MBR30045CTL [GENESIC]
High Surge Capability;
| 型号： | MBR30045CTL |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | High Surge Capability 局域网 二极管 |
| 文件： | 总3页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR30045CT(R)L
VRRM = 45 V
IF(AV) = 300 A
Low VF Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 45 V VRRM
• Not ESD Sensitive
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Conditions
Parameter
MBR30045CT(R)L Unit
VRRM
VRMS
VDC
Tj
Maximum recurrent peak reverse voltage
Maximum RMS voltage
45
32
V
V
Maximum DC blocking voltage
Operating temperature
45
V
-55 to 150
-55 to 150
°C
°C
Tstg
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Parameter
MBR30045CT(R)L Unit
IF(AV)
IFSM
TC = 100 °C
Average forward current (per pkg)
Peak forward surge current (per leg)
300
A
A
tp = 8.3 ms, half sine
2000
Maximum instantaneous forward voltage (per
leg)
VF
I
FM = 150 A, Tj = 25 °C
V
0.60
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Tj = 25 °C
5
IR
mA
Tj = 100 °C
250
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
0.40
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBR30045CT(R)L
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBR30045CT(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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