MBR60100R [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBR60100R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 二极管 |
| 文件： | 总3页 (文件大小：807K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR6045 thru MBR60100R
VRRM = 45 V - 100 V
IF = 60 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
DO-5 Package
• Not ESD Sensitive
C
A
C
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
A
Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBR6080 (R) MBR60100 (R)
Parameter
Symbol
MBR6045 (R) MBR6060 (R)
Unit
VRRM
VRMS
VDC
IF
80
50
80
60
100
70
Repetitive peak reverse voltage
RMS reverse voltage
45
32
45
60
60
42
60
60
V
V
V
A
100
60
DC blocking voltage
TC ≤ 100 °C
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
700
700
700
700
A
Tj
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Operating temperature
Storage temperature
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR6080 (R) MBR60100 (R)
Parameter
Symbol
MBR6045 (R) MBR6060(R)
Unit
V
VF
IR
IF = 60 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.84
5
0.84
5
Diode forward voltage
Reverse current
0.65
5
0.75
5
mA
150
150
150
150
Thermal characteristics
Thermal resistance, junction -
case
RthJC
1.0
1.0
1.0
1.0
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf
MBR6045 thru MBR60100R
2
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf
MBR6045 thru MBR60100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
C
E
F
A
C
A
A
C
Stud Stud
(R)
Inches
Millimeters
Min
Max
Min
Max
A
B
C
D
E
F
1/4 –28 UNF
0.669
-----
0.687
0.794
1.020
0.453
0.200
0.460
0.280
-----
17.19
-----
-----
10.72
2.93
-----
-----
6.00
-----
-----
3.56
17.44
20.16
25.91
11.50
5.08
-----
0.422
0.115
-----
G
J
11.68
7.00
-----
K
M
N
P
0.236
-----
-----
0.589
0.063
0.175
14.96
1.60
-----
0.140
4.45
3
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf
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