YG912S6R [FUJI]
LOW LOSS SUPER HIGH SPEED RECTIFIER; 低损失超高速整流器
| 型号： | YG912S6R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | LOW LOSS SUPER HIGH SPEED RECTIFIER |
| 文件： | 总14页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(Under developmemt)
Specification
(1200A/1200V-2in1 IGBT-Module)
Device Name
Type Name
Spec. No.
:
:
:
IGBT-Module
2MBI1200U4G-120
MT5F16507
Fuji Electric Device Technology Co.,Ltd.
Matsumoto Factory
DATE
NAME
T.Nishimura
H.Kakiki
APPROVAL
DRAWN
14-Jul-05
14-Jul-05
CHECKED
T.Miyasaka
1
14
MT5F16507
H04-004-007
Tentative
(Under developmemt)
Revised Records
Classifi -
cation
Applied
date
Date
Ind.
Content
Drawn
Checked
Approved
Issued
date
14-Jul-05 enactment
-
-
-
H.Kakiki
T.Miyasaka
2
14
MT5F16507
H04-004-006
(Under developmemt)
Type Name : 2MBI1200U4G-120 ／ꢀPKG.No. M248
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
main collector
main emitter
sense emitter
sense collector
gate
gate
sense emitter
sense collector
main emitter
main collector
3
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MT5F16507
H04-004-003
(Under developmemt)
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）
Maximum
Ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
1200
V
V
±20
1600
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Ic
Continuous
1ms
1200
3200
Collector current
Icp
A
2400
-Ic
-Ic pulse
Pc
1200
1ms
2400
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
1 device
4960
W
Tj
150
°C
Tstg
-40 ~ +125
between terminal and copper base *1
Viso
AC : 1min.
2500
VAC
N m
voltage
Mounting
5.75
10
Screw Torque *2
Main Terminals
Sense Terminals
2.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Characteristics
typ.
Items
Zero gate voltage
Symbols
ICES
Conditions
VGE = 0V
Units
min.
-
max.
1.0
-
-
mA
nA
V
Collector current
VCE = 1200V
VCE = 0V
Gate-Emitter
leakage current
IGES
-
1600
7.5
VGE=±20V
VCE = 20V
Ic = 1200mA
Gate-Emitter
threshold voltage
VGE(th)
5.5
6.5
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
-
-
-
-
-
2.20
2.40
1.90
2.10
135
2.35
VCE(sat)
(main terminal)
VGE=15V
Ic = 1200A
-
Collector-Emitter
saturation voltage
V
2.05
VCE(sat)
(sense terminal)
-
-
-
Input capacitance
Turn-on
Cies
ton
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
nF
1.35
Ic = 1200A
tr
-
0.65
-
VGE=±15V,Tj=125℃
Rgon = 3.3 Ω
μs
toff
tf
-
-
-
-
-
-
-
-
0.80
0.20
1.95
2.05
1.65
1.75
0.45
0.25
-
Turn-off
Rgoff = 0.82 Ω
-
Tj= 25°C
VGE=0V
2.10
VF
(main terminal)
Tj=125°C
-
Forward on voltage
V
Tj= 25°C
IF = 1200A
1.80
VF
(sense terminal)
Tj=125°C
-
-
-
Reverse recovery
trr
IF = 1200A
μs
Lead resistance, terminal-chip *
R lead
mΩ
(*)
Biggest internal terminal resistance among arm.
4
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MT5F16507
H04-004-003
(Under developmemt)
5. Thermal resistance characteristics
Items
Characteristics
Units
Symbols
Rth(j-c)
Conditions
min.
typ.
max.
0.025
0.042
-
IGBT
FWD
-
-
-
-
-
Thermal resistance(1device)
°C/W
Contact Thermal resistance(1device)
Rth(c-f) with Thermal Compound (*)
0.006
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Lot.No.
Logo of production
Sample.No.
2MBI1200U4G-120
1200A / 1200V
Place of manufacturing (code)
7.Applicable category
This specification is applied to IGBT Module named 2MBI1200U4G-120 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
Avoid exposure to corrosive gases and dust.
