YG835C03R_01 [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | YG835C03R_01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG835C03R
(30V / 25A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
10±0.5
1.2±0.2
0.6 +0.2
Features
Low VF
-0
0.7±0.2
2.7±0.2
2.54±0.2
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
Item
Unit
V
30
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolating voltage
30
1500
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
V
duty=1/2, Tc=99°C
Square wave
IO
25*
Average output current
Suege current
A
IFSM
Tj
Sine wave 10ms
120
A
+150
Operating junction temperature
Storage temperature
°C
°C
Tstg
-40 to +150
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Max.
0.45
Unit
V
Symbol
VF
Conditions
IF=6.0A
Forward voltage drop **
Reverse current **
Thermal resistance
15.0
2.5
mA
IR
VR=VRRM
°C/W
Rth(j-c)
Junction to case
**Rating per element
Mechanical Characteristics
N · m
g
0.3 to 0.5
2.0
Recommended torque
Mounting torque
Weight
A-456
(30V / 25A TO-22OF15)
YG835C03R
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
103
102
101
100
10-1
10-2
10-3
100
Tj=150°C
Tj=125°C
Tj=100°C
10
Tj=150°C
Tj=125°C
1
Tj=100°C
Tj=25°C
Tj= 25°C
0.1
0.01
0
10
20
30
40
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VF Forward Voltage (V)
VR Reverse Voltage (V)
Reverse Power Dissipation
Forward Power Dissipation
17
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
DC
Io
360°
λ
VR
360°
α
Square waveλ=60°
Square wave λ=120°
Sine wave λ=180°
Square waveλ=180°
DC
8
α=180°
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
Per 1element
10 11
0
0
0
1
2
3
4
5
6
7
8
9
12
0
5
10
15
20
25
30
35
40
45
Io Average Forward Current (A)
VR Reverse Voltage (V)
Current Derating (Io-Tc)
Junction Capacitance Characteristic (typ.)
160
10000
1000
100
150
140
130
120
110
100
90
DC
Sine wave λ=180°
Square wave λ=180°
80
Square wave λ=120°
70
360°
60
λ
Io
50
VR=20V
Square waveλ=60°
40
30
20
10
0
5
10
15
20
25
30
35
1
10
100
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
VR Reverse Voltage (V)
Io:Output current of center-tap full wave connection
YG835C03R
(30V / 25A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
10 2
10 1
10 0
10 -1
10 -3
10 -2
10 -1
t
10 0
10 1
10 2
Time (sec.)
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