MBR60040CT [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBR60040CT |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode |
| 文件： | 总3页 (文件大小：718K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR60020CT thru MBR60040CTR
VRRM = 20 V - 40 V
IF(AV) = 600 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBR60035CT(R) MBR60040CT(R)
Parameter
Symbol
MBR60020CT(R) MBR60030CT(R)
Unit
Repetitive peak reverse
voltage
VRRM
35
40
20
30
V
VRMS
VDC
Tj
25
28
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
14
21
V
V
35
40
20
30
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR60035CT(R) MBR60040CT(R)
Parameter
Symbol
MBR60020CT(R) MBR60030CT(R)
Unit
A
Average forward current
(per pkg)
TC = 125 °C
IF(AV)
600
600
600
600
Peak forward surge
current (per leg)
IFSM tp = 8.3 ms, half sine
4000
4000
4000
4000
A
Maximum forward
voltage (per leg)
VF IFM = 300 A, Tj = 25 °C
Tj = 25 °C
0.75
0.75
V
0.75
0.75
1
1
1
1
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 100 °C
Tj = 150 °C
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
0.28
0.28
0.28
0.28
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf
MBR60020CT thru MBR60040CTR
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf
MBR60020CT thru MBR60040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf
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