・
・
・
・
・
・
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
90%
～～
0V
0V
V
GE
t
r r
L
I
r r
V
Ic
CE
90%
～～
～～
90%
Vcc
10%
10%
10%
V
CE
Ic
0V
0A
R
G
V
CE
t
t
f
r (i )
V
GE
Ic
t
r
t
o f f
t
o n
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
5
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MT5F16507
H04-004-003
(Under developmemt)
11.Reliability test results
Reliability Test Items
Reference
Accept-
Test
cate-
gories
Number
norms
Test items
Test methods and conditions
: 40N
ance
number
of sample
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 401
1 Terminal Strength
(Pull test)
Pull force
5
5
( 0 : 1 )
( 0 : 1 )
Method
Ⅰ
Test time
:
:
10±1 sec.
Test Method 402
Method
2 Mounting Strength
Screw torque
1.8 ~ 2.1 N·m (M4)
4.25 ~ 5.75 N·m (M6)
8.0~ 10.0 N·m (M8)
10±1 sec.
Ⅱ
Test time
:
Test Method 403
Reference 1
3 Vibration
4 Shock
Range of frequency : 10 ~ 500Hz
5
5
( 0 : 1 )
Sweeping time
Acceleration
: 15 min.
100m/s2
Condition code B
:
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
1000m/s2
Test Method 404
Condition code A
Maximum acceleration
Pulse width
:
( 0 : 1 )
: 6.0msec.
Direction
: Each X,Y,Z axis
: 3 times/direction
Test time
Test Method 201
Test Method 202
1 High Temperature
Storage
Storage temp.
Test duration
Storage temp.
Test duration
Storage temp.
Relative humidity
Test duration
Test temp.
:
125±5
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
℃
: 1000hr.
: -40±5
2 Low Temperature
Storage
℃
: 1000hr.
Test Method 103
Test code C
3 Temperature
Humidity
:
:
85±2
℃
85±5%
Storage
: 1000hr.
: 120
Test Method 103
Test code E
4 Unsaturated
Pressurized Vapor
2
5
5
( 0 : 1 )
( 0 : 1 )
±
℃
Test humidity
Test duration
:
85±5%
: 96hr.
Test Method 105
5 Temperature
Cycle
Test temp.
:
Low temp. -40
High temp. 125
5
±
℃
℃
5
±
RT 5 ~ 35
℃
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Number of cycles
Test temp.
Test Method 307
Method
6 Thermal Shock
5
( 0 : 1 )
+0
High temp. 100 -5
:
Ⅰ
℃
Condition code A
+5
Low temp. 0 -0
℃
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
: 10 sec.
Transfer time
Number of cycles
: 10 cycles
6
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MT5F16507
H04-004-003
(Under developmemt)
Reliability Test Items
Reference
Accept-
Test
cate-
gories
Number
norms
Test items
Test methods and conditions
ance
of sample
EIAJ ED-4701
(Aug.-2001 edition)
number
Test Method 101
1 High temperature
Reverse Bias
5
( 0 : 1 )
Test temp.
:
:
Ta = 125
5
℃
±
(Tj
150
)
℃
≦
Bias Voltage
Bias Method
VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
Test temp.
: 1000hr.
Test Method 101
2 High temperature
Bias (for gate)
5
( 0 : 1 )
:
Ta = 125
5
℃
±
(Tj
150
)
℃
≦
Bias Voltage
Bias Method
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
Test Method 102
Condition code C
3 Temperature
Humidity Bias
5
( 0 : 1 )
85 2 oC
:
Test temp.
±
Relative humidity
Bias Voltage
Bias Method
:
:
85 5%
±
VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
ON time
OFF time
Test temp.
: 1000hr.
: 2 sec.
: 18 sec.
