2SC945T-Y [FUTUREWAFER]
Low Frequency Amplifier NPN Epitaxial Silicon Transistor;
| 型号： | 2SC945T-Y |
| 厂家： | 
FutureWafer Tech Co.,Ltd |
| 描述： | Low Frequency Amplifier NPN Epitaxial Silicon Transistor |
| 文件： | 总7页 (文件大小：932K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
1. Synopsis
1-1. Feature List
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BV CEO: 50V (Min.)
Low Saturation Voltage V CE(sat) < 0.3V @ 0.1A
I C = 400mA Continuous Collector Current
Complementary to 2SA733
1-2. Mechanical Characteristics
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Molded JEDEC Package: TO-92
Packing: Tape Box
Flammability rating UL 94V-0
Halogen Free
JEDEC MSL Classification: LEVEL 1
B
C
E
TO-92
Device Symbol
1-3. Device Characteristics
1-4. Classification of h FE
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
1/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
2. Contents
1. Synopsis.............................................................................................................................................. 1
1-1. Feature List ............................................................................................................................... 1
1-2. Mechanical Characteristics..................................................................................................... 1
1-3. Device Characteristics............................................................................................................. 1
1-4. Classification of h FE ................................................................................................................. 1
2. Contents .............................................................................................................................................. 2
3. Electrical Property............................................................................................................................. 3
3-1. Electrical Characteristics (@TA = 25°C, Unless Otherwise Specified) ...................................................... 3
3-2. Ratings and Characteristics Curve-Fig 1~2 (@TA = 25°C, Unless Otherwise Specified)....................... 3
3-2. Ratings and Characteristics Curve-Fig 3~6 (@TA = 25°C, Unless Otherwise Specified)....................... 4
4. Soldering Parameters....................................................................................................................... 5
5. Package Information......................................................................................................................... 6
6. Ordering Information........................................................................................................................ 7
7. Version................................................................................................................................................. 7
7-1. History........................................................................................................................................ 7
7-2. Company Profile....................................................................................................................... 7
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
2/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
3. Electrical Property
3-1. Electrical Characteristics (@TA = 25°C, Unless Otherwise Specified)
3-2. Ratings and Characteristics Curve-Fig 1~2 (@TA = 25°C, Unless Otherwise Specified)
Fig 1. DC Current Gain
Fig 2. Static Characteristics
I C, Collector Current (mA)
V CE, Collector-Emitter Voltage (V)
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
3/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
3-2. Ratings and Characteristics Curve-Fig 3~6 (@TA = 25°C, Unless Otherwise Specified)
Fig 3. Collector Output Capacitance
Fig 4. Base-Emitter On Voltage
V CB, Collector-Base Voltage (V)
V BE, Base-Emitter Voltage (V)
Fig 6. Collect Current vs. V BE
Fig 5. Saturation Voltage
I C, Collector Current (mA)
V BE, Base-Emitter Voltage (V)
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
4/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
4. Soldering Parameters
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
5/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
5. Package Information
www.futurewafer.com.tw
FQE-001-04
Document No.: F51939M
27-NOV-2021 V 2.0
6/7
2SC945
Low Frequency Amplifier
NPN Epitaxial Silicon Transistor
6. Ordering Information
Note: 2SC945T-X, X = h FE Rank
7. Version
7-1. History
7-2. Company Profile
Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司
TEL: +886-3-3350161 / FAX: +886-3-3350172
cherry@futurewafer.com.tw
No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan
www.futurewafer.com.tw
Document No.: F51939M
27-NOV-2021 V 2.0
FQE-001-04
7/7
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