GB50SLT12-247 [GENESIC]
Silicon Carbide Power Schottky Diode;
| 型号： | GB50SLT12-247 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Carbide Power Schottky Diode 二极管 |
| 文件： | 总7页 (文件大小：2437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GB50SLT12-247
1200 V SiC MPS™ Diode
Silicon Carbide Power
Schottky Diode
VRRM
IF (Tc
=
=
=
1200 V
94 A
=
135°C)
QC
277 nC
Features
Package
High Avalanche (UIS) Capability
Enhanced Surge Current Capability
175 °C Maximum Operating Temperature
Temperature Independent Switching Behavior
Positive Temperature Coefficient Of VF
Extremely Fast Switching Speeds
Superior Figure of Merit QC/IF
2
1
TO-247-2L
Applications
Advantages
Low Standby Power Losses
Power Factor Correction (PFC)
Improved Circuit Efficiency (Lower Overall Cost)
Low Switching Losses
Switched-Mode Power Supply (SMPS)
Solar Inverters
Ease of Paralleling Devices without Thermal Runaway
Smaller Heat Sink Requirements
Low Reverse Recovery Current
Wind Turbine Inverters
Motor Drives
Induction Heating
Low Device Capacitance
Low Reverse Leakage Current at Operating Temperature
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Symbol
VRRM
Conditions
Values
1200
191
Unit
V
TC = 25 °C, D = 1
TC = 135 °C, D = 1
Continuous Forward Current
IF
94
A
TC = 162 °C, D = 1
50
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
L = 1 mH, IAV = 42 A, VDD = 60 V
VR = 0 ~ 960 V
320
280
220
150
Non-Repetitive Peak Forward Surge Current,
Half Sine Wave
Repetitive Peak Forward Surge Current, Half
Sine Wave
IF,SM
IF,RM
A
A
Non-Repetitive Peak Forward Surge Current
IF,max
∫i2 dt
EAS
dV/dt
Ptot
1400
300
450
100
1241
-55 to 175
A
A2s
mJ
V/µs
W
I2t Value
Non-Repetitive Avalanche Energy
Diode Ruggedness
Power Dissipation
TC = 25 °C
Operating and Storage Temperature
Tj , Tstg
°C
Electrical Characteristics
Parameter
Values
Symbol
Conditions
Unit
min.
typ.
1.5
2.3
5
40
186
277
max.
1.8
2.7
70
475
IF = 50 A, Tj = 25 °C
IF = 50 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
VR = 400 V
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
Diode Forward Voltage
Reverse Current
VF
IR
V
µA
nC
ns
pF
Total Capacitive Charge
Switching Time
QC
ts
VR = 800 V
VR = 400 V
< 10
VR = 800 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 800 V, f = 1 MHz, Tj = 25 °C
3037
203
Total Capacitance
C
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case
RthJC
0.12
°C/W
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 1 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
IF = f(VF,Tj); tP = 300 µs
IF = f(VF,Tj); tP = 300 µs
Figure 2: Typical High Current Forward
Characteristics
Figure 1: Typical Forward Characteristics
Ptot = f(Tj)
IR = f(VR,Tj)
Figure 3: Typical Reverse Characteristics
Figure 4: Power Derating Curve
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 2 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
IF = f(TC); D = tP/T, tP= 10 µs
C = f(VR); Tj = 25 °C; f = 1MHz
Figure 6: Typical Junction Capacitance vs
Reverse Voltage Characteristics
Figure 5: Current Derating Curves
Qc = f(VR); Tj = 25 °C; f = 1MHz
EC = f(VR); Tj = 25 °C; f = 1MHz
Figure 7: Typical Capacitive Charge vs.
Reverse Voltage Characteristics
Figure 8: Typical Capacitive Energy vs.
Reverse Voltage Characteristics
Feb 2018 Rev1.1
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Page 3 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
10−1
10−2
10−3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0
10−5 10−4 10−3 10−2 10−1 100
Pulse Width, tP (s)
Zth,jc = f(tP,D); D = tP/T
Figure 9: Transient Thermal Impedance
IF = (VF – VBI)/RDIFF
Built-In Voltage (VBI):
VBI(Tj) = m*Tj + b,
m = -1.29e-03, b = 0.913
Differential Resistance (RDIFF):
RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω);
a = 6.10e-05, b = 9.01e-03, c = 2.01
IF = f(VF, Tj)
Figure 10: Forward Curve Model
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 4 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
Package Dimensions:
TO-247-2L
PACKAGE OUTLINE
Recommended Solder Pad Layout
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 5 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your
GeneSiC representative.
REACH Compliance
REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a
GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance
information (REACH Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the
human body nor in applications in which failure of the product could lead to death, personal injury or property damage,
including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac
defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air
traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or
implied to any intellectual property rights is granted by this document.
Related Links
Soldering Document: http://www.genesicsemi.com/quality/quality-manual/
Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/
Reliability Report: http://www.genesicsemi.com/quality/reliability/
Published by
Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 6 of 6
GB50SLT12-247
1200 V SiC MPS™ Diode
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GB50SLT12-247_SPICE.pdf)
into LTSPICE (version 4) software for simulation of the GB50SLT12-247.
*
*
*
GeneSiC Semiconductor SiC MPSTM Rectifier
Revision: 1.1
Date: February-2018
**************************************************************************
** TO-247-2 package
**************************************************************************
.SUBCKT GB50SLT12 A K Case
L_anode
D1
A
AD
K
AD
Case
Case
6.5n
GC50MPS12
6.5n
L_cathode
.ends
**************************************************************************
.SUBCKT GB50SLT12 ANODE KATHODE
D1 ANODE KATHODE GC50MPS12_SCHOTTKY
.MODEL GC50MPS12_SCHOTTKY D
+ IS
+ N
4.27E-14
1
RS
0.0124
500
2
2.717E-05
0.879
0.5
IKF
XTI
TRS2
VJ
+ EG
1.2
+ TRS1
+ CJO
+ M
0.005434
4.24E-9
0.438
FC
+ TT
1.00E-10
5E-06
50
BV
VPK
TYPE
1600
+ IBV
+ IAVE
+ MFG
.ENDS
1200
SiC_MPSTM
GeneSiC_Semi
* End of GB50SLT12-247 SPICE Model
**************************************************************************
* This model is provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND
* EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED
* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE."
Feb 2018 Rev1.1
http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/
Page 1 of 1
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