MS906C3 [FUJI]

Low loss fast recovery diode; 低损耗快速恢复二极管
MS906C3
型号: MS906C3
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Low loss fast recovery diode
低损耗快速恢复二极管

二极管 快速恢复二极管
文件: 总3页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
(300V / 20A )  
MS906C3 (20A)  
Low loss fast recovery diode  
Outline drawings, mm  
9.0±0.2  
7.0±0.2  
Major characteristics  
4
Characteristics MS906C3 Units Condition  
VRRM  
VF  
300  
0.89  
20  
V
V
A
Solder  
Plating  
Tj=125°C, typ  
IO  
2.0  
1.5  
2.0  
2.5  
2
1
3
3.6±0.2  
1.0±0.2  
1.0±0.2  
(3.2)  
(4.0)  
Features  
Applications  
(0.8)  
Low VF  
High frequency operation  
DC-DCconverters  
AC adapter  
Low height : 2.8mm  
Small mounting area  
High reverse voltage  
Center tap connection  
Connection diagram  
1
2
4
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Symbol  
VRRM  
VRSM  
Io  
Conditions  
Item  
Rating  
300  
300  
20  
Unit  
V
Repetitive peak reverse voltage  
Repetitive peak surge reverse voltage  
Average output current  
Surge current  
tw=500ns, duty=1/40  
V
Square wave, duty=1/2  
Tc=95°C  
A
*
Sine wave  
10ms  
IFSM  
Tj  
80  
A
Operating junction temperature  
Storage temperature  
+150  
°C  
°C  
Tstg  
-40 to +150  
* Average output current at centertap full wave connection  
Electrical characteristics (Tc=25°C Unless otherwise specified )  
Unit  
V
Item  
Symbol  
VFM  
Max.  
1.2  
Conditions  
IFM=10A  
Forward voltage drop  
Reverse current  
VR=VRRM  
µA  
ns  
IRRM  
trr  
200  
35  
IF=0.1A, IR=0.2A,  
Irec=0.05A  
Reverse recovery time  
Electrical characteristics (Tc=25°C Unless otherwise specified )  
Condition  
Item  
Symbol  
Max.  
Unit  
Junction to case  
Thermal resistance  
Rth(j-c)  
2
°C/W  
(300V / 20A )  
MS906C3 (20A)  
Characteristics  
Reverse Characteristic (typ.)  
Forward Characteristic (typ.)  
101  
100  
10  
Tj=150°C  
Tj=125°C  
Tj=100°C  
100  
Tj=150°C  
Tj=125°C  
Tj=100°C  
10-1  
10-2  
10-3  
1
Tj=25°C  
0.1  
Tj=25°C  
0.01  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
50  
100  
150  
200  
250  
300  
VR Reverse Voltage (V)  
VF Forward Voltage (V)  
Reverse Power Dissipation  
Forward Power Dissipation  
14  
12  
10  
8
6
5
4
3
2
1
0
360°  
360°  
DC  
Io  
VR  
α
λ
Square wave λ=60°  
Square wave λ=120°  
Sine wave λ=180°  
α=180o  
Square wave λ=180°  
6
DC  
4
2
Per 1element  
10  
0
0
1
2
3
4
5
6
7
8
9
0
25 50 75 100 125 150 175 200 225 250 275 300  
VR Reverse Voltage (V)  
Io Average Forward Current (A)  
Junction Capacitance Characteristic (typ.)  
Current Derating (Io-Tc)  
100  
10  
1
160  
150  
140  
130  
120  
110  
100  
90  
360°  
Io  
λ
DC  
Sine wave λ=180°  
Square wave λ=180°  
λ=120°  
Square wave  
Square wave λ=60°  
80  
70  
60  
1
10  
100  
0
5
10  
15  
20  
Io Average Output Current (A)  
α :Conduction angle of forward current for each rectifier element  
VR Reverse Voltage (V)  
Io:Output current of center-tap full wave connection  
MS906C3 (20A)  
(300V / 20A )  
Surge Capability  
1000  
100  
10  
1
10  
100  
Number of Cycles at 50Hz  
Transient Thermal Impedance  
102  
101  
100  
10-1  
10-3  
10-2  
10-1  
100  
101  
102  
t
Time (s)  

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