ESAD92-02R [FUJI]
SILICON DIODE; 硅二极管
| 型号： | ESAD92-02R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SILICON DIODE |
| 文件： | 总12页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S P E C I F I C AT I O N
Device Name ： SILICON DIODE
Type Name
Spec. No.
： ESAD92-02R
： MS5D3000
D A T E
N A M E
Fuji Electric Device Technology Co.,Ltd.
DRAWN
FEB.-20-‘07
FEB.-20-‘07
CHECKED
MS5D3000 1/12
CHECKED FEB.-20-‘07
H04-004-07b
Revised Records
Classi-
fication
Applied
date
Date
Ind.
Content
Drawn
Checked
Approved
FEB.-20
Issued
date
Enactment
―
――――――
-2007
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 2/12
H04-004-06b
1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
ESAD92-02R
2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS
(1) Out view is shown
(2) Marking is shown
MS5D3000
MS5D3000
9/12
9/12
It is marked to type name or abbreviated type name, polarity and Lot No.
(3) Molding resin
Epoxy resin
(4) Characteristics is shown
UL:V-0
MS5D3000
10/12～12/12
Bar Code Label of EIAJ C-3 Specification. Indispensable description items are shown as below.
(1) Type Name
(2) Production Code
(3) Quantity
(4) Lot №(Date code)
(5) Company Code
3. RATINGS
3.1 MAXIMUM RATINGS
(at Ta=25℃ unless otherwise specified.)
ITEM
SYMBOL
VRRM
CONDITIONS
RATINGS
200
UNITS
V
Repetitive peak reverse voltage
50Hz Square wave duty =1/2
Tc = 115℃
Average output current
Io
IFSM
Tj
20 *
100
A
A
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Sine wave, 10ms 1shot
150
℃
℃
Tstg
-40～＋150
* Out put current of center tap full wave connection.
**Rating per element
3.2 ELECTRICAL CHARACTERISTICS
(at Ta=25℃ unless otherwise specified.)
ITEM
SYMBOL
CONDITIONS
IF = 10 A
MAXIMUM
0.95
UNITS
V
Forward voltage ***
Reverse current ***
Reverse recovery time***
Thermal resistance
VF
IR
VR = VRRM
200
μA
μs
trr
IF=0.1A,IR=0.2A,Irec=0.05A
Junction to case
0.04
Rth(j-c)
1.5
℃/W
*** Rating per element
3.3 MECHANICAL CHARACTERISTICS
Mounting torque
Recommended torque
0.4～0.6
N･m
Approximate mass
5.5
g
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 3/12
H04-004-03a
4. TEST AND INSPECTION
4.1 STANDARD TEST CONDITION
Standard test condition is Ta=25℃、65%R.H.
If judgment is no doubt, the test condition is possible to test in normal condition
Ta=5～35℃、48～85%R.H.
4.2 STRUCTURE INSPECTION
It inspect with eye and measure, Item 2 shall be satisfied.
4.3 FORWARD AND REVERSE CHARACTERISTICS
It inspect on the standard condition, Item 3.2 shall be satisfied.
4.4 TEST
Reference
Test
Standard
EIAJ
Acceptance
number
Sampling
number
Test
No.
Testing methods and Conditions
Items
ED4701
1
Terminal
Strength
(Tensile)
Terminal
Strength
(Bending)
Mounting
Strength
Vibration
Pull force : 25N
EIAJ
ED4701/401
method 1
Force maintaining duration :10±1s
5
2
Load force : 10N
EIAJ
ED4701/401
method 3
Number of times : 2times(90deg./time)
5
5
3
4
Screwing torque value:(M3) : 50±10N・cm EIAJ
ED4701/402
method 2
Frequency : 100Hz to 2kHz
Acceleration : 100m/s2
EIAJ
ED4701/403
test code D
5
5
Sweeping time : 4min./1 cycle
4times for each X, Y&Z directions.
Peak amplitude : 15km/s2
Duration time : 0.5ms
5
6
Shock
EIAJ
ED4701/404
test code D
(0 : 1)
3times for each X, Y&Z directions.
Solder : Sn-37Pb
EIAJ
ED4701/303
test code A
Solder ability 1
Solder temp. : 235±5℃
5
Immersion time : 5±0.5s
Apply to flux
Solder ability 2
Solder : Sn-3Ag-0.5Cu
Solder temp. : 245±5℃
5
5
Immersion time : 5±0.5s
Apply to flux
7
Resistance to
Soldering
Heat
Solder temp. : 260±5°C
Immersion time : 10±1s
Number of times : 1times
EIAJ
ED4701/302
test code A
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 4/12
H04-004-03a
Reference
Standard
Test
No.
Test
Sampling
number
Acceptance
number
Testing methods and Conditions
Items
EIAJ ED4701
EIAJ
ED4701/201
1
High Temp.
Storage
Temperature :Ｔstg max
Test duration : 1000h
Temperature :Ｔstg min
22
22
2
3
Low Temp.
