FST16040L [GENESIC]
Schottky Diode;
| 型号： | FST16040L |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Schottky Diode 局域网 二极管 |
| 文件： | 总3页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FST16040L
VRRM = 40 V
IF(AV) = 160 A
Low VF Silicon Power
Schottky Diode
Features
• High Surge Capability
• Isolated to Plate
• Not ESD Sensitive
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Conditions
Parameter
FST16040L
Unit
VRRM
VRMS
VDC
Tj
Maximum recurrent peak reverse voltage
Maximum RMS voltage
40
28
V
V
Maximum DC blocking voltage
Operating temperature
40
V
-55 to 150
-55 to 150
°C
°C
Tstg
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Parameter
FST16040L
Unit
IF(AV)
IFSM
TC = 100 °C
Average forward current (per pkg)
Peak forward surge current (per leg)
160
A
A
tp = 8.3 ms, half sine
1000
Maximum instantaneous forward voltage (per
leg)
VF
I
FM = 80 A, Tj = 25 °C
V
0.60
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Tj = 25 °C
2
IR
mA
Tj = 100 °C
200
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
0.50
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
FST16040L
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
FST16040L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
N
A
P
G
E
C
L
J
1
2
3
F
H
B
K
M
R
Q
D
Inches
Millimeters
Min
Max
2.005
0.325
0.505
0.192
1.010
2.410
1.525
0.122
0.420
0.275
0.510
0.350
0.195
0.045
0.455
0.910
Min
50.67
7.62
Max
50.93
8.26
A
B
C
D
E
F
1.995
0.300
0.495
0.182
0.990
2.390
1.495
0.114
-----
12.57
4.62
12.83
4.88
25.15
60.71
37.90
2.90
26.65
61.21
38.70
3.10
G
H
J
-----
10.67
7.0
K
L
M
N
P
0.256
0.490
0.330
0.175
0.035
0.445
0.890
6.5
12.45
8.38
12.95
8.90
4.45
4.95
0.89
1.14
R
Q
11.30
22.61
11.56
23.11
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
相关型号：
FST16045D
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 45V V(RRM), Silicon, TO-249, PACKAGE-3
MICROSEMI
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