FMP80N10T2 [FUJI]
Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN;
| 型号： | FMP80N10T2 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总19页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
Device Name
Type Name
Spec. No.
Date
:
:
:
:
Power MOSFET
FMP80N10T2
MS5F6116
Jun.-17-2005
NAME
APPROVED
DATE
Fuji Electric Device Technology Co.,Ltd.
DRAWN
Jun.-17-'05
Jun.-17-'05
a
CHECKED
MS5F6116
1 / 19
CHECKED Jun.-17-'05
H04-004-05
Revised Records
Date
Classification
enactment
Index
Content
Drawn Checked Checked
Approved
Jun.-17
2005
Revised characteristics
curve.
Feb.-22
2006
revise
a
Added to repetitive
avalanche current.
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1.Scope
This specifies Fuji Power MOSFET FMP80N10T2
N-Channel enhancement mode power MOSFET
for Switching
2.Construction
3.Applications
4.Outview
TO-220
Outview See to 8/19 page
5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified)
Description
Symbol
VDS
VDSX
ID
Characteristics
Unit
V
Remarks
100
60
Drain-Source Voltage
V
VGS=-20V
80
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
A
IDP
± 320
+30/-20
A
VGS
V
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
IAS
Note *1
Note *1
Note *2
Note *3
80
40
A
A
IAR
EAS
EAR
728
27
mJ
mJ
Maximum Avalanche Energy
dVDS/dt
dV/dt
20
5
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
VDS100V
kV/s
kV/s
Note *4
270
Tc=25°C
Ta=25°C
PD
Maximum Power Dissipation
W
2.02
Tch
Operating and Storage
Temperature range
150
C
Tstg
-55 to +150
C
6.Electrical Characteristics at Tc=25 C (unless otherwise specified)
Static Ratings
Description
Drain-Source
Symbol
Conditions
min.
100
typ.
-
max.
-
Unit
ID=250 A
BV
VGS=0V
Breakdown Voltage
Gate Threshold
Voltage
V
V
DSS
ID=250 A
V
I
GS(th)
VDS=VGS
VDS=100V
VGS=0V
2.0
-
-
-
4.0
25
Tch=25C
Zero Gate Voltage
Drain Current
A
A
VDS=80V
VGS=0V
Tch=125C
-
-
250
DSS
VGS= +30V / -20V
VDS=0V
Gate-Source
I
Leakage Current
Drain-Source
-
-
-
100
nA
GSS
ID=40A
R
DS(on) VGS=10V
On-State Resistance
10.0
12.8
m
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Dynamic Ratings
Description
Symbol
Conditions
ID=40A
min.
typ.
max.
Unit
S
Forward
g
VDS=25V
VDS=25V
VGS=0V
f=1MHz
Transconductance
15
-
30
6000
740
370
-
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Ciss
9000
1110
555
Coss
-
pF
Capacitance Crss
td(on)
-
-
-
-
-
-
-
-
Vcc=48V
VGS=10V
ID=40A
33
44
49.5
66
Turn-On Time
tr
td(off)
tf
120
60
180
90
ns
RGS=10
Vcc=48V
ID=80A
Turn-Off Time
QG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
120
30
180
45
QGS
QGD
nC
VGS=10V
34
51
Reverse Diode
Description
Symbol
Conditions
min.
typ.
1.00
120
0.52
max.
Unit
V
IF=80A
VGS=0V
IF=80A
VGS=0V
Diode Forward
On-Voltage
V
Tch=25C
-
-
-
1.50
SD
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
-
-
ns
-di/dt=100A/ s
Tch=25C
C
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
0.463
62
Unit
C/W
C/W
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
Note *1 : Tch 150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25 C,IAS=32A,L=853 H,Vcc=48V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/19.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 19/19.
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150C
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Fig.1 Test circuit
L
50Ω
D.U.T
L=853uH
Vcc=48V
Single Pulse Test
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
BVDSS
IDP
VDS
0
ID
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8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
No.
Items
1 Terminal
Strength
Pull force
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
EIAJ
(Tensile)
ED4701/400
method 401
15
15
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
Load force
2 Terminal
Strength
TO-220,TO-220F : 5N
EIAJ
(Bending)
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
ED4701/400
method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
Screwing torque value: (M3)
TO-220,TO-220F : 40±10Ncm
TO-3P,TO-3PF,TO-247 : 50±10Ncm
TO-3PL : 70±10Ncm
3 Mounting
Strength
EIAJ
(0:1)
ED4701/400
method 402
15
15
15
15
15
4 Vibration
frequency : 100Hz to 2kHz
Acceleration : 200m/s2
Sweeping time : 4min.
EIAJ
ED4701/400
method 403
48min. for each X,Y&Z directions.
