MBR50080CT [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBR50080CT |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 局域网 二极管 |
| 文件： | 总3页 (文件大小：671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR50045CT thru MBR500100CTR
VRRM = 45 V - 100 V
IF(AV) = 500 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 to 100 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBR50080CT(R) MBR500100CT(R)
Parameter
Symbol
MBR50045CT(R) MBR50060CT(R)
Unit
Repetitive peak reverse
voltage
VRRM
80
100
45
60
V
VRMS
VDC
Tj
57
70
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
32
42
V
V
80
100
45
60
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR50080CT(R) MBR500100CT(R)
Parameter
Symbol
MBR50045CT(R) MBR50060CT(R)
Unit
A
Average forward current
(per pkg)
TC = 125 °C
IF(AV)
500
500
500
500
Peak forward surge
current (per leg)
IFSM tp = 8.3 ms, half sine
3500
3500
3500
3500
A
Maximum forward
voltage (per leg)
VF IFM = 250 A, Tj = 25 °C
Tj = 25 °C
0.84
0.84
V
0.75
0.78
1
1
1
1
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 100 °C
Tj = 150 °C
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
0.30
0.30
0.30
0.30
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr50045ct.pdf
MBR50045CT thru MBR500100CTR
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr50045ct.pdf
MBR50045CT thru MBR500100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr50045ct.pdf
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