FMW73N20GSC-K1 [FUJI]
Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN;
| 型号： | FMW73N20GSC-K1 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总19页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
Device Name
Type Name
Spec. No.
Date
:
:
:
:
Power MOSFET
FMW73N20G
MS5F6280
Jul.-29-2005
Fuji Electric Device Technology Co.,Ltd.
Matsumoto Factory
NAME
APPROVED
DATE
DRAWN Jul.-29-'05
CHECKED Jul.-29-'05
Fuji Electric Device Technology Co.,Ltd.
MS5F6280
1 / 19
Jul.-29-'05
CHECKED
H04-004-05
Revised Records
Date
Classification
enactment
Index
Content
Drawn Checked Checked
Approved
Jul.-29
2005
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
2 / 19
1.Scope
This specifies Fuji Power MOSFET FMW73N20G
N-Channel enhancement mode power MOSFET
for Switching
2.Construction
3.Applications
4.Type name and Ordering code
Packaging
Assembly location
Type Name
Ordering code
Country code
FMW73N20G SC
(Blank)
K1
Japan
FMW73N20G
FMW73N20G SC-K1
'Factory A' at Korea
5.Outview and Standard packing Specification
Package
Standard packing
Specification
MS5Q0006
Ordering code
Type
Out view
FMW73N20G SC
TO-247
page 8/19
page 9/19
FMW73N20G SC-K1
MS5Q0064
6.Absolute Maximum Ratings at Tc=25
(unless otherwise specified)
℃
Description
Symbol
VDS
VDSX
ID
Characteristics
Unit
Remarks
200
200
V
V
A
A
V
Drain-Source Voltage
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
73
IDP
± 292
± 30
VGS
Repetitive and Non-repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Note *1
Note *2
Note *3
IAR
73
1115.2
41
A
EAS
EAR
mJ
mJ
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
dVDS/dt
dV/dt
20
5
kV/ s VDS 200V
kV/ s Note *4
410
2.50
Tc=25℃
Maximum Power Dissipation
PD
W
Ta=25℃
Operating and Storage
Temperature range
Tch
150
℃
℃
Tstg
-55 to +150
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
3 / 19
7.Electrical Characteristics at Tc=25℃ (unless otherwise specified)
Static Ratings
Description
Symbol
BVDSS
Conditions
ID=250μA
VGS=0V
min.
200
typ.
-
max.
-
Unit
V
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
μ
ID=250
A
VGS(th)
VDS=VGS
3.0
-
-
-
5.0
25
V
VDS=200V
VGS=0V
Tch=25℃
Zero Gate Voltage
Drain Current
μA
VDS=160V
VGS=0V
℃
Tch=125
IDSS
-
-
250
VGS= ± 30V
VDS=0V
Gate-Source
IGSS
Leakage Current
Drain-Source
-
-
-
100
36
nA
mΩ
S
ID=36.5A
RDS(on) VGS=10V
ID=36.5A
On-State Resistance
Forward
29
gfs
VDS=25V
VDS=75V
VGS=0V
f=1MHz
Transconductance
Input Capacitance
12
-
24
-
Ciss
Coss
3800
5400
Output Capacitance
Reverse Transfer
-
530
35
795
52.5
pF
Capacitance Crss
-
-
-
-
-
-
-
-
Vcc=48V
VGS=10V
ID=36.5A
RG=10Ω
Vcc=100V
ID=73A
td(on)
40
94
60
30
80
30
25
60
141
90
Turn-On Time
tr
td(off)
tf
ns
Turn-Off Time
45
QG
QGS
QGD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
120
45
nC
VGS=10V
38
Reverse Diode
Description
Symbol
VSD
Conditions
min.
-
typ.
max.
1.50
Unit
V
IF=73A
VGS=0V
IF=73A
VGS=0V
Diode Forward
℃
Tch=25
On-Voltage
1.20
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
-
-
300
3.0
-
-
ns
-di/dt=100A/μs
Tch=25℃
μ C
8.Thermal Resistance
Description
Channel to Case
Channel to Ambient
Symbol
min.
typ.
max.
