PA847C04 [FUJI]

Schottky barrier diode; 肖特基二极管
PA847C04
型号: PA847C04
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Schottky barrier diode
肖特基二极管

肖特基二极管
文件: 总3页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
(45V / 40A )  
PA847C04 (40A)  
Schottky barrier diode  
Outline drawings, mm  
15.5 Max.  
Major characteristics  
4.5±0.2  
Ø3.2±0.1  
13.0  
7.2±0.1  
Characteristics PA847C04 Units Condition  
10.0  
2.0  
VRRM  
VF  
45  
0.38  
40  
V
V
A
15±0.2  
Tj=125°C, typ  
1
2
3
IO  
2.2  
1.6  
1.6  
1.1  
1.5  
0.5  
5.45 5.45  
Features  
Applications  
Package : TO-3P  
Low VF  
High frequency operation  
DC-DCconverters  
AC adapter  
Optimized for 3.3V  
Connection diagram  
5V output application  
Center tap connection  
1
2
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Symbol  
VRSM  
VRRM  
Io  
Conditions  
Item  
Rating  
45  
Unit  
V
tw=500ns, duty=1/40  
Repetitive peak surge reverse voltage  
Repetitive peak reverse voltage  
Average output current  
45  
V
Square wave, duty=1/2  
Tc=102°C  
*
40  
A
Sine wave  
10ms, 1shot  
IFSM  
Tj  
Non-repetitive surge current  
Operating junction temperature  
Storage temperature  
250  
+150  
A
°C  
°C  
Tstg  
-40 to +150  
* Average output current at centertap full wave connection  
Electrical characteristics (Tc=25°C Unless otherwise specified )  
Item  
Symbol  
Max.  
0.55  
8.0  
Unit  
V
Conditions  
IFM=16A  
Forward voltage drop  
Reverse current  
VF  
IR  
VR=VRRM  
mA  
Electrical characteristics (Tc=25°C Unless otherwise specified )  
Condition  
Item  
Symbol  
Max.  
1.2  
Unit  
Junction to case  
Thermal resistance  
Rth(j-c)  
°C/W  
(45V / 40A )  
PA847C04 (40A)  
Characteristics  
Reverse Characteristic (typ.)  
Forward Characteristic (typ.)  
103  
102  
101  
100  
10-1  
10-2  
100  
10  
1
Tj=150°C  
Tj=125°C  
Tj=100°C  
Tj=150°C  
Tj=125°C  
Tj=100°C  
Tj=25°C  
Tj= 25°C  
0.1  
0.0  
0
10  
20  
30  
40  
50  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
VR  
Reverse Voltage  
(V)  
VF Forward Voltage (V)  
Forward Power Dissipation  
Reverse Power Dissipation  
30  
25  
20  
15  
10  
5
45  
DC  
Io  
360°  
40  
35  
30  
25  
20  
15  
10  
5
VR  
λ
360°  
α
Square wave λ=60°  
Square wave λ=120°  
Sine wave λ=180°  
α=180°  
Square wave λ=180°  
DC  
Per 1element  
20  
0
0
0
5
10  
15  
25  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
Io Average Forward Current (A)  
VR Reverse Voltage (V)  
Junction Capacitance Characteristic (typ.)  
Current Derating (Io-Tc)  
10000  
160  
150  
140  
130  
120  
110  
100  
90  
DC  
Sine wave λ=180°  
1000  
Square wave λ=180°  
Square wave λ=120°  
360°  
80  
λ
Io  
70  
VR=30V  
60  
Square wave λ=60°  
100  
50  
10  
100  
0
10  
20  
30  
40  
50  
60  
Io Average Output Current (A)  
VR Reverse Voltage (V)  
λ :Conduction angle of forward current for each rectifier element  
Io:Output current of center-tap full wave connection  
PA847C04 (40A)  
(45V / 40A )  
Surge Capability  
1000  
100  
10  
1
10  
100  
Number of Cycles at 50Hz  
Transient Thermal Impedance  
101  
100  
10-1  
10-2  
10-3  
10-2  
10-1  
t
100  
Time (sec)  
101  
102  

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