Storage
EIAJ
ED4701/202
Test duration : 1000h
Temperature
Humidity
Storage
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
EIAJ
ED4701/103
test code C
22
22
4
5
6
Temperature
Humidity
Bias
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VRRM× 0.8
Test duration : 1000h
EIAJ
ED4701/103
test code C
Unsaturated
Pressurized
Vapor
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
EIAJ
ED4701/103
test code F
22
22
Temperature
Cycle
High temp. side : Tstg max
Room temp. : 5～35℃
(0 : 1)
EIAJ
ED4701/105
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
7
Thermal
Shock
EIAJ
ED4701/307
test code A
22
8
9
Steady state
Operating
life
Rated load
22
22
22
Test duration : 1000h
Intermittent
Operating
life
Tj=Tjmax ～50℃
EIAJ
ED4701/106
3min ON, 3min OFF
Test duration : 10000cycles
Temperature : Ta=100 °C
Bias Voltage : VR=VRRM duty=1/2
Test duration : 1000h
10 High Temp.
Reverse
EIAJ
ED4701/101
Bias
Failure Criteria
USL : Upper specification Limit
IR ≦USL x 5
VF≦USL x 1.1
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 5/12
H04-004-03a
5.Cautions
・Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to
make your design fail-safe, flame retardant, and free of malfunction.
・The products described in this specification are intended for use in the following electronic and
electrical equipment which has normal reliability requirements.
・Computers ・OA equipment ・Communications equipment (Terminal devices)
・Measurement equipment
・Electrical home appliances
・Machine tools
・AV equipment
・Personal equipment
・Industrial robots etc.
・The products described in this Specification are not designed or manufactured to be used in equipment
or systems used under life-threatening situations. If you are considering using these products in the
equipment listed below, first check the system construction and required reliability, and take adequate
safety measures such as a backup system to prevent the equipment from malfunctioning.
・Transportation equipment (automobiles, trains, ships, etc.)
・Backbone network equipment
・Traffic-signal control equipment
・Submarine repeater equipment
・Gas alarms, leakage gas auto breakers
・Burglar alarms, fire alarms, emergency equipment ・Medical equipment
・Nuclear control equipment etc.
・Do not use the products in this Specification for equipment requiring strict reliability such as (but not
limited to):
・Aerospace equipment ・Aeronautical equipment
6.Warnings
・The Diodes should be used in products within their absolute maximum rating (voltage, current,
temperature, etc. ). The diodes may be destroyed if used beyond the rating.
・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
・Use the Diodes within their reliability and lifetime under certain environments or conditions.
The Diodes may fail before the target lifetime of your products if used under certain reliability
conditions.
・You must design the Diodes to be operated within the specified maximum ratings (voltage, current,
temperature, etc. ) to prevent possible failure or destruction of devices.
・Consider the possible temperature rise not only for the junction and case, but also for the outer leads.
・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to
avoid electric shock and burns.
・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame.
Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke
or flame in case the Diodes become even hotter during operation.
Design the arrangement to prevent the spread of fire.
・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas.
(hydrogen sulfide, sulfurous acid gas.)
・The Diodes should not used in an irradiated field since they are not radiation proof.
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 6/12
H04-004-03a
Installation
・Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Table 1: Solder temperature and duration
Solder
temperature
260±5℃
Method
Flow
Soldering iron
Duration
10±1sec
3.5±0.5sec
350±10℃
・The immersion depth of the lead should basically be up to the lead stopper and the distance
should be a maximum of 1.5mm from the device.
・When flow-soldering, be careful to avoid immersing the package in the solder bath.
・Refer to the following torque reference When mounting the device on a heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will
increase the thermal resistance, both of which conditions may destroy the device.
Table 2:Recommended tightening torque
Package style
Screw
Recommended tightening torque
TO-3P
M3
0.4～0.6N・m
・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep
the tightening torque within the limits of this specification.
・Improper handling may cause isolation breakdown leading to a critical accident.
・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is
important to evenly apply the compound and to eliminate any air voids.
Storage
・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45
to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on
the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is
steady.
・The Diodes should not be stored on top of each other, since this may cause excessive external
force on the case.
・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may
cause presoldered connections to go fail during later processing.
・The Diodes should be stored in antistatic containers or shipping bags.
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 7/12
H04-004-03a
7.Appendix
・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated
Diphenyl Ether ) , substances.
・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘Clean Air
Act of US’ law.
・If you have any questions about any part of this Specification, please contact Fuji Electric Device
Technology or its sales agent before using the product
・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in
accordance with the instructions.
・The application examples described in this specification are merely typical uses of Fuji Electric
DeviceTechnology products.
This specification does not confer any industrial property rights or other rights, nor constitute a
license for such rights.
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 8/12
H04-004-03a
Sn-Cu dipping(Pb＜1000ppm)
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 9/12
H04-004-03a
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
104
103
102
101
100
10-1
100
Tj=150°C
Tj=125°C
Tj=150°C
Tj=25°C
10
Tj= 25°C
1
0.1
0
50
100
150
200
250
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation (max.)
Reverse Power Dissipation (max)
14
12
10
8
2.6
Square wave =60°
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DC
360°
360°
Square wave =120°
Sine wave =180°
VR
I0
λ
α
Square wave =180°
DC
=180°
6
4
2
Per 1element
0
0
100
200
0
2
4
6
8
10
12
14
VR Reverse Voltage (V)
Io Average Output Current (A)
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 10/12
H04-004-03a
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (typ.)
200
190
180
170
160
150
140
130
120
110
100
90
100
DC
Sine wave =180°
Square wave =180°
Square wave =120°
80
70
Square wave =60°
60
50
10
0
5
10
15
20
25
30
10
100
Io Average Output Current (A)
VR Reverse Voltage (V)
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
100
10
1
10
Number of Cycles at 50Hz
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 11/12
H04-004-03a
Transient Thermal Impedance (max.)
Rth j-c:1.5℃/W
100
10-1
10-2
10-1
100
101
102
t
Time (sec)
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 12/12
H04-004-03a
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