0.305
50
Unit
℃/W
Rth(ch-c)
Rth(ch-a)
℃
/W
Note *1 : Tch150C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25℃,IAS=30A,L=1.98mH,Vcc=48V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Thermal impedance' graph of page 18/18.
Note *4 : IF-ID,-di/dt=50A/μs,VccBVDSS,Tch150℃
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
4 / 19
Fig.1 Test circuit
L
50Ω
D.U.T
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
BVDSS
IDP
VDS
ID
0
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
5 / 19
9.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test
No. Items
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
1 Terminal
Pull force
Strength
(Tensile)
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
EIAJ
ED4701/400
method 401
15
15
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
Load force
TO-220,TO-220F : 5N
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
2 Terminal
Strength
EIAJ
(Bending)
ED4701/400
method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
Screwing torque value: (M3)
TO-220,TO-220F : 40±10N・cm
TO-3P,TO-3PF,TO-247 : 50±10N・cm method 402
TO-3PL : 70±10N・cm
frequency : 100Hz to 2kHz
Acceleration : 200m/s2
Sweeping time : 4min.
48min. for each X,Y&Z directions.
Peak amplitude: 15km/s2
Duration time : 0.5ms
3times for each X,Y&Z directions.
Solder temp. : 245±5°C
Immersion time : 5±0.5sec
Each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.
3 Mounting
Strength
EIAJ
ED4701/400
(0:1)
15
15
15
15
15
4 Vibration
EIAJ
ED4701/400
method 403
5 Shock
EIAJ
ED4701/400
method 404
6 Solderability
-----
7 Resistance to
Soldering Heat
EIAJ
ED4701/300
method 302
Solder temp. : 260±5°C
Immersion time : 10±1sec
Number of times : 1times
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
6 / 19
Test Test
No. Items
Testing methods and Conditions
Reference
Standard
Sampling Acceptance
number number
1 High Temp.
Storage
Temperature : 150+0/-5°C
Test duration : 1000hr
EIAJ
22
22
ED4701/200
method 201
EIAJ
2 Low Temp.
Storage
Temperature : -55+5/-0°C
Test duration : 1000hr
ED4701/200
method 202
EIAJ
ED4701/100
method 103
EIAJ
3 Temperature
Humidity
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
22
22
Storage
4 Temperature
Humidity
ED4701/100
method 103
BIAS
Test duration : 1000hr
5 Unsaturated
Pressurized
Vapor
Temperature : 130±2°C
EIAJ
ED4701/100
method 103
(0:1)
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48hr
22
22
22
6 Temperature
Cycle
High temp.side : 150±5°C/30min.
Low temp.side : -55±5°C/30min.
RT : 5°C ～ 35°C/5min.
EIAJ
ED4701/100
method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C
EIAJ
ED4701/300
method 307
Low temp.side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
8 Intermittent
Operating
Life
EIAJ
ΔTc=90degree
≦
ED4701/100
method 106
EIAJ
22
22
Tch Tch(max.)
Test duration : 3000 cycle
Temperature : Tch=150+0/-5°C
9 HTRB
(Gate-source) Bias Voltage : +VGS(max)
ED4701/100
(0:1)
Test duration : 1000hr
method 101
EIAJ
ED4701/100
10 HTRB
(Drain-Source) Bias Voltage : VDS(max)
Test duration : 1000hr
Temperature : Tch=150+0/-5°C
22
method 101
Failure Criteria
Symbols
Failure Criteria
Unit
Item
Breakdown Voltage
Lower Limit
LSL
Upper Limit
-----
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
V
A
A
V
Ω
S
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
Marking
-----
-----
LSL
-----
USL
USL
USL
USL
LSL
-----
VSD
-----
USL
V
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
7 / 19
Note : 1. Marking Infomation
Type Name : 73N20G
Lot No. : YMNNN
Y : Year Code
M : Month Code
NNN : Lot Serial Number
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
8 / 19
Note : 2. Marking Infomation
Type Name : 73N20G
Lot No. : YMNNN
Y : Year Code
M : Month Code
NNN : Lot Serial Number
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
9 / 19
10. Cautions
･ Although Fuji Electric is continuallyimproving product quality and reliability, a small percentage of
semiconductor productsmay becomefaulty.When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safetymeasures to prevent the equipment from causing
physical injury,fire, or other problem in case anyof the products fail. It is recommended to make your
designfail-safe, flameretardant, and free of malfunction.
