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元器件品牌
2SK2850-01
[FUJI]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
元器件型号：
2SK2850-01
生产厂家：
FUJI ELECTRIC
描述和应用：
N-Channel Enhancement Mode Power MOSFET
N沟道增强型功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总12页 (文件大小：261K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK2850-01参数
查看货源
2SK2851
Silicon N Channel MOS FET High Speed Power Switching
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156
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134
HITACHI
2SK2851TZ-E
5000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, SC-51, TO-92MOD, 3 PIN
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1
RENESAS
2SK2854
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
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53
TOSHIBA
2SK2854
N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)
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66
TOSHIBA
2SK2854_07
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
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27
TOSHIBA
2SK2855
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
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28
TOSHIBA
2SK2855
N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION)
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45
TOSHIBA
2SK2855_07
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
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28
TOSHIBA
2SK2856
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
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62
TOSHIBA
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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156
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149
NEC
2SK2857
MOS Field Effect Transistor
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38
KEXIN
2SK2857
Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX
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33
TYSEMI
2SK2857
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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1
NEC
2SK2857-AZ
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
NEC
2SK2857C
N-CHANNEL MOSFET FOR SWITCHING
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2
RENESAS
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