MBRF50045 [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBRF50045 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode |
| 文件： | 总3页 (文件大小：467K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF50045 thru MBRF500100R
VRRM = 45 V - 100 V
IF(AV) = 500 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
TO-244AB Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRF50080(R) MBRF500100(R)
Parameter
Symbol
MBRF50045(R) MBRF50060(R)
Unit
Repetitive peak reverse
voltage
VRRM
80
100
45
60
V
VRMS
VDC
Tj
57
70
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
32
42
V
V
80
100
45
60
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 125 °C
MBRF50080(R) MBRF500100(R)
Parameter
Symbol
IF(AV)
MBRF50045(R) MBRF50060(R)
Unit
A
Average forward current
(per pkg)
500
3500
0.84
500
3500
0.84
500
500
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3500
3500
A
Maximum forward voltage
(per leg)
VF
IR
I
FM = 250 A, Tj = 25 °C
V
0.75
0.78
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
1
1
Reverse current at rated DC
blocking voltage (per leg)
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance, junction-
case (per leg)
RΘJC
0.30
0.30
0.30
0.30
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRF50045 thru MBRF500100R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRF50045 thru MBRF500100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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