･ The products describedin this Specification are intended for use in the following electronic and electrical
equipmentwhich has normal reliabilityrequirements.
･ Computers
･ Machine tools
･ OA equipment
･ AV equipment
･ Communications equipment(Terminal devices)
･ Measurement equipment
･ Personal equipment ･ Industrial robots
･ Electrical home appliances etc.
･ The products describedin this Specification are not designed or manufactured tobe used in equipment or
systems used under life-threatening situations. If you are considering using theseproducts in the equipment
listed below, first check the system construction andrequired reliability, and take adequate safetymeasures
such as a backup system to prevent the equipment from malfunctioning.
･ Backbone network equipment
･ Traffic-signal control equipment
･ Submarine repeater equipment
･ Medical equipment
･ Transportation equipment (automobiles, trains,ships, etc.)
･ Gas alarms, leakage gas auto breakers
･ Burglar alarms,fire alarms, emergency equipment
･ Nuclear control equipment etc.
･ Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited
to):
･ Aerospace equipment
･ Aeronautical equipment
11.Warnings
･ The MOSFETs should be used in products within their absolute maximum rating(voltage, current,
temperature, etc.).
･ The MOSFETsmay be destroyed if used beyond the rating.
･ We only guarantee the non-repetitive and repetitive Avalanche capabilityand not for the continuous
Avalanchecapabilitywhich can be assumed as abnormal condition .Please note the devicemaybe
destructed from the Avalanche over the specified maximum rating.
･ The equipment containing MOSFETsshould have adequate fusesor circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
･ Use the MOSFETswithin their reliabilityand lifetime under certain environments or conditions. The
MOSFETsmayfail before the target lifetime of your products if used under certain reliabilityconditions.
･ Be careful when handling MOSFETs for ESD damage. (It is an important consideration.)
･ When handling MOSFETs, hold them bythe case (package) and don’t touch the leads and terminals.
･ It is recommended that anyhandling of MOSFETs is done on grounded electricallyconductive floor and
tablemats.
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
10 / 19
･ Before touching a MOSFET terminal, Discharge any static electricity from your body
by grounding out through a high impedance resistor (about 1M)
･ When soldering, in order to protect the MOSFETs from static electricity, ground the s
or soldering bath through a low impedance resistor.
･ You must design the MOSFETs to be operated within the specified maximum rating
current, temperature, etc.) to prevent possible failure or destruction of devices.
･ Consider the possible temperature rise not only for the channel and case, but also f
leads.
･ Do not directly touch the leads or package of the MOSFETs while power is supplied
operation in order to avoid electric shock and burns.
･ The MOSFETs are made of incombustible material. However, if a MOSFET fails, it m
smoke or flame. Also, operating the MOSFETs near any flammable place or materia
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter du
operation. Design the arrangement to prevent the spread of fire.
･ The MOSFETs should not used in an environment in the presence of acid, organic m
corrosive gas(hydrogen sulfide, sulfurous acid gas etc.)
･ The MOSFETs should not used in an irradiated environment since they are not radi
Installation
･ Soldering involves temperatures which exceed the device storage temperature ratin
device damage and to ensure reliability, observe the following guidelines from the q
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature
2605 C
Duration
101 seconds
3.50.5 seconds
35010 C
･ The immersion depth of the lead should basically be up to the lead stopper and the dis
be a maximum of 1.5mm from the device.
