TP868C15R [FUJI]
High Voltage Schottky barrier diode; 高电压肖特基势垒二极管
| 型号： | TP868C15R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | High Voltage Schottky barrier diode |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(150V / 30A )
TP868C15R (30A)
[0401]
High Voltage Schottky barrier diode
Outline drawings, mm
Major characteristics
Characteristics TP868C15R Units Condition
VRRM
VF
150
0.90
30
V
V
A
Tc=25°C MAX.
IO
Package : T-pack
Features
Applications
Epoxy resin UL : V-0
Low VF
High frequency operation
DC-DCconverters
AC adapter
High Voltage
Connection diagram
Center tap connection
Maximum ratings and characteristics
1
2
3
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Symbol
VRSM
VRRM
Io
Conditions
Item
Rating
150
Unit
V
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
tw=500ns, duty=1/40
150
V
Square wave, duty=1/2
Tc=118°C
*
30
A
Sine wave
10ms 1shot
IFSM
Tj
Non-repetitive surge current **
Operating junction temperature
Storage temperature
225
A
+150
°C
°C
Tstg
-40 to +150
* Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Max.
0.90
Unit
V
Conditions
IFM=15A
Forward voltage drop
Reverse current
VF
VR=VRRM
IR
200
1.0
µA
Junction to case
Rth(j-c)
Thermal resistance
°C/W
Mechanical characteristics
Mounting torque
Recommended torque
0.3 to 0.5
2
N·m
g
Approximate mass
(150V / 30A )
TP868C15R (30A)
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
Tj=150°C
Tj=125°C
101
100
10
Tj=100°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
10-1
10-2
10-3
1
Tj= 25°C
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
10 20 30 40 50 60 70 80 90 100110120130140150160
V F Forward Voltage (V)
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
12
10
8
22
20
Io
DC
360°
λ
18
16
14
12
10
8
VR
360°
α
Square wave λ =60°
Square wave λ =120°
Sine wave λ =180°
α =180°
6
Square wave λ =180°
DC
4
6
4
2
2
Per 1element
14 16
0
0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
18
V R Reverse Voltage (V)
I o Average Forward Current (A)
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (max.)
1000
150
140
130
120
110
100
DC
100
Sine wave λ =180°C
Square wave λ =180°C
360°
Square wave λ =120°C
λ
Io
VR=75V
Square wave λ =60°C
10
0
5
10
15
20
25
30
35
40
45
1
10
100
1000
I o Average Output Current (A)
VR Reverse Voltage (V)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
TP868C15R (30A)
(150V / 30A )
Surge Current Ratings (max.)
Surge Capability (max.)
1000
100
10
1000
100
10
10
100
1000
1
10
100
Number of Cycles at 50Hz
tTime (ms) Sinewave
Transient Thermal Impedance (max.)
101
100
10-1
10-2
Rth(j-c):1.0°C/W
10-3
10-2
10-1
100
101
102
t
Time (sec)
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