2SA733T-Y [FUTUREWAFER]

Low Frequency Amplifier PNP Epitaxial Silicon Transistor;
2SA733T-Y
型号: 2SA733T-Y
厂家: FutureWafer Tech Co.,Ltd    FutureWafer Tech Co.,Ltd
描述:

Low Frequency Amplifier PNP Epitaxial Silicon Transistor

文件: 总7页 (文件大小:959K)
中文:  中文翻译
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2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
1. Synopsis  
1-1. Feature List  
BV CEO: -50V (Min.)  
Low Saturation Voltage V CE(sat) < -0.3V @ -0.1A  
I C = -100mA Continuous Collector Current  
Complementary to 2SC945  
1-2. Mechanical Characteristics  
Molded JEDEC Package: TO-92  
Packing: Tape Box  
Flammability rating UL 94V-0  
Halogen Free  
JEDEC MSL Classification: LEVEL 1  
B
C
E
C
TO-92  
B
E
Device Symbol  
1-3. Device Characteristics  
1-4. Classification of h FE  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
1/7  
 
 
 
 
 
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
2. Contents  
1. Synopsis.............................................................................................................................................. 1  
1-1. Feature List ............................................................................................................................... 1  
1-2. Mechanical Characteristics..................................................................................................... 1  
1-3. Device Characteristics............................................................................................................. 1  
1-4. Classification of h FE ................................................................................................................. 1  
2. Contents .............................................................................................................................................. 2  
3. Electrical Property............................................................................................................................. 3  
3-1. Electrical Characteristics (@TA = 25°C, Unless Otherwise Specified) ...................................................... 3  
3-2. Ratings and Characteristics Curve-Fig 1~2 (@TA = 25°C, Unless Otherwise Specified)....................... 3  
3-2. Ratings and Characteristics Curve-Fig 3~6 (@TA = 25°C, Unless Otherwise Specified)....................... 4  
4. Soldering Parameters....................................................................................................................... 5  
5. Package Information......................................................................................................................... 6  
6. Ordering Information........................................................................................................................ 7  
7. Version................................................................................................................................................. 7  
7-1. History........................................................................................................................................ 7  
7-2. Company Profile....................................................................................................................... 7  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
2/7  
 
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
3. Electrical Property  
3-1. Electrical Characteristics (@TA = 25°C, Unless Otherwise Specified)  
3-2. Ratings and Characteristics Curve-Fig 1~2 (@TA = 25°C, Unless Otherwise Specified)  
Fig 1. DC Current Gain  
Fig 2. Static Characteristics  
I C, Collector Current (mA)  
V CE, Collector-Emitter Voltage (V)  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
3/7  
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
3-2. Ratings and Characteristics Curve-Fig 3~6 (@TA = 25°C, Unless Otherwise Specified)  
Fig 3. Collector Output Capacitance  
Fig 4. Base-Emitter On Voltage  
V CB, Collector-Base Voltage (V)  
V BE, Base-Emitter Voltage (V)  
Fig 6. Collect Current vs. V BE  
Fig 5. Saturation Voltage  
I C, Collector Current (mA)  
V BE, Base-Emitter Voltage (V)  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
4/7  
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
4. Soldering Parameters  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
5/7  
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
5. Package Information  
www.futurewafer.com.tw  
FQE-001-04  
Document No.: F51936S  
27-NOV-2021 V 2.0  
6/7  
2SA733  
Low Frequency Amplifier  
PNP Epitaxial Silicon Transistor  
6. Ordering Information  
Note: 2SA733T-X, X = h FE Rank  
7. Version  
7-1. History  
7-2. Company Profile  
Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司  
TEL: +886-3-3350161 / FAX: +886-3-3350172  
cherry@futurewafer.com.tw  
No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan  
www.futurewafer.com.tw  
Document No.: F51936S  
27-NOV-2021 V 2.0  
FQE-001-04  
7/7  

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