･ When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommended soldering condition
Methods
Categories
Packages
Wave
Wave
Infrared
Reflow
Air
Soldering
Soldering
Soldering
Reflow
iron
(Full dipping) (Only terminal)
(Re-work)
Through-Hole
TO-3PL
TO-3P
×
×
×
×
×
×
×
×
◎
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
○
○
○
○
○
○
○
○
◎
TO-247
◎
TO-3PF
TO-220
◎
◎
TO-220F
T-Pack(L)
TO-3PL-7
◎
◎
◎
◎：Possible
○：Limited to 1 time
×：Unable
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
11 / 19
･ Refer to the following torque reference when mounting the device on a heat sink. Excess torque
applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance, both of which conditions may destroy the device.
Table 1: Recommended tightening torques.
Package style
TO-220
Screw
M3
Tightening torques
Note
30 – 50 Ncm
TO-220F
TO-3P
flatness : < =±30m
roughness : <=10m
Plane off the edges :
C<=1.0mm
TO-3PF
TO-247
M3
M3
40 – 60 Ncm
60 –80 Ncm
TO-3PL
･ The heat sink shouldhave a flatness within±30μm and roughness within 10μm.Also, keepthe tightening
torque within the limits of this specification.
･ Improper handling may cause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)
･ We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to
evenly apply the compound and to eliminate anyair voids.
Storage
･ The MOSFETs must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45 to 75%.
･ If the storage area is very dry, a humidifier may berequired. In such a case, use only deionized water or
boiled water, since the chlorine intap water may corrodethe leads.
･ The MOSFETs should not be subjectedto rapid changes in temperature to avoid condensation on the
surface of the MOSFETs.Therefore store the MOSFETs in a place where the temperature is steady.
･ The MOSFETs should not be stored on top of each other, since this may cause excessive externalforce on
the case.
･ The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause
presoldered connections to fail during later processing.
･ The MOSFETs should be stored in antistatic containers or shipping bags.
12.Appendix
･ This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs(Polybrominated Diphenyl
Ether ) , substances.
･ This products does not contain Class-I ODS and Class-II ODS substancesset force by ‘CleanAirAct of US’
law.
･ If you have anyquestions about any part of this Specification, please contact Fuji
Electric or its sales agent before using the product.
･ Neither Fuji nor its agents shall be held liable for any injury caused by using the products
not in accordance withthe instructions.
･ The applicationexamples described inthisspecification are merelytypical uses of Fuji
Electric products.
･ This specification does not confer any industrial property rights or other rights, nor
constitute a license for such rights.
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
12 / 19
Allowable Power Dissipation
PD=f(Tc)
500
400
300
200
100
0
0
25
50
75
100
125
150
Tc [C]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
160
140
120
100
80
20V
10V
8V
7V
60
6.5V
40
VGS=6.0V
20
0
0
5
10
VDS [V]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
13 / 19
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
100
10
1
0.1
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
100
10
1
0.1
0.1
1
10
100
ID [A]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
14 / 19
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
0.15
0.10
0.05
7V
6.5V
VGS=6V
8V
10V
20V
0.00
0.15
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=36.5A,VGS=10V
0.10
0.05
0.00
max.
typ.
-50
-25
0
25
50
75
100
125
150
Tch [C]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
15 / 19
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
min.
-50
-25
0
25
50
75
100
125
150
Tch [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=73A,Tch=25 C
14
12
10
8
Vcc= 40V
100V
160V
6
4
2
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
Qg [nC]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
16 / 19
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
102
101
100
Ciss
Coss
Crss
10-1
100
101
102
103
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
1000
100
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
17 / 19
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
103
102
101
100
tr
td(off)
td(on)
tf
100
101
102
103
ID [A]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=73A
1200
1000
800
600
400
200
0
IAS=30A
IAS=44A
IAS=73A
0
25
50
75
100
125
150
starting Tch [C]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
18 / 19
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
1x10-5
1x10-4
10-3
10-2
tAV [sec]
Transient Therm al Im pedance
Zth(ch-c)=f(t):D =0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
FujiElectricDeviceTechnologyCo.,Ltd.
MS5F6280
19 / 19
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