Peak amplitude: 15km/s2
Duration time : 0.5ms
5 Shock
EIAJ
ED4701/400
method 404
3times for each X,Y&Z directions.
Solder temp. : 235 5 C
6 Solderability
Immersion time : 5 0.5sec
EIAJ
Each terminal shall be immersed in
ED4701/300
the solder bath within 1 to 1.5mm from method 303
the body.
Solder temp. : 260 5 C
7 Resistance to
EIAJ
Soldering Heat Immersion time : 10 1sec
ED4701/300
method 302
Number of times : 1times
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Test Test
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
No.
Items
1 High Temp.
Storage
Temperature : 150+0/-5°C
Test duration : 1000hr
EIAJ
22
22
ED4701/200
method 201
EIAJ
2 Low Temp.
Storage
Temperature : -55+5/-0°C
Test duration : 1000hr
ED4701/200
method 202
EIAJ
3 Temperature
Humidity
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
ED4701/100
method 103
EIAJ
22
22
Storage
4 Temperature
Humidity
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
ED4701/100
method 103
BIAS
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48hr
(0:1)
5 Unsaturated
Pressurized
Vapor
EIAJ
ED4701/100
method 103
22
22
22
6 Temperature
Cycle
High temp.side : 150 5 C/30min.
Low temp.side : -55 5 C/30min.
EIAJ
ED4701/100
method 105
～
RT : 5°C
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
35°C/5min.
High temp.side : 100+0/-5 C
EIAJ
Low temp.side : 0+5/-0 C
ED4701/300
method 307
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
8 Intermittent
Operating
Life
Tc=90degree
EIAJ
TchTch(max.)
ED4701/100
method 106
EIAJ
22
22
Test duration : 3000 cycle
Temperature : Tch=150+0/-5°C
Bias Voltage : +VGS(max)
9 HTRB
(0:1)
(Gate-source)
ED4701/100
Test duration : 1000hr
method 101
EIAJ
10 HTRB
Temperature : Tch=150+0/-5°C
(Drain-Source) Bias Voltage : VDS(max)*1.0
Test duration : 1000hr
ED4701/100
22
method 101
Failure Criteria
Symbols
Failure Criteria
Unit
Item
Breakdown Voltage
Lower Limit
LSL * 1.0
-----
Upper Limit
-----
BVDSS
IDSS
V
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
Marking
USL * 2
USL * 2
USL * 1.2
USL * 1.2
-----
A
A
V
S
V
IGSS
-----
VGS(th)
RDS(on)
gfs
LSL * 0.8
-----
LSL * 0.8
-----
VSD
USL * 1.2
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
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9. Cautions
･ Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor productsmay become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from causing
physicalinjury, fire, or other problem in case anyof the products fail. It is recommended to make your design
fail-safe, flame retardant, and free of malfunction.
･ The productsdescribed in this Specification are intended for use in the following electronic and electrical
equipment which has normal reliability requirements.
･ Computers
･ OAequipment
･ AV equipment
･ Communications equipment(Terminal devices)
･ Measurement equipment
･ Machine tools
･ Personal equipment ･ Industrial robots
･ Electrical home appliances etc.
･ The productsdescribed in this Specification are not designed or manufactured to be used in equipment or
systems used under life-threatening situations. If you are considering using these products in the equipment
listed below, first check the system construction and required reliability, and take adequate safetymeasures
such as a backup system to prevent the equipment from malfunctioning.
･ Backbone network equipment
･ Traffic-signal control equipment
･ Submarine repeater equipment
･ Medical equipment
･ Transportation equipment (automobiles, trains, ships, etc.)
･ Gas alarms, leakage gas auto breakers
･ Burglar alarms, fire alarms,emergencyequipment
･ Nuclear controlequipment etc.
･ Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited
to):
･ Aerospace equipment
･ Aeronautical equipment
10. Warnings
･ The MOSFETs should be used in products within their absolute maximum rating(voltage, current,
temperature, etc.).
･ The MOSFETs maybe destroyed if used beyond the rating.
･ We only guarantee the non-repetitive and repetitiveAvalanche capability and not for the continuous
Avalanche capability which can be assumed asabnormalcondition .Please note the device maybe
destructed from theAvalanche over the specified maximum rating.
･ The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
･ Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The
MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions.
･ Be careful when handling MOSFETs for ESD damage. (Itis an important consideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leadsand terminals.
･ It is recommended that any handling of MOSFETs is done on grounded electricallyconductive floor and
tablemats.
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･ Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes
by grounding out through a high impedance resistor (about 1M)
･ When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron
or soldering bath through a low impedance resistor.
･ You must design the MOSFETs to be operated within the specified maximum ratings(voltage,
current, temperature, etc.) to prevent possible failure or destruction of devices.
･ Consider the possible temperature rise not only for the channel and case, but also for the outer
leads.
