MBR2X060A180_18 [GENESIC]
Schottky Rectifier Module;
| 型号： | MBR2X060A180_18 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Schottky Rectifier Module |
| 文件： | 总3页 (文件大小：651K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2X060A180
VRRM = 180 V
IF(AV) = 120 A
Schottky Rectifier
Module Type 120 A
Features
• High Surge Capability
• Type 180 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
SOT-227 Package
Maximum ratings
Parameter
Conditions
Symbol
Value
Unit
VRRM
VDC
VRMS
Tj
Maximum recurrent peak reverse voltage
Maximum DC blocking voltage
Maximum RMS Voltage
180
180
V
V
126
V
Operating temperature
-40 to 150
-40 to 150
°C
°C
Tstg
Storage temperature
Electrical characteristics at 25 °C, unless otherwise specified
Conditions
TC = 110 °C
Parameter
Symbol
IF(AV)
Value
120
Unit
A
Average forward current (per pkg)
IFSM
8.3 ms, half sine
IFM = 60 A, Tj = 25 °C
Peak forward surge current
(per leg)
800
A
0.92
0.82
3
V
V
Maximum instantaneous forward voltage*
(per leg)
VF
IFM = 60 A, Tj = 125 °C
mA
mA
mA
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
Maximum instantaneous reverse current at
rated DC blocking voltage (per leg)
IR
10
30
ViSO
A.C. 1 minute
Isolation voltage
2500
Thermal characteristics
Maximum thermal resistance junction to case
(per leg)
RΘjc
0.80
°C/W
* Pulse Test: Pulse width 300 µs, Duty < 2 %
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr2x060a180
MBR2X060A180
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr2x060a180
MBR2X060A180
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr2x060a180
相关型号：
©2020 ICPDF网 联系我们和版权申明