7MBR50VZ120-50 [FUJI]

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-32;
7MBR50VZ120-50
型号: 7MBR50VZ120-50
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-32

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文件: 总8页 (文件大小:499K)
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7MBR75GE060

IGBT(600V/75A/PIM)

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133 FUJI

7MBR75GE-060

7 PIM IGBT

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12 ETC

7MBR75SB060

IGBT(600V/75A/PIM)

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192 FUJI

7MBR75SB060

IGBT MODULE

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91 FUJI

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33 ETC

7MBR75SB060_10

IGBT MODULE

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16 FUJI

7MBR75SB060-01

IGBT Module

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72 FUJI

7MBR75SD060

PIM/Built-in converter with thyristor and brake (600V / 75A / PIM)

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128 FUJI

7MBR75U2B060

IGBT MODULE (U series) 600V / 75A / PIM

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81 FUJI

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19 ETC

7MBR75U4B120

Power Integrated Module

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277 FUJI

7MBR75U4B120-50

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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16 FUJI

7MBR75UB060

Insulated Gate Bipolar Transistor,

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0 FUJI

7MBR75UB120

IGBT MODULE (U series) 1200V / 75A / PIM

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70 ETC

7MBR75UB120

IGBT MODULE (U series) 1200V / 75A / PIM

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159 ETC