FMD03N60G [FUJI]
Power Field-Effect Transistor, 3A I(D), 600V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN;
| 型号： | FMD03N60G |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor, 3A I(D), 600V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总22页 (文件大小：568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
Power MOSFET
Device Name
Type Name
Spec. No.
Date
:
:
:
:
FMU03N60G,FMD03N60G
MS5F06391
October-27 -2005
NAME
APPROVED
DATE
Fuji Electric Device Technology Co.,Ltd.
DRAWN
CHECKED
CHECKED
Oct.-27-'05
Oct.-27 -'05
Oct .-27 -'05
1/ 22
MS5F06391
H04-004-05
Revised Records
Date
Classification
enactment
Index
Content
Drawn Checked Checked
Approved
Oct .-27
2005
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
2/22
H04-004-03
1.Scope
This specifies Fuji Power MOSFET FMU03N60G,FMD03N60G
N-Channel enhancement mode power MOSFET
for Switching
2.Construction
3.Applications
4.Outview and Standard packing Specification
Standard packing
Specification
Type Name
FMU03N60G
FMD03N60G
Package Type
Out view
I-Pack(TO-251SL)
D-pack(TO-252)
page 9/22
MS5Q0060
MS5Q0061
page 10/22
5.Absolute Maximum Ratings at Tc=25C (unless otherwise specified)
Description
Symbol
VDS
Characteristics
Unit
V
Remarks
600
600
± 3
Drain-Source Voltage
VDSX
ID
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
A
IDP
± 12
± 30
A
VGS
Gate-Source Voltage
V
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
IAR
3
A
Note*1
Note*2
Note*3
EAS
EAR
237.3
9.0
mJ
mJ
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
dVDS/dt
dV/dt
20
VDS≦600V
kV/μs
kV/μs
5
90
Note*4
Tc=25℃
Ta=25℃
PD
Maximum Power Dissipation
W
1.04
Tch
Operating and Storage
Temperature range
150
℃
℃
Tstg
-55 to +150
6.Electrical Characteristics at Tc=25C (unless otherwise specified)
Static Ratings
Description
Drain-Source
Symbol
Conditions
ID=250μA
min.
600
typ.
-
max.
-
Unit
V
BV
VGS=0V
Breakdown Voltage
Gate Threshold
Voltage
DSS
ID=250μA
VDS=VGS
VGS(th)
3.0
-
-
-
5.0
25
V
VDS=600V
VGS=0V
Tch=25°C
Zero Gate Voltage
Drain Current
μA
VDS=480V
VGS=0V
I
Tch=125°C
-
-
250
DSS
VGS= ± 30V
VDS=0V
Gate-Source
I
Leakage Current
Drain-Source
-
-
-
100
2.8
nA
GSS
ID=1.5A
R (on) VGS=10V
On-State Resistance
2.25
Ω
DS
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
3/22
H04-004-03
Dynamic Ratings
Description
Symbol
Conditions
ID=1.5A
min.
typ.
max.
Unit
S
Forward
g
VDS=25V
VDS=25V
VGS=0V
f=1MHz
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
1.5
3.0
330
50
-
fs
Ciss
-
-
500
75
Coss
2.5
5.0
pF
Capacitance Crss
td(on)
-
-
-
-
-
-
-
-
Vcc=300V
VGS=10V
ID=1.5A
11.0
5.0
23
18.0
7.5
35
Turn-On Time
tr
td(off)
tf
ns
RG=10Ω
Vcc=300V
ID=3.0A
Turn-Off Time
10
15
QG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
13.0
5.5
2.8
20.0
8.5
4.2
QGS
QGD
nC
VGS=10V
Reverse Diode
Description
Symbol
Conditions
min.
typ.
0.90
500
2.30
max.
Unit
V
IF=3.0A
VGS=0V
IF=3.0A
VGS=0V
Diode Forward
On-Voltage
V
SD
Tch=25℃
-
-
-
1.50
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
-
-
ns
-di/dt=100A/μs
Tch=25°C
μC
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
1.389
120
Unit
℃/W
℃/W
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
Note *1 : Tch≦150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25℃,IAS=1.2A,L=302mH,Vcc=60V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 21/22.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 22/22.
