·m
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
7MBR25NE120
IGBT Module
Electrical characteristics (Tj=25°C unless without specified)
Item
Symbol
Condition
Characteristics
Unit
Min.
Typ.
Max.
1.0
20
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
mA
µA
V
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, Ic=25A
-Ic=25A
4.5
7.5
3.3
3.0
V
V
4000
pF
µs
µs
µs
µs
µs
mA
µA
V
VGE=0V, VCE=10V, f=1MHz
VCC=600V
Switching time
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.3
0.8
0.6
1.5
0.5
1
tr
IC=25A
toff
VGE=±15V
tf
RG=51 ohm
trr
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
IF=25A
ICES
IGES
VCE(sat)
ton
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V
VCC=600V
µs
µs
µs
µs
mA
µs
V
tr
IC=15A
toff
VGE=±15V
tf
RG=82 ohm
IRRM
trr
Reverse current
VR=1200V
Reverse recovery time
Forward voltage
Reverse current
0.6
1.4
1.0
VFM
IRRM
IF=25A
mA
VR=1600V
Thermal Characteristics
Item
Symbol
Condition
Characteristics
Typ.
Unit
Min.
Max.
0.63
1.70
Inverter IGBT
Inverter FRD
Thermal resistance ( 1 device )
Rth(j-c)
Rth(c-f)
Brake IGBT
1.04 °C/W
3.40
Converter Diode
With thermal compound
Contact thermal resistance
*
0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)
IGBT Module
7MBR25NE120
Characteristics (Representative)
Inverter
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=125°C
Tj=25°C
60
60
50
40
50
40
30
20
30
20
10
0
10
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
10
8
6
8
6
4
2
0
4
2
0
0
5
10
15
20
25
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=51 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=51 ohm, VGE=±15V, Tj=125°C
1000
1000
100
10
100
10
0
10
20
30
40
50
0
10
20
30
40
50
Collector current : Ic [A]
Collector current : Ic [A]
7MBR25NE120
IGBT Module
Dynamic input characteristics
Tj=25°C
Switching time vs. RG
Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C
1000
800
600
400
200
0
25
20
15
10
1000
5
0
100
0
100
200
300
400
500
100
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current vs. Forward voltage
VGE=0V
60
50
40
100
10
1
30
20
10
0
0
10
20
30
40
50
0
1
2
3
4
5
Forward current
:
IF [A]
Forward voltage
:
VF [V]
Reversed biased safe operating area
>
<
<
Transient thermal resistance
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 51 ohm
250
200
150
100
1
0.1
50
0
0.01
0
200
400
600
800
1000
1200
0.001
0.01
0.1
1
Collector-Emitter voltage
:
VCE [V]
Pulse width : PW [sec.]
IGBT Module
7MBR25NE120
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss vs. Collector current
Vcc=600V, RG=51 ohm, VGE=±15V
10
8
10
6
4
1
2
0
0.1
0
5
10
15
20
25
30
35
0
10
20
30
40
50
Collector-Emitter voltage
:
VCE [V]
Collector current
:
Ic [A]
Converter Diode
Forward current vs. Forward voltage
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
Forward voltage
: VF [V]
7MBR25NE120
IGBT Module
Brake
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
30
20
30
20
10
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
10
8
6
8
6
4
2
0
4
2
0
0
5
10
15
20
25
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125°C
1000
100
10
1000
100
10
0
10
20
30
0
10
20
30
Collector current : Ic [A]
Collector current : Ic [A]
7MBR25NE120
IGBT Module
Dynamic input characteristics
Tj=25°C
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C
1000
800
600
400
25
20
15
10
5
1000
200
0
100
0
0
50
100
150
200
250
300
100
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reversed biased safe operating area
Switching loss vs. Collector current
Vcc=600V, RG=82 ohm, VGE=±15V
<
<
>
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 82 ohm
6
160
5
4
3
120
100
80
60
40
2
1
0
20
0
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
Collector-Emitter voltage
:
VCE [V]
Collector current
:
Ic [A]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
10
1
0.1
0
5
10
15
20
25
30
35
Collector-Emitter voltage
:
VCE [V]
7MBR25NE120
IGBT Module
Outline Drawings, mm
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-733-1700
972-381-9991 Fax
http://www.collmer.com
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