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FMB80N10T2 [FUJI]

Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, TPACK-3;

FMB80N10T2


元器件型号：	FMB80N10T2
生产厂家：	FUJI ELECTRIC
描述和应用：	Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, TPACK-3 开关脉冲晶体管
PDF文件：	总22页 (文件大小：460K)
下载文档：	下载PDF数据表文档文件
型号参数：FMB80N10T2参数

FMB857B

PNP Epitaxial Silicon Transistor

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31 FAIRCHILD

FMB857B

256Mb F-die DDR SDRAM Specification

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29 SAMSUNG

FMB-90.064583MHZ-LNM00030

Series - 3Rd Overtone Quartz Crystal, 90.064583MHz Nom, LEAD FREE, CERAMIC, SMD, 4 PIN

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0 FOX

FMB-90.064583MHZ-LNM00030

Series - 3Rd Overtone Quartz Crystal, 90.064583MHz Nom, LEAD FREE, CERAMIC, SMD, 4 PIN

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0 FOX

FMBA06

NPN Multi-Chip General Purpose Amplifier

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29 FAIRCHILD

FMBA0656

NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package

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33 FAIRCHILD

FMBA0656D87Z

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA0656L99Z

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA0656S62Z

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA06D84Z

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA06D87Z

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA14

NPN Multi-Chip Darlington Transistor

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24 FAIRCHILD

FMBA14D84Z

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA14S62Z

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA56

PNP Multi-Chip General Purpose Amplifier

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23 FAIRCHILD

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