MBR300100CT [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBR300100CT |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 二极管 |
| 文件： | 总3页 (文件大小：724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR30045CT thru MBR300100CTR
VRRM = 45 V - 100 V
IF(AV) = 300 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBR30080CT(R) MBR300100CT(R)
Parameter
Symbol
MBR30045CT(R) MBR30060CT(R)
Unit
Repetitive peak reverse
voltage
VRRM
80
100
45
60
V
VRMS
VDC
Tj
57
70
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
32
42
V
V
80
100
45
60
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR30080CT(R) MBR300100CT(R)
Parameter
Symbol
MBR30045CT(R) MBR30060CT(R)
Unit
A
Average forward current
(per pkg)
TC = 125 °C
IF(AV)
300
2000
0.84
300
2000
0.84
300
300
Peak forward surge
current (per leg)
IFSM tp = 8.3 ms, half sine
2000
2000
A
Maximum forward
voltage (per leg)
VF IFM = 150 A, Tj = 25 °C
Tj = 25 °C
V
0.70
0.75
1
1
1
1
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 100 °C
Tj = 150 °C
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
0.40
0.40
0.40
0.40
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr30045ct.pdf
MBR30045CT thru MBR300100CTR
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr30045ct.pdf
MBR30045CT thru MBR300100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr30045ct.pdf
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