Note *4 : IF≦-ID,-di/dt=50A/μs,Vcc≦BVDSS,Tch≦150℃
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
4/22
H04-004-03
Fig.1 Test circuit
L
50Ω
D.U.T
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
BVDSS
IDP
VDS
ID
0
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
5/22
H04-004-03
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
8.1) Preprocessing condition of moisture soaking and soldering heat stress.
A) I-Pack (TO-251SL) : Throughhole package
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
B) D-Pack (TO-252) : SMD package
Test items required without fail.
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (IR-ray Reflow ,255±5°C(260°Cmax.),10±1sec,2 times)
* Fig.3 shows the temperature profile of IR-ray reflow.
8.2) Failure Criteria
Symbols
Failure Criteria
Unit
Item
Breakdown Voltage
Lower Limit
Upper Limit
-----
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
LSL
-----
-----
LSL
-----
LSL
-----
V
A
A
V
S
V
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
USL
USL
USL
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
USL
-----
USL
VSD
Marking
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
6/22
H04-004-03
8.3) Mechanical test
Applied package
I-Pack D-Pack
(TO-251SL) (TO-252)
Test Test
Testing methods and Conditions
Reference
Standard
No. Items
Through -
hole
SMD
1 Terminal
Strength
Pull force
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
EIAJ
(Tensile)
ED4701/400
method 401
○
×
15
15
apply
not apply
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
Load force
2 Terminal
Strength
TO-220,TO-220F : 5N
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
EIAJ
(Bending)
ED4701/400
method 401
○
×
apply
not apply
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
Screwing torque value: (M3)
(0:1)
3 Mounting
Strength
EIAJ
・
×
×
TO-220,TO-220F : 40±10N cm
ED4701/400
method 402
15
15
15
15
・cm
TO-3P,TO-3PF,TO-247 : 50±10N
not apply not apply
・
TO-3PL : 70±10N cm
4 Vibration
5 Shock
frequency : 100Hz to 2kHz
Acceleration : 200m/s2
Sweeping time : 4min.
EIAJ
○
○
ED4701/400
method 403
apply
apply
48min. for each X,Y&Z directions.
Peak amplitude: 15km/s2
EIAJ
○
○
Duration time : 0.5ms
ED4701/400
method 404
3times for each X,Y&Z directions.
Solder temp. : 2455C
Immersion time : 50.5sec
apply
apply
6 Solderability
(Through-hole
○
○
package) Solder alloy : Sn-Ag
-----
Each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the lead end of body side.
Solder temp. : 2605C
Immersion time : 101sec
Number of times : 1times
Only the lead terminals dipping.
Solder temp. : 2555C
apply
apply
7 Resistance to
Soldering Heat
EIAJ
○
×
ED4701/300
method 302
15
15
apply
not apply
8 Resistance to
Soldering Heat
EIAJ
Immersion time : 10±1sec
Number of times : 2times
IR-ray Reflowing
×
○
ED4701/400
method 301
not apply
apply
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
7/22
H04-004-03
8.4)Climatic test and Endurance test
Test Test
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
No. Items
1 High Temp.
Temperature : 150+0/-5°C
Test duration : 1000hr
EIAJ
22
22
Storage
ED4701/200
method 201
EIAJ
2 Low Temp.
Storage
Temperature : -55+5/-0°C
Test duration : 1000hr
ED4701/200
method 202
EIAJ
3 Temperature
Humidity
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
ED4701/100
method 103
EIAJ
22
22
Storage
4 Temperature
Humidity
BIAS
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
ED4701/100
method 103
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48hr
(0:1)
5 Unsaturated
Pressurized
Vapor
EIAJ
ED4701/100
method 103
22
22
22
High temp.side : 150 5 C/30min.
Low temp.side : -55 5 C/30min.
6 Temperature
Cycle
EIAJ
ED4701/100
method 105
～
RT : 5°C
35°C/5min.
Number of cycles : 100cycles
7 Thermal Shock
Fluid : pure water(running water)
High temp.side : 100+0/-5 C
EIAJ
Low temp.side : 0+5/-0C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
ED4701/300
method 307
Tc=90degree
8 Intermittent
Operating
Life
EIAJ
Tch Tch(max.)
