MBR80100R [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBR80100R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 二极管 |
| 文件： | 总3页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR8045 thru MBR80100R
VRRM = 45 V - 100 V
IF(AV) = 80 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
DO-5 Package
• Not ESD Sensitive
C
A
C
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
A
Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBR8080(R) MBR80100(R)
Parameter
Symbol
MBR8045(R) MBR8060(R)
Unit
VRRM
VRMS
VDC
Tj
80
50
100
70
Repetitive peak reverse voltage
RMS reverse voltage
45
32
60
42
V
V
80
100
DC blocking voltage
45
60
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Operating temperature
Storage temperature
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MBR8080(R) MBR80100(R)
Parameter
Symbol
IF(AV)
IFSM
MBR8045(R) MBR8060(R)
Unit
A
Average forward current (per
pkg)
TC = 125 °C
80
80
80
80
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 80 A, Tj = 25 °C
1000
0.75
1000
0.78
1000
0.84
1000
0.84
A
Maximum forward voltage
(per leg)
VF
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
1
1
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
10
20
10
20
mA
10
20
10
20
Thermal characteristics
Thermal resistance, junction-
case (per leg)
RΘJC
0.50
30
0.50
30
0.50
30
0.50
30
°C/W
Inch ponds
(in-pb)
Mounting torque
1
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf
MBR8045 thru MBR80100R
2
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf
MBR8045 thru MBR80100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
C
E
F
A
C
A
A
C
Stud Stud
(R)
Inches
Millimeters
Min
Max
Min
Max
A
B
C
D
E
F
1/4 –28 UNF
0.669
-----
0.687
0.794
1.020
0.453
0.200
0.460
0.280
-----
17.19
-----
-----
10.72
2.93
-----
-----
6.00
-----
-----
3.56
17.44
20.16
25.91
11.50
5.08
-----
0.422
0.115
-----
G
J
11.68
7.00
-----
K
M
N
P
0.236
-----
-----
0.589
0.063
0.175
14.96
1.60
-----
0.140
4.45
3
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/mbr8045.pdf
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