･ Do not directly touch the leads or package of the MOSFETs while power is supplied or during
operation in order to avoid electric shock and burns.
･ The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit
smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during
operation. Design the arrangement to prevent the spread of fire.
･ The MOSFETs should not used in an environment in the presence of acid, organic matter, or
corrosive gas(hydrogen sulfide, sulfurous acid gas etc.)
･ The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation
･ Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature
2605 C
Duration
101 seconds
3.50.5 seconds
35010 C
･ The immersion depth of the lead should basically be up to the lead stopper and the distance should
be a maximum of 1.5mm from the device.
･ When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommended soldering condition
Methods
Categories
Packages
Wave
Wave
Infrared
Reflow
Air
Soldering
Soldering
Soldering
Reflow
iron
(Full dipping) (Only terminal)
(Re-work)
Through-Hole
TO-3PL
TO-3P
×
×
×
×
×
×
×
×
◎
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
○
○
○
○
○
○
○
○
◎
TO-247
◎
TO-3PF
TO-220
◎
◎
TO-220F
T-Pack(L)
TO-3PL-7
◎
◎
◎
◎：Possible
○：Limited to 1 time
×：Unable
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･ Refer to the following torque reference when mounting the device on a heat sink. Excess torque
applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance, both of which conditions may destroy the device.
Table 1: Recommended tightening torques.
Package style
TO-220
Screw
M3
Tightening torques
Note
30 – 50 Ncm
TO-220F
TO-3P
flatness : < =±30m
roughness : <=10m
Plane off the edges :
C<=1.0mm
TO-3PF
TO-247
M3
M3
40 – 60 Ncm
60 –80 Ncm
TO-3PL
･ The heat sink should have a flatness within±30μm and roughness within 10μm. Also,keep the tightening
torque within the limits of this specification.
･ Improper handlingmay cause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)
･ We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to
evenly applythe compound and to eliminate anyair voids.
Storage
･ The MOSFETs must be stored at a standard temperature of 5 to 35C and relative humidity of 45 to 75%.
･ If the storage area is very dry,a humidifier maybe required.In such a case, use onlydeionized water or
boiled water, since the chlorine in tap water may corrode the leads.
･ The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.
･ The MOSFETs should not be stored on top of each other, since this may cause excessive external force on
the case.
･ The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust maycause
presoldered connections to fail during later processing.
･ The MOSFETs should be stored in antistatic containersor shipping bags.
11.Appendix
･ This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs(Polybrominated Diphenyl
Ether ) , substances.
･ Thisproducts does not contain Class-I ODS and Class-II ODS substances set force by ‘Clean Air Act of US’
law.
･ If you have any questions about any partof this Specification,please contact Fuji
Electric or its sales agent before using the product.
･ Neither Fuji nor its agentsshall be held liable for any injury caused byusing the products
not in accordance with the instructions.
･ The application examples describedin this specification are merelytypical uses of Fuji
Electric products.
･ This specification does not confer anyindustrial propertyrights or other rights, nor
constitute a license for such rights.
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Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [C]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
140
120
100
80
10V
6V
20V
5V
60
4.5V
40
20
VGS=4.0V
0
0
2
4
6
8
10
VDS [V]
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Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
100
10
1
0.1
0
1
2
3
4
5
VGS[V]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
100
10
1
0.1
0.1
1
10
100
ID [A]
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Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
0.04
0.03
0.02
0.01
0.00
VGS=4V
4.5V
5V
10V
20V
6V
0
10 20 30 40 50 60 70 80 90 100 110 120
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=40A,VGS=10V
0.04
0.03
0.02
0.01
0.00
max.
typ.
-50
-25
0
25
50
75
100
125
150
Tch [C]
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Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
-50
-25
0
25
50
75
100
125
150
Tch [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=80A,Tch=25 C
14
12
10
8
Vcc= 36V
48V
72V
6
4
2
0
0
50
100
150
200
Qg [nC]
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Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
105
104
103
102
101
Ciss
Coss
Crss
10-1
100
101
102
103
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
1000
100
10
1
0.1
0.0
0.5
1.0
1.5
VSD [V]
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Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
103
102
101
100
td(off)
tf
td(on)
tr
10-1
100
101
102
103
ID [A]
Maximum Avalanche Energy vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
100
80
60
40
20
0
Non-Repetitive
(Single Pulse)
Repetitive
0
25
50
75
100
125
150
175
200
starting Tch [C]
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Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=80A
1000
800
600
400
200
0
IAS=32A
IAS=48A
IAS=80A
0
25
50
75
100
125
150
starting Tch [C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
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Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
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Film Capacitor, Polyester, 400V, 10% +Tol, 10% -Tol, 0.047uF, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT
MERITEK
FMPE683J2E
Film Capacitor, Polyester, 250V, 5% +Tol, 5% -Tol, 0.068uF, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT
MERITEK
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