ED4701/100
method 106
EIAJ
22
22
Test duration : 10000 cycle
Temperature : Tch=150+0/-5°C
Bias Voltage : +VGS(max)
9 HTRB
(Gate-source)
(0:1)
ED4701/100
Test duration : 1000hr
Temperature : Tch=150+0/-5°C
Bias Voltage : 500V
method 101
EIAJ
10 HTRB
(Drain-Source)
ED4701/100
method 101
22
Test duration : 1000hr
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
8/22
H04-004-03
OUT VIEW
+0.1
-0.2
+0.08
-0.1
6.6
2.3
0.5
+0.12
-0.13
5.34
±
0.1
min.
4.4
4
Type name
See Note:1.
Lot No.
C2
See Note:1.
See Note:2.
+0.3
-0.07
0.84
1
2
3
±0.12
±0.1
0.76
0.51
0.5
1
0.1
±
2.286 2.286
CONNECTION
1
2
3
GATE
DRAIN
SOURCE
4
1
2
3
JEDEC:TO-251 Short Lead
equivalent
Note : 1. Marking Infomation
Type Name : 03N60G
Lot No. : YMNNN
Y : Year Code
M : Month Code
DIMENSIONS ARE IN MILLIMETERS.
NNN : Lot Serial Number
Note : 2. Country of origin mark.
No mark (Blank) is Made in JAPAN.
"C2" is Made in CHINA.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
9/22
H04-004-03
OUT VIEW
+0.1
-0.2
+0.08
-0.1
6.6
2.3
0.5
+0.12
-0.13
5.34
±0.1
4
Type name
See Note:1.
Fig. 1.
Lot No.
See Note:1.
2
C
0～0.127
See Note:2.
1
2
3
+0.3
-0.07
0.84
± 0.1
0.5
±0.12
0.76
1
2.286 2.286
CONNECTION
Fig. 1.
+0.12
GATE
1
2
3
5.34
-0.13
min.
4.4
DRAIN
SOURCE
4
JEDEC:TO-252
equivalent
DIMENSIONS ARE IN MILLIMETERS.
Note : 1. Marking Infomation
Type Name : 03N60G
Lot No. : YMNNN
Y : Year Code
M : Month Code
NNN : Lot Serial Number
Note : 2. Country of origin mark.
No mark (Blank) is Made in JAPAN.
"C2" is Made in CHINA.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
10/22
H04-004-03
9. Cautions
･ Although Fuji Electric is continually improving product quality andreliability, asmall percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safetymeasures to prevent the equipment from causing
physical injury, fire, or other problem in caseany of the products fail. It is recommended to makeyour design
fail-safe, flame retardant, and freeof malfunction.
･ The products described in this Specificationare intended for usein the following electronic and electrical
equipment which has normal reliability requirements.
･ Computers
･ OA equipment
･ AV equipment
･ Communications equipment(Terminal devices)
･ Measurement equipment
･ Machine tools
･ Personal equipment ･ Industrial robots
･ Electrical home appliances etc.
･ The products described in this Specificationare not designed or manufactured to be used in equipment or
systems used under life-threatening situations. If you are considering using these products in theequipment
listed below, first check the system construction and required reliability, and take adequate safetymeasures
such as a backup system to prevent the equipment from malfunctioning.
･ Backbonenetwork equipment
･ Traffic-signal control equipment
･ Submarine repeater equipment
･ Medical equipment
･ Transportation equipment (automobiles, trains, ships, etc.)
･ Gas alarms, leakage gas auto breakers
･ Burglar alarms, fire alarms, emergency equipment
･ Nuclear control equipment etc.
･ Do not use the products in this Specificationfor equipment requiring strict reliability such as(but not limited to):
･ Aerospaceequipment ･ Aeronautical equipment
10. Warnings
･ The MOSFETs shouldbe used in products within their absolute maximum rating(voltage, current, temperature,
etc.).
･ The MOSFETs may bedestroyedif used beyond the rating.
･ We only guarantee thenon-repetitive and repetitiveAvalanche capability and not for the continuousAvalanche
capability which can beassumed as abnormal condition .Pleasenote the devicemay be destructed from the
Avalanche over the specifiedmaximum rating.
