7MBR25VY120-50 [FUJI]

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26;
7MBR25VY120-50
型号: 7MBR25VY120-50
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26

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文件: 总8页 (文件大小:825K)
下载:  下载PDF数据表文档文件

7MBR30NE060

IGBT(600V/30A/PIM)

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200 FUJI

7MBR30NE-060

7 PIM IGBT

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18 ETC

7MBR30NF060

IGBT module

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191 FUJI

7MBR30NF-060

7 PIM IGBT

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15 ETC

7MBR30SA060

IGBT MODULE(600V/30A/PIM)

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432 FUJI

7MBR30SA060

IGBT MODULE (S series)

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54 ETC

7MBR30SA060

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

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8 FUJI

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42 ETC

7MBR30SA-060-50

IGBT MODULE (S series)

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26 ETC

7MBR30SA060E

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES

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1 FUJI

7MBR30SA060E-01

IGBT Module

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113 FUJI

7MBR30SC060

PIM/Built-in converter with thyristor and brake (S series) 600V / 30A / PIM

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64 FUJI

7MBR30U2A060

IGBT MODULE (U series) 600V / 30A / PIM

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36 FUJI

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14 ETC

7MBR30UA060

Insulated Gate Bipolar Transistor,

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0 FUJI