7MBR50UD120 [FUJI]
Insulated Gate Bipolar Transistor,;
| 型号： | 7MBR50UD120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总5页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U-series IGBT Modules (1,200 V)
Yuichi Onozawa
Shinichi Yoshiwatari
Masahito Otsuki
1. Introduction
tion voltage between the collector and emitter
(VCE (sat)) and the turn-off loss of the newly developed
IGBT (trench FS-IGBT). From this figure, it can be
seen that the trade-off of the 1,200 V U-series IGBT is
dramatically improved compared to that of the former
generation S-series IGBT [planer NPT (non punch
Power conversion equipment such as general-use
inverters and uninterruptible power supplies (UPSs) is
continuously challenged by demands for higher effi-
ciency, smaller size, lower cost and lower noise.
Accordingly, power-converting elements for inverter
circuits are also required to have higher performance
and lower cost. At present, IGBTs (insulated gate
bipolar transistors) are the main power-converting
elements used because of their low loss and easy drive
circuit implementation. After commercializing the
IGBT in 1988, Fuji Electric has made efforts to
improve the IGBT in pursuit of lower loss and lower
cost. This paper introduces fifth generation IGBT
modules (U-series), and focuses on the 1,200 V series
used mainly in 400 V AC power lines overseas. Adop-
tion of a trench gate structure and a field stop (FS)
structure has resulted in a large improvement in the
trade-off characteristics of fifth generation IGBTs
compared with those of the fourth generation IGBT (S-
series).
through) -IGBT].
This dramatic improvement in
characteristics has been achieved through adopting a
field stop structure, evolved from an advanced NPT
configuration, and a trench gate structure, acquired
during development of MOSFETs (metal oxide semi-
conductor field effect transistors).
structures is described below.
Each of these
2.1 Field stop structure
Figure 2 shows output characteristics and Fig. 3
shows comparison of cross section of unit cells of a
planar NPT-IGBT and a planar FS-IGBT. An NPT-
IGBT requires a thick drift layer so that the depletion
layer does not contact the collector side during turn-off.
The FS-IGBT does not, however, require such a thick
drift layer as the NPT because a field stop layer to stop
the depletion layer has been fabricated in the FS-IGBT
and accordingly VCE (sat) can be lowered for the FS-
IGBT. Furthermore, the FS-IGBT has fewer excess
carriers because of its thinner drift layer. Moreover,
2. Features of the New IGBTs
Figure 1 shows the trade-off relation of the satura-
Fig.1 Trade-off between VCE (sat) and turn-off loss
Fig.2 Output characteristics
25
160
Room temperature
Trench FS-IGBT
Trench FS-IGBT 1,200 V/150 A
VCC=600 V, IC=150 A, VG=+15 V/–15 V
125°C
125°C
120
20
15
10
5
125°C
Room
Room
tempe-
temperature
Planar
NPT-IGBT
rature
125°C
Room
temperature
80
Trench
Planar NPT-IGBT
FS-IGBT
40
0
1.2
1.4
1.6
1.8
2.0
VCE(sat) (V)
2.2
2.4
2.6
2.8
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE(sat) (V)
115
Fig.3 Comparison of cross sections of unit cells of a planar
NPT-IGBT and a planar FS-IGBT
Fig.5 Short-circuit waveforms
Short-circuit test (at VCC = 800 V and Tj = 125°C)
Gate
Gate
Emitter
n+
Emitter
n+
VGE
p
p
VCE
VGE =0
n-
(Drift layer)
n-
(Drift layer)
Field stop layer
Collector
TW = 24.6 µs
ESC = 8.36 J
n
p
IC
Depletion layer
VGE , Ic=0
p
Collector
1,200 V/150 A Trench FS-IGBT
VCE : 200 V/div, IC : 500 A/div,
Time : 5 µs/div, VGE : 20 V/div
(a) Planar NPT-IGBT
(b) Planar FS-IGBT
Fig.4 Comparison of cross sections of IGBT unit cells
Fig.6 Comparison of turn-on waveforms
Emitter
Emitter
Layer
Layer
Turn-on
(at Tj = 125°C)
1,200 V/50 A
VCE : 200 V/div,
IC : 25 A/div,
Time : 200 ns/div
insulation film
insulation film
Conventional
PiN
n+
n+
Gate
p
Gate
p
New
FWD
n-
n-
Collector
Collector
(b) Trench FS-IGBT
(a) Planar FS-IGBT
the FS-IGBT can achieve reduced turn-off loss because
the remaining width of its neutral region is small when
its depletion layer is completely extended.