･ The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment
from causing secondary destruction (ex. fire, explosion etc…).
･ Use the MOSFETs within their reliability and lifetime under certainenvironments or conditions. The MOSFETs
may fail before the target lifetimeof your products if used under certain reliability conditions.
･ Be careful when handling MOSFETs for ESD damage. (It is an important consideration.)
･ When handling MOSFETs, hold them bythecase (package) anddon’t touch the leadsand terminals.
･ It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and
tablemats.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
11/22
H04-004-03
･ Before touching a MOSFETterminal, Dischargeany static electricity from your body and clothes by grounding
out through ahigh impedance resistor (about 1M)
･ When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering
bath througha low impedance resistor.
･ You must design the MOSFETs to be operated within the specifiedmaximum ratings(voltage, current,
temperature, etc.) to prevent possible failure or destruction of devices.
･ Consider thepossible temperature rise not only for the channel and case, but also for the outer leads.
･ Do not directly touch theleads or package of theMOSFETs while power is suppliedor during operation in order
to avoid electric shock and burns.
･ The MOSFETs aremade of incombustiblematerial. However, if a MOSFETfails, it may emit smoke or flame.
Also, operating the MOSFETs near any flammableplace ormaterial may cause theMOSFETs to emit smoke
or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the
spread of fire.
･ The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive
gas(hydrogen sulfide, sulfurous acidgas etc.)
･ The MOSFETs should not used in an irradiatedenvironment since they are not radiation-proof.
Installation
･ Soldering involves temperatures which exceed the device storage temperature rating. To avoiddevice damage
and to ensure reliability, observe the following guidelines from the quality assurancestandard.
Solderingmethods
Soldering Methods
Wave
Wave
Soldering
iron
Packages
Infrared
Reflow
Air
Soldering
(Full dipping) (Onlyterminal)
Soldering
Reflow
(Re-work)
I-Pack
U
P
U
U
P1
(TO-251SL)
T-Pack (L)
TO-220
TO-220F
TO-3P
U
U
U
U
U
U
U
U
P
P
P
P
P
P
P
P
U
U
U
U
U
U
U
U
U
U
U
U
U
U
U
U
P1
P1
P1
P1
P1
P1
P1
P1
Through
hole
package
TO-3PF
TO-247
TO-3P
TO-3PL-7
D-Pack
U
U
P2
P2
U
(TO-252)
T-Pack(S)
T-Pack(SJ)
TFP
SMD
U
U
U
U
U
U
P2
P2
P2
P2
P2
P2
U
U
U
package
P: Possible P1: Possible (Only 1 time) P2: Possible(Only 2 times) U: Unable
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
12/22
H04-004-03
Solder temperature and duration
Package type
Methods
Soldering Temp. & Time
Note
Solder dipping
Soldering iron
Solder dipping
Soldering iron
A
B
260±5℃, 10±1sec
Through hole
package
350±10℃, 3.5±0.5sec
230℃，50sec
Fig.3 shows the
temperature profile
of IR-ray reflow.
SMD Package
Reflow
260℃，10sec
Package surface and
Peak Temp. & Time
300
250
200
150
100
260℃(peak)
≦10sec
4.5℃/sec(max.)
冷却/Post Cooling
-5℃/sec(max.)
予熱/Pre-heat
150～180℃
60～120sec
≧230℃
50sec(max.)
6℃/sec(max.)
50
0
時間/time [sec]
Fig.3 RecommendedReflow profile “lead-free soldering”
･ The immersion depth of the lead should basically be up to the lead stopper and thedistance should be a
maximum of 1.5mm from the device.
･ When flow-soldering, becareful to avoid immersing the package in the solder bath.
･ Refer to thefollowing torque referencewhen mounting the device on a heat sink. Excess torqueapplied to the
mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of
which conditions may destroy the device.
Table 1: Recommended tightening torques. (Through holepackage)
Package style
TO-220
Screw
Tightening torques
Note
M3
30 – 50 Ncm
TO-220F
TO-3P
flatness : < =±30m
roughness : <=10m
Plane off theedges :
C<=1.0mm
TO-3PF
TO-247
M3
M3
40 – 60 Ncm
60 –80 Ncm
TO-3PL
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
13/22
H04-004-03
･ The heat sinkshould have a flatnesswithin±30μm and roughness within10μm.Also, keep thetightening
torque within the limits of this specification.