Test Method 106
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
5
( 0 : 1 )
:
Tj=100±5 deg
ꢀ
Tj
150 , Ta=25±5
℃ ℃
≦
Number of cycles
: 15000 cycles
Failure Criteria
Item
Characteristic
Leakage current
Symbol
Failure criteria
Unit
mA
Note
Lower limit Upper limit
Electrical
ICES
±IGES
VGE(th)
VCE(sat)
VF
-
USL×2
USL×2
characteristic
-
A
ꢁ
Gate threshold voltage
Saturation voltage
Forward voltage
LSL×0.8
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
V
-
-
-
V
Thermal
IGBT
VGE
mV
ꢀ
resistance
or VCE
ꢀ
FWD
VF
-
USL×1.2
mV
-
ꢀ
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
Visual
inspection
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
7
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MT5F16507
H04-004-003
(Under developmemt)
Reliability Test Results
Reference
norms
EIAJ ED-4701
Test
cate-
gories
Number Number
of test of failure
sample sample
Test items
(Aug.-2001 edition)
Test Method 401
1 Terminal Strength
(Pull test)
5
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
*
Method
Ⅰ
Test Method 402
Method
2 Mounting Strength
Ⅱ
Test Method 403
3 Vibration
Condition code B
Test Method 404
4 Shock
Condition code B
Test Method 201
1 High Temperature Storage
2 Low Temperature Storage
Test Method 202
Test Method 103
Test code C
3 Temperature Humidity
Storage
Test Method 103
Test code E
4 Unsaturated
0
0
0
Pressurized Vapor
Test Method 105
5 Temperature Cycle
6 Thermal Shock
Test Method 307
Method
Ⅰ
Condition code A
Test Method 101
1 High temperature Reverse Bias
5
5
5
5
*
0
*
Test Method 101
2 High temperature Bias
( for gate )
Test Method 102
Condition code C
Test Method 106
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Power cycling)
0
( for IGBT )
* under confirmation
8
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MT5F16507
H04-004-003
(Under developmemt)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, sense terminal
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25℃,sense terminal
2800
2400
2000
1600
1200
800
2800
2400
2000
1600
1200
800
VGE=20V 15V
12V
VGE=20V 15V
12V
10V
8V
10V
8V
400
400
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,sense terminal
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25℃,sense terminal
2800
2400
2000
1600
1200
800
10
8
Tj=25°C
Tj=125°C
6
4
Ic=2400A
Ic=1200A
Ic=600A
2
400
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Dynamic Gate charge (typ.)
Tj= 25°C
1000
100
10
1000
25
20
15
10
5
Cies
800
600
400
200
0
VGE
VCE
Cres
Coes
1
0
0
10
20
30
0
1000 2000 3000 4000 5000 6000
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
9
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MT5F16507
H04-004-003
(Under developmemt)
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= １25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=3.3Ω, Rgoff=0.82Ω, Tj= １25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
ton
ton
tr
toff
toff
tr
tf
tf
0
2
4
6
8
10
12
14
16
18
0
400
800
1200
1600
2000
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=3.3Ω, Rgoff=0.82Ω, Tj= １25°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= １25°C
500
450
400
350
300
250
200
150
100
50
1000
900
800
700
600
500
400
300
200
100
0
Eon
Eoff
Eon
Err
Eoff
Err
0
0
2
4
6
8
10
12
14
16
18
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
Gate resistance : Rg [ Ω ]
Reverse bias safe operating area (max.)
±VGE=15V ,Tj = 125°Cꢀ/ chip
2800
2400
2000
1600
1200
800
400
0
0
200
400
600
800
1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
10
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MT5F16507
H04-004-003
Tentative
(Under developmemt)
Forward current vs. Forward on voltage (typ.)
sense terminal
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=3.3Ω, Tj=125℃
2800
2400
2000
1600
1200
800
900
800
700
600
500
400
300
200
100
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=25℃ Tj=125℃
Irr
trr
400
0
0
400
800
1200
1600
2000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Transient thermal resistance (max.)
0.100
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
11
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MT5F16507
H04-004-003
(Under developmemt)
Warnings
-
-
-
This product shall be used within its absolute maximum rating (voltage, current, and temperature).ꢀThis product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
-
-
Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる
場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際
の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。
Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合があります。
-
-
Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。ꢀ過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
-
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
-
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
12
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MT5F16507
H04-004-003
(Under developmemt)
Warnings
If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
-
-
-
Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。
In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。ꢀ（推奨値 : -VGE = -15V)
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。
-
-
This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内
でご使用下さい。
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(Under developmemt)
Cautions
-
Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
-
-
The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,ꢀplease apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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