Fig.7 Comparison of FWD output characteristics
100
100
New FWD
Conventional
PIN
2.2 Trench gate structure
Figure 4 shows a cross section of a trench FS-IGBT.
By adopting a trench gate structure, channel density
80
60
40
20
80
60
40
20
1,200 V/75 A
FWD
can be increased and VCE
can be significantly
(sat)
lowered because resistance in the JFET part, which was
problematic for planar IGBTs when cell density in-
creased, can be reduced to zero.
On the other hand, the high channel density of the
trench IGBT causes a problem of low short-circuit
capacity. However, the trench gate structure optimiz-
es the total channel length to realize high short-circuit
capacity without sacrificing VCE (sat) (Fig. 5).
125°C
125°C
Room
Room
temperature
temperature
0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage (V)
116
Vol. 48 No. 4 FUJI ELECTRIC REVIEW
Table 1 Characteristics of the 1,200 V U-series IGBT modules
(a) Absolute maximum ratings (at Tc = 25°C unless otherwise specified)
(c) Thermal resistance characteristics
Characteristics
Item
Symbol
Condition
Max. rating Unit
Item
Symbol Condition
Unit
min. typ. max.
Collector-emitter
voltage
VCES
1,200
V
V
Thermal resistance
(1 device)
IGBT
–
–
–
–
0.21
0.33
Rth(j-c)
Gate-emitter
voltage
VGES
IC
±20
FWD
°C/W
Thermal resistance
between case and fins
Rth(c-f)
–
0.05
–
Tj =25°C
150
100
300
200
100
200
600
Continous
1 ms
Tj =80°C
Tj =25°C
Tj =80°C
IC pulse
A
Collector current
Maximum loss
Table 2 1,200 V U-series IGBT modules
–IC
–IC pulse
PC
1 ms
Rated
voltage
(V)
Rated
current
(A)
Package
Types
Sale date
1 device
W
Junction
temperature
Tj
150
°C
10
15
7MBR10UE120
7MBR15UE120
7MBR10UA120
7MBR15UA120
7MBR25UA120
7MBR35UA120
7MBR35UB120
7MBR50UB120
7MBR75UB120
7MBR10UC120
7MBR15UC120
7MBR25UC120
7MBR35UC120
Small PIM
Preserving
temperature
–40 to
+125
Tstg
Viso
°C
10
Isolation voltage
(package)
15
AC : 1 min
2,500
V
EP2
25
Mounting
Terminals
3.5
3.5
Screw fastening
torque
Nm
35
35
EP3
50
(b) Electrical characteristics (at Tc = 25°C unless otherwise specified)
75
Characteristics
10
Item
Symbol
Condition
Unit
min. typ. max.