･ Improper handling maycause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended planeoff the edgeis C<1.0mm)
･ We recommend the useof thermal compound tooptimize the efficiency of heat radiation. It is important to
evenly apply the compound and to eliminate anyair voids.
Storage
･ The MOSFETs must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45 to 75%.
･ If the storagearea is very dry, a humidifier may be required. In such a case, use only deionizedwater or boiled
water, since the chlorinein tap watermay corrode the leads.
･ The MOSFETs should not be subjected to rapidchanges intemperature to avoid condensation on the surface
of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.
･ The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the
case.
･ The MOSFETs should bestored with the lead terminals remaining unprocessed. Rust may cause presoldered
connections tofail during later processing.
･ The MOSFETs should bestored in antistatic containers or shipping bags.
11) Compliance with pertaining to restricted substances
11-1) Compliance with the RoHS Regulations and Exemptions
This product will be fullycompliant with the RoHS directive.
Five out of six substances below which are regulated by the RoHS directive in Europe are not included inthis
product. The exceptionis only lead.
The RoHS directive has some exemptions. The followingrelates to this product :
Lead inhighmelting temperature type solders (Sn-Pb solder alloywhich contains more than 85%)
This product is used to the highmelting temperature typesolders (Sn-Pb solders) for die-bonding.
Moreover, the terminals used lead-free solder.
* The six substances regulated by the RoHS Directive are:
Lead, Mercury, Hexavalent chromium, Cadmium, PBB (polybrominated biphenyls),
PBDE (polybrominated diphenyl ethers).
11-2) Compliance with the calss-1 ODS and class-2 ODS. (ODS: Ozone-Depleting Substances)
This products does not contain and used the“Law concerning the Protection of the Ozone Layer through
the Control of SpecifiedSubstances and Other Measures(JAPAN)”, and the Montreal Protocol.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
14/22
H04-004-03
･ If you have any questions about anypart of this Specification, please contact Fuji
Electric or its sales agent before using the product.
･ Neither Fuji nor its agents shall be held liable for any injury caused by using the products
not in accordance with the instructions.
･ The application examples described in this specification are merely typical uses of Fuji
Electric products.
･ This specification does not confer any industrial property rights or other rights, nor
constitute a license for such rights.
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
15/22
H04-004-03
Allowable Power Dissipation
PD=f(Tc)
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [C]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
6
20V
10V
7.5V
5
4
3
2
1
0
7.0V
6.5V
6.0V
VGS=
5.5V
0
4
8
12
VDS [V]
16
20
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MS5F06391
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Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
101
100
10-1
10-2
10-3
10-4
3
4
5
6
7
8
9
VGS[V]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
101
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
ID [A]
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Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VGS=
5.5V
6.0V
6.5V
7.0V
7.5V
10V
20V
0
1
2
3
4
5
6
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=1.5A,VGS=10V
8
7
6
5
4
3
2
1
0
max.
typ.
-50
-25
0
25
50
75
100
125
150
Tch [C]
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
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Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
7
6
5
4
3
2
1
0
max.
min.
-50
-25
0
25
50
75
100
125
150
Tch [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3.0A,Tch=25 C
14
12
10
8
Vcc=480V
Vcc=300V
Vcc=120V
6
4
2
0
0
5
10
15
20
Qg [nC]
Fuji Electric Device Technology Co.,Ltd.
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Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
103
102
101
100
Ciss
Coss
Crss
10-1
100
101
102
103
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
101
100
10-1
10-2
10-3
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
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Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
103
102
101
100
tf
td(off)
td(on)
tr
10-1
100
101
ID [A]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=3.0A
300
250
200
150
100
50
IAS=1.2A
IAS=1.8A
IAS=3.0A
0
0
25
50
75
100
125
150
starting Tch [C]
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Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=60V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
102
101
100
10-1
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Fuji Electric Device Technology Co.,Ltd.
MS5F06391
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H04-004-03
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