YG802C09R [FUJI]

SCHOTTKY BARRIER DIODE; 肖特基二极管
YG802C09R
型号: YG802C09R
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

SCHOTTKY BARRIER DIODE
肖特基二极管

肖特基二极管
文件: 总3页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
YG802C09R  
(90V / 10A TO-22OF15)  
Outline Drawings  
SCHOTTKY BARRIER DIODE  
+0.2  
ø3.2 -0.1  
4.5±0.2  
2.7±0.2  
10±0.5  
1.2±0.2  
Features  
0.6 +0.2  
-0  
0.7±0.2  
Low VF  
2.7±0.2  
2.54±0.2  
Super high speed switching.  
High reliability by planer design.  
JEDEC  
EIAJ  
SC-67  
Applications  
Connection Diagram  
High speed power switching.  
2
Maximum Ratings and Characteristics  
1
3
Absolute Maximum Ratings  
Symbol  
VRRM  
VRSM  
Viso  
Conditions  
Rating  
Item  
Unit  
V
90  
Repetitive peak reverse voltage  
Repetitive peak surge reverse voltage  
Isolation voltage  
100  
tw=500ns, duty=1/40  
V
Terminals to Case,  
AC. 1min.  
1500  
V
duty=1/2, Tc=102°C  
Square wave  
IO  
10*  
Average output current  
Surge current  
A
IFSM  
Tj  
Sine wave 10ms  
80  
A
-40 to +150  
-40 to +150  
Operating junction temperature  
Storage temperature  
°C  
°C  
Tstg  
*
Out put current of centertap full wave connection.  
Electrical Characteristics (Ta=25°C Unless otherwise specified )  
Item  
Symbol  
VF  
Conditions  
IF=4.0A  
Max.  
0.9  
Unit  
V
Forward voltage drop **  
Reverse current **  
Thermal resistance  
IR  
VR=VRRM  
5.0  
mA  
Rth(j-c)  
Junction to case  
3.5  
°C/W  
**Rating per element  
Mechanical Characteristics  
N · m  
g
0.3 to 0.5  
2.3  
Recommended torque  
Mounting torque  
Weight  
(90V / 10A TO-22OF15)  
Characteristics  
YG802C09R  
Reverse Characteristic (typ.)  
Forward Characteristic (typ.)  
102  
101  
100  
10-1  
10-2  
10-3  
Tj=150 o  
Tj=125 o  
10  
Tj=100 oC  
Tj=150 o  
Tj=125 o  
Tj=100 oC  
Tj=25oC  
1
Tj=25oC  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
10 20 30 40 50 60 70 80 90 100 110  
VF Forward Voltage (V)  
VR Reverse Voltage (V)  
Forward Power Dissipation  
Reverse Power Dissipation  
8
7
6
5
4
3
2
1
0
20  
15  
10  
5
DC  
Io  
360°  
λ
360°  
VR  
α
Square wave λ=60o  
Square wave λ=120o  
Sine wave λ=180o  
Square wave λ=180o  
DC  
α=180o  
Per 1element  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
0
20  
40  
60  
80  
100  
Io Average Forward Current (A)  
VR Reverse Voltage (V)  
Junction Capacitance Characteristic  
(typ.)  
Current Derating (Io-Tc)  
1000  
100  
10  
160  
150  
140  
130  
120  
110  
100  
90  
DC  
Sine wave λ=180o  
Square wave λ=180o  
Square wave λ=120o  
80  
360°  
λ
Io  
Square wave λ=60o  
70  
VR=50V  
60  
50  
10  
100  
0
2
4
6
8
10  
12  
14  
VR Reverse Voltage (V)  
Io Average Output Current (A)  
λ:Conduction angle of forward current for each rectifier element  
Io:Output current of center-tap full wave connection  
YG802C09R  
(90V / 10A TO-22OF15)  
Surge Capability  
1000  
100  
10  
1
10  
100  
Number of Cycles at 50Hz  
Transient Thermal Impedance  
102  
101  
100  
10-1  
10-2  
10-1  
100  
101  
102  
t
Time (sec.)  

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