FMR19N60E [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | FMR19N60E |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总5页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMR19N60E
FUJI POWER MOSFET
3
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TO-3PF
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
600
600
±19
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
A
Pulsed Drain Current
DP
±76
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
19
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
799
mJ
mJ
kV/µs
A/µs
15
dV/dt
-di/dt
6.5
Peak Diode Recovery -di/dt
100
Note*5
3.13
150
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
stg
ISO
150
°C
°C
Operating and Storage Temperature range
Isolation Voltage
T
-55 to + 150
2
V
kVrms
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
Unit
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=600V, VGS=0V
DS=480V, VGS=0V
GS=±30V, VDS=0V
600
-
3.5
25
VGS (th)
D
2.5
3.0
-
V
V
V
V
T
ch=25°C
-
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
250
100
0.365
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
nA
Ω
R
DS (on)
I
I
D
=9.5A, VGS=10V
=9.5A, VDS=25V
-
0.31
26
g
fs
D
13
-
S
Ciss
Coss
Crss
td(on)
tr
3600
310
23
5400
465
35
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
26
39
V
V
cc=300V
GS=10V
Turn-On Time
Turn-Off Time
-
13
20
I
D
=9.5A
td(off)
tf
-
150
20
225
30
R
GS=8.2Ω
-
Total Gate Charge
Q
Q
Q
G
-
105
23
160
35
V
cc=300V
=19A
Gate-Source Charge
Gate-Drain Charge
GS
GD
I
D
-
nC
VGS=10V
-
30
-
45
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
AV
L=1.71mH, Tch=25°C
19
-
-
A
V
VSD
I
F
=19A, VGS=0V, Tch=25°C
0.90
0.6
10
1.35
-
trr
-
µs
µC
I
F
=19A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to case
min.
typ.
max.
0.83
40.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Channel to ambient
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=8A, L=22.9mH, Vcc=60V, RG=50Ω
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph.
F
D
1
FUJI POWER MOSFET
FMR19N60E
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
=f(VDS):Duty=0(Single pulse),Tc=25°C
I
D
160
140
120
100
80
102
101
100
10-1
10-2
10-3
t=
1µs
10µs
100µs
1ms
D.C.
60
Power loss waveform :
Square waveform
40
PD
t
20
0
100
101
102
103
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
50
40
30
20
10
0
10
10V
6.0V
5.5V
1
5.0V
VGS=4.5V
20
0.1
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
24
VDS [V]
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
100
10
1
VGS=4.5V
5.0V
5.5V
6.0V
10V
0.1
0.1
1
10
100
0
5
10
15
20
ID [A]
25
30
35
40
ID [A]
2
FUJI POWER MOSFET
FMR19N60E
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
3
2
1
0
1.0
0.8
0.6
0.4
0.2
0.0
max.
typ.
max.
typ.
min.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
102
101
100
14
12
10
8
Ciss
Vcc= 120V
300V
480V
Coss
Crss
6
4
2
0
10-1
100
101
102
103
0
20
40
60
80
100
120
140
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=8.2Ω
103
102
101
100
100
10
1
td(off)
tf
td(on)
tr
0.1
10-1
100
101
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
ID [A]
3
FUJI POWER MOSFET
FMR19N60E
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=19A
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
IAS=19A
800
700
600
500
400
300
200
100
0
IAS=12A
10-1
10-2
10-3
IAS=8A
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
0
25
50
75
100
125
150
starting Tch [°C]
4
FUJI POWER MOSFET
FMR19N60E
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
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Catalog, be sure to obtain the latest specifications.
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may arise from the use of the applications described herein.
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5
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