15
HEP2
Collector-
emitter
leakage
current
25
VGE =0 V,
VCE =1,200 V
ICES
–
–
1.0 mA
35
35
7MBR35UD120
7MBR50UD120
7MBR75UD120
6MBI75UA-120
6MBI75UB-120
6MBI100UB-120
6MBI150UB-120
6MBI75UC-120
6MBI100UC-120
3MBI150UC-120
3MBI150U-120
7MBI75UD-120
7MBI100UD-120
7MBI150UD-120
2MBI75UA-120
2MBI100UA-120
2MBI150UA-120
2MBI150UB-120
2MBI200UB-120
2MBI200UC-120
2MBI300UC-120
2MBI300UD-120
2MBI300UE-120
2MBI450UE-120
6MBI225U-120
6MBI300U-120
6MBI450U-120
Gate-emitter
leakage
HEP3
50
VCE =0 V,
IGES
–
–
–
0.2 µA
VGE =±20 V
75
current
New PC2
75
Gate-emitter
threshold
voltage
VCE =20 V,
IC =100 mA
VGE(th)
7.0
–
V
V
75
100
150
75
Tj =25°C
Tj =125°C
Tj =25°C
Tj =125°C
–
–
–
–
1.95
2.2
–
–
–
–
VCE(sat)
(Terminal)
Collector-
emitter
saturation
voltage
VGE =
1,200
New PC3
April 2003
15 V,
IC
=
1.75
2.0
VCE(sat)
(Chip)
100 A
100
150
150
75
Input
capacitance
Cies
Coes
–
–
13.3
0.8
–
–
New PC2
7in1
(M631
or
Output
capacitance
VGE =0 V,
VCE =10 V
f =1 MHz
nF
100
150
75
Reverse
P611)
transfer
Cres
–
1.2
–
capacitance
M232
M233
100
150
150
200
200
300
300
300
450
225
300
450
ton
tr
–
–
–
–
–
–
–
–
–
–
1.2
0.6
1.0
0.3
–
Turn-on
time
VCC =600 V
IC =100 A
VGE =±15 V
Rg =4.7 Ω
µs
toff
tf
–
Turn-off
time
–
Tj =25°C
2.0
2.0
1.8
1.8
VF
(Terminal)
M234
M235
Diode
forward
voltage
IF =
100 A
Tj =125°C
Tj =25°C
Tj =125°C
–
V
–
VF
(Chip)
–
M238
Reverce
recovery time
trr
IF =100 A
–
–
0.35 µs
Large
capacity
module
U-series IGBT Modules (1,200 V)
117
Fig.8 Catalogue of packages of 1,200 V U-series
PIM
6 in 1
7 in 1
2 in 1
EP2
PC3
HEP2
M232
122
110
16
16
16
107.5
107.5
M5
93
92
EP3
Large capacity module
HEP3
M233
M6
122
110
122
U
V
W
92
– 50 +
50+
50+
–
–
17
162
22
Small PIM1
M631
M235
118
57
B
P
N
108
U
V
W
Small PIM2
M238
65.6
110
3. Features of the New FWDs
As IGBT switching speeds have increased, the
accompanying vibration at the time of switching has
become a significant problem. Fuji Electric succeeded
in realizing soft recovery to suppress the vibration
even at a high di/dt by optimizing the surface
structure and bulk impurities profile of the FWDs (free
wheeling diodes) (Fig. 6).
Fig.9 Correlation among 1,200 V U-series
Rated
5A
10A 15A 25A 35A
(5.5kW)
50A 75A 100A 150A 200A 300A 450A
600A
current
(11kW)
(22kW)
(40kW)
(75kW)
Series
Small
Small PIM
EP2/HEP2
PIM
PIM
EP3/HEP3
Moreover, a newly developed FDW has been made
suitable for parallel operation by optimizing a lifetime
killer to achieve a positive temperature coefficient of
the output characteristics (Fig. 7).
6 in 1
New PC3 with a
thermal sensor
(6 in 1)
M631 with a
thermal sensor
(7 in 1)
Large capacity
module
(6 in 1)
4. 1,200 V U-series IGBT Modules and Character-
istics
2 in 1
/1 in 1
M232
M238
M233 M235
M138
PIM/
6 in 1
For vector
control
EP
New PC (with
(N-line open) shunt resistance)
Characteristics of 1,200 V U-series IGBT modules
and an overview of U-series are presented in Tables 1
118
Vol. 48 No. 4 FUJI ELECTRIC REVIEW
and 2, respectively. A catalog of packages available in
this series is shown in Fig. 8 and the correlation among
the 1,200 V U-series IGBT modules is shown in Fig. 9.
smaller size and lower loss equipment.
Fuji Electric intends to continue to work toward
realizing higher performance and higher reliability
devices and to contribute to the development of power
electronics.
5. Conclusion
An overview of the 1,200 V U-series IGBT modules
has been presented. The IGBTs of this series are
extremely low loss devices and we believe they will
make important contributions to the realization of
Reference
(1) Laska, T. et al. The Field Stop IGBT (FS IGBT) ——
A New Power Device Concept with a Great Improve-
ment Potential. Proc. 12th ISPSD. 2000, p 355-358.
U-series IGBT Modules